公开(公告)号：US20200161156A1

公开(公告)日：2020-05-21

申请号：US16198569

申请日：2018-11-21

Applicant: APPLIED MATERIALS, INC.

Inventor： Jingyu QIAO ,  Qiwei LIANG ,  Viachslav BABAYAN ,  Seshadri RAMASWAMI ,  Srinivas D. NEMANI

IPC: H01L21/683 ,  C23C16/40 ,  C23C16/56

Abstract: Embodiments disclosed herein may include an electrostatic chuck (ESC) carrier. In an embodiment, the ESC carrier may comprise a carrier substrate having a first surface and a second surface opposite the first surface. In an embodiment, a first through substrate opening and a second through substrate opening may pass through the carrier substrate from the first surface to the second surface. Embodiments may include a first conductor in the first through substrate opening, and a second conductor in the second through substrate opening. In an embodiment, the ESC carrier may further comprise a first electrode over the first surface of the carrier substrate and electrically coupled to the first conductor, and a second electrode over the first surface of the carrier substrate and electrically coupled to the second conductor. In an embodiment, an oxide layer may be formed over the first electrode and the second electrode.

公开(公告)号：US20190127842A1

公开(公告)日：2019-05-02

申请号：US15797361

申请日：2017-10-30

Applicant: APPLIED MATERIALS, INC.

Inventor： Viachslav BABAYAN ,  Adolph Miller ALLEN ,  Bhargav CITLA ,  Ronald D. DEDORE ,  Vanessa FAUNE ,  Zhong Qiang HUA ,  Vaibhav SONI ,  Menglu WU

IPC: C23C14/34 ,  C23C14/06 ,  C23C14/35 ,  H01J37/34 ,  H01L21/02

Abstract: An apparatus and method of forming a dielectric film layer using a physical vapor deposition process include delivering a sputter gas to a substrate positioned in a processing region of a process chamber, the process chamber having a dielectric-containing sputter target, delivering an energy pulse to the sputter gas to create a sputtering plasma, the sputtering plasma being formed by energy pulses having an average voltage between about 800 volts and about 2000 volts and an average current between about 50 amps and about 300 amps at a frequency which is less than 50 kHz and greater than 5 kHz and directing the sputtering plasma toward the dielectric-containing sputter target to form an ionized species comprising dielectric material sputtered from the dielectric-containing sputter target, the ionized species forming a dielectric-containing film on the substrate.

公开(公告)号：US20180107119A1

公开(公告)日：2018-04-19

申请号：US15844137

申请日：2017-12-15

Applicant: Applied Materials, Inc.

Inventor： Kyle M. HANSON ,  Gregory J. WILSON ,  Viachslav BABAYAN

IPC: G03F7/38

Abstract: Embodiments described herein relate to methods and apparatus for performing immersion field guided post exposure bake processes. Embodiments of apparatus described herein include a chamber body defining a processing volume. Electrodes may be disposed adjacent the process volume and process fluid is provided to the process volume via a plurality of fluid conduits to facilitate immersion field guided post exposure bake processes. A post process chamber for rinsing, developing, and drying a substrate is also provided.

公开(公告)号：US20170363960A1

公开(公告)日：2017-12-21

申请号：US15692087

申请日：2017-08-31

Applicant: Applied Materials, Inc.

Inventor： Viachslav BABAYAN ,  Douglas A. BUCHBERGER, Jr. ,  Qiwei LIANG ,  Ludovic GODET ,  Srinivas D. NEMANI ,  Daniel J. WOODRUFF ,  Randy HARRIS ,  Robert B. MOORE

IPC: G03F7/20 ,  H01L21/687

Abstract: Embodiments described herein relate to methods and apparatus for performing immersion field guided post exposure bake processes. Embodiments of apparatus described herein include a chamber body defining a processing volume. A pedestal may be disposed within the processing volume and a first electrode may be coupled to the pedestal. A moveable stem may extend through the chamber body opposite the pedestal and a second electrode may be coupled to the moveable stem. In certain embodiments, a fluid containment ring may be coupled to the pedestal and a dielectric containment ring may be coupled to the second electrode.

公开(公告)号：US20160357107A1

公开(公告)日：2016-12-08

申请号：US14733923

申请日：2015-06-08

Applicant: Applied Materials, Inc.

Inventor： Douglas A. BUCHBERGER, JR. ,  Sang Ki NAM ,  Viachslav BABAYAN ,  Christine Y OUYANG ,  Ludovic GODET ,  Srinivas D. NEMANI

IPC: G03F7/20

CPC classification number: G03F7/0045 ,  G03F7/38 ,  G03F7/70 ,  G03F7/70866

Abstract: Methods disclosed herein provide apparatus and method for applying an electric field and/or a magnetic field to a photoresist layer without air gap intervention during photolithography processes. In one embodiment, an apparatus includes a processing chamber comprising a substrate support having a substrate supporting surface, a heat source embedded in the substrate support configured to heat a substrate positioned on the substrate supporting surface, an electrode assembly configured to generate an electric field in a direction substantially perpendicular to the substrate supporting surface, wherein the electrode assembly is positioned opposite the substrate supporting surface having a downward surface facing the substrate supporting surface, wherein the electrode assembly is spaced apart from substrate support defining a processing volume between the electrode assembly and the substrate supporting surface, and a confinement ring disposed on an edge of the substrate support or the electrode assembly configured to retain an intermediate medium.

Abstract translation: 本文公开的方法提供了在光刻工艺期间没有气隙介入的情况下将电场和/或磁场施加到光致抗蚀剂层的装置和方法。 在一个实施例中，一种设备包括处理室，该处理室包括具有基板支撑表面的基板支撑件，嵌入在基板支撑件中的热源，该热源构造成加热位于基板支撑表面上的基板;电极组件， 基本上垂直于所述基板支撑表面的方向，其中所述电极组件与所述基板支撑表面相对定位，所述基板支撑表面具有面向所述基板支撑表面的向下表面，其中所述电极组件与限定所述电极组件和 衬底支撑表面以及设置在衬底支撑件的边缘上的限制环或被配置为保持中间介质的电极组件。