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公开(公告)号：US11418010B2
公开(公告)日：2022-08-16
申请号：US16812411
申请日：2020-03-09
Applicant: Apple Inc.
Inventor： Weiping Li , Arnaud Laflaquière , Xiaolong Fang
Abstract: An optoelectronic device includes a semiconductor substrate. A first set of thin-film layers is disposed on the substrate and defines a lower distributed Bragg-reflector (DBR) stack. A second set of thin-film layers is disposed over the lower DBR stack and defines an optical emission region, which is contained in a mesa defined by multiple trenches, which are disposed around the optical emission region without fully surrounding the optical emission region. A third set of thin-film layers is disposed over the optical emission region and defines an upper DBR stack. Electrodes are disposed around the mesa in gaps between the trenches and are configured to apply an excitation current to the optical emission region.
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公开(公告)号：US11418006B1
公开(公告)日：2022-08-16
申请号：US16538860
申请日：2019-08-13
Applicant: Apple Inc.
Inventor： Arnaud Laflaquière , Fei Tan , Keith Lyon
IPC: H01S5/00 , H01S5/026 , H01S5/42 , H01S5/183 , H01S5/02 , H01S5/343 , H01S5/042 , G01S7/481 , G01S17/10
Abstract: An optoelectronic device includes a semiconductor substrate and an optically-active structure, including epitaxial layers defining a lower distributed Bragg-reflector (DBR) stack, a quantum well structure with P- and N-doped layers disposed respectively on opposing sides of the quantum well structure, and an upper DBR stack. Electrodes are coupled to apply a bias voltage between the P- and N-doped layers. Control circuitry, disposed on the substrate, is configured to apply a forward bias voltage between the electrodes so as to cause the optically-active structure to emit an optical pulse through the upper DBR stack, and then to reverse the bias voltage between the electrodes so as to cause the optically-active structure to output an electrical pulse to the control circuitry in response to incidence of one or more of the photons, due to reflection of the optical pulse, on the quantum well structure through the upper DBR stack.
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公开(公告)号：US11415679B2
公开(公告)日：2022-08-16
申请号：US16752653
申请日：2020-01-26
Applicant: Apple Inc.
Inventor： Anup K. Sharma , Arnaud Laflaquière , Gennadiy A. Agranov , Gershon Rosenblum , Shingo Mandai
IPC: G01S7/4865 , H01L31/02 , G01S7/483 , G04F10/00 , G01S17/10 , G01S7/4863 , G01S17/18 , G01S17/894
Abstract: A sensing device includes a first array of sensing elements, which output a signal indicative of a time of incidence of a single photon on the sensing element. A second array of processing circuits are coupled respectively to the sensing elements and comprise a gating generator, which variably sets a start time of the gating interval for each sensing element within each acquisition period, and a memory, which records the time of incidence of the single photon on each sensing element in each acquisition period. A controller sets, in each of at least some of the acquisition periods, different, respective gating intervals for different ones of the sensing elements.
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公开(公告)号：US20210013372A1
公开(公告)日：2021-01-14
申请号：US17031955
申请日：2020-09-25
Applicant: Apple Inc.
Inventor： Arnaud Laflaquière , Marc Drader
Abstract: An optoelectronic device includes a semiconductor substrate and a monolithic array of light-emitting elements formed on the substrate. The light-emitting elements include a first plurality of first emitters, configured to emit respective first beams of light with a first angular divergence, at respective first positions in the array, and a second plurality of second emitters, configured to emit respective second beams of light with a second angular divergence that is at least 50% greater than the first angular divergence, at respective second positions in the array.
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公开(公告)号：US20200313391A1
公开(公告)日：2020-10-01
申请号：US16812411
申请日：2020-03-09
Applicant: Apple Inc.
Inventor： Weiping Li , Arnaud Laflaquière , Xiaolong Fang
Abstract: An optoelectronic device includes a semiconductor substrate. A first set of thin-film layers is disposed on the substrate and defines a lower distributed Bragg-reflector (DBR) stack. A second set of thin-film layers is disposed over the lower DBR stack and defines an optical emission region, which is contained in a mesa defined by multiple trenches, which are disposed around the optical emission region without fully surrounding the optical emission region. A third set of thin-film layers is disposed over the optical emission region and defines an upper DBR stack. Electrodes are disposed around the mesa in gaps between the trenches and are configured to apply an excitation current to the optical emission region.
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Patent Agency Ranking
公开(公告)号：US20180287345A1
公开(公告)日：2018-10-04
申请号：US15841345
申请日：2017-12-14
Applicant: APPLE INC.
Inventor： Arnaud Laflaquière , Marc Drader , Christophe Vérove
Abstract: An optoelectronic device includes a semiconductor substrate with a first set of epitaxial layers formed on an area of the substrate defining a lower distributed Bragg-reflector (DBR) stack. A second set of epitaxial layers formed over the first set defines a quantum well structure, and a third set of epitaxial layers, formed over the second set, defines an upper DBR stack. At least the third set of epitaxial layers is contained in a mesa having sides that are perpendicular to the epitaxial layers. A dielectric coating extends over the sides of at least a part of the mesa that contains the third set of epitaxial layers. Electrodes are coupled to the epitaxial layers so as to apply an excitation current to the quantum well structure.
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公开(公告)号：US11973315B2
公开(公告)日：2024-04-30
申请号：US17706651
申请日：2022-03-29
Applicant: APPLE INC.
Inventor： Jae Y. Park , Arnaud Laflaquière , Christophe Vérove , Fei Tan
CPC classification number: H01S5/18308 , H01S5/18358 , H01S5/18366 , H01S5/18369 , H01S5/3095 , H01S5/34313 , H01S5/426
Abstract: An optoelectronic device includes a carrier substrate and a lower distributed Bragg-reflector (DBR) stack disposed on an area of the substrate and including alternating first layers. A set of epitaxial layers disposed over the lower DBR includes a quantum well structure. An upper DBR stack disposed over the set of epitaxial layers includes alternating second layers. Electrodes apply an excitation current to the quantum well structure. At least one of the electrodes includes a metal ring disposed at an inner side of at least one of the DBR stacks in proximity to the quantum well structure. One or more metal vias pass through the at least one of the DBR stacks so as to connect the metal ring at the inner side of the at least one of the DBR stacks to an electrical contact on an outer side of the at least one of the DBR stacks.
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公开(公告)号：US20240088623A1
公开(公告)日：2024-03-14
申请号：US17944213
申请日：2022-09-14
Applicant: Apple Inc.
Inventor： Siddharth Joshi , Keith Lyon , Arnaud Laflaquière , Christophe Verove
Abstract: An integrated emitter device incudes a silicon die, including an array of control circuits, and a plurality of integrated emitter modules disposed on the silicon die. Each integrated emitter module includes a single epitaxial stack comprising multiple layers of III-V semiconductor compounds, which define a vertical emitter including an optically active layer and upper and lower distributed Bragg reflectors (DBRs) on opposing sides of the optically active layer, and a transistor in series with the vertical emitter and including a terminal in contact with a respective one of the control circuits, so as to actuate the vertical emitter in response to a control signal applied to the terminal by the respective one of the control circuits.
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公开(公告)号：US20240079440A1
公开(公告)日：2024-03-07
申请号：US17903067
申请日：2022-09-06
Applicant: Apple Inc.
Inventor： Oray O. Cellek , Fei Tan , Gershon Rosenblum , Hong Wei Lee , Cheng-Ying Tsai , Jae Y. Park , Christophe Verove , John L Orlowski , Siddharth Joshi , Xiangli Li , David Coulon , Xiaofeng Fan , Keith Lyon , Nicolas Hotellier , Arnaud Laflaquière
IPC: H01L27/146 , H04N5/378
CPC classification number: H01L27/14652 , H01L27/14621 , H01L27/14636 , H01L27/1465 , H04N5/378
Abstract: A multispectral sensing device includes a first die, including silicon, which is patterned to define a first array of sensor elements, which output first electrical signals in response to optical radiation that is incident on the device in a band of wavelengths less than 1000 nm that is incident on the front side of the first die. A second die has its first side bonded to the back side of the first die and includes a photosensitive material and is patterned to define a second array of sensor elements, which output second electrical signals in response to the optical radiation that is incident on the device in a second band of wavelengths greater than 1000 nm that passes through the first die and is incident on the first side of the second die. Readout circuitry reads the first electrical signals and the second electrical signals serially out of the device.
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公开(公告)号：US20220404475A1
公开(公告)日：2022-12-22
申请号：US17714161
申请日：2022-04-06
Applicant: Apple Inc.
Inventor： Arnaud Laflaquière , Cristiano L Niclass , Marc Drader
IPC: G01S7/4863 , H01L23/00 , G01S17/10
Abstract: An optoelectronic device includes a first semiconductor die, having first front and rear surfaces and including at least one avalanche photodetector configured to output electrical pulses in response to photons incident on the first front surface. A second semiconductor die has a second front surface, which is bonded to the first rear surface, and a second rear surface, and includes a photodetector receiver analog circuit coupled to the at least one avalanche photodetector and an emitter driver circuit configured to drive a pulsed optical emitter. A third semiconductor die has a third front surface, which is bonded to the second rear surface, and a third rear surface, and includes logic circuits coupled to control the photodetector receiver analog circuit and the emitter driver circuit and to receive and process the electrical pulses output by the at least one avalanche photodetector.
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