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公开(公告)号：US12298663B2
公开(公告)日：2025-05-13
申请号：US15770175
申请日：2016-10-11
Applicant: ASML NETHERLANDS B.V.
Inventor： Mária Péter , Erik Achilles Abegg , Adrianus Johannes Maria Giesbers , Johan Hendrik Klootwijk , Maxim Aleksandrovich Nasalevich , Wilhelmus Theodorus Anthonius Johannes Van Den Einden , Willem Joan Van Der Zande , Pieter-Jan Van Zwol , Johannes Petrus Martinus Bernardus Vermeulen , David Ferdinand Vles , Willem-Pieter Voorthuijzen
Abstract: Methods of manufacturing a pellicle for a lithographic apparatus including a method involving depositing at least one graphene layer on a planar surface of a substrate. The substrate has a first substrate portion and a second substrate portion. The method further includes removing the first substrate portion to form a freestanding membrane from the at least one graphene layer. The freestanding membrane is supported by the second substrate portion.
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公开(公告)号：US11762281B2
公开(公告)日：2023-09-19
申请号：US17130537
申请日：2020-12-22
Applicant: ASML NETHERLANDS B.V.
Inventor： Maxim Aleksandrovich Nasalevich , Erik Achilles Abegg , Nirupam Banerjee , Michiel Alexander Blauw , Derk Servatius Gertruda Brouns , Paul Janssen , Matthias Kruizinga , Egbert Lenderink , Nicolae Maxim , Andrey Nikipelov , Arnoud Willem Notenboom , Claudia Piliego , Mária Péter , Gijsbert Rispens , Nadja Schuh , Marcus Adrianus Van De Kerkhof , Willem Joan Van Der Zande , Pieter-Jan Van Zwol , Antonius Willem Verburg , Johannes Petrus Martinus Bernardus Vermeulen , David Ferdinand Vles , Willem-Pieter Voorthuijzen , Aleksandar Nikolov Zdravkov
CPC classification number: G03F1/62 , G02B5/208 , G02B5/283 , G03F1/82 , G03F7/70191 , G03F7/70575 , G03F7/70916 , G03F7/70958 , G03F7/70983
Abstract: Membranes for EUV lithography are disclosed. In one arrangement, a membrane has a stack having layers in the following order: a first capping layer including an oxide of a first metal; a base layer including a compound having a second metal and an additional element selected from the group consisting of Si, B, C and N; and a second capping layer including an oxide of a third metal, wherein the first metal is different from the second metal and the third metal is the same as or different from the first metal.
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公开(公告)号：US11320731B2
公开(公告)日：2022-05-03
申请号：US16060635
申请日：2016-12-02
Applicant: ASML NETHERLANDS B.V.
Inventor： Pieter-Jan Van Zwol , Dennis De Graaf , Paul Janssen , Mária Péter , Marcus Adrianus Van De Kerkhof , Willem Joan Van Der Zande , David Ferdinand Vles , Willem-Pieter Voorthuijzen
Abstract: A membrane for EUV lithography, the membrane having a thickness of no more than 200 nm and including a stack having: at least one silicon layer; and at least one silicon compound layer made of a compound of silicon and an element selected from the group consisting of boron, phosphorous, bromine.
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公开(公告)号：US11231646B2
公开(公告)日：2022-01-25
申请号：US16614815
申请日：2018-06-08
Applicant: ASML NETHERLANDS B.V.
Inventor： David Ferdinand Vles , Chaitanya Krishna Ande , Antonius Franciscus Johannes De Groot , Adrianus Johannes Maria Giesbers , Johannes Joseph Janssen , Paul Janssen , Johan Hendrik Klootwijk , Peter Simon Antonius Knapen , Evgenia Kurganova , Marcel Peter Meijer , Wouter Rogier Meijerink , Maxim Aleksandrovich Nasalevich , Arnoud Willem Notenboom , Raymond Olsman , Hrishikesh Patel , Mária Péter , Gerrit Van Den Bosch , Wilhelmus Theodorus Anthonius Johannes Van Den Einden , Willem Joan Van Der Zande , Pieter-Jan Van Zwol , Johannes Petrus Martinus Bernardus Vermeulen , Willem-Pieter Voorthuijzen , Hendrikus Jan Wondergem , Aleksandar Nikolov Zdravkov
IPC: G03F1/64
Abstract: A pellicle assembly is disclosed that has a pellicle frame defining a surface onto which a pellicle is to be attached. The pellicle assembly includes one or more three-dimensional expansion structures that allow the pellicle to expand under stress. There is also disclosed a pellicle assembly for a patterning device, the pellicle assembly including one or more actuators for moving the pellicle assembly towards and way from the patterning device.
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公开(公告)号：US10712656B2
公开(公告)日：2020-07-14
申请号：US15752302
申请日：2016-08-26
Applicant: ASML NETHERLANDS B.V.
Inventor： Zomer Silvester Houweling , Eric Willem Felix Casimiri , Tamara Druzhinina , Paul Janssen , Michael Alfred Josephus Kuijken , Martinus Hendrikus Antonius Leenders , Sicco Oosterhoff , Mária Péter , Willem Joan Van Der Zande , Pieter-Jan Van Zwol , Beatrijs Louise Marie-Joseph Katrien Verbrugge , Johannes Petrus Martinus Bernardus Vermeulen , David Ferdinand Vles , Willem-Pieter Voorthuijzen
Abstract: A method for manufacturing a membrane assembly for EUV lithography, the method comprising: providing a stack comprising a planar substrate and at least one membrane layer, wherein the planar substrate comprises an inner region and a border region around the inner region; positioning the stack on a support such that the inner region of the planar substrate is exposed; and selectively removing the inner region of the planar substrate using a non-liquid etchant, such that the membrane assembly comprises: a membrane formed from the at least one membrane layer; and a border holding the membrane, the border formed from the border region of the planar substrate.
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Patent Agency Ranking
16.发明授权公开(公告)号：US10698312B2
公开(公告)日：2020-06-30
申请号：US16247179
申请日：2019-01-14
Applicant: ASML Netherlands B.V.
Inventor： Pieter-Jan Van Zwol , Vadim Yevgenyevich Banine , Jozef Petrus Henricus Benschop , Florian Didier Albin Dhalluin , Mária Péter , Luigi Scaccabarozzi , Willem Joan Van Der Zande
Abstract: A membrane transmissive to EUV radiation, which may be used as a pellicle or spectral filter in a lithographic apparatus. The membrane has one or more high doped regions wherein the membrane is doped with a dopant concentration greater than 1017 cm−3, and one or more regions with low (or no) doping. The membrane may have a main substrate having low doping and one or more additional layers, wherein the high doped regions are within some or all of the additional layers.
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公开(公告)号：US11686997B2
公开(公告)日：2023-06-27
申请号：US17685988
申请日：2022-03-03
Applicant: ASML NETHERLANDS B.V.
Inventor： Pieter-Jan Van Zwol , Adrianus Johannes Maria Giesbers , Johan Hendrik Klootwijk , Evgenia Kurganova , Maxim Aleksandrovich Nasalevich , Arnoud Willem Notenboom , Mária Péter , Leonid Aizikovitsj Sjmaenok , Ties Wouter Van Der Woord , David Ferdinand Vles
IPC: G03F1/62
CPC classification number: G03F1/62
Abstract: A pellicle for a lithographic apparatus, the pellicle including nitridated metal silicide or nitridated silicon as well as a method of manufacturing the same. Also disclosed is the use of a nitridated metal silicide or nitridated silicon pellicle in a lithographic apparatus. Also disclosed is a pellicle for a lithographic apparatus including at least one compensating layer selected and configured to counteract changes in transmissivity of the pellicle upon exposure to EUV radiation as well as a method of controlling the transmissivity of a pellicle and a method of designing a pellicle.
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公开(公告)号：US11467486B2
公开(公告)日：2022-10-11
申请号：US16969211
申请日：2019-02-07
Applicant: ASML NETHERLANDS B.V.
Inventor： Evgenia Kurganova , Adrianus Johannes Maria Giesbers , Alexander Ludwig Klein , Maxim Aleksandrovich Nasalevich , Arnoud Willem Notenboom , Mária Péter , Pieter-Jan Van Zwol , David Ferdinand Vles , Sten Vollebregt , Willem-Pieter Voorthuijzen
Abstract: A catalyst including: a first layer including a transition metal; a base layer; and an interlayer, wherein the interlayer is disposed between the base layer and the first layer is disclosed. Also disclosed are methods for preparing a catalyst as well as for synthesizing graphene, a pellicle produced using the catalyst or methods disclosed herein, as well as a lithography apparatus including such a pellicle.
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公开(公告)号：US20220187701A1
公开(公告)日：2022-06-16
申请号：US17685988
申请日：2022-03-03
Applicant: ASML NETHERLANDS B.V.
Inventor： Pieter-Jan VAN ZWOL , Adrianus Johannes Maria Giesbers , Johan Hendrik Klootwijk , Evgenia Kurganova , Maxim Aleksandrovich Nasalevich , Arnoud Willem Notenboom , Mária Péter , Leonid Aizikovitsj Sjmaenok , Ties Wouter Van Der Woord , David Ferdinand Vles
IPC: G03F1/62
Abstract: A pellicle for a lithographic apparatus, the pellicle including nitridated metal silicide or nitridated silicon as well as a method of manufacturing the same. Also disclosed is the use of a nitridated metal silicide or nitridated silicon pellicle in a lithographic apparatus. Also disclosed is a pellicle for a lithographic apparatus including at least one compensating layer selected and configured to counteract changes in transmissivity of the pellicle upon exposure to EUV radiation as well as a method of controlling the transmissivity of a pellicle and a method of designing a pellicle.
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公开(公告)号：US11347142B2
公开(公告)日：2022-05-31
申请号：US17206649
申请日：2021-03-19
Applicant: ASML NETHERLANDS B.V. , ASML HOLDING N.V.
Inventor： David Ferdinand Vles , Erik Achilles Abegg , Aage Bendiksen , Derk Servatius Gertruda Brouns , Pradeep K. Govil , Paul Janssen , Maxim Aleksandrovich Nasalevich , Arnoud Willem Notenboom , Mária Péter , Marcus Adrianus Van De Kerkhof , Willem Joan Van Der Zande , Pieter-Jan Van Zwol , Johannes Petrus Martinus Bernardus Vermeulen , Willem-Pieter Voorthuijzen , James Norman Wiley
Abstract: A pellicle suitable for use with a patterning device for a lithographic apparatus. The pellicle comprising at least one breakage region which is configured to preferentially break, during normal use in a lithographic apparatus, prior to breakage of remaining regions of the pellicle. At least one breakage region comprises a region of the pellicle which has a reduced thickness when compared to surrounding regions of the pellicle.
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