公开(公告)号：US20240222316A1

公开(公告)日：2024-07-04

申请号：US18400697

申请日：2023-12-29

Applicant: Adeia Semiconductor Bonding Technologies Inc.

Inventor： Pawel Mrozek ,  Gaius Gillman Fountain, JR.

IPC: H01L23/00

CPC classification number: H01L24/80 ,  H01L2224/80205 ,  H01L2224/80895 ,  H01L2224/80896

Abstract: A method of forming direct metal bonds between a first device and a second device is provided. The method may include heating a workpiece to a temperature between 40 C and 150 C, and directing sonic energy towards the heated workpiece. Here, the workpiece may include the first device and the second device directly bonded to the first device through a dielectric material interface.

公开(公告)号：US20240213210A1

公开(公告)日：2024-06-27

申请号：US18146265

申请日：2022-12-23

Applicant: Adeia Semiconductor Bonding Technologies Inc.

Inventor： Belgacem Haba ,  Pawel Mrozek

IPC: H01L23/00

CPC classification number: H01L24/80 ,  H01L24/74 ,  H01L2224/802 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2224/80908

Abstract: A method includes moving at least one of a first element and a second element to contact first regions of the first and second elements with one another while second regions of the first and second elements are not in contact with one another. The first regions directly bond to one another to form a bond interface without adhesive. The method further includes directly bonding the second regions of the first and second elements to one another without adhesive by controllably releasing one of the first element and the second element such that the bond interface and a boundary between the bond interface and the second regions not in contact with one another expands radially away from the first regions. The second regions have first vibrations within a bond initiation region bordering the boundary. The method further includes externally applying second vibrations to at least one of the first and second elements during the directly bonding. The second vibrations are in antiphase with the first vibrations in the bond initiation region.

公开(公告)号：US20240021573A1

公开(公告)日：2024-01-18

申请号：US18353019

申请日：2023-07-14

Applicant: ADEIA SEMICONDUCTOR BONDING TECHNOLOGIES INC.

Inventor： Cyprian Emeka Uzoh ,  Pawel Mrozek

IPC: H01L23/00

CPC classification number: H01L24/80 ,  H01L24/08 ,  H01L2224/08145 ,  H01L2224/80896 ,  H01L2224/80013 ,  H01L2224/80031 ,  H01L2224/80895 ,  H01L2224/80011

Abstract: Reliable hybrid bonded apparatuses are provided. An example process cleans nanoparticles from at least the smooth oxide top layer of a surface to be hybrid bonded after the surface has already been activated for the hybrid bonding. Conventionally, such an operation is discouraged. However, the example cleaning processes described herein increase the electrical reliability of microelectronic devices. Extraneous metal nanoparticles can enable undesirable current and signal leakage from finely spaced traces, especially at higher voltages with ultra-fine trace pitches. In the example process, the extraneous nanoparticles may be both physically removed and/or dissolved without detriment to the activated bonding surface.

公开(公告)号：US20230299029A1

公开(公告)日：2023-09-21

申请号：US18183828

申请日：2023-03-14

Applicant: ADEIA SEMICONDUCTOR BONDING TECHNOLOGIES INC.

Inventor： Jeremy Alfred Theil ,  Thomas Workman ,  Cyprian Emeka Uzoh ,  Jesus Perez ,  Pawel Mrozek

IPC: H01L23/00

CPC classification number: H01L24/08 ,  H01L2224/0801 ,  H01L2224/08111 ,  H01L2224/08503

Abstract: An element and a bonded structure including the element are disclosed. The element can include a non-conductive region having a cavity extending at least partially through a thickness of the non-conductive region from the contact surface, and a contact feature formed in the cavity. The non-conductive region is configured to directly bond to a non-conductive region of a second element. The contact pad of the element is configured to directly bond to a contact pad of the second element. The contact pad can include a first conductive material and a second conductive material. The first conductive material can have a unit cell size greater than a unit cell size of the second conductive material. The first conductive material can be a metal alloying material. The first conductive material can be a metal silicide and the second conductive material can be a metal. A bonded conductive contact can include a conductive material and an alloying element, and an amount of the alloying element can vary through a thickness of the bonded conductive contact.

公开(公告)号：US11742314B2

公开(公告)日：2023-08-29

申请号：US17208695

申请日：2021-03-22

Applicant: ADEIA SEMICONDUCTOR BONDING TECHNOLOGIES INC.

Inventor： Cyprian Emeka Uzoh ,  Pawel Mrozek

IPC: H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L23/00

CPC classification number: H01L24/80 ,  H01L24/08 ,  H01L2224/08145 ,  H01L2224/80011 ,  H01L2224/80013 ,  H01L2224/80031 ,  H01L2224/80895 ,  H01L2224/80896

Abstract: Reliable hybrid bonded apparatuses are provided. An example process cleans nanoparticles from at least the smooth oxide top layer of a surface to be hybrid bonded after the surface has already been activated for the hybrid bonding. Conventionally, such an operation is discouraged. However, the example cleaning processes described herein increase the electrical reliability of microelectronic devices. Extraneous metal nanoparticles can enable undesirable current and signal leakage from finely spaced traces, especially at higher voltages with ultra-fine trace pitches. In the example process, the extraneous nanoparticles may be both physically removed and/or dissolved without detriment to the activated bonding surface.

公开(公告)号：US20240387419A1

公开(公告)日：2024-11-21

申请号：US18319786

申请日：2023-05-18

Applicant: ADEIA SEMICONDUCTOR BONDING TECHNOLOGIES INC.

Inventor： Pawel Mrozek ,  Gaius Gillman Fountain, JR.

IPC: H01L23/00 ,  H01L25/065

Abstract: An element, a bonded structure that includes the element, and methods of forming the same are disclosed. The element can include a nonconductive field region having a surface defining at least a portion of a bonding surface of the element. The surface of the nonconductive field region is prepared for direct bonding. The element can also include a conductive feature having an upper surface that defines at least a portion of the bonding surface of the element, a lower surface opposite the upper surface, and a sidewall that extends between the upper surface and the lower surface. An angle between the upper surface and the sidewall is about 75° or less. The bonded structure includes the element and a second element directly bonded to one another without an intervening adhesive.

公开(公告)号：US20230197453A1

公开(公告)日：2023-06-22

申请号：US18066159

申请日：2022-12-14

Applicant: ADEIA SEMICONDUCTOR BONDING TECHNOLOGIES INC.

Inventor： Gaius Gillman Fountain, JR. ,  George Carlton Hudson ,  Pawel Mrozek ,  Cyprian Emeka Uzoh ,  Jeremy Alfred Theil

IPC: H01L21/18 ,  H01L21/285 ,  H01L21/288

CPC classification number: H01L21/187 ,  H01L21/28568 ,  H01L21/28556 ,  H01L21/2885

Abstract: Structures and methods for direct bonding are disclosed. A bonded structure can include a first element and a second element. The first element can include a first non-conductive structure that has a non-conductive bonding surface, a cavity that extends at least partially through a thickness of the non-conductive structure from the non-conductive bonding surface, and a first conductive feature that has a first conductive material and a second conductive material over the first conductive material disposed in the cavity. A maximum grain size, in a linear lateral dimension, of the second conductive material can be smaller than 20% of the linear lateral dimension of the conductive feature. There can be less than 20 parts per million (ppm) of impurities at grain boundaries of the second conductive material.