公开(公告)号：US20250149337A1

公开(公告)日：2025-05-08

申请号：US18913143

申请日：2024-10-11

Applicant: Applied Materials, Inc.

Inventor： Jing ZHANG ,  Gene LEE ,  Kenji TAKESHITA ,  Anatoli CHLENOV

IPC: H01L21/033

Abstract: A method of selectively etching a hardmask layer formed on a device substrate. The method includes supplying an etching gas mixture to a process region of a processing chamber, where a device substrate is disposed in the process region when the etching gas mixture is supplied to the process region, where the device substrate may include a substrate, at least one cavity formed in the substrate, and a hardmask layer formed over the at least one cavity and over the substrate. The method also includes providing radio frequency (rf) power to the etching gas mixture to form a plasma in the process region.