公开(公告)号：US11848232B2

公开(公告)日：2023-12-19

申请号：US17839170

申请日：2022-06-13

Applicant: Applied Materials, Inc.

Inventor： Xin Liu ,  Fei Wang ,  Rui Cheng ,  Abhijit Basu Mallick ,  Robert Jan Visser

IPC: H01L21/768 ,  C23C16/01 ,  C23C16/24 ,  C23C16/455 ,  C23C16/46 ,  C23C16/56 ,  H01L21/02 ,  H01L21/3205 ,  H01L29/06

CPC classification number: H01L21/76837 ,  C23C16/01 ,  C23C16/24 ,  C23C16/45536 ,  C23C16/46 ,  C23C16/56 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/02532 ,  H01L21/32055 ,  H01L29/0649

Abstract: Embodiments of the present disclosure relate to processes for filling trenches. The process includes depositing a first amorphous silicon layer on a surface of a layer and a second amorphous silicon layer in a portion of a trench formed in the layer, and portions of side walls of the trench are exposed. The first amorphous silicon layer is removed. The process further includes depositing a third amorphous silicon layer on the surface of the layer and a fourth amorphous silicon layer on the second amorphous silicon layer. The third amorphous silicon layer is removed. The deposition/removal cyclic processes may be repeated until the trench is filled with amorphous silicon layers. The amorphous silicon layers form a seamless amorphous silicon gap fill in the trench since the amorphous silicon layers are formed from bottom up.

公开(公告)号：US10714339B2

公开(公告)日：2020-07-14

申请号：US16246776

申请日：2019-01-14

Applicant: Applied Materials, Inc.

Inventor： Fei Wang ,  Miaojun Wang ,  Pramit Manna ,  Shishi Jiang ,  Abhijit Basu Mallick ,  Robert Jan Visser

IPC: H01L21/027 ,  H01L21/02 ,  H01L21/3205 ,  H01L21/32 ,  H01L21/311

Abstract: Methods of selectively depositing a mask layer on a surface of a patterned substrate and self-aligned patterned masks are provided herein. In one embodiment, a method of selectivity depositing a mask layer includes positioning the patterned substrate on a substrate support in a processing volume of a processing chamber, exposing the surface of the patterned substrate to a parylene monomer gas, forming a first layer on the patterned substrate, wherein the first layer comprises a patterned parylene layer, and depositing a second layer on the first layer. In another embodiment, a self-aligned patterned mask comprises a parylene layer comprising a plurality of parylene features and a plurality of openings, the parylene layer is disposed on a patterned substrate comprising a dielectric layer and a plurality of metal features, the plurality of metal feature comprise a parylene deposition inhibitor metal, and the plurality of parylene features are selectivity formed on dielectric surfaces of the dielectric layer.

公开(公告)号：US09859128B2

公开(公告)日：2018-01-02

申请号：US15337781

申请日：2016-10-28

Applicant: APPLIED MATERIALS, INC.

Inventor： Fei Wang ,  Mikhail Korolik ,  Nitin K. Ingle ,  Anchuan Wang ,  Robert Jan Visser

IPC: H01L21/311 ,  H01L21/461 ,  H01L21/02

CPC classification number: H01L21/31144 ,  C09D183/08 ,  H01J37/3244 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/0337 ,  H01L21/3105 ,  H01L21/31116

Abstract: Methods of etching silicon nitride faster than silicon or silicon oxide are described. Methods of selectively depositing additional material onto the silicon nitride are also described. Exposed portions of silicon nitride and silicon oxide may both be present on a patterned substrate. A self-assembled monolayer (SAM) is selectively deposited over the silicon oxide but not on the exposed silicon nitride. Molecules of the self-assembled monolayer include a head moiety and a tail moiety, the head moiety forming a bond with the OH group on the exposed silicon oxide portion and the tail moiety extending away from the patterned substrate. A subsequent exposure to an etchant or a deposition precursor may then be used to selectively remove silicon nitride or to selectively deposit additional material on the silicon nitride.

公开(公告)号：US09576815B2

公开(公告)日：2017-02-21

申请号：US14690165

申请日：2015-04-17

Applicant: Applied Materials, Inc.

Inventor： Jingjing Xu ,  Fei Wang ,  Anchuan Wang ,  Nitin K. Ingle ,  Robert Jan Visser

IPC: H01L21/302 ,  H01L21/311

CPC classification number: H01L21/31116

Abstract: A method of etching silicon nitride on patterned heterogeneous structures is described and includes a gas phase etch using anhydrous vapor-phase HF. The HF may be combined with one or more of several precursors in the substrate processing region and near the substrate to increase the silicon nitride etch rate and/or the silicon nitride selectivity. The silicon nitride etch selectivity is increased most notably when compared with silicon of various forms. No precursors are excited in any plasma either outside or inside the substrate processing region according to embodiments. The HF may be flowed through one set of channels in a dual-channel showerhead while the other precursor is flowed through a second set of channels in the dual-channel showerhead.

Abstract translation: 描述了在图案化异质结构上蚀刻氮化硅的方法，并且包括使用无水气相HF的气相蚀刻。 HF可以与衬底处理区域和衬底附近的几种前体中的一种或多种组合以增加氮化硅蚀刻速率和/或氮化硅选择性。 当与各种形式的硅相比时，氮化硅蚀刻选择性最显着地增加。 根据实施例，在衬底处理区域的外部或内部，在任何等离子体中都不会激发前体。 HF可以在双通道喷头中流过一组通道，而另一个前体流经双通道喷头中的第二组通道。

公开(公告)号：US09331331B1

公开(公告)日：2016-05-03

申请号：US13766558

申请日：2013-02-13

Applicant: Applied Materials, Inc.

Inventor： Fei Wang ,  Subramanya P. Herle ,  Joseph G. Gordon ,  GirishKumar Gopalakrishnan Nair

IPC: B05D5/12 ,  H01M4/04 ,  H01M4/36

CPC classification number: H01M4/0419 ,  H01M4/131 ,  H01M4/1391 ,  H01M4/505 ,  H01M4/525 ,  H01M4/622 ,  H01M4/661 ,  H01M2004/021

Abstract: The present invention generally relates to using water-based binders for high voltage cathode materials, such as LMNO (spinel LiNi0.5Mn1.5O4), in Li-ion batteries. An example of a water compatible polymer binder according to some embodiments of the present invention is a combination of CMC (carboxymethylcellulose) and a second water compatible polymer that produce coatings of adequate thickness and loading (mAh/cm2). A method of forming a cathode for a Li-ion battery may include: preparing an aqueous solution of CMC; mixing together LMNO and carbon black; combining the LMNO and carbon black mixture with the CMC solution, an aqueous polyacrylic solution and distilled water, and mixing to form a slurry; coating a conductive substrate with the slurry; and drying the coated substrate, forming a cathode layer on the substrate. Furthermore, this invention describes a cathode for Li-ion batteries and tools for carrying out the above method.

Abstract translation: 本发明一般涉及使用锂离子电池中的高电压阴极材料如LMNO（尖晶石LiNi0.5Mn1.5O4）的水性粘合剂。 根据本发明的一些实施方案的水相容性聚合物粘合剂的实例是CMC（羧甲基纤维素）和产生足够厚度和负载（mAh / cm 2）的涂层的第二水相容性聚合物的组合。 形成锂离子电池阴极的方法可以包括：制备CMC的水溶液; 混合在一起的LMNO和炭黑; 将LMNO和炭黑混合物与CMC溶液，水性聚丙烯酸溶液和蒸馏水结合，混合形成浆料; 用浆料涂覆导电基材; 并干燥涂覆的基底，在基底上形成阴极层。 此外，本发明描述了用于实施上述方法的用于锂离子电池的阴极和工具。

公开(公告)号：US20230097519A1

公开(公告)日：2023-03-30

申请号：US17955431

申请日：2022-09-28

Applicant: Applied Materials, Inc.

Inventor： Fei Wang ,  Pravin K. Narwankar

IPC: A61K9/50

Abstract: This disclosure pertains to coated drug compositions and methods of preparing coated drug compositions with a low temperature silicon oxide coating. Specifically, the instant application discloses a method to coat active pharmaceutical ingredient particles using a silicon precursor and a catalyst at a low temperature.

公开(公告)号：US11081348B2

公开(公告)日：2021-08-03

申请号：US16001251

申请日：2018-06-06

Applicant: Applied Materials, Inc.

Inventor： Rui Cheng ,  Fei Wang ,  Abhijit Basu Mallick ,  Robert Jan Visser

IPC: H01L21/02 ,  A61K9/00 ,  A61K31/438 ,  A61K31/4409 ,  A61K31/47 ,  A61K31/497 ,  A61K47/12 ,  A61K47/26 ,  A61K47/36 ,  H01L21/3065

Abstract: Methods for selective silicon film deposition on a substrate comprising a first surface and a second surface are described. More specifically, the process of depositing a film, treating the film to change some film property and selectively etching the film from various surfaces of the substrate are described. The deposition, treatment and etching can be repeated to selectively deposit a film on one of the two substrate surfaces.

公开(公告)号：US20170148640A1

公开(公告)日：2017-05-25

申请号：US15235048

申请日：2016-08-11

Applicant: APPLIED MATERIALS, INC.

Inventor： Fei Wang ,  Mikhail Korolik ,  Nitin K. Ingle ,  Anchuan Wang ,  Robert Jan Visser

IPC: H01L21/311 ,  H01L21/02

CPC classification number: H01L21/31116 ,  H01J37/3244 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/0337 ,  H01L21/3105 ,  H01L21/31144

Abstract: Methods of etching silicon nitride faster than silicon oxide are described. Exposed portions of silicon nitride and silicon oxide may both be present on a patterned substrate. A self-assembled monolayer (SAM) is selectively deposited over the silicon oxide but not on the exposed silicon nitride. Molecules of the self-assembled monolayer include a head moiety and a tail moiety, the head moiety forming a bond with the OH group on the exposed silicon oxide portion and the tail moiety extending away from the patterned substrate. A subsequent gas-phase etch using anhydrous vapor-phase HF may then be used to selectively remove silicon nitride much faster than silicon oxide because the SAM has been found to delay the etch and reduce the etch rate.

公开(公告)号：US12161759B2

公开(公告)日：2024-12-10

申请号：US17341213

申请日：2021-06-07

Applicant: Applied Materials, Inc.

Inventor： Fei Wang ,  Miaojun Wang ,  Balaji Ganapathy ,  Jonathan Frankel ,  Shivkumar Chiruvolu ,  Pravin K. Narwankar

IPC: A61K9/50 ,  A61K31/397 ,  A61K31/4422 ,  A61K31/517

Abstract: A pharmaceutical composition containing a metal oxide coated particle comprising 1) an amorphous solid dispersion (ASD) core containing an active pharmaceutical ingredient (API) and a polymer; and 2) a metal oxide coating, and the method of making said metal oxide coated particle by atomic layer deposition (ALD). The metal oxide coated particle is useful because it prevents the ASD from crystallization and helps maintain the ASD in an amorphous form.

公开(公告)号：US11769666B2

公开(公告)日：2023-09-26

申请号：US17379508

申请日：2021-07-19

Applicant: Applied Materials, Inc.

Inventor： Rui Cheng ,  Fei Wang ,  Abhijit Basu Mallick ,  Robert Jan Visser

IPC: H01L21/02 ,  A61K9/00 ,  A61K31/438 ,  A61K31/4409 ,  A61K31/47 ,  A61K31/497 ,  A61K47/12 ,  A61K47/26 ,  A61K47/36 ,  H01L21/3065

CPC classification number: H01L21/02636 ,  A61K9/0024 ,  A61K31/438 ,  A61K31/4409 ,  A61K31/47 ,  A61K31/497 ,  A61K47/12 ,  A61K47/26 ,  A61K47/36 ,  H01L21/0262 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02491 ,  H01L21/02532 ,  H01L21/02639 ,  H01L21/02642 ,  H01L21/02664 ,  H01L21/3065

Abstract: Methods for selective silicon film deposition on a substrate comprising a first surface and a second surface are described. More specifically, the process of depositing a film, treating the film to change some film property and selectively etching the film from various surfaces of the substrate are described. The deposition, treatment and etching can be repeated to selectively deposit a film on one of the two substrate surfaces.