公开(公告)号：US20200176241A1

公开(公告)日：2020-06-04

申请号：US16676097

申请日：2019-11-06

Applicant: Applied Materials, Inc.

Inventor： Vinayak Veer Vats ,  Hang Yu ,  Philip Allan Kraus ,  Sanjay G. Kamath ,  William John Durand ,  Lakmal Charidu Kalutarage ,  Abhijit B. Mallick ,  Changling Li ,  Deenesh Padhi ,  Mark Joseph Saly ,  Thai Cheng Chua ,  Mihaela A. Balseanu

IPC: H01L21/02 ,  H01J37/32 ,  H01L21/311 ,  C23C16/34 ,  C23C16/56

Abstract: Embodiments disclosed herein include methods of forming high quality silicon nitride films. In an embodiment, a method of depositing a film on a substrate may comprise forming a silicon nitride film over a surface of the substrate in a first processing volume with a deposition process, and treating the silicon nitride film in a second processing volume, wherein treating the silicon nitride film comprises exposing the film to a plasma induced by a modular high-frequency plasma source. In an embodiment, a sheath potential of the plasma is less than 100 V, and a power density of the high-frequency plasma source is approximately 5 W/cm2 or greater, approximately 10 W/cm2 or greater, or approximately 20 W/cm2 or greater.

公开(公告)号：US11994800B2

公开(公告)日：2024-05-28

申请号：US18081499

申请日：2022-12-14

Applicant: Applied Materials, Inc.

Inventor： Tejinder Singh ,  Lifan Yan ,  Abhijit B. Mallick ,  Daniel Lee Diehl ,  Ho-yung Hwang ,  Jothilingam Ramalingam

IPC: G03F7/09 ,  G03F7/20 ,  H01L21/027 ,  H01L21/033 ,  H01L21/308

CPC classification number: G03F7/094 ,  H01L21/0274 ,  H01L21/0332 ,  H01L21/3081 ,  G03F7/20

Abstract: Embodiments of the present disclosure generally relate to a multilayer stack used as a mask in extreme ultraviolet (EUV) lithography and methods for forming a multilayer stack. In one embodiment, the method includes forming a carbon layer over a film stack, forming a metal rich oxide layer on the carbon layer by a physical vapor deposition (PVD) process, forming a metal oxide photoresist layer on the metal rich oxide layer, and patterning the metal oxide photoresist layer. The metal oxide photoresist layer is different from the metal rich oxide layer and is formed by a process different from the PVD process. The metal rich oxide layer formed by the PVD process improves adhesion of the metal oxide photoresist layer and increases the secondary electrons during EUV lithography, which leads to decreased EUV dose energies.

公开(公告)号：US11603591B2

公开(公告)日：2023-03-14

申请号：US16982955

申请日：2018-10-16

Applicant: Applied Materials, Inc.

Inventor： Eswaranand Venkatasubramanian ,  Yang Yang ,  Pramit Manna ,  Kartik Ramaswamy ,  Takehito Koshizawa ,  Abhijit B. Mallick

IPC: C23C16/26 ,  C23C16/503 ,  C23C16/455 ,  C23C16/458 ,  C23C16/505 ,  C23C16/52 ,  H01L21/02

Abstract: Methods for depositing an amorphous carbon layer onto a substrate, including over previously formed layers on the substrate, use a plasma-enhanced chemical vapor deposition (PECVD) process. In particular, the methods utilize a combination of RF AC power and pulsed DC power to create a plasma which deposits an amorphous carbon layer with a high ratio of sp3 (diamond-like) carbon to sp2 (graphite-like) carbon. The methods also provide for lower processing pressures, lower processing temperatures, and higher processing powers, each of which, alone or in combination, may further increase the relative fraction of sp3 carbon in the deposited amorphous carbon layer. As a result of the higher sp3 carbon fraction, the methods provide amorphous carbon layers having improved density, rigidity, etch selectivity, and film stress as compared to amorphous carbon layers deposited by conventional methods.

公开(公告)号：US11560626B2

公开(公告)日：2023-01-24

申请号：US16876845

申请日：2020-05-18

Applicant: Applied Materials, Inc.

Inventor： Timothy Joseph Franklin ,  Adam Fischbach ,  Edward Haywood ,  Abhijit B. Mallick ,  Pramit Manna ,  Carlaton Wong ,  Stephen C. Garner ,  Eswaranand Venkatasubramanian

IPC: C23C16/458 ,  H01J37/32 ,  C23C16/46 ,  C23C16/50 ,  C23C16/455 ,  H01L21/02 ,  H01L21/033

Abstract: Embodiments of the present disclosure generally relate to apparatus and methods utilized in the manufacture of semiconductor devices. More particularly, embodiments of the present disclosure relate to a substrate processing chamber, and components thereof, for forming semiconductor devices.

公开(公告)号：US11557466B2

公开(公告)日：2023-01-17

申请号：US16993759

申请日：2020-08-14

Applicant: Applied Materials, Inc.

Inventor： Samuel E. Gottheim ,  Abhijit B. Mallick ,  Pramit Manna ,  Eswaranand Venkatasubramanian ,  Timothy Joseph Franklin ,  Edward Haywood ,  Stephen C. Garner ,  Adam Fischbach

IPC: C23C16/509 ,  H01J37/32

Abstract: Embodiments described herein provide magnetic and electromagnetic housing systems and a method for controlling the properties of plasma generated in a process volume of a process chamber to affect deposition properties of a film. In one embodiment, the method includes rotation of the rotational magnetic housing about a center axis of the process volume to create dynamic magnetic fields. The magnetic fields modify the shape of the plasma, concentration of ions and radicals, and movement of concentration of ions and radicals to control the density profile of the plasma. Controlling the density profile of the plasma tunes the uniformity and properties of a deposited or etched film.

公开(公告)号：US11011371B2

公开(公告)日：2021-05-18

申请号：US16462513

申请日：2017-11-16

Applicant: Applied Materials, Inc.

Inventor： Milind Gadre ,  Shaunak Mukherjee ,  Praket P. Jha ,  Deenesh Padhi ,  Ziqing Duan ,  Abhijit B. Mallick

IPC: H01L21/02 ,  C23C16/34 ,  H01L21/768 ,  C23C16/38

Abstract: Embodiments disclosed herein relate to methods for forming memory devices, and more specifically to improved methods for forming a dielectric encapsulation layer over a memory material in a memory device. In one embodiment, the method includes thermally depositing a first material over a memory material at a temperature less than the temperature of the thermal budget of the memory material, exposing the first material to nitrogen plasma to incorporate nitrogen in the first material, and repeating the thermal deposition and nitrogen plasma operations to form a hermetic, conformal dielectric encapsulation layer over the memory material. Thus, a memory device having a hermetic, conformal dielectric encapsulation layer over the memory material is formed.