公开(公告)号：US20210351069A1

公开(公告)日：2021-11-11

申请号：US16871751

申请日：2020-05-11

Applicant: Applied Materials, Inc.

Inventor： Morgan Evans ,  Joseph C. Olson ,  Rutger Meyer Timmerman Thijssen ,  Daniel Distaso ,  Ryan Boas

IPC: H01L21/768 ,  G03F7/20

Abstract: Methods of producing grating materials with variable height fins are provided. In one example, a method may include providing a mask layer atop a substrate, the mask layer including a first opening over a first processing area and a second opening over a second processing area. The method may further include etching the substrate to recess the first and second processing areas, forming a grating material over the substrate, and etching the grating material in the first and second processing areas to form a plurality of structures oriented at a non-zero angle with respect to a vertical extending from a top surface of the substrate.

公开(公告)号：US20210210308A1

公开(公告)日：2021-07-08

申请号：US17212307

申请日：2021-03-25

Applicant: APPLIED Materials, Inc.

Inventor： Morgan Evans ,  Charles T. Carlson ,  Rutger Meyer Timmerman Thijssen ,  Ross Bandy ,  Ryan Magee

IPC: H01J37/305 ,  G02B5/18 ,  H01L21/3065 ,  H01L21/308 ,  B81C1/00

Abstract: A carrier proximity mask and methods of assembling and using the carrier proximity mask may include providing a first carrier body, second carrier body, and set of one or more clamps. The first carrier body may have one or more openings formed as proximity masks to form structures on a first side of a substrate. The first and second carrier bodies may have one or more contact areas to align with one or more contact areas on a first and second sides of the substrate. The set of one or more clamps may clamp the substrate between the first carrier body and the second carrier body at contact areas to suspend work areas of the substrate between the first and second carrier bodies. The openings to define edges to convolve beams to form structures on the substrate.

公开(公告)号：US10957512B1

公开(公告)日：2021-03-23

申请号：US16582249

申请日：2019-09-25

Applicant: APPLIED Materials, Inc.

Inventor： Morgan Evans ,  Charles T. Carlson ,  Rutger Meyer Timmerman Thijssen ,  Ross Bandy

IPC: H01J37/09 ,  H01J37/305

Abstract: A carrier proximity mask and methods of assembling and using the carrier proximity mask may include providing a first carrier body, second carrier body, and set of one or more clamps. The first carrier body may have one or more openings formed as proximity masks to form structures on a first side of a substrate. The first and second carrier bodies may have one or more contact areas to align with one or more contact areas on a first and second sides of the substrate. The set of one or more clamps may clamp the substrate between the first carrier body and the second carrier body at contact areas to suspend work areas of the substrate between the first and second carrier bodies. The openings to define edges to convolve beams to form structures on the substrate.

公开(公告)号：US10930735B2

公开(公告)日：2021-02-23

申请号：US16793683

申请日：2020-02-18

Applicant: APPLIED Materials, Inc.

Inventor： Min Gyu Sung ,  Sony Varghese ,  Anthony Renau ,  Morgan Evans ,  Joseph C. Olson

IPC: H01L29/06 ,  H01L29/78 ,  H01L29/66 ,  H01L21/8238 ,  H01L21/3065 ,  H01L27/092 ,  H01L21/8234 ,  H01L29/423

Abstract: A method of forming a three-dimensional transistor device. The method may include providing a fin array on a substrate, the fin array comprising a plurality of fin structures, formed from a monocrystalline semiconductor, and disposed subjacent to a hard mask layer. The method may include directing angled ions at the fin array, wherein the angled ions form a non-zero angle of incidence with respect to a perpendicular to a plane of the substrate. The angled ions may etch the plurality of fin structures to form a stack of isolated nanowires, within a given fin structure.

公开(公告)号：US20200185201A1

公开(公告)日：2020-06-11

申请号：US16682888

申请日：2019-11-13

Applicant: APPLIED Materials, Inc.

Inventor： Peter F. Kurunczi ,  Morgan Evans ,  Joseph C. Olson

IPC: H01J37/32 ,  G02B5/18

Abstract: A plasma source may include a plasma chamber, where the plasma chamber has a first side, defining a first plane and an extraction assembly, disposed adjacent to the side of the plasma chamber, where the extraction assembly includes at least two electrodes. A first electrode may be disposed immediately adjacent the side of the plasma chamber, wherein a second electrode defines a vertical displacement from the first electrode along a first direction, perpendicular to the first plane, wherein the first electrode comprises a first aperture, and the second electrode comprises a second aperture. The first aperture may define a lateral displacement from the second aperture along a second direction, parallel to the first plane, wherein the vertical displacement and the lateral displacement define a non-zero angle of inclination with respect to a perpendicular to the first plane.

公开(公告)号：US12130465B2

公开(公告)日：2024-10-29

申请号：US17948062

申请日：2022-09-19

Applicant: Applied Materials, Inc.

Inventor： Morgan Evans ,  Rutger Meyer Timmerman Thijssen

IPC: G02B5/18 ,  F21V8/00 ,  G02B27/01

CPC classification number: G02B6/0045 ,  G02B5/1828 ,  G02B5/1857 ,  G02B6/0016 ,  G02B6/0033 ,  G02B6/0065 ,  G02B27/0172

Abstract: An apparatus with a grating structure and a method for forming the same are disclosed. The grating structure includes forming a recess in a grating layer. A plurality of channels is formed in the grating layer to define slanted grating structures therein. The recess and the slanted grating structures are formed using a selective etch process.

公开(公告)号：US12106935B2

公开(公告)日：2024-10-01

申请号：US18139184

申请日：2023-04-25

Applicant: Applied Materials, Inc.

Inventor： Joseph C. Olson ,  Morgan Evans ,  Rutger Meyer Timmerman Thijssen

IPC: H01J37/305 ,  G02B6/136 ,  H01J37/12 ,  H01J37/147 ,  H01J37/20 ,  G02B6/12

CPC classification number: H01J37/3053 ,  G02B6/136 ,  H01J37/12 ,  H01J37/1478 ,  H01J37/20 ,  H01J37/3056 ,  G02B2006/12107 ,  H01J2237/1507 ,  H01J2237/3174

Abstract: Embodiments described herein relate to methods and apparatus for forming gratings having a plurality of fins with different slant angles on a substrate and forming fins with different slant angles on successive substrates using angled etch systems and/or an optical device. The methods include positioning portions of substrates retained on a platen in a path of an ion beam. The substrates have a grating material disposed thereon. The ion beam is configured to contact the grating material at an ion beam angle ϑ relative to a surface normal of the substrates and form gratings in the grating material.

公开(公告)号：US11967489B2

公开(公告)日：2024-04-23

申请号：US17514657

申请日：2021-10-29

Applicant: APPLIED Materials, Inc.

Inventor： Peter F. Kurunczi ,  Morgan Evans ,  Joseph C. Olson

IPC: H01J37/32 ,  G02B5/18 ,  H01J37/147

CPC classification number: H01J37/32568 ,  G02B5/1857 ,  H01J37/147 ,  H01J37/32541 ,  H01J2237/3341

Abstract: A plasma source may include a plasma chamber, where the plasma chamber has a first side, defining a first plane and an extraction assembly, disposed adjacent to the side of the plasma chamber, where the extraction assembly includes at least two electrodes. A first electrode may be disposed immediately adjacent the side of the plasma chamber, wherein a second electrode defines a vertical displacement from the first electrode along a first direction, perpendicular to the first plane, wherein the first electrode comprises a first aperture, and the second electrode comprises a second aperture. The first aperture may define a lateral displacement from the second aperture along a second direction, parallel to the first plane, wherein the vertical displacement and the lateral displacement define a non-zero angle of inclination with respect to a perpendicular to the first plane.

公开(公告)号：US11367589B2

公开(公告)日：2022-06-21

申请号：US16705159

申请日：2019-12-05

Applicant: Applied Materials, Inc.

Inventor： Joseph C. Olson ,  Morgan Evans ,  Rutger Meyer Timmerman Thijssen

IPC: H01J37/12 ,  H01J37/305 ,  G02B6/136 ,  H01J37/147 ,  H01J37/20 ,  G02B6/12

Abstract: Embodiments described herein relate to methods and apparatus for forming gratings having a plurality of fins with different slant angles on a substrate and forming fins with different slant angles on successive substrates using angled etch systems and/or an optical device. The methods include positioning portions of substrates retained on a platen in a path of an ion beam. The substrates have a grating material disposed thereon. The ion beam is configured to contact the grating material at an ion beam angle ϑ relative to a surface normal of the substrates and form gratings in the grating material.

公开(公告)号：US11335531B2

公开(公告)日：2022-05-17

申请号：US16789591

申请日：2020-02-13

Applicant: Applied Materials, Inc.

Inventor： Joseph C. Olson ,  Morgan Evans ,  Thomas Soldi ,  Rutger Meyer Timmerman Thijssen ,  Maurice Emerson Peploski

IPC: H01J37/08 ,  H01J29/07 ,  H01J37/20 ,  H01J37/305

Abstract: Methods of producing grating materials with variable height are provided. In one example, a method may include providing a grating material atop a substrate, and positioning a shadow mask between the grating material and an ion source, wherein the shadow mask is separated from the grating material by a distance. The method may further include etching the grating material using an ion beam passing through a set of openings of the shadow mask, wherein a first depth of a first portion of the grating material is different than a second depth of a second portion of the grating material.