公开(公告)号：US10087524B2

公开(公告)日：2018-10-02

申请号：US14275835

申请日：2014-05-12

Applicant: Applied Materials, Inc.

Inventor： Robin L. Tiner ,  Soo Young Choi ,  Qunhua Wang ,  Jrjyan Jerry Chen

IPC: B05B1/00 ,  C23C16/455 ,  H01J37/32

Abstract: Embodiments of the present invention generally provide apparatus and methods for supporting a gas distribution showerhead in a processing chamber. In one embodiment, a gas distribution showerhead for a vacuum chamber is provided. The gas distribution showerhead comprises a body having a first side and a second side opposite the first side, and a plurality of gas passages formed through the body, the gas passages comprising a first bore formed in the first side that is fluidly coupled to a second bore formed in the second side by a restricting orifice, and a suspension feature formed in the first bore of at least one of the gas passages.

公开(公告)号：US09871124B2

公开(公告)日：2018-01-16

申请号：US15412519

申请日：2017-01-23

Applicant: Applied Materials, Inc.

Inventor： Jrjyan Jerry Chen ,  Soo Young Choi ,  Dong-Kil Yim ,  Yan Ye

IPC: H01L29/66 ,  H01L21/02 ,  H01L29/786

CPC classification number: H01L29/66969 ,  H01L21/02565 ,  H01L29/78606 ,  H01L29/7869

Abstract: The present invention generally relates to a method of manufacturing a TFT. The TFT has an active channel that comprises IGZO or zinc oxide. After the source and drain electrodes are formed, but before the passivation layers or etch stop layers are deposited thereover, the active channel is exposed to an N2O or O2 plasma. The interface between the active channel and the passivation layers or etch stop layers are either altered or damaged during formation of the source and drain electrodes. The N2O or O2 plasma alters and repairs the interface between the active channel and the passivation or etch stop layers.

公开(公告)号：US12041840B2

公开(公告)日：2024-07-16

申请号：US17313867

申请日：2021-05-06

Applicant: Applied Materials, Inc.

Inventor： Wen-Hao Wu ,  Jrjyan Jerry Chen

IPC: H10K71/00 ,  H10K50/844 ,  H10K85/40 ,  H10K102/00

CPC classification number: H10K71/00 ,  H10K50/8445 ,  H10K85/40 ,  H10K2102/351

Abstract: Embodiments of the present disclosure generally relate to methods for forming an organic light emitting diode (OLED) device. Forming the OLED device comprises depositing a first barrier layer on a substrate having an OLED structure disposed thereon. A first sublayer of a buffer layer is then deposited on the first barrier layer. The first sublayer of the buffer layer is cured with a mixed gas plasma. Curing the first sublayer comprises generating water from the mixed gas plasma in a process chamber in which the curing occurs. The deposition of the first sublayer and the curing of the first sublayer is repeated one or more times to form a completed buffer layer. A second barrier layer is then deposited on the completed buffer layer.

公开(公告)号：US11894396B2

公开(公告)日：2024-02-06

申请号：US17647404

申请日：2022-01-07

Applicant: Applied Materials, Inc.

Inventor： Xiangxin Rui ,  Lai Zhao ,  Jrjyan Jerry Chen ,  Soo Young Choi ,  Yujia Zhai

IPC: H01L27/12 ,  H01L29/24 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L27/1248 ,  H01L27/1225 ,  H01L27/1262 ,  H01L29/247 ,  H01L29/66969 ,  H01L29/78693

Abstract: Embodiments of the disclosure generally provide methods of forming a capacitor layer or a gate insulating layer with high dielectric constant as well as low film current leakage and desired film qualities for display applications. In one embodiment, a thin film transistor structure includes a dielectric layer formed on a substrate, wherein the dielectric layer is a zirconium containing material comprising aluminum, and gate, source and drain electrodes formed on the substrate, wherein the gate, source and drain electrodes formed above or below the dielectric layer.

公开(公告)号：US10158098B2

公开(公告)日：2018-12-18

申请号：US15843295

申请日：2017-12-15

Applicant: Applied Materials, Inc.

Inventor： Jrjyan Jerry Chen ,  Xiangxin Rui ,  Soo Young Choi

IPC: H01L51/52 ,  H01L21/67 ,  H01L21/677 ,  H01L21/687

Abstract: Embodiments described herein generally relate to a method and apparatus for encapsulating an OLED structure, more particularly, to a TFE structure for an OLED structure. The TFE structure includes at least one dielectric layer and at least two barrier layers, and the TFE structure is formed over the OLED structure. The at least one dielectric layer is deposited by atomic layer deposition (ALD). Having the at least one dielectric layer formed by ALD in the TFE structure improves the barrier performance of the TFE structure.

公开(公告)号：US09847511B2

公开(公告)日：2017-12-19

申请号：US15149785

申请日：2016-05-09

Applicant: Applied Materials, Inc.

Inventor： Jrjyan Jerry Chen ,  Xiangxin Rui ,  Soo Young Choi

IPC: H01L51/52 ,  H01L51/56 ,  H01L21/67 ,  H01L21/677 ,  H01L21/687

CPC classification number: H01L51/5256 ,  H01L21/67167 ,  H01L21/6719 ,  H01L21/67207 ,  H01L21/67742 ,  H01L21/68742 ,  H01L21/68785 ,  H01L21/68792

Abstract: Embodiments described herein generally relate to a method and apparatus for encapsulating an OLED structure, more particularly, to a TFE structure for an OLED structure. The TFE structure includes at least one dielectric layer and at least two barrier layers, and the TFE structure is formed over the OLED structure. The at least one dielectric layer is deposited by atomic layer deposition (ALD). Having the at least one dielectric layer formed by ALD in the TFE structure improves the barrier performance of the TFE structure.

公开(公告)号：US09530990B2

公开(公告)日：2016-12-27

申请号：US15236603

申请日：2016-08-15

Applicant: Applied Materials, Inc.

Inventor： Jrjyan Jerry Chen ,  Soo Young Choi

IPC: H01L21/00 ,  H01L51/56 ,  H01L51/52 ,  H01L51/00 ,  C09D183/04 ,  C23C16/50 ,  C23C16/40

CPC classification number: H01L51/56 ,  C09D183/04 ,  C23C16/401 ,  C23C16/50 ,  C23C16/56 ,  H01L51/0034 ,  H01L51/5256

Abstract: Methods for forming an OLED device are described. An encapsulation layer having a buffer layer sandwiched between barrier layers is deposited over an OLED structure. The buffer layer is deposited on the first barrier layer and is cured with a fluorine-containing plasma at a temperature less than 100 degrees Celsius. The second barrier layer is then deposited on the buffer layer.

Abstract translation: 描述用于形成OLED器件的方法。 具有夹在阻挡层之间的缓冲层的封装层沉积在OLED结构上。 缓冲层沉积在第一阻挡层上，并在低于100摄氏度的温度下用含氟等离子体固化。 然后将第二阻挡层沉积在缓冲层上。

公开(公告)号：US09431631B2

公开(公告)日：2016-08-30

申请号：US14179350

申请日：2014-02-12

Applicant: Applied Materials, Inc.

Inventor： Jrjyan Jerry Chen ,  Soo Young Choi

IPC: H01L21/00 ,  H01L51/52 ,  C23C16/40 ,  C23C16/56

CPC classification number: H01L51/56 ,  C09D183/04 ,  C23C16/401 ,  C23C16/50 ,  C23C16/56 ,  H01L51/0034 ,  H01L51/5256

Abstract: Methods for forming an OLED device are described. An encapsulation layer having a buffer layer sandwiched between barrier layers is deposited over an OLED structure. The buffer layer is deposited on the first barrier layer and is cured with a fluorine-containing plasma at a temperature less than 100 degrees Celsius. The second barrier layer is then deposited on the buffer layer.

公开(公告)号：US11967516B2

公开(公告)日：2024-04-23

申请号：US17423689

申请日：2020-01-17

Applicant: Applied Materials, Inc.

Inventor： Jrjyan Jerry Chen ,  Sanjay D. Yadav ,  Tae Kyung Won ,  Jun Li ,  Shouqian Shao ,  Surendra Kanimihally Setty

IPC: H01T23/00 ,  C23C16/04 ,  C23C16/458 ,  C23C16/50 ,  H01J37/32 ,  H01L21/683 ,  H01L21/687

CPC classification number: H01L21/6833 ,  C23C16/042 ,  C23C16/4586 ,  C23C16/50 ,  H01J37/32715 ,  H01L21/68757 ,  H01L21/68785 ,  H01J2237/2007 ,  H01J2237/3321

Abstract: Embodiments of the disclosure include methods and apparatus for electrostatically coupling a mask to a substrate support in a deposition chamber. In one embodiment, a substrate support is disclosed that includes a substrate receiving surface, a recessed portion disposed about a periphery of the substrate receiving surface, an electrostatic chuck disposed below the substrate receiving surface, and a plurality of compressible buttons disposed within a respective opening formed in the recessed portion that form an electrical circuit with the electrostatic chuck.

公开(公告)号：US20230097346A1

公开(公告)日：2023-03-30

申请号：US17490012

申请日：2021-09-30

Applicant: Applied Materials, Inc.

Inventor： Jiheng Zhao ,  Guangwei Sun ,  Jrjyan Jerry Chen ,  Jeffrey Kho

IPC: C23C16/455 ,  H01L21/67

Abstract: A flow guide apparatus includes an upper flow guide structure configured to receive a first gas from a remote source, and a lower flow guide structure attached to the upper flow guide structure. The upper flow guide structure and the lower flow guide structure are configured to receive at least one gas from at least one remote source. The flow guide apparatus further includes a line diffuser structure disposed between the lower flow guide structure and the upper flow guide structure. The line diffuser structure has a long axis along a length of the upper flow guide structure and a short axis. The line diffuser structure includes a plurality of through holes that are configured to approximately evenly distribute the at least one gas as it is output into a reactor.