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公开(公告)号：US20210091537A1
公开(公告)日：2021-03-25
申请号：US17029177
申请日：2020-09-23
Applicant: VISUAL PHOTONICS EPITAXY CO., LTD.
Inventor： Chao-Hsing Huang , Yu-Chung Chin , Van-Truong Dai
IPC: H01S5/183
Abstract: Provided is a high-power vertical cavity surface emitting laser diode (VCSEL), including a first epitaxial region, an active region and a second epitaxial region. One of the first epitaxial region and the second epitaxial region is an N-type epitaxial region, and the other of the first epitaxial region and the second epitaxial region includes a PN junction. The PN junction includes a P-type epitaxial layer, a tunnel junction and an N-type epitaxial layer. The tunnel junction is located between the P-type epitaxial layer and the N-type epitaxial layer, and the P-type epitaxial layer of the PN junction is closest to the active region.
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2.发明授权公开(公告)号：US11721954B2
公开(公告)日：2023-08-08
申请号：US16931541
申请日：2020-07-17
Applicant: VISUAL PHOTONICS EPITAXY CO., LTD.
Inventor： Chao-Hsing Huang , Yu-Chung Chin , Van-Truong Dai
CPC classification number: H01S5/3403 , H01S5/18361
Abstract: Provided is a vertical cavity surface emitting laser diode (VCSEL) with low compressive strain DBR layer, including a GaAs substrate, a lower DBR layer, a lower spacer layer, an active region, an upper spacer layer and an upper DBR layer. The lower or the upper DBR layer includes multiple low refractive index layers and multiple high refractive index layers. The lower DBR layer, the lower spacer layer, the upper spacer layer or the upper DBR layer contains AlxGa1-xAs1-yPy, where the lattice constant of AlxGa1-xAs1-yPy is greater than that of the GaAs substrate. This can moderately reduce excessive compressive strain due to lattice mismatch or avoid tensile strain during the epitaxial growth, thereby reducing the chance of deformation and bowing of the VCSEL epitaxial wafer or cracking during manufacturing. Additionally, the VCSEL epitaxial layer can be prevented from generating excessive compressive strain or tensile strain during the epitaxial growth.
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公开(公告)号：US20210104872A1
公开(公告)日：2021-04-08
申请号：US17060287
申请日：2020-10-01
Applicant: VISUAL PHOTONICS EPITAXY CO., LTD.
Inventor： Chao-Hsing Huang , Yu-Chung Chin , Van-Truong Dai
Abstract: Provided is a vertical cavity surface emitting laser diode (VCSEL). A tunnel junction with a high doping concentration is provided in the VCSEL. An n-type semiconductor layer of the tunnel junction has stress relative to the substrate, and is doped with at least one element such that the tunnel junction not only has a high doping concentration, but also the epitaxial layer can be oxidized and the oxidation rate is relatively stable during the oxidation process. Alternatively, the n-type semiconductor layer is doped with at least two elements. As a result, the oxidation process of the VCSEL can be stably performed, and the resistance of the tunnel junction with a high doping concentration is low. The tunnel junction is suitable to be arranged between two active layers of the VCSEL or between the p-type semiconductor and the n-type semiconductor layer of the VCSEL.
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公开(公告)号：US11799011B2
公开(公告)日：2023-10-24
申请号：US17715140
申请日：2022-04-07
Applicant: VISUAL PHOTONICS EPITAXY CO., LTD.
Inventor： Chao-Hsing Huang , Yu-Chung Chin , Van-Truong Dai
IPC: H01L29/45 , H01L29/737 , H01L31/103 , H01S5/042 , H01S5/02 , H01L27/144 , H01S5/183
CPC classification number: H01L29/452 , H01L27/1443 , H01L29/7371 , H01L31/1035 , H01S5/0206 , H01S5/04256 , H01S5/183
Abstract: Provided is a semiconductor epitaxial wafer, including a substrate, a first epitaxial structure, a first ohmic contact layer and a second epitaxial stack structure. It is characterized in that the ohmic contact layer includes a compound with low nitrogen content, and the ohmic contact layer does not induce significant stress during the crystal growth process. Accordingly, the second epitaxial stack structure formed on the ohmic contact layer can have good epitaxial quality, thereby providing a high-quality semiconductor epitaxial wafer for fabricating a GaAs integrated circuit or a InP integrated circuit. At the same time, the ohmic contact properties of ohmic contact layers are not affected, and the reactants generated during each dry etching process are reduced.
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公开(公告)号：US20220328645A1
公开(公告)日：2022-10-13
申请号：US17715140
申请日：2022-04-07
Applicant: VISUAL PHOTONICS EPITAXY CO., LTD.
Inventor： Chao-Hsing Huang , Yu-Chung Chin , Van-Truong Dai
IPC: H01L29/45 , H01L29/737 , H01L31/103 , H01L27/144 , H01S5/042 , H01S5/02
Abstract: Provided is a semiconductor epitaxial wafer, including a substrate, a first epitaxial structure, a first ohmic contact layer and a second epitaxial stack structure. It is characterized in that the ohmic contact layer includes a compound with low nitrogen content, and the ohmic contact layer does not induce significant stress during the crystal growth process. Accordingly, the second epitaxial stack structure formed on the ohmic contact layer can have good epitaxial quality, thereby providing a high-quality semiconductor epitaxial wafer for fabricating a GaAs integrated circuit or a InP integrated circuit. At the same time, the ohmic contact properties of ohmic contact layers are not affected, and the reactants generated during each dry etching process are reduced.
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Patent Agency Ranking
公开(公告)号：US11862938B2
公开(公告)日：2024-01-02
申请号：US16898612
申请日：2020-06-11
Applicant: VISUAL PHOTONICS EPITAXY CO., LTD.
Inventor： Chao-Hsing Huang , Yu-Chung Chin , Van-Truong Dai , Jhao-Hang He , Hung-Chi Hsiao
CPC classification number: H01S5/3407 , H01S5/18311 , H01S5/2004 , H01S5/3095 , H01S5/343 , H01S5/3406 , H01S5/3412 , H01S5/3434 , H01S5/34353 , H01S5/3436 , H01S5/34346 , H01S5/34373
Abstract: Provided is a semiconductor laser diode, including a GaAs/In P substrate and a multi-layer structure on the GaAs/InP substrate. The multi-layer structure includes a lower epitaxial region, an active region and an upper epitaxial region. The active region comprises a first active layer, an epitaxial region and a second active layer, the epitaxial region is disposed between the first active layer and the second active layer, the first active layer comprises one or more quantum well structures or one or more quantum dot structures, and the second active layer comprises one or more quantum well structures or one or more quantum dot structures. the epitaxial region further comprises a tunnel junction and at least one carrier confinement layer, at least one carrier confinement layer is disposed between the tunnel junction and the first active layer or between the tunnel junction and the second active layer such that the at least one carrier confinement layer blocks electrons or holes, and no electrons or holes are able to reach the tunnel junction.
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公开(公告)号：US11158995B2
公开(公告)日：2021-10-26
申请号：US16424569
申请日：2019-05-29
Applicant: VISUAL PHOTONICS EPITAXY CO., LTD.
Inventor： Yu-Chung Chin , Chao-Hsing Huang , Van-Truong Dai
Abstract: A laser diode is provided, including at least a defect blocking layer deposited between the GaAs substrate and the active layer, so that the crystal defects of the GaAs substrate can be blocked or reduced from propagation to the active layer when the epitaxial layer is formed on the GaAs substrate. As such, the crystal quality of the active layer can be improved, thereby improving the reliability and optical property of the laser diode.
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8.发明申请公开(公告)号：US20210021104A1
公开(公告)日：2021-01-21
申请号：US16931541
申请日：2020-07-17
Applicant: VISUAL PHOTONICS EPITAXY CO., LTD.
Inventor： Chao-Hsing Huang , Yu-Chung Chin , Van-Truong Dai
Abstract: Provided is a vertical cavity surface emitting laser diode (VCSEL) with low compressive strain DBR layer, including a GaAs substrate, a lower DBR layer, a lower spacer layer, an active region, an upper spacer layer and an upper DBR layer. The lower or the upper DBR layer includes multiple low refractive index layers and multiple high refractive index layers. The lower DBR layer, the lower spacer layer, the upper spacer layer or the upper DBR layer contains AlxGa1-xAs1-yPy, where the lattice constant of AlxGa1-xAs1-yPy is greater than that of the GaAs substrate. This can moderately reduce excessive compressive strain due to lattice mismatch or avoid tensile strain during the epitaxial growth, thereby reducing the chance of deformation and bowing of the VCSEL epitaxial wafer or cracking during manufacturing. Additionally, the VCSEL epitaxial layer can be prevented from generating excessive compressive strain or tensile strain during the epitaxial growth.
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公开(公告)号：US20250055257A1
公开(公告)日：2025-02-13
申请号：US18928666
申请日：2024-10-28
Applicant: VISUAL PHOTONICS EPITAXY CO., LTD.
Inventor： Van-Truong Dai , Van-Chien Nguyen , Yu-Chung Chin , Chao-Hsing Huang
Abstract: A vertical cavity surface emitting laser diode (VCSEL) includes a substrate, a lower Bragg reflector (DBR) layer, an active region, an upper Bragg reflector (DBR) layer, and a current confinement layer. The lower DBR layer is on the substrate. The active region is on the lower DBR layer on the active region. The current confinement layer is inside or outside the active region. When the current confinement layer comprises a compound containing phosphorus, such as AlAsP or AlGaAsP, and the phosphorus (P) content is within a specific range, the insulation rate of the current confinement layer will not be excessively fast to the point of being difficult to control. Additionally, the reproducibility of the aperture in the current confinement layer between batches of the VCSEL production is improved. Furthermore, the divergence angle of the VCSEL can be further reduced, thereby significantly enhancing the sensing capabilities of Lidar or 3D sensing.
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公开(公告)号：US11482830B2
公开(公告)日：2022-10-25
申请号：US17013965
申请日：2020-09-08
Applicant: VISUAL PHOTONICS EPITAXY CO., LTD.
Inventor： Chao-Hsing Huang , Yu-Chung Chin , Van-Truong Dai
Abstract: A measurement method for a vertical cavity surface emitting laser diode (VCSEL) and an epitaxial wafer test fixture are provided, especially the Fabry-Perot Etalon of the bottom-emitting VCSEL can be measured. When the Fabry-Perot Etalon of the bottom-emitting VCSEL is measured by a measurement apparatus, a light of the test light source of the measurement apparatus is incident from the substrate surface of the VCSEL epitaxial wafer such that the Fabry-Perot Etalon of the bottom-emitting VCSEL is acquired. Through the VCSEL epitaxial wafer test fixture, the bottom-emitting VCSEL can be directly measured by the existing measurement apparatus such that there is no need to change the optical design of the measurement apparatus, and it can prevent the VCSEL epitaxial wafer from being scratched or contaminated.
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