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    Laterally unconfined structure
    13.
    发明授权
    Laterally unconfined structure 有权

    公开(公告)号：US11735523B2

    公开(公告)日：2023-08-22

    申请号：US17314555

    申请日：2021-05-07

    Applicant: ADEIA SEMICONDUCTOR BONDING TECHNOLOGIES INC.

    Inventor： Cyprian Emeka Uzoh

    IPC: H01L21/00 ,  H01L23/528 ,  H01L21/768

    CPC classification number: H01L23/528 ,  H01L21/76898

    Abstract: Techniques are employed to mitigate the anchoring effects of cavity sidewall adhesion on an embedded conductive interconnect structure, and to allow a lower annealing temperature to be used to join opposing conductive interconnect structures. A vertical gap may be disposed between the conductive material of an embedded interconnect structure and the sidewall of the cavity to laterally unpin the conductive structure and allow uniaxial expansion of the conductive material. Additionally or alternatively, one or more vertical gaps may be disposed within the bonding layer, near the embedded interconnect structure to laterally unpin the conductive structure and allow uniaxial expansion of the conductive material.

    METHOD OF BONDING THIN SUBSTRATES
    17.
    发明申请
    METHOD OF BONDING THIN SUBSTRATES 有权

    公开(公告)号：US20230115122A1

    公开(公告)日：2023-04-13

    申请号：US17931826

    申请日：2022-09-13

    Applicant: ADEIA SEMICONDUCTOR BONDING TECHNOLOGIES INC.

    Inventor： Cyprian Emeka Uzoh ,  Thomas Workman ,  Gabriel Z. Guevara ,  Dominik Suwito ,  Guilian Gao

    IPC: H01L21/762 ,  H01L21/786 ,  H01L21/321 ,  H01L21/02

    Abstract: Methods of bonding thin dies to substrates. In one such method, a wafer is attached to a support layer. The wafer and support layer are attached to a dicing structure and then singulated to form a plurality of semiconductor die components. Each semiconductor die component comprises a thinned die and a support layer section attached to the thinned die where each support layer section is disposed between the corresponding thinned die and the dicing structure. At least one of the semiconductor die components is then bonded to a substrate without an intervening adhesive such that the thinned die is disposed between the substrate and the support layer section. The support layer section is then removed from the thinned die.

    Structure with conductive feature and method of forming same
    18.
    发明授权
    Structure with conductive feature and method of forming same 有权

    公开(公告)号：US12211809B2

    公开(公告)日：2025-01-28

    申请号：US17564550

    申请日：2021-12-29

    Applicant: ADEIA SEMICONDUCTOR BONDING TECHNOLOGIES INC.

    Inventor： Cyprian Emeka Uzoh

    IPC: H01L23/00

    Abstract: An element is disclosed. The element can include a non-conductive structure having a non-conductive bonding surface, a cavity at least partially extending through a portion of a thickness of the non-conductive structure from the non-conductive bonding surface, and a conductive pad disposed in the cavity. The cavity has a bottom side and a sidewall. The conductive pad has a bonding surface and a back side opposite the bonding surface. An average size of the grains at the bonding surface is smaller than an average size of the grains adjacent the bottom side of the cavity. The conductive pad can include a crystal structure with grains oriented along a 111 crystal plane. The element can be bonded to another element to form a bonded structure. The element and the other element can be directly bonded to one another without an intervening adhesive.

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