公开(公告)号：US20230296533A1

公开(公告)日：2023-09-21

申请号：US18200947

申请日：2023-05-23

Applicant: ASML Netherlands B.V.

Inventor： Nitish KUMAR ,  Richard Quintanilha ,  Markus Gerardus Martinus Maria Van Kraaij ,  Konstantin Tsigutkin ,  Willem Marie Julia Marcel Coene

IPC: G01N21/956 ,  G02F1/35 ,  G03F1/84

CPC classification number: G01N21/956 ,  G02F1/353 ,  G03F1/84 ,  G01N2021/95676 ,  G01N2201/06113

Abstract: A method of inspection for defects on a substrate, such as a reflective reticle substrate, and associated apparatuses. The method includes performing the inspection using inspection radiation obtained from a high harmonic generation source and having one or more wavelengths within a wavelength range of between 20 nm and 150 nm. Also, a method including performing a coarse inspection using first inspection radiation having one or more first wavelengths within a first wavelength range; and performing a fine inspection using second inspection radiation having one or more second wavelengths within a second wavelength range, the second wavelength range comprising wavelengths shorter than the first wavelength range.

公开(公告)号：US11442368B2

公开(公告)日：2022-09-13

申请号：US17051287

申请日：2019-04-05

Applicant: ASML NETHERLANDS B.V.

Inventor： Richard Quintanilha ,  Scott Anderson Middlebrooks ,  Adrianus Cornelis Matheus Koopman ,  Albertus Victor Gerardus Mangnus

IPC: G03F7/20 ,  G01B11/24 ,  G01B15/04

Abstract: A method of determining a measurement sequence for an inspection tool inspecting a structure generated by a lithographic process performed by a lithographic system is presented, the method including deriving a model for the lithographic process as performed by the lithographic system, the model including a relationship between a set of system variables describing the lithographic system and an output variable representing the structure resulting of the lithographic process, determining an observability of one or more system variables in the output variable, and determining the measurement sequence for the inspection tool, based on the observability.

公开(公告)号：US10976265B2

公开(公告)日：2021-04-13

申请号：US16039764

申请日：2018-07-19

Applicant: ASML Netherlands B.V.

Inventor： Sander Bas Roobol ,  Richard Quintanilha

IPC: G01N21/956 ,  G01N21/47 ,  G03F7/20 ,  G03F9/00 ,  G01N23/2055

Abstract: A detector for detecting diffracted radiation which has been diffracted by a regular structure; said detector comprises: a sensor for sensing at least a portion of said diffracted radiation, said sensor having a first region and a second region; a first coating configured to allow transmission of radiation with wavelengths within a first range of wavelengths; and a second coating configured to allow transmission of radiation with wavelengths within a second range of wavelengths; wherein said first coating coats said first region of said sensor, and said second coating coats said second region of said sensor, and wherein said first and second regions are different regions.

公开(公告)号：US10254644B2

公开(公告)日：2019-04-09

申请号：US15614551

申请日：2017-06-05

Applicant: ASML Netherlands B.V.

Inventor： Richard Quintanilha ,  Nitish Kumar

IPC: G03B27/54 ,  G03F7/00 ,  G03F7/20 ,  G01N21/956 ,  G03F9/00

Abstract: A metrology apparatus uses radiation (304) in an EUV waveband. A first detection system (333) includes a spectroscopic grating (312) and a detector (313) for capturing a spectrum of the EUV radiation after interaction with a target (T). Properties of the target are measured by analyzing the spectrum. The radiation (304) further includes radiation in other wavebands such as VUV, DUV, UV, visible and IR. A second detection system (352, 372, 382) is arranged to receive at least a portion of radiation (350) reflected by the first spectroscopic grating and to capture a spectrum (SA) in one or more of said other wavebands. The second waveband spectrum can be used to enhance accuracy of the measurement based on the EUV spectrum, and/or it can be used for a different measurement. Other types of detection, such as polarization can be used instead or in addition to spectroscopic gratings.

公开(公告)号：US10101671B2

公开(公告)日：2018-10-16

申请号：US15388601

申请日：2016-12-22

Applicant: ASML Netherlands B.V.

Inventor： Richard Quintanilha ,  Arie Jeffrey Den Boef

IPC: G03F7/20 ,  H05G2/00 ,  G01N21/956 ,  G01N21/88

Abstract: Hybrid metrology apparatus (1000, 1100, 1200, 1300, 1400) measures a structure (T) manufactured by lithography. An EUV metrology apparatus (244, IL1/DET1) irradiates the structure with EUV radiation and detects a first spectrum from the structure. Another metrology apparatus (240, IL2/DET2) irradiates the structure with second radiation comprising EUV radiation or longer-wavelength radiation and detects a second spectrum. Using the detected first spectrum and the detected second spectrum together, a processor (MPU) determines a property (CD/OV) of the structure. The spectra can be combined in various ways. For example, the first detected spectrum can be used to control one or more parameters of illumination and/or detection used to capture the second spectrum, or vice versa. The first spectrum can be used to distinguish properties of different layers (T1, T2) in the structure. First and second radiation sources (SRC1, SRC2) may share a common drive laser (LAS).

公开(公告)号：US10036962B2

公开(公告)日：2018-07-31

申请号：US15103629

申请日：2014-11-20

Applicant: ASML Netherlands B.V.

Inventor： Richard Quintanilha

IPC: G03B27/32 ,  G03F7/20 ,  G01B11/06 ,  G01B11/14

CPC classification number: G03F7/70516 ,  G01B11/06 ,  G01B11/14 ,  G03F7/70625

Abstract: A scatterometer is used to measure a property of structures on a substrate. A target grating comprises lines arranged periodically over an distance gp in a first direction, each line individually extending a distance gL in a second direction. The grating is illuminated with a spot of radiation and diffracted radiation is detected and used to calculate a measurement of CD, side wall angle and the like. The spot defines a field of view customized to the grating such that an extent fP of the spot in said first direction is greater than distance gp while an extent fL of the spot in said second direction is less than distance gL- The grating may be smaller than conventional gratings. The calculation can be simplified and made more robust, using a mathematical model that assumes that the grating is finite in the first direction but infinite in the second direction.

公开(公告)号：US10555407B2

公开(公告)日：2020-02-04

申请号：US16388519

申请日：2019-04-18

Applicant: ASML Netherlands B.V.

Inventor： Alexey Olegovich Polyakov ,  Richard Quintanilha ,  Vadim Yevgenyevich Banine ,  Coen Adrianus Verschuren

IPC: H05G2/00 ,  G03F7/20 ,  G03F1/84 ,  H01L21/66 ,  G21K1/06

Abstract: A target structure (T) made by lithography or used in lithography is inspected by irradiating the structure at least a first time with EUV radiation (304) generated by inverse Compton scattering. Radiation (308) scattered by the target structure in reflection or transmission is detected (312) and properties of the target structure are calculated by a processor (340) based on the detected scattered radiation. The radiation may have a first wavelength in the EUV range of 0.1 nm to 125 nm. Using the same source and controlling an electron energy, the structure may be irradiated multiple times with different wavelengths within the EUV range, and/or with shorter (x-ray) wavelengths and/or with longer (UV, visible) wavelengths. By rapid switching of electron energy in the inverse Compton scattering source, irradiation at different wavelengths can be performed several times per second.

公开(公告)号：US20190049393A1

公开(公告)日：2019-02-14

申请号：US16039764

申请日：2018-07-19

Applicant: ASML Netherlands B.V.

Inventor： Sander Bas ROOBOL ,  Richard Quintanilha

IPC: G01N21/956 ,  G01N21/47 ,  G03F7/20 ,  G03F9/00

Abstract: A detector for detecting diffracted radiation which has been diffracted by a regular structure; said detector comprises: a sensor for sensing at least a portion of said diffracted radiation, said sensor having a first region and a second region; a first coating configured to allow transmission of radiation with wavelengths within a first range of wavelengths; and a second coating configured to allow transmission of radiation with wavelengths within a second range of wavelengths; wherein said first coating coats said first region of said sensor, and said second coating coats said second region of said sensor, and wherein said first and second regions are different regions.

公开(公告)号：US20180364036A1

公开(公告)日：2018-12-20

申请号：US15988681

申请日：2018-05-24

Applicant: ASML Netherlands B.V.

Inventor： Martin Jacobus Johan JAK ,  Richard Quintanilha ,  Arie Jeffrey Den Boef ,  Michael Kubis

IPC: G01B11/30 ,  G01B15/08 ,  G03F7/20

Abstract: A method of determining an edge roughness parameter has the steps: (1010) controlling a radiation system to provide a spot of radiation at a measurement position for receiving a substrate; (1020) receiving a measurement signal from a sensor for measuring intensity of a forbidden diffraction order (such as a second order) being diffracted by a metrology target at the measurement position when the metrology target is illuminated by the spot of radiation, the metrology target comprising a repetitive pattern being configured by configuration of a linewidth/pitch ratio (of about 0.5) to control an amount of destructive interference that leads to forbidding of the diffraction order, the sensor being configured to provide the measurement signal based on the measured intensity; and (1040) determining an edge roughness parameter based on the measured intensity of the forbidden diffraction order.

公开(公告)号：US09904181B2

公开(公告)日：2018-02-27

申请号：US14901993

申请日：2014-06-13

Applicant: ASML Netherlands B.V.

Inventor： Richard Quintanilha

IPC: G03B27/54 ,  G03F7/20 ,  G01N21/956

CPC classification number: G03F7/70625 ,  G01N21/95623 ,  G01N2201/061 ,  G01N2201/08 ,  G01N2201/12 ,  G03F7/70633

Abstract: The present invention determines property of a target (30) on a substrate (W), such as a grating on a wafer. An inspection apparatus has an illumination source (702, 710) with two or more illumination beams (716, 716′, 716″, 716′″) in the pupil plane of a high numerical aperture objective lens (L3). The substrate and target are illuminated via the objective lens from different angles of incidence with respect to the plane of the substrate. In the case of four illumination beams, a quad wedge optical device (QW) is used to separately redirect diffraction orders of radiation scattered from the substrate and separates diffraction orders from the two or more illumination beams. For example four 0th diffraction orders are separated for four incident directions. After capture in multimode fibers (MF), spectrometers (S1-S4) are used to measure the intensity of the separately redirected 0th diffraction orders as a function of wavelength. This may then be used in determining a property of a target.