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公开(公告)号：US09478697B2
公开(公告)日：2016-10-25
申请号：US14538766
申请日：2014-11-11
Applicant: APPLIED MATERIALS, INC.
Inventor： Sriskantharajah Thirunavukarasu , Mingwei Zhu , Karthik Elumalai , Thean Ming Tan , Yong Cao , Daniel Lee Diehl , Nag Patibandla
CPC classification number: H01L33/0075 , H01L21/68771 , H01L33/0066 , H01L33/0079
Abstract: In some embodiments, a substrate carrier for holding a plurality of substrates comprises a disk formed of a continuous material to a nominal dimension which is approximately a multiple of a nominal dimension of a standard substrate size used in the manufacture of light emitting diode devices. In an embodiment, the disk is formed symmetrically about a central axis and defines a substantially planar upper surface. A first pair of pockets is defined in the upper surface of the disk, wherein the disk and each of the first pair of pockets are bisected by a first reference plane passing through the central axis. A second pair of pockets is defined in the upper surface of the disk, wherein the disk and each of the second pair of pockets are bisected by a second reference plane passing through the central axis.
Abstract translation: 在一些实施例中，用于保持多个基板的基板载体包括由连续材料形成的标称尺寸的盘，其大约是用于制造发光二极管器件的标准基板尺寸的标称尺寸的倍数。 在一个实施例中，盘围绕中心轴对称地形成，并且限定了基本平坦的上表面。 在盘的上表面中限定第一对凹穴，其中盘和第一对凹穴中的每一个由穿过中心轴线的第一参考平面对分。 在盘的上表面中限定第二对凹穴，其中盘和第二对凹穴中的每一个通过穿过中心轴线的第二参考平面对分。
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公开(公告)号：US11994800B2
公开(公告)日：2024-05-28
申请号：US18081499
申请日：2022-12-14
Applicant: Applied Materials, Inc.
Inventor： Tejinder Singh , Lifan Yan , Abhijit B. Mallick , Daniel Lee Diehl , Ho-yung Hwang , Jothilingam Ramalingam
IPC: G03F7/09 , G03F7/20 , H01L21/027 , H01L21/033 , H01L21/308
CPC classification number: G03F7/094 , H01L21/0274 , H01L21/0332 , H01L21/3081 , G03F7/20
Abstract: Embodiments of the present disclosure generally relate to a multilayer stack used as a mask in extreme ultraviolet (EUV) lithography and methods for forming a multilayer stack. In one embodiment, the method includes forming a carbon layer over a film stack, forming a metal rich oxide layer on the carbon layer by a physical vapor deposition (PVD) process, forming a metal oxide photoresist layer on the metal rich oxide layer, and patterning the metal oxide photoresist layer. The metal oxide photoresist layer is different from the metal rich oxide layer and is formed by a process different from the PVD process. The metal rich oxide layer formed by the PVD process improves adhesion of the metal oxide photoresist layer and increases the secondary electrons during EUV lithography, which leads to decreased EUV dose energies.
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公开(公告)号：US11739418B2
公开(公告)日：2023-08-29
申请号：US16823182
申请日：2020-03-18
Applicant: Applied Materials, Inc
Inventor： Mingwei Zhu , Zihao Yang , Nag B. Patibandla , Ludovic Godet , Yong Cao , Daniel Lee Diehl , Zhebo Chen
CPC classification number: C23C14/564 , C23C14/0641 , C23C14/34 , H01J37/3405 , H01J37/3441 , H01J37/3464 , H01J2237/24514
Abstract: A structure including a metal nitride layer is formed on a workpiece by pre-conditioning a chamber that includes a metal target by flowing nitrogen gas and an inert gas at a first flow rate ratio into the chamber and igniting a plasma in the chamber before placing the workpiece in the chamber, evacuating the chamber after the preconditioning, placing the workpiece on a workpiece support in the chamber after the preconditioning, and performing physical vapor deposition of a metal nitride layer on the workpiece in the chamber by flowing nitrogen gas and the inert gas at a second flow rate ratio into the chamber and igniting a plasma in the chamber. The second flow rate ratio is less than the first flow rate ratio.
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公开(公告)号：US11081623B2
公开(公告)日：2021-08-03
申请号：US16721301
申请日：2019-12-19
Applicant: Applied Materials, Inc.
Inventor： Mingwei Zhu , Nag B. Patibandla , Rongjun Wang , Daniel Lee Diehl , Vivek Agrawal , Anantha Subramani
Abstract: Oxygen controlled PVD AlN buffers for GaN-based optoelectronic and electronic devices is described. Methods of forming a PVD AlN buffer for GaN-based optoelectronic and electronic devices in an oxygen controlled manner are also described. In an example, a method of forming an aluminum nitride (AlN) buffer layer for GaN-based optoelectronic or electronic devices involves reactive sputtering an AlN layer above a substrate, the reactive sputtering involving reacting an aluminum-containing target housed in a physical vapor deposition (PVD) chamber with a nitrogen-containing gas or a plasma based on a nitrogen-containing gas. The method further involves incorporating oxygen into the AlN layer.
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公开(公告)号：US10886155B2
公开(公告)日：2021-01-05
申请号：US16249653
申请日：2019-01-16
Applicant: Applied Materials, Inc.
Inventor： Mingwei Zhu , Zihao Yang , Nag B. Patibandla , Daniel Lee Diehl , Yong Cao , Weimin Zeng , Renjing Zheng , Edward Budiarto , Surender Kumar Gurusamy , Todd Egan , Niranjan R. Khasgiwale
IPC: H01L21/67 , H01L21/687 , G01N21/21
Abstract: A method and apparatus for forming an optical stack having uniform and accurate layers is provided. A processing tool used to form the optical stack comprises, within an enclosed environment, a first transfer chamber, an on-board metrology unit, and a second transfer chamber. A first plurality of processing chambers is coupled to the first transfer chamber or the second transfer chamber. The on-board metrology unit is disposed between the first transfer chamber and the second transfer chamber. The on-board metrology unit is configured to measure one or more optical properties of the individual layers of the optical stack without exposing the layers to an ambient environment.
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Patent Agency Ranking
公开(公告)号：USD904640S1
公开(公告)日：2020-12-08
申请号：US29677482
申请日：2019-01-21
Applicant: APPLIED MATERIALS, INC.
Designer： Fred Eric Ruhland , Sumit S. Patankar , Vijay D. Parkhe , Daniel Lee Diehl , Mingwei Zhu , Hiroyuki Takahama , Randy D. Schmieding
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公开(公告)号：US10236412B2
公开(公告)日：2019-03-19
申请号：US15980583
申请日：2018-05-15
Applicant: Applied Materials, Inc.
Inventor： Mingwei Zhu , Nag B. Patibandla , Rongjun Wang , Daniel Lee Diehl , Vivek Agrawal , Anantha Subramani
Abstract: Oxygen controlled PVD AlN buffers for GaN-based optoelectronic and electronic devices is described. Methods of forming a PVD AlN buffer for GaN-based optoelectronic and electronic devices in an oxygen controlled manner are also described. In an example, a method of forming an aluminum nitride (AlN) buffer layer for GaN-based optoelectronic or electronic devices involves reactive sputtering an AlN layer above a substrate, the reactive sputtering involving reacting an aluminum-containing target housed in a physical vapor deposition (PVD) chamber with a nitrogen-containing gas or a plasma based on a nitrogen-containing gas. The method further involves incorporating oxygen into the AlN layer.
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公开(公告)号：US10193014B2
公开(公告)日：2019-01-29
申请号：US14884251
申请日：2015-10-15
Applicant: Applied Materials, Inc.
Inventor： Mingwei Zhu , Nag B. Patibandla , Rongjun Wang , Daniel Lee Diehl , Vivek Agrawal , Anantha Subramani
Abstract: Oxygen controlled PVD AlN buffers for GaN-based optoelectronic and electronic devices is described. Methods of forming a PVD AlN buffer for GaN-based optoelectronic and electronic devices in an oxygen controlled manner are also described. In an example, a method of forming an aluminum nitride (AlN) buffer layer for GaN-based optoelectronic or electronic devices involves reactive sputtering an AlN layer above a substrate, the reactive sputtering involving reacting an aluminum-containing target housed in a physical vapor deposition (PVD) chamber with a nitrogen-containing gas or a plasma based on a nitrogen-containing gas. The method further involves incorporating oxygen into the AlN layer.
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公开(公告)号：US20160133781A1
公开(公告)日：2016-05-12
申请号：US14538766
申请日：2014-11-11
Applicant: APPLIED MATERIALS, INC.
Inventor： SRISKANTHARAJAH THIRUNAVUKARASU , Mingwei Zhu , Karthik Elumalai , Thean Ming Tan , Yong Cao , Daniel Lee Diehl , Nag Patibandla
IPC: H01L33/00
CPC classification number: H01L33/0075 , H01L21/68771 , H01L33/0066 , H01L33/0079
Abstract: In some embodiments, a substrate carrier for holding a plurality of substrates comprises a disk formed of a continuous material to a nominal dimension which is approximately a multiple of a nominal dimension of a standard substrate size used in the manufacture of light emitting diode devices. In an embodiment, the disk is formed symmetrically about a central axis and defines a substantially planar upper surface. A first pair of pockets is defined in the upper surface of the disk, wherein the disk and each of the first pair of pockets are bisected by a first reference plane passing through the central axis. A second pair of pockets is defined in the upper surface of the disk, wherein the disk and each of the second pair of pockets are bisected by a second reference plane passing through the central axis.
Abstract translation: 在一些实施例中，用于保持多个基板的基板载体包括由连续材料形成的标称尺寸的盘，其大约是用于制造发光二极管器件的标准基板尺寸的标称尺寸的倍数。 在一个实施例中，盘围绕中心轴对称地形成，并且限定了基本平坦的上表面。 在盘的上表面中限定第一对凹穴，其中盘和第一对凹穴中的每一个由穿过中心轴线的第一参考平面对分。 在盘的上表面中限定第二对凹穴，其中盘和第二对凹穴中的每一个通过穿过中心轴线的第二参考平面对分。
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公开(公告)号：US11575071B2
公开(公告)日：2023-02-07
申请号：US17362794
申请日：2021-06-29
Applicant: Applied Materials, Inc.
Inventor： Mingwei Zhu , Nag B. Patibandla , Rongjun Wang , Daniel Lee Diehl , Vivek Agrawal , Anantha Subramani
Abstract: Oxygen controlled PVD AlN buffers for GaN-based optoelectronic and electronic devices is described. Methods of forming a PVD AlN buffer for GaN-based optoelectronic and electronic devices in an oxygen controlled manner are also described. In an example, a method of forming an aluminum nitride (AlN) buffer layer for GaN-based optoelectronic or electronic devices involves reactive sputtering an AlN layer above a substrate, the reactive sputtering involving reacting an aluminum-containing target housed in a physical vapor deposition (PVD) chamber with a nitrogen-containing gas or a plasma based on a nitrogen-containing gas. The method further involves incorporating oxygen into the AlN layer.
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