公开(公告)号：US20220068661A1

公开(公告)日：2022-03-03

申请号：US17389119

申请日：2021-07-29

Applicant: Applied Materials, Inc.

Inventor： Jonathan SHAW ,  Priyadarshi PANDA ,  Nancy FUNG ,  Yongchang DONG ,  Somaye RASOULI ,  Gene LEE

IPC: H01L21/3213

Abstract: A method of patterning a substrate is provided. The method includes modifying a surface of a metal-containing layer formed over a substrate positioned in a processing region of a processing chamber by exposing the surface of the metal-containing layer to plasma effluents of a chlorine-containing gas precursor and an oxygen-containing gas precursor to form a modified surface of the metal-containing layer. The method further includes directing plasma effluents of an inert gas precursor towards the modified surface of the metal-containing layer. The plasma effluents of the inert gas precursor are directed by applying a bias voltage to a substrate support holding the substrate. The method further includes anisotropically etching the modified surface of the metal-containing layer with the plasma effluents of the inert gas precursor to form a first recess having a first sidewall in the metal-containing layer.

公开(公告)号：US20220285167A1

公开(公告)日：2022-09-08

申请号：US17592365

申请日：2022-02-03

Applicant: Applied Materials, Inc.

Inventor： Jonathan SHAW ,  Gene LEE

IPC: H01L21/311 ,  H01L21/768 ,  H01J37/32

Abstract: A method for selective barrier metal etching includes performing a hydrogen implantation process, in an inductively coupled plasma (ICP) etch chamber, to chemically reduce an oxidized portion of a barrier metal layer formed within a feature in a metal layer on the barrier metal layer, and performing an etch process, in the ICP etch chamber, to remove the hydrogen implanted portion of the barrier metal layer.