公开(公告)号：US09285685B2

公开(公告)日：2016-03-15

申请号：US14261208

申请日：2014-04-24

Applicant: ASML NETHERLANDS B.V. ,  CARL ZEISS SMT GmbH

Inventor： Bob Streefkerk ,  Johannes Jacobus Matheus Baselmans ,  Adrianus Franciscus Petrus Engelen ,  Jozef Maria Finders ,  Paul Gräupner ,  Johannes Catharinus Hubertus Mulkens ,  Jan Bernard Plechelmus Van Schoot

IPC: G03B27/52 ,  G03B27/42 ,  G03F7/20

CPC classification number: G03F7/70341 ,  G03F7/70333

Abstract: In an immersion lithography apparatus or device manufacturing method, the position of focus of the projected image is changed during imaging to increase focus latitude. In an embodiment, the focus may be varied using the liquid supply system of the immersion lithographic apparatus.

Abstract translation: 在浸没光刻设备或设备制造方法中，在成像期间投影图像的焦点位置改变以增加焦点宽度。 在一个实施例中，焦点可以使用浸没式光刻设备的液体供应系统来改变。

公开(公告)号：US20150205197A1

公开(公告)日：2015-07-23

申请号：US14419212

申请日：2013-07-26

Applicant: ASML NETHERLANDS B.V.

Inventor： Jozef Maria Finders ,  Tamara Druzhinina ,  Emiel Peeters ,  Sander Frederik Wuister ,  Christianus Martinus Van Heesch ,  Eddy Cornelis Antonius Van Der Heijden ,  Henri Marie Joseph Boots

IPC: G03F7/00 ,  G06F17/50

Abstract: A method of designing an epitaxy template to direct self-assembly of a block copolymer on a substrate into an ordered target pattern involves providing a primary epitaxy template design and then varying the design to optimize a pattern fidelity statistic, such as placement error, relative to the target pattern by modelling predicted self-assembled block copolymer patterns and optimizing pattern placement as a function of a varied design parameter. In addition to varying a design parameter to optimize the pattern fidelity statistic, a random error in the template design is included prior to modelling predicted patterns in order to compensate for expected template inaccuracy in practice. The inclusion of a realistic random error in the template design, in addition to systematic variation of a design parameter, may improve the template design optimization to render the result less sensitive to error which may be inevitable in practice.

Abstract translation: 设计外延模板以将基底上的嵌段共聚物自组装成有序目标图案的方法包括提供初级外延模板设计，然后改变设计以优化图案保真度统计，例如放置误差，相对于 通过对预测的自组装嵌段共聚物图案进行模拟和优化作为不同设计参数的函数的图案放置来实现目标图案。 除了改变设计参数以优化模式保真度统计量之外，在模拟预测模式之前还包括模板设计中的随机误差，以便在实践中补偿预期的模板不准确性。 除了设计参数的系统变化之外，在模板设计中包括一个现实的随机误差，可以改进模板设计优化，使得结果对于在实践中可能是不可避免的误差较不敏感。

公开(公告)号：US20150050599A1

公开(公告)日：2015-02-19

申请号：US14387186

申请日：2013-03-19

Applicant: ASML Netherlands B.V.

Inventor： Sander Frederik Wuister ,  Vadim Yevgenyevich Banine ,  Jozef Maria Finders ,  Roelof Koole ,  Emiel Peeters ,  Harmeet Singh

IPC: G03F7/26 ,  B05D1/32 ,  B05D3/10 ,  G03F7/20

CPC classification number: G03F7/26 ,  B05D1/32 ,  B05D3/107 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  G03F7/20 ,  G03F7/2022

Abstract: A method is disclosed to form a patterned epitaxy template, on a substrate, to direct self-assembly of block copolymer for device lithography. A resist layer on a substrate is selectively exposed with actinic (e.g. UV or DUV) radiation by photolithography to provide exposed portions in a regular lattice pattern of touching or overlapping shapes arranged to leave unexposed resist portions between the shapes. Exposed or unexposed resist is removed with remaining resist portions providing the basis for a patterned epitaxy template for the orientation of the self-assemblable block copolymer as a hexagonal or square array. The method allows for simple, direct UV lithography to form patterned epitaxy templates with sub-resolution features.

Abstract translation: 公开了一种在衬底上形成图案化外延模板以引导用于器件光刻的嵌段共聚物的自组装的方法。 基板上的抗蚀剂层通过光刻法选择性地用光化（例如UV或DUV）曝光，以提供布置成在形状之间留下未曝光的抗蚀剂部分的接触或重叠形状的规则格子图案的暴露部分。 用剩余的抗蚀剂部分除去曝光或未曝光的抗蚀剂，为用于可自组装嵌段共聚物取向的图案化外延模板提供六边形或正方形阵列的基础。 该方法允许简单的直接UV光刻形成具有亚分辨率特征的图案化外延模板。

公开(公告)号：US10732498B2

公开(公告)日：2020-08-04

申请号：US16502674

申请日：2019-07-03

Applicant: ASML Netherlands B.V.

Inventor： Pieter Cristiaan De Groot ,  Gerard Frans Jozef Schasfoort ,  Maksym Yuriiovych Sladkov ,  Manfred Petrus Johannes Maria Dikkers ,  Jozef Maria Finders ,  Pieter-Jan Van Zwol ,  Johannes Jacobus Matheus Baselmans ,  Stefan Michael Bruno Baumer ,  Laurentius Cornelius De Winter ,  Wouter Joep Engelen ,  Marcus Adrianus Van De Kerkhof ,  Robbert Jan Voogd

IPC: G03F1/24 ,  G03F1/42 ,  G03F1/44 ,  G02B5/02 ,  G03F7/20 ,  G03F9/00 ,  G02B5/22 ,  G02B5/18

Abstract: A patterning device comprising a reflective marker, wherein the marker comprises: a plurality of reflective regions configured to preferentially reflect radiation having a given wavelength; and a plurality of absorbing regions configured to preferentially absorb radiation having the given wavelength; wherein the absorbing and reflective regions are arranged to form a patterned radiation beam reflected from the marker when illuminated with radiation, and wherein the reflective regions comprise a roughened reflective surface, the roughened reflective surface being configured to diffuse radiation reflected from the reflective regions, and wherein the roughened reflective surface has a root mean squared roughness of about an eighth of the given wavelength or more.

公开(公告)号：US10240250B2

公开(公告)日：2019-03-26

申请号：US14345891

申请日：2012-10-02

Applicant: ASML Netherlands B.V.

Inventor： Thanh Trung Nguyen ,  Jozef Maria Finders ,  Wilhelmus Sebastianus Marcus Maria Ketelaars ,  Sander Frederik Wuister ,  Eddy Cornelis Antonius Van der Heijden ,  Hieronymus Johannus Christiaan Meessen ,  Roelof Koole ,  Emiel Peeters ,  Christianus Martinus Van Heesch ,  Aurelie Marie Andree Brizard ,  Henri Marie Joseph Boots ,  Tamara Druzhinina ,  Jessica Margaretha De Ruiter

IPC: C30B1/12 ,  B81C1/00 ,  G03F7/00 ,  B82Y30/00 ,  H01L21/033

Abstract: A graphoepitaxy template to align a self-assembled block polymer adapted to self-assemble into a 2-D array having parallel rows of discontinuous first domains extending parallel to a first axis, mutually spaced along an orthogonal second axis, and separated by a continuous second domain. The graphoepitaxy template has first and second substantially parallel side walls extending parallel to and defining the first axis and mutually spaced along the second axis to provide a compartment to hold at least one row of discontinuous first domains of the self-assembled block copolymer on the substrate between and parallel to the side walls, and separated therefrom by a continuous second domain. The compartment has a graphoepitaxial nucleation feature arranged to locate at least one of the discontinuous first domains at a specific position within the compartment. Methods for forming the graphoepitaxy template and its use for device lithography are also disclosed.

公开(公告)号：US09811002B2

公开(公告)日：2017-11-07

申请号：US14904395

申请日：2014-07-01

Applicant: ASML Netherlands B.V.

Inventor： Jozef Maria Finders

IPC: G03B27/32 ,  G03C5/00 ,  G03F7/20

CPC classification number: G03F7/70558 ,  G03F7/705 ,  G03F7/70625

Abstract: A method of lithography in a lithographic apparatus configured to transfer a pattern from a patterning device onto a substrate, the method including: determining a dose sensitivity of at least part of the pattern at a plurality of values of a dose, wherein the dose sensitivity is not a monotonically increasing or monotonically decreasing function of the dose. A computer product including a processor, a memory and a storage device, wherein the storage device at least stores values of, or a function describing, a dose sensitivity of at least part of a lithographic pattern at a plurality of values of dose, wherein the dose sensitivity is not a monotonically increasing or monotonically decreasing function of the dose.

公开(公告)号：US09513553B2

公开(公告)日：2016-12-06

申请号：US14387186

申请日：2013-03-19

Applicant: ASML Netherlands B.V.

Inventor： Sander Frederik Wuister ,  Vadim Yevgenyevich Banine ,  Jozef Maria Finders ,  Roelof Koole ,  Emiel Peeters ,  Harmeet Singh

IPC: G03F7/20 ,  G03F7/26 ,  G03F7/00 ,  B82Y10/00 ,  B82Y40/00 ,  B05D1/32 ,  B05D3/10

CPC classification number: G03F7/26 ,  B05D1/32 ,  B05D3/107 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  G03F7/20 ,  G03F7/2022

Abstract: A method is disclosed to form a patterned epitaxy template, on a substrate, to direct self-assembly of block copolymer for device lithography. A resist layer on a substrate is selectively exposed with actinic (e.g. UV or DUV) radiation by photolithography to provide exposed portions in a regular lattice pattern of touching or overlapping shapes arranged to leave unexposed resist portions between the shapes. Exposed or unexposed resist is removed with remaining resist portions providing the basis for a patterned epitaxy template for the orientation of the self-assemblable block copolymer as a hexagonal or square array. The method allows for simple, direct UV lithography to form patterned epitaxy templates with sub-resolution features.

Abstract translation: 公开了一种在衬底上形成图案化外延模板以引导用于器件光刻的嵌段共聚物的自组装的方法。 基板上的抗蚀剂层通过光刻法选择性地用光化（例如UV或DUV）曝光，以提供布置成在形状之间留下未曝光的抗蚀剂部分的接触或重叠形状的规则格子图案的暴露部分。 用剩余的抗蚀剂部分除去曝光或未曝光的抗蚀剂，为用于可自组装嵌段共聚物取向的图案化外延模板提供六边形或正方形阵列的基础。 该方法允许简单的直接UV光刻形成具有亚分辨率特征的图案化外延模板。