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    HETEROJUNCTION BIPOLAR TRANSISTOR
    11.
    发明公开
    HETEROJUNCTION BIPOLAR TRANSISTOR 审中-公开

    公开(公告)号：US20230307527A1

    公开(公告)日：2023-09-28

    申请号：US18327893

    申请日：2023-06-02

    Applicant: VISUAL PHOTONICS EPITAXY CO., LTD.

    Inventor： Chao-Hsing HUANG ,  Yu-Chung CHIN ,  Min-Nan TSENG ,  Kai-Yu CHEN

    IPC: H01L29/737 ,  H01L29/205

    CPC classification number: H01L29/7371 ,  H01L29/205 ,  H01L29/2003

    Abstract: Provided is a heterojunction bipolar transistor (HBT), including a collector layer. The collector layer includes a bandgap graded layer. A quasi-electric field generated by the bandgap graded layer will enable electrons in the bandgap graded layer to be accelerated. The bandgap graded layer includes a semiconductor material in which an electron velocity peaks at a certain quasi-electric field strength when an quasi-electric field strength is varied, wherein the certain quasi-electric field strength is referred to as a peak electric field strength. The strength of the quasi-electric field is more than 2 times the peak electric field strength.

    SEMICONDUCTOR EPITAXIAL WAFER
    13.
    发明申请
    SEMICONDUCTOR EPITAXIAL WAFER 有权

    公开(公告)号：US20220328645A1

    公开(公告)日：2022-10-13

    申请号：US17715140

    申请日：2022-04-07

    Applicant: VISUAL PHOTONICS EPITAXY CO., LTD.

    Inventor： Chao-Hsing Huang ,  Yu-Chung Chin ,  Van-Truong Dai

    IPC: H01L29/45 ,  H01L29/737 ,  H01L31/103 ,  H01L27/144 ,  H01S5/042 ,  H01S5/02

    Abstract: Provided is a semiconductor epitaxial wafer, including a substrate, a first epitaxial structure, a first ohmic contact layer and a second epitaxial stack structure. It is characterized in that the ohmic contact layer includes a compound with low nitrogen content, and the ohmic contact layer does not induce significant stress during the crystal growth process. Accordingly, the second epitaxial stack structure formed on the ohmic contact layer can have good epitaxial quality, thereby providing a high-quality semiconductor epitaxial wafer for fabricating a GaAs integrated circuit or a InP integrated circuit. At the same time, the ohmic contact properties of ohmic contact layers are not affected, and the reactants generated during each dry etching process are reduced.

    Heterojunction bipolar transistor structure with a bandgap graded hole barrier layer
    15.
    发明授权
    Heterojunction bipolar transistor structure with a bandgap graded hole barrier layer 有权

    公开(公告)号：US10818781B2

    公开(公告)日：2020-10-27

    申请号：US16796018

    申请日：2020-02-20

    Applicant: VISUAL PHOTONICS EPITAXY CO., LTD.

    Inventor： Chao-Hsing Huang ,  Yu-Chung Chin ,  Min-Nan Tseng ,  Kai-Yu Chen

    IPC: H01L29/737 ,  H01L29/08 ,  H01L29/205 ,  H01L29/10

    Abstract: Provided is a heterojunction bipolar transistor (HBT) structure with a bandgap graded hole barrier layer, including: a sub-collector layer including an N-type group III-V semiconductor on a substrate, a collector layer on the sub-collector layer and including a group III-V semiconductor, a hole barrier layer on the collector layer, a base layer on the hole barrier layer and including a P-type group III-V semiconductor, an emitter layer on the base layer and including an N-type group III-V semiconductor, an emitter cap layer on the emitter layer and including an N-type group III-V semiconductor, and an ohmic contact layer on the emitter cap layer and including an N-type group III-V semiconductor. Bandgaps of the hole barrier layer at least include a gradually increasing bandgap from the base layer towards the collector layer and a largest bandgap of the hole barrier layer is greater than bandgap of the base layer.

    HETEROJUNCTION BIPOLAR TRANSISTOR STRUCTURE WITH A BANDGAP GRADED HOLE BARRIER LAYER
    16.
    发明申请
    HETEROJUNCTION BIPOLAR TRANSISTOR STRUCTURE WITH A BANDGAP GRADED HOLE BARRIER LAYER 审中-公开

    公开(公告)号：US20190115458A1

    公开(公告)日：2019-04-18

    申请号：US16161185

    申请日：2018-10-16

    Applicant: VISUAL PHOTONICS EPITAXY CO., LTD.

    Inventor： Yu-Chung Chin ,  Chao-Hsing Huang ,  Min-Nan Tseng ,  Kai-Yu Chen

    IPC: H01L29/737 ,  H01L29/10 ,  H01L29/08 ,  H01L29/205

    Abstract: The disclosure provides an HBT structure with bandgap graded hole barrier layer, comprising: a sub-collector layer, a collector layer, a hole barrier layer, a base layer, an emitter layer, an emitter cap layer, and an ohmic contact layer, all stacked sequentially on a substrate; with the hole barrier layer formed of at least one of AlGaAs, AlGaAsN, AlGaAsP, AlGaAsSb, and InAlGaAs, Aluminum composition being less than 22%, and In, N, P, and Sb compositions being respectively less than or equal to 10%; wherein bandgaps of the hole barrier layer at least comprising a gradually increasing bandgap from the base layer towards the collector layer and the largest bandgap of the hole barrier layer being greater than bandgaps of the base layer and the collector layer. The present invention can effectively enhance the overall device performance.

    DIRECTED EPITAXIAL HETEROJUNCTION BIPOLAR TRANSISTOR
    17.
    发明申请
    DIRECTED EPITAXIAL HETEROJUNCTION BIPOLAR TRANSISTOR 有权
    方向外延双极双极晶体管

    公开(公告)号：US20150255585A1

    公开(公告)日：2015-09-10

    申请号：US14535431

    申请日：2014-11-07

    Applicant: VISUAL PHOTONICS EPITAXY CO., LTD.

    Inventor： Yu-Chung Chin ,  Chao-Hsing Huang ,  Min-Nan Tseng

    IPC: H01L29/737 ,  H01L27/07 ,  H01L29/205

    CPC classification number: H01L29/7378 ,  H01L21/8252 ,  H01L27/0623 ,  H01L27/0705 ,  H01L27/0716 ,  H01L29/0821 ,  H01L29/201 ,  H01L29/205

    Abstract: A directed epitaxial heterojunction bipolar transistor (HBT) structure is directly or indirectly formed on a GaAs substrate that is formed by a (100) face towards a (111)B face with an angle of inclination between 0.6° and 25°, and includes a sub-collector layer, a collector, a base layer, an emitter layer, an emitter cap layer and an ohmic contact layer, which are sequentially formed on the substrate. A tunnel collector layer formed by InGaP or InGaAsP is provided between the collector layer and the base layer. Since an epitaxial process is performed on the substrate from a (100) face towards a (111)B face with an angle of inclination between 0.6° and 25°, indium and gallium contained in InGaP or InGaAsP are affected by the ordering effect such that InGaP or InGaAsP used in the emitter layer and/or the tunnel collector layer has a higher electron affinity or a smaller bandgap.

    Abstract translation: 定向外延异质结双极晶体管（HBT）结构直接或间接地形成在由（100）面朝向（111）B面形成的GaAs衬底上，倾斜角为0.6°至25°，并且包括 副集电极层，集电极，基极层，发射极层，发射极覆盖层和欧姆接触层。 由InGaP或InGaAsP形成的隧道集电极层设置在集电极层和基极层之间。 由于在（100）面朝向（111）B面的衬底上进行外延处理，倾斜角为0.6°至25°，InGaP或InGaAsP中所含的铟和镓受排序效应影响，使得 在发射极层和/或隧道集电极层中使用的InGaP或InGaAsP具有更高的电子亲和力或更小的带隙。

    BiHEMT device having a stacked separating layer
    18.
    发明授权
    BiHEMT device having a stacked separating layer 有权
    BiHEMT器件具有堆叠分离层

    公开(公告)号：US08994069B2

    公开(公告)日：2015-03-31

    申请号：US13910241

    申请日：2013-06-05

    Applicant: Visual Photonics Epitaxy Co., Ltd.

    Inventor： Yu-Chung Chin ,  Chao-Hsing Huang

    IPC: H01L21/02 ,  H01L29/20 ,  H01L29/66 ,  H01L29/778 ,  H01L29/737 ,  H01L29/08 ,  H01L29/205

    CPC classification number: H01L29/778 ,  H01L29/0821 ,  H01L29/20 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/7371 ,  H01L29/7378 ,  H01L29/7785

    Abstract: A high electron mobility bipolar transistor including a substrate, a pseudomorphic high electron mobility transistor (pHEMT) sub structure, a sub collector/separating layer and a heterojunction bipolar transistor (HBT) sub structure sequentially stacked from bottom to top is disclosed. The sub collector/separating layer and the pHEMT sub structure are combined to form a pHEMT, and the sub collector/separating layer and the HBT sub structure are combined to form an HBT. The carbon concentration in the sub collector/separating layer is within 5×1017 cm−3 and 1×1020 cm−3, and/or the oxygen concentration within 5×1018 cm−3 and 1×1020 cm−3. The lattice during the process of epitaxy growth is stabilized and it is possible to prevent the dopants, the elements, the vacancies or the defects from diffusing into the neighboring layers, thereby improving the problem of mobility degradation and resistance increase, and sustaining the stability of the manufacturing process.

    Abstract translation: 公开了一种高电子迁移率双极晶体管，其包括从底部到顶部顺序层叠的基板，伪晶体高电子迁移率晶体管（pHEMT）子结构，子集电极/分离层和异质结双极晶体管（HBT）子结构。 将亚集电极/分离层和pHEMT子结构组合形成pHEMT，并将亚集电极/分离层和HBT子结构组合形成HBT。 子集电极/分离层中的碳浓度在5×1017cm-3和1×1020cm-3之间，和/或氧浓度在5×1018cm-3和1×1020cm-3之间。 在外延生长过程中的晶格是稳定的，并且可以防止掺杂剂，元素，空位或缺陷扩散到相邻层中，从而改善迁移率降低和电阻增加的问题，并且保持稳定性 制造过程。

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