公开(公告)号：US20170363960A1

公开(公告)日：2017-12-21

申请号：US15692087

申请日：2017-08-31

Applicant: Applied Materials, Inc.

Inventor： Viachslav BABAYAN ,  Douglas A. BUCHBERGER, Jr. ,  Qiwei LIANG ,  Ludovic GODET ,  Srinivas D. NEMANI ,  Daniel J. WOODRUFF ,  Randy HARRIS ,  Robert B. MOORE

IPC: G03F7/20 ,  H01L21/687

Abstract: Embodiments described herein relate to methods and apparatus for performing immersion field guided post exposure bake processes. Embodiments of apparatus described herein include a chamber body defining a processing volume. A pedestal may be disposed within the processing volume and a first electrode may be coupled to the pedestal. A moveable stem may extend through the chamber body opposite the pedestal and a second electrode may be coupled to the moveable stem. In certain embodiments, a fluid containment ring may be coupled to the pedestal and a dielectric containment ring may be coupled to the second electrode.

公开(公告)号：US20170350004A1

公开(公告)日：2017-12-07

申请号：US15173356

申请日：2016-06-03

Applicant: Applied Materials, Inc.

Inventor： Tobin KAUFMAN-OSBORN ,  Srinivas D. NEMANI ,  Ludovic GODET ,  Qiwei LIANG ,  Adib KHAN

IPC: C23C16/04 ,  H01L21/67 ,  H01L21/677 ,  H01J37/32 ,  H01L21/8234

CPC classification number: C23C16/042 ,  C23C16/02 ,  C23C16/45502 ,  C23C16/45544 ,  C23C16/45561 ,  C23C16/45582 ,  C23C16/54 ,  C23C16/56 ,  H01J37/32357 ,  H01J37/32724 ,  H01J37/32733 ,  H01J37/32899 ,  H01J2237/327 ,  H01J2237/334 ,  H01L21/67069 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/67167 ,  H01L21/6719 ,  H01L21/67196 ,  H01L21/67207 ,  H01L21/67742 ,  H01L21/67748 ,  H01L21/67754 ,  H01L21/68785 ,  H01L21/823431

Abstract: Embodiments described herein relate to apparatus and methods for processing a substrate. In one embodiment, a cluster tool apparatus is provided having a transfer chamber and a pre-clean chamber, a self-assembled monolayer (SAM) deposition chamber, an atomic layer deposition (ALD) chamber, and a post-processing chamber disposed about the transfer chamber. A substrate may be processed by the cluster tool and transferred between the pre-clean chamber, the SAM deposition chamber, the ALD chamber, and the post-processing chamber. Transfer of the substrate between each of the chambers may be facilitated by the transfer chamber which houses a transfer robot.

公开(公告)号：US20160369395A1

公开(公告)日：2016-12-22

申请号：US15184670

申请日：2016-06-16

Applicant: Applied Materials, Inc.

Inventor： Qiwei LIANG ,  Srinivas D. NEMANI ,  Ellie Y. YIEH

IPC: C23C16/44 ,  C23C16/455 ,  C23C16/458

CPC classification number: C23C16/4412 ,  C23C16/45563 ,  C23C16/45574

Abstract: A process chamber is provided including a sidewall, a substrate support, and an exhaust vent disposed above the substrate support. A processing region is formed between the exhaust vent and substrate support, and the exhaust vent is coupled to an exhaust device configured to create a low pressure at the exhaust vent relative to the processing region. The process chamber further includes a gas ring including an annular shaped body having an inner surface that circumscribes an annular region. The gas ring further includes a plurality of first nozzles that are coupled to a first gas source and configured to deliver a first gas to the processing region. The gas ring further includes a plurality of second nozzles that are coupled to a second gas source and configured to deliver a second gas to the processing region.

Abstract translation: 提供了处理室，其包括侧壁，衬底支撑件和布置在衬底支撑件上方的排气口。 在排气口和衬底支撑件之间形成处理区域，并且排气口与被配置为在排气口处相对于处理区域产生低压的排气装置联接。 处理室还包括气环，该气环包括具有环绕环形区域的内表面的环形体。 气体环还包括多个第一喷嘴，其连接到第一气体源并被配置为将第一气体输送到处理区域。 气体环还包括多个第二喷嘴，其连接到第二气体源并被配置成将第二气体输送到处理区域。

公开(公告)号：US20220350251A1

公开(公告)日：2022-11-03

申请号：US17531108

申请日：2021-11-19

Applicant: Applied Materials, Inc.

Inventor： Dmitry LUBOMIRSKY ,  Douglas A. BUCHBERGER, JR. ,  Qiwei LIANG ,  Hyunjun KIM ,  Ellie Y. YIEH

IPC: G03F7/38 ,  H01J37/32

Abstract: A method and apparatus for performing post-exposure bake operations is described herein. The apparatus includes a plate stack and enables formation of a first high ion density plasma before the ion concentration within the first high ion density plasma is reduced using a diffuser to form a second low ion density plasma. The second low ion density plasma is an electron cloud or a dark plasma. An electric field is formed between a substrate support and the diffuser and through the second low ion density plasma during post-exposure bake of a substrate disposed on the substrate support. The second low ion density plasma electrically couples the substrate support and the diffuser during application of the electric field. The plate stack is equipped with power supplies and insulators to enable the formation or modification of a plasma within three regions of a process chamber.

公开(公告)号：US20210217585A1

公开(公告)日：2021-07-15

申请号：US17079783

申请日：2020-10-26

Applicant: APPLIED MATERIALS, INC.

Inventor： Qiwei LIANG ,  Srinivas D. NEMANI ,  Chentsau Chris YING ,  Ellie Y. YIEH ,  Erica CHEN ,  Nithin Thomas ALEX

IPC: H01J37/32 ,  H01L21/02 ,  C23C16/513

Abstract: A method and apparatus for depositing a carbon compound on a substrate includes using an inductively coupled plasma (ICP) chamber with a chamber body, a lid, an interior volume, a pumping apparatus, and a gas delivery system and a pedestal for supporting a substrate disposed within the interior volume of the ICP chamber, the pedestal has an upper portion formed from aluminum nitride with an upper surface that is configured to support and heat a substrate with embedded heating elements and a lower portion with a tube-like structure formed from aluminum nitride that is configured to support the upper portion and house electrodes for supplying power to the embedded heating elements of the upper portion, and the pedestal is configured to heat the substrate during deposition of a carbon compound film.

公开(公告)号：US20190368035A1

公开(公告)日：2019-12-05

申请号：US16383354

申请日：2019-04-12

Applicant: Applied Materials, Inc.

Inventor： Sultan MALIK ,  Srinivas D. NEMANI ,  Qiwei LIANG ,  Adib KHAN ,  Maximillian CLEMONS

IPC: C23C16/44

Abstract: Embodiments of the systems and methods herein are directed towards forming, via ALD or CVD, a protective film in-situ on a plurality of interior components of a process chamber. The interior components coated with the protective film include a chamber sidewall, a chamber bottom, a substrate support pedestal, a showerhead, and a chamber top. The protective film can be of various compositions including amorphous Si, carbosilane, polysilicon, SiC, SiN, SiO2, Al2O3, AlON, HfO2, or Ni3Al, and can vary in thickness from about 80 nm to about 250 nm.

公开(公告)号：US20190301009A1

公开(公告)日：2019-10-03

申请号：US16433064

申请日：2019-06-06

Applicant: Applied Materials, Inc.

Inventor： Tobin KAUFMAN-OSBORN ,  Srinivas D. NEMANI ,  Ludovic GODET ,  Qiwei LIANG ,  Adib KHAN

IPC: C23C16/04 ,  H01J37/32 ,  H01L21/677 ,  H01L21/67 ,  H01L21/687 ,  C23C16/56 ,  C23C16/54 ,  C23C16/455 ,  C23C16/02

Abstract: Embodiments described herein relate to apparatus and methods for processing a substrate. In one embodiment, a cluster tool apparatus is provided having a transfer chamber and a pre-clean chamber, a self-assembled monolayer (SAM) deposition chamber, an atomic layer deposition (ALD) chamber, and a post-processing chamber disposed about the transfer chamber. A substrate may be processed by the cluster tool and transferred between the pre-clean chamber, the SAM deposition chamber, the ALD chamber, and the post-processing chamber. Transfer of the substrate between each of the chambers may be facilitated by the transfer chamber which houses a transfer robot.

公开(公告)号：US20190194805A1

公开(公告)日：2019-06-27

申请号：US16290786

申请日：2019-03-01

Applicant: Applied Materials, Inc.

Inventor： Qiwei LIANG ,  Srinivas D. NEMANI ,  Ellie Y. YIEH

IPC: C23C16/44 ,  C23C16/455

CPC classification number: C23C16/4412 ,  C23C16/45563 ,  C23C16/45574

Abstract: A process chamber is provided including a sidewall, a substrate support, and an exhaust vent disposed above the substrate support. A processing region is formed between the exhaust vent and substrate support, and the exhaust vent is coupled to an exhaust device configured to create a low pressure at the exhaust vent relative to the processing region. The process chamber further includes a gas ring including an annular shaped body having an inner surface that circumscribes an annular region. The gas ring further includes a plurality of first nozzles that are coupled to a first gas source and configured to deliver a first gas to the processing region. The gas ring further includes a plurality of second nozzles that are coupled to a second gas source and configured to deliver a second gas to the processing region.

公开(公告)号：US20190048470A1

公开(公告)日：2019-02-14

申请号：US16164392

申请日：2018-10-18

Applicant: Applied Materials, Inc.

Inventor： Adib KHAN ,  Shankar VENKATARAMAN ,  Jay D. PINSON, II ,  Jang-Gyoo YANG ,  Nitin Krishnarao INGLE ,  Qiwei LIANG

IPC: C23C16/56 ,  H01L21/687 ,  H01L21/67 ,  H01L21/677 ,  C23C16/44 ,  H01L21/02 ,  C23C16/46 ,  C23C16/455

Abstract: Embodiments of the present disclosure generally relate to a batch processing chamber that is adapted to simultaneously cure multiple substrates at one time. The batch processing chamber includes multiple processing sub-regions that are each independently temperature controlled. The batch processing chamber may include a first and a second sub-processing region that are each serviced by a substrate transport device external to the batch processing chamber. In addition, a slotted cover mounted on the loading opening of the batch curing chamber reduces the effect of ambient air entering the chamber during loading and unloading.

公开(公告)号：US20170306491A1

公开(公告)日：2017-10-26

申请号：US15468758

申请日：2017-03-24

Applicant: Applied Materials, Inc.

Inventor： Qiwei LIANG ,  Adib KHAN ,  Tobin KAUFMAN-OSBORN ,  Srinivas D. NEMANI ,  Ludovic GODET

IPC: C23C16/455 ,  C23C16/46 ,  C23C16/458 ,  C23C16/505 ,  C23C16/44

CPC classification number: C23C16/45565 ,  B05D1/185 ,  B05D1/60 ,  C23C16/4405 ,  C23C16/4412 ,  C23C16/448 ,  C23C16/458 ,  C23C16/46 ,  C23C16/505

Abstract: Implementations described herein relate to apparatus and methods for self-assembled monolayer (SAM) deposition. Apparatus described herein includes processing chambers having various vapor phase delivery apparatus fluidly coupled thereto. SAM precursors may be delivered to process volumes of the chambers via various apparatus which is heated to maintain the precursors in vapor phase. In one implementation, a first ampoule or vaporizer configured to deliver a SAM precursor may be fluidly coupled to the process volume of a process chamber. A second ampoule or vaporizer configured to deliver a material different from the SAM precursor may also be fluidly coupled to the process volume of the process chamber.