公开(公告)号：US20150075980A1

公开(公告)日：2015-03-19

申请号：US14486223

申请日：2014-09-15

Applicant: APPLIED MATERIALS, INC.

Inventor： THANH NGUYEN ,  RONGJUN WANG ,  MUHAMMAD M. RASHEED ,  XIANMIN TANG

IPC: H01J37/32 ,  C23C14/34

CPC classification number: H01J37/3441 ,  C23C14/34 ,  C23C14/564

Abstract: Apparatus for physical vapor deposition are provided. In some embodiments, an apparatus for use in a physical vapor deposition substrate processing chamber includes a process shield having a central opening passing through a body of the process shield and defining a processing volume of the substrate processing chamber, wherein the process shield comprises an annular dark space shield fabricated from a ceramic material and an annular ground shield fabricated from a conductive material, and wherein a ratio of a length of the annular dark space shield to a length of the annular ground shield is about 2:1 to about 1.6:1.

Abstract translation: 提供了用于物理气相沉积的装置。 在一些实施例中，用于物理气相沉积基板处理室的装置包括具有穿过过程屏蔽体的中心开口并限定基板处理室的处理体积的过程屏蔽，其中过程屏蔽包括环形 由陶瓷材料制成的暗空间屏蔽和由导电材料制成的环形接地屏蔽，并且其中所述环形暗空间屏蔽件的长度与所述环形接地屏蔽件的长度的比率为约2:1至约1.6:1 。