公开(公告)号：US20250149337A1

公开(公告)日：2025-05-08

申请号：US18913143

申请日：2024-10-11

Applicant: Applied Materials, Inc.

Inventor： Jing ZHANG ,  Gene LEE ,  Kenji TAKESHITA ,  Anatoli CHLENOV

IPC: H01L21/033

Abstract: A method of selectively etching a hardmask layer formed on a device substrate. The method includes supplying an etching gas mixture to a process region of a processing chamber, where a device substrate is disposed in the process region when the etching gas mixture is supplied to the process region, where the device substrate may include a substrate, at least one cavity formed in the substrate, and a hardmask layer formed over the at least one cavity and over the substrate. The method also includes providing radio frequency (rf) power to the etching gas mixture to form a plasma in the process region.

公开(公告)号：US20240395561A1

公开(公告)日：2024-11-28

申请号：US18637181

申请日：2024-04-16

Applicant: Applied Materials, Inc.

Inventor： Han WANG ,  Chao LI ,  Yu YANG ,  Gene LEE

IPC: H01L21/311 ,  H01J37/32

Abstract: A method for patterning a boron-containing hard mask includes patterning an oxide hard mask formed on a boron-containing hard mask, and patterning the boron-containing hard mask using the patterned oxide hard mask, wherein the oxide hard mask comprises silicon oxide (SiO2), the boron-containing hard mask is doped with one or more metal elements, and the patterning of the boron-containing hard mask comprises etching the boron-containing hard mask through openings of the patterned oxide hard mask using an etching gas mixture comprising chlorine (Cl2), hydrogen bromide (HBr), and oxygen (O2).

公开(公告)号：US20240162057A1

公开(公告)日：2024-05-16

申请号：US18379048

申请日：2023-10-11

Applicant: Applied Materials, Inc.

Inventor： Chao LI ,  Gene LEE

IPC: H01L21/67 ,  H01L21/02

CPC classification number: H01L21/67069 ,  H01L21/02126 ,  H01L21/0234

Abstract: A method for spacer patterning includes performing a deposition process, the deposition process comprising conformally depositing an over layer over a spacer layer as deposited on top surfaces of a patterned mandrel layer and on sidewalls of the patterned mandrel layer, and performing an etch process using a fluorine containing etching gas. The etch process includes a post-deposition breakthrough process, removing portions of the over layer on the top surfaces of the patterned mandrel layer, and a main-etch process, removing shoulder portions of the over layer and shoulder portions of the spacer layer.

公开(公告)号：US20230093450A1

公开(公告)日：2023-03-23

申请号：US18072457

申请日：2022-11-30

Applicant: Applied Materials, Inc.

Inventor： Tzu-shun YANG ,  Rui CHENG ,  Karthik JANAKIRAMAN ,  Zubin HUANG ,  Diwakar KEDLAYA ,  Meenakshi GUPTA ,  Srinivas GUGGILLA ,  Yung-chen LIN ,  Hidetaka OSHIO ,  Chao LI ,  Gene LEE

IPC: H01L21/033 ,  H01L21/311 ,  H01L21/3213

Abstract: The present disclosure provides forming nanostructures utilizing multiple patterning process with good profile control and feature transfer integrity. In one embodiment, a method for forming features on a substrate includes forming a first mandrel layer on a material layer disposed on a substrate. A first spacer layer is conformally formed on sidewalls of the first mandrel layer, wherein the first spacer layer comprises a doped silicon material. The first mandrel layer is selectively removed while keeping the first spacer layer. A second spacer layer is conformally formed on sidewalls of the first spacer layer and selectively removing the first spacer layer while keeping the second spacer layer.

公开(公告)号：US20220189771A1

公开(公告)日：2022-06-16

申请号：US17157548

申请日：2021-01-25

Applicant: Applied Materials, Inc.

Inventor： Gene LEE ,  Gabriela ALVA

IPC: H01L21/033 ,  H01L21/311

Abstract: A structure includes an underlayer formed on a substrate, a mandrel layer formed on the underlayer, and a spacer layer formed on the mandrel layer. The underlayer includes a first material, and the spacer layer includes a second material. The first material is resistant to etching gases used in a first etch process to remove portions of the spacer layer and a second etch process to remove the mandrel layer.

公开(公告)号：US20220068661A1

公开(公告)日：2022-03-03

申请号：US17389119

申请日：2021-07-29

Applicant: Applied Materials, Inc.

Inventor： Jonathan SHAW ,  Priyadarshi PANDA ,  Nancy FUNG ,  Yongchang DONG ,  Somaye RASOULI ,  Gene LEE

IPC: H01L21/3213

Abstract: A method of patterning a substrate is provided. The method includes modifying a surface of a metal-containing layer formed over a substrate positioned in a processing region of a processing chamber by exposing the surface of the metal-containing layer to plasma effluents of a chlorine-containing gas precursor and an oxygen-containing gas precursor to form a modified surface of the metal-containing layer. The method further includes directing plasma effluents of an inert gas precursor towards the modified surface of the metal-containing layer. The plasma effluents of the inert gas precursor are directed by applying a bias voltage to a substrate support holding the substrate. The method further includes anisotropically etching the modified surface of the metal-containing layer with the plasma effluents of the inert gas precursor to form a first recess having a first sidewall in the metal-containing layer.

公开(公告)号：US20190221441A1

公开(公告)日：2019-07-18

申请号：US16245251

申请日：2019-01-10

Applicant: Applied Materials, Inc.

Inventor： Shan JIANG ,  Gene LEE ,  Akhil MEHROTRA ,  Zohreh HESABI

IPC: H01L21/311

CPC classification number: H01L21/31122 ,  H01L21/31144

Abstract: Methods for etching a hardmask layer to transfer features into a material layer using an etch process are provided. The methods described herein advantageously facilitate profile and dimension control of features through a proper sidewall and bottom management scheme during the hardmask open process. In one embodiment, a method for etching a hardmask layer to form features in the hardmask layer includes supplying an etching gas mixture onto a substrate to etch an exposed portion of a hardmask layer exposed by a patterned photoresist layer disposed on the substrate, switching the etching gas mixture to a deposition gas mixture comprising a silicon containing gas to form a passivation layer on sidewalls of the hardmask layer and forming openings in the hardmask layer.

公开(公告)号：US20180025914A1

公开(公告)日：2018-01-25

申请号：US15216948

申请日：2016-07-22

Applicant: Applied Materials, Inc.

Inventor： Hailong ZHOU ,  Gene LEE ,  Abhijit PATIL ,  Shan JIANG ,  Akhil MEHROTRA ,  Jonathan KIM

IPC: H01L21/311 ,  H01L21/02

CPC classification number: H01L21/31116 ,  H01L21/02167 ,  H01L21/02274 ,  H01L21/0276 ,  H01L21/31144

Abstract: Methods for etching a bottom anti-reflective coating (BARC) and/or an anti-reflective coating (ARC) and/or a dielectric anti-reflective coating (DARC) to form high aspect ratio features using an etch process are provided. The methods described herein advantageously facilitate profile and dimension control of features with high aspect ratios through a proper sidewall and bottom management scheme during the bottom anti-reflective coating (BARC) and/or an anti-reflective coating (ARC) and/or a dielectric anti-reflective coating (DARC) open process. In one embodiment, a method for etching a dielectric anti-reflective coating (DARC) layer to form features in the DARC layer includes supplying an etching gas mixture onto a DARC layer disposed on a substrate, wherein the substrate is disposed on a substrate support pedestal assembly disposed in a processing chamber, controlling a temperature of the substrate support pedestal assembly greater than 110 degrees Celsius, and etching the DARC layer disposed on the substrate.