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    High ruggedness heterojunction bipolar transistor structure
    1.
    发明授权
    High ruggedness heterojunction bipolar transistor structure 有权

    公开(公告)号：US11049936B2

    公开(公告)日：2021-06-29

    申请号：US16292365

    申请日：2019-03-05

    Applicant: VISUAL PHOTONICS EPITAXY CO., LTD.

    Inventor： Yu-Chung Chin ,  Chao-Hsing Huang ,  Min-Nan Tseng ,  Kai-Yu Chen

    IPC: H01L33/00 ,  H01L21/00 ,  H01L29/08 ,  H01L29/205 ,  H01L29/737 ,  H01L27/082 ,  H01L29/732

    Abstract: The disclosure provides a high ruggedness HBT structure, including: a sub-collector layer on a substrate and formed of an N-type III-V semiconductor material; a collector layer on the sub-collector layer and formed of a III-V semiconductor material; a base layer on the collector layer and formed of a P-type III-V semiconductor material; an emitter layer on the base layer and formed of one of N-type semiconductor materials of InGaP, InGaAsP and InAlGaP; a first emitter cap layer on the emitter layer and formed of one of undoped or N-type semiconductor materials of AlxGa1-xAs, AlxGa1-xAs1-yNy, AlxGa1-xAs1-zPz, AlxGa1-xAs1-wSbw, and InrAlxGa1-x-rAs, x having a highest value between 0.05≤x≤0.4, and y, z, r, w≤0.1; a second emitter cap layer on the first emitter cap layer and formed of an N-type III-V semiconductor material; and an ohmic contact layer on the second emitter cap layer and formed of an N-type III-V semiconductor material.

    HIGH RUGGEDNESS HETEROJUNCTION BIPOLAR TRANSISTOR STRUCTURE
    4.
    发明申请
    HIGH RUGGEDNESS HETEROJUNCTION BIPOLAR TRANSISTOR STRUCTURE 审中-公开

    公开(公告)号：US20200161421A1

    公开(公告)日：2020-05-21

    申请号：US16292365

    申请日：2019-03-05

    Applicant: VISUAL PHOTONICS EPITAXY CO., LTD.

    Inventor： Yu-Chung Chin ,  Chao-Hsing Huang ,  Min-Nan Tseng ,  Kai-Yu Chen

    IPC: H01L29/08 ,  H01L33/00 ,  H01L29/737 ,  H01L29/205

    Abstract: The disclosure provides a high ruggedness HBT structure, including: a sub-collector layer on a substrate and formed of an N-type III-V semiconductor material; a collector layer on the sub-collector layer and formed of a III-V semiconductor material; a base layer on the collector layer and formed of a P-type III-V semiconductor material; an emitter layer on the base layer and formed of one of N-type semiconductor materials of InGaP, InGaAsP and InAlGaP; a first emitter cap layer on the emitter layer and formed of one of undoped or N-type semiconductor materials of AlxGa1-xAs, AlxGa1-xAs1-yNy, AlxGa1-xAs1-zPz, AlxGa1-xAs1-wSbw, and InrAlxGa1-x-rAs, x having a highest value between 0.05≤x≤0.4, and y, z, r, w≤0.1; a second emitter cap layer on the first emitter cap layer and formed of an N-type III-V semiconductor material; and an ohmic contact layer on the second emitter cap layer and formed of an N-type III-V semiconductor material.

    Heterojunction bipolar transistor structure with a bandgap graded hole barrier layer
    7.
    发明授权
    Heterojunction bipolar transistor structure with a bandgap graded hole barrier layer 有权

    公开(公告)号：US10818781B2

    公开(公告)日：2020-10-27

    申请号：US16796018

    申请日：2020-02-20

    Applicant: VISUAL PHOTONICS EPITAXY CO., LTD.

    Inventor： Chao-Hsing Huang ,  Yu-Chung Chin ,  Min-Nan Tseng ,  Kai-Yu Chen

    IPC: H01L29/737 ,  H01L29/08 ,  H01L29/205 ,  H01L29/10

    Abstract: Provided is a heterojunction bipolar transistor (HBT) structure with a bandgap graded hole barrier layer, including: a sub-collector layer including an N-type group III-V semiconductor on a substrate, a collector layer on the sub-collector layer and including a group III-V semiconductor, a hole barrier layer on the collector layer, a base layer on the hole barrier layer and including a P-type group III-V semiconductor, an emitter layer on the base layer and including an N-type group III-V semiconductor, an emitter cap layer on the emitter layer and including an N-type group III-V semiconductor, and an ohmic contact layer on the emitter cap layer and including an N-type group III-V semiconductor. Bandgaps of the hole barrier layer at least include a gradually increasing bandgap from the base layer towards the collector layer and a largest bandgap of the hole barrier layer is greater than bandgap of the base layer.

    HETEROJUNCTION BIPOLAR TRANSISTOR STRUCTURE WITH A BANDGAP GRADED HOLE BARRIER LAYER
    8.
    发明申请
    HETEROJUNCTION BIPOLAR TRANSISTOR STRUCTURE WITH A BANDGAP GRADED HOLE BARRIER LAYER 审中-公开

    公开(公告)号：US20190115458A1

    公开(公告)日：2019-04-18

    申请号：US16161185

    申请日：2018-10-16

    Applicant: VISUAL PHOTONICS EPITAXY CO., LTD.

    Inventor： Yu-Chung Chin ,  Chao-Hsing Huang ,  Min-Nan Tseng ,  Kai-Yu Chen

    IPC: H01L29/737 ,  H01L29/10 ,  H01L29/08 ,  H01L29/205

    Abstract: The disclosure provides an HBT structure with bandgap graded hole barrier layer, comprising: a sub-collector layer, a collector layer, a hole barrier layer, a base layer, an emitter layer, an emitter cap layer, and an ohmic contact layer, all stacked sequentially on a substrate; with the hole barrier layer formed of at least one of AlGaAs, AlGaAsN, AlGaAsP, AlGaAsSb, and InAlGaAs, Aluminum composition being less than 22%, and In, N, P, and Sb compositions being respectively less than or equal to 10%; wherein bandgaps of the hole barrier layer at least comprising a gradually increasing bandgap from the base layer towards the collector layer and the largest bandgap of the hole barrier layer being greater than bandgaps of the base layer and the collector layer. The present invention can effectively enhance the overall device performance.

    DIRECTED EPITAXIAL HETEROJUNCTION BIPOLAR TRANSISTOR
    9.
    发明申请
    DIRECTED EPITAXIAL HETEROJUNCTION BIPOLAR TRANSISTOR 有权
    方向外延双极双极晶体管

    公开(公告)号：US20150255585A1

    公开(公告)日：2015-09-10

    申请号：US14535431

    申请日：2014-11-07

    Applicant: VISUAL PHOTONICS EPITAXY CO., LTD.

    Inventor： Yu-Chung Chin ,  Chao-Hsing Huang ,  Min-Nan Tseng

    IPC: H01L29/737 ,  H01L27/07 ,  H01L29/205

    CPC classification number: H01L29/7378 ,  H01L21/8252 ,  H01L27/0623 ,  H01L27/0705 ,  H01L27/0716 ,  H01L29/0821 ,  H01L29/201 ,  H01L29/205

    Abstract: A directed epitaxial heterojunction bipolar transistor (HBT) structure is directly or indirectly formed on a GaAs substrate that is formed by a (100) face towards a (111)B face with an angle of inclination between 0.6° and 25°, and includes a sub-collector layer, a collector, a base layer, an emitter layer, an emitter cap layer and an ohmic contact layer, which are sequentially formed on the substrate. A tunnel collector layer formed by InGaP or InGaAsP is provided between the collector layer and the base layer. Since an epitaxial process is performed on the substrate from a (100) face towards a (111)B face with an angle of inclination between 0.6° and 25°, indium and gallium contained in InGaP or InGaAsP are affected by the ordering effect such that InGaP or InGaAsP used in the emitter layer and/or the tunnel collector layer has a higher electron affinity or a smaller bandgap.

    Abstract translation: 定向外延异质结双极晶体管（HBT）结构直接或间接地形成在由（100）面朝向（111）B面形成的GaAs衬底上，倾斜角为0.6°至25°，并且包括 副集电极层，集电极，基极层，发射极层，发射极覆盖层和欧姆接触层。 由InGaP或InGaAsP形成的隧道集电极层设置在集电极层和基极层之间。 由于在（100）面朝向（111）B面的衬底上进行外延处理，倾斜角为0.6°至25°，InGaP或InGaAsP中所含的铟和镓受排序效应影响，使得 在发射极层和/或隧道集电极层中使用的InGaP或InGaAsP具有更高的电子亲和力或更小的带隙。

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