公开(公告)号：US06410377B1

公开(公告)日：2002-06-25

申请号：US09707128

申请日：2000-11-06

申请人： Ching-Chun Hwang ,  Sheng-Hsiung Yang

发明人： Ching-Chun Hwang ,  Sheng-Hsiung Yang

IPC分类号： H01L218238

CPC分类号： H01L21/761 ,  H01L21/823878 ,  H01L21/823892 ,  H01L27/0922

摘要： The present invention provides a method for integrating the fabrication of a sensor and a high voltage devices. The N conductive type sensor has a P conductive type doped region in the substrate of the sensor active region to effectively reduce the leakage at edges of the field oxide. Furthermore, there are the P conductive type field and the P conductive type well used as isolations for the sensor and these isolations can prevent blooming. Between these isolations, high voltage devices can be simultaneously formed thereon.

摘要翻译： 本发明提供了一种用于集成传感器和高电压装置的制造的方法。 N导电型传感器在传感器有源区的衬底中具有P导电型掺杂区域，以有效地减少场氧化物边缘的泄漏。 此外，有P导电型场和P导电类型良好地用作传感器的隔离，并且这些隔离可以防止起霜。 在这些隔离之间，可以在其上同时形成高电压装置。

公开(公告)号：US06306700B1

公开(公告)日：2001-10-23

申请号：US09633468

申请日：2000-08-07

申请人： Sheng-Hsiung Yang

发明人： Sheng-Hsiung Yang

IPC分类号： H01L2138

CPC分类号： H01L21/823892 ,  H01L21/823814 ,  H01L21/823857

摘要： A method for forming high voltage devices compatible with low voltage devices on a semiconductor substrate is provided. A substrate is provided. An oxide layer is formed on the substrate. An N well is formed in the substrate. A P well is formed opposite to the N well in the substrate. A plurality of N-field regions are formed as drift regions in the P well and as isolation regions in the N well. A plurality of P-field regions are formed as drift regions in the N well and as isolation regions in the P well region. A plurality of field oxide regions are formed on the N well and the P well in the substrate. N− type doped regions are formed in the P well through an N-grade implantation, prior to a gate oxide layer and a polysilicon layer formation. An N+ type doped region in the N−type doped region is formed as a source/drain region for an NMOS transistor in the P well. A P+ type doped region is formed as a source/drain region for a PMOS transistor in the N well. The polysilicon layer is formed and defined as a gate on the gate oxide layer across a channel for the NMOS/PMOS transistor and a portion of the field oxide region adjoining thereto.

摘要翻译： 提供了一种用于形成与半导体衬底上的低电压器件兼容的高电压器件的方法。 提供基板。 在基板上形成氧化层。 在衬底中形成N阱。 P阱与衬底中的N阱相对地形成。 在P阱中形成多个N场区域作为漂移区域，并在N阱中形成隔离区域。 多个P场区域形成为N阱中的漂移区域和P阱区域中的隔离区域。 在衬底中的N阱和P阱上形成多个场氧化物区域。 在栅极氧化层和多晶硅层形成之前，通过N级注入在P阱中形成N型掺杂区。 形成N型掺杂区域中的N +型掺杂区域作为P阱中的NMOS晶体管的源极/漏极区域。 形成P +型掺杂区域作为N阱中的PMOS晶体管的源极/漏极区域。 在NMOS / PMOS晶体管的沟道和与其相邻的场氧化物区域的一部分上形成并定义为栅极氧化层上的栅极和多晶硅层。

公开(公告)号：US08164471B2

公开(公告)日：2012-04-24

申请号：US12479829

申请日：2009-06-07

申请人： Sheng-Hsiung Yang

发明人： Sheng-Hsiung Yang

IPC分类号： G08B21/00

CPC分类号： G01P15/16 ,  G01P3/50 ,  G11B19/043

摘要： A system and method for detecting a falling state of an electronic device include setting a time interval to collect position information of the electronic device and one or more alarm means, activating a global position system to locate a position of the electronic device, and acquiring position information of the electronic device at each time interval. The system and method further include calculating an acceleration of the electronic device, and activating one or more of the alarm means if the calculated acceleration is larger or equal to the acceleration of gravity.

摘要翻译： 用于检测电子设备的下降状态的系统和方法包括设置收集电子设备的位置信息的时间间隔和一个或多个报警装置，激活全局位置系统以定位电子设备的位置，以及获取位置 每个时间间隔的电子设备的信息。 该系统和方法还包括计算电子设备的加速度，并且如果所计算的加速度大于或等于重力加速度，则激活报警装置中的一个或多个。

公开(公告)号：US20100148974A1

公开(公告)日：2010-06-17

申请号：US12555054

申请日：2009-09-08

申请人： SHENG-HSIUNG YANG

发明人： SHENG-HSIUNG YANG

IPC分类号： G08B17/10

CPC分类号： G08B17/10 ,  G08B17/125 ,  G08B25/08

摘要： A portable electronic device includes an image capturing unit, a processor unit connected to the image capturing unit, and an alarm unit connected to the processor unit. The image capturing unit captures outside images, the processor unit detects if there is any smoke near the portable electronic device according to the images and measuring relative parameters of detected smoke, and the alarm unit alarms when at least one parameter of detected smoke is out of predetermined acceptable ranges.

摘要翻译： 便携式电子设备包括图像捕获单元，连接到图像捕获单元的处理器单元和连接到处理器单元的报警单元。 图像捕获单元捕获外部图像，处理器单元根据图像检测便携式电子设备附近是否有烟雾，并测量检测到的烟雾的相对参数，并且当检测到的烟雾的至少一个参数超出 预定的可接受范围。

公开(公告)号：US20100056207A1

公开(公告)日：2010-03-04

申请号：US12489438

申请日：2009-06-23

申请人： SHENG-HSIUNG YANG

发明人： SHENG-HSIUNG YANG

IPC分类号： H04M1/00

CPC分类号： H04B17/23

摘要： A mobile phone for preventing a hidden device from secretly taking a photograph or video. The mobile phone includes a signal detecting unit, a processor, an alarm activating system, and an alarm unit. The alarm activating system is operable to output an alarm when a user of the mobile phone is in a danger state of being taken a photograph or video by a hidden device, by providing a parameter setting function, a signal detecting function, a data analyzing function, and an alarm sending function.

摘要翻译： 用于防止隐藏的设备秘密拍摄照片或视频的手机。 手机包括信号检测单元，处理器，报警启动系统和报警单元。 当通过提供参数设置功能，信号检测功能，数据分析功能，手机的用户处于拍摄照片或隐藏设备的危险状态时，报警激活系统可操作地输出警报 和报警发送功能。

公开(公告)号：US20090307872A1

公开(公告)日：2009-12-17

申请号：US12137062

申请日：2008-06-11

申请人： Sheng-Hsiung YANG ,  Mu-Kun HSUEH

发明人： Sheng-Hsiung YANG ,  Mu-Kun HSUEH

IPC分类号： E05D5/14

CPC分类号： G06F1/1681 ,  E05D11/082 ,  E05Y2900/606 ,  G06F1/1616 ,  H04M1/0216 ,  Y10T16/5369

摘要： A pivot structure is used to pivotally connect a first object to a second object includes a pivot hole and a pivot portion. The pivot hole is disposed at the second object, while the pivot portion is disposed at the first object. The pivot portion has a discontinuous ring with an outside diameter lager than an aperture of the pivot hole. The discontinuous ring can be squeezed to be deformed and be inserted into the pivot hole, such that the discontinuous ring tightly bears against the pivot hole to maintain an included angle between the first object and the second object at any time, thereby a user can steplessly adjust the included angle of the two objects.

摘要翻译： 枢转结构用于将第一物体枢转地连接到第二物体，包括枢轴孔和枢轴部分。 枢轴孔设置在第二物体处，而枢轴部分设置在第一物体处。 枢轴部分具有一个具有比该枢转孔的孔径大的外径的不连续环。 不连续环可以被挤压变形并插入到枢轴孔中，使得不连续的环紧紧地靠在枢轴孔上，以在任何时间保持第一物体和第二物体之间的夹角，由此使用者可以无级地 调整两个物体的夹角。

公开(公告)号：US20070115194A1

公开(公告)日：2007-05-24

申请号：US11600883

申请日：2006-11-17

申请人： Jia-Jiu Song ,  Sheng-Hsiung Yang ,  Jr-Ren Jeng ,  Mu-Kun Hsueh

发明人： Jia-Jiu Song ,  Sheng-Hsiung Yang ,  Jr-Ren Jeng ,  Mu-Kun Hsueh

IPC分类号： H01Q13/00

CPC分类号： H01Q9/28 ,  H01Q9/40

摘要： An antenna structure including a ground plate, a hollow bolt, and a conductive conical dome is provided. The hollow bolt passes through the ground plate, and a signal wire is laid in the hollow bolt. An insulator is disposed between the signal wire and the hollow bolt for providing electrical isolation therebetween. The conductive conical dome is connected with one end of the signal wire. The hollow bolt and a nut are provided to fix the antenna on a wall or a ceiling. Since the signal wire is laid in the hollow bolt, the signal wire can be connected to a signal source only by connecting a signal cable to the hollow bolt.

摘要翻译： 提供了包括接地板，中空螺栓和导电圆锥形的天线结构。 中空螺栓穿过接地板，信号线铺设在中空螺栓中。 绝缘体设置在信号线和中空螺栓之间，用于在它们之间提供电隔离。 导电锥形圆顶与信号线的一端连接。 提供中空螺栓和螺母以将天线固定在墙壁或天花板上。 由于信号线铺设在中空螺栓中，信号线只能通过将信号线连接到中空螺栓而连接到信号源。

公开(公告)号：US20060017114A1

公开(公告)日：2006-01-26

申请号：US10710616

申请日：2004-07-25

申请人： Jung-Ching Chen ,  Jy-Hwang Lin ,  Sheng-Hsiung Yang ,  Jim SU

发明人： Jung-Ching Chen ,  Jy-Hwang Lin ,  Sheng-Hsiung Yang ,  Jim SU

IPC分类号： H01L29/78 ,  H01L21/8238

CPC分类号： H01L29/1083 ,  H01L21/2652 ,  H01L21/823814 ,  H01L21/823857 ,  H01L21/823878 ,  H01L21/823892 ,  H01L29/7833

摘要： A high-voltage semiconductor MOS process that is fully compatible with low-voltage MOS process is provided. The high-voltage N/P well are implanted into the substrate prior to the definition of active areas. The channel stop doping regions are formed after the formation of field oxide layers, thus avoiding lateral diffusion of the channel stop doping regions. In addition, the grade drive-in process used to activate the grade doping regions in the high-voltage device area and the gate oxide growth of the high-voltage devices are performed simultaneously.

摘要翻译： 提供了与低压MOS工艺完全兼容的高压半导体MOS工艺。 在定义有源区之前，将高压N / P阱注入到衬底中。 在形成场氧化物层之后形成通道停止掺杂区域，从而避免沟道停止掺杂区域的横向扩散。 此外，用于激活高压器件区域中的等级掺杂区域和高压器件的栅极氧化物生长的等级驱入工艺同时进行。

公开(公告)号：US06797983B2

公开(公告)日：2004-09-28

申请号：US10060460

申请日：2002-01-30

申请人： Ralph Chen ,  Marcus Yang ,  Yuan-Li Tsai ,  Ching-Chun Huang ,  Sheng-Hsiung Yang

发明人： Ralph Chen ,  Marcus Yang ,  Yuan-Li Tsai ,  Ching-Chun Huang ,  Sheng-Hsiung Yang

IPC分类号： H01L2100

CPC分类号： G02F1/136277

摘要： A method is provided to fabricate a LCOS back plane structure. The present invention utilized a HV device such as HV CMOS transistor (high voltage complementary metal oxide semiconductor transistor) and a HV capacitor layer are applied to the substrate. Furthermore, the HV capacitor layer has a higher dielectric layer and coupling ratio to sustain the higher operating voltage, such that the operating capacitance can be raised. Moreover, the HV CMOS transistor is combined with a mirror layer which has a higher reflective property, such that the LCOS back-plate structure has the better contrast and chrominance output in per area unit, when the operating voltage range is increased.

摘要翻译： 提供了一种制造LCOS背板结构的方法。 本发明将HV HV晶体管（高电压互补金属氧化物半导体晶体管）和HV电容层用于HV基板。 此外，HV电容层具有更高的介电层和耦合比，以维持更高的工作电压，使得可以提高工作电容。 此外，HV CMOS晶体管与具有较高反射特性的镜面层组合，使得当工作电压范围增加时，LCOS背板结构在每单位面积具有更好的对比度和色度输出。

公开(公告)号：US06245592B1

公开(公告)日：2001-06-12

申请号：US09572153

申请日：2000-05-17

申请人： Sheng-Hsiung Yang

发明人： Sheng-Hsiung Yang

IPC分类号： H01L2100

CPC分类号： H01L27/14689 ,  H01L27/14609 ,  H01L27/14656

摘要： A method for forming complementary metal-oxide semiconductor sensor is disclosed. The method includes the following steps. Firstly, a semiconductor substrate is provided. A first oxide layer is formed on the surface of the semiconductor substrate. A nitride layer is formed on the surface of the first oxide layer. Thus, p-type ions are first implanted into the semiconductor substrate to form a p-type well region. The p-type well region is annealed. The nitride layer is removed. The first oxide layer is removed. The second oxide layer is deposited on the surface of the semiconductor substrate. The p-type ions are secondly implanted into the second p-type well region to form a p-type field. The p-type field is annealed. The n-type ions are thirdly implanted into the semiconductor substrate as an n-type region abutting the oxide layer below. The n+-type ions are fourthly implanted into the n-type region as n+-type regions. The p+-type ions are fifthly implanted into the p-type field as a p+-type region. The n+-type region and the p+-type region are annealed to complete a semiconductor sensor device.

摘要翻译： 公开了一种形成互补金属氧化物半导体传感器的方法。 该方法包括以下步骤。 首先，提供半导体衬底。 第一氧化物层形成在半导体衬底的表面上。 在第一氧化物层的表面上形成氮化物层。 因此，首先将p型离子注入到半导体衬底中以形成p型阱区。 p型阱区退火。 去除氮化物层。 去除第一氧化物层。 第二氧化物层沉积在半导体衬底的表面上。 将p型离子二次注入到第二p型阱区中以形成p型场。 p型场退火。 将n型离子第三次注入到半导体衬底中作为邻接下面的氧化物层的n型区域。 n +型离子以n +型区域第四次注入n型区域。 p +型离子被第五次注入p型场作为p +型区域。 对n +型区域和p +型区域进行退火以完成半导体传感器装置。