公开(公告)号：US20150170888A1

公开(公告)日：2015-06-18

申请号：US14182831

申请日：2014-02-18

Applicant: APPLIED MATERIALS, INC.

Inventor： MARTIN LEE RIKER ,  UDAY PAI ,  WILLIAM FRUCHTERMAN ,  KEITH A. MILLER ,  MUHAMMAD M. RASHEED ,  THANH X. NGUYEN ,  KIRANKUMAR SAVANDAIAH

IPC: H01J37/34

CPC classification number: H01J37/3414 ,  C23C14/3407 ,  H01J37/3411 ,  H01J37/3423 ,  H01J37/3435

Abstract: Embodiments of target assemblies for use in substrate processing chambers are provided herein. In some embodiments, a target assembly includes a plate comprising a first side including a central portion and a support portion; a target disposed on the central portion; a plurality of recesses formed in the support portion; and a plurality of pads partially disposed in the plurality of recesses.

Abstract translation: 本文提供了用于基板处理室的目标组件的实施例。 在一些实施例中，目标组件包括板，其包括包括中心部分和支撑部分的第一侧面; 设置在中心部分上的目标; 形成在所述支撑部中的多个凹部; 以及部分地设置在所述多个凹部中的多个垫。

公开(公告)号：US20150075980A1

公开(公告)日：2015-03-19

申请号：US14486223

申请日：2014-09-15

Applicant: APPLIED MATERIALS, INC.

Inventor： THANH NGUYEN ,  RONGJUN WANG ,  MUHAMMAD M. RASHEED ,  XIANMIN TANG

IPC: H01J37/32 ,  C23C14/34

CPC classification number: H01J37/3441 ,  C23C14/34 ,  C23C14/564

Abstract: Apparatus for physical vapor deposition are provided. In some embodiments, an apparatus for use in a physical vapor deposition substrate processing chamber includes a process shield having a central opening passing through a body of the process shield and defining a processing volume of the substrate processing chamber, wherein the process shield comprises an annular dark space shield fabricated from a ceramic material and an annular ground shield fabricated from a conductive material, and wherein a ratio of a length of the annular dark space shield to a length of the annular ground shield is about 2:1 to about 1.6:1.

Abstract translation: 提供了用于物理气相沉积的装置。 在一些实施例中，用于物理气相沉积基板处理室的装置包括具有穿过过程屏蔽体的中心开口并限定基板处理室的处理体积的过程屏蔽，其中过程屏蔽包括环形 由陶瓷材料制成的暗空间屏蔽和由导电材料制成的环形接地屏蔽，并且其中所述环形暗空间屏蔽件的长度与所述环形接地屏蔽件的长度的比率为约2:1至约1.6:1 。