公开(公告)号：US6117718A

公开(公告)日：2000-09-12

申请号：US386674

申请日：1999-08-31

申请人： Ching-Chun Hwang ,  Sheng-Hsiung Yang

发明人： Ching-Chun Hwang ,  Sheng-Hsiung Yang

IPC分类号： H01L21/8249 ,  H01L27/06 ,  H01L21/8238

CPC分类号： H01L21/8249 ,  H01L27/0623

摘要： A method for forming bipolar junction transistor with high gain via formulation of high voltage device in deep submicron process is disclosed. A substrate including a first part, a second part, and a third part is primarily provided; then, a first well in the first part and a second well in the second part are formed. A plurality of field oxide regions are formed on said substrate; subsequently, two third wells are formed in said third part. The following steps are to form a fourth well in said first well in said first part and two fifth wells in said second well in said second part; and to form a first gate on said first part between said two third wells, and a second gate on said second part between said two fifth wells. Next, a first spacer against said first gate and a second spacer against said second gate are formed. Further, first ions are introduced into said first part to serve as a collector region, and into said third part to serve as a first source/drain region. Finally, second ions are introduced into said first part to form an emitter region and a base region of a bipolar junction transistor, and into said second part to form a second source/drain region.

摘要翻译： 公开了一种通过在深亚微米工艺中配置高压器件形成具有高增益的双极结型晶体管的方法。 主要提供包括第一部分，第二部分和第三部分的基板; 然后，形成第一部分中的第一井和第二部分中的第二井。 在所述基板上形成多个场氧化物区域; 随后在所述第三部分中形成两个第三孔。 以下步骤是在所述第一部分的所述第一井中和在所述第二部分中的所述第二井中的两个第五井中形成第四井; 并且在所述第二阱之间的所述第一部分上形成第一栅极，以及在所述第二阱之间的所述第二阱之间的第二栅极。 接下来，形成靠着所述第一栅极的第一间隔件和抵靠所述第二栅极的第二间隔件。 此外，第一离子被引入所述第一部分中以用作集电极区域，并且进入所述第三部分以用作第一源极/漏极区域。 最后，将第二离子引入所述第一部分以形成双极结型晶体管的发射极区域和基极区域，并进入所述第二部分以形成第二源极/漏极区域。

公开(公告)号：US06410377B1

公开(公告)日：2002-06-25

申请号：US09707128

申请日：2000-11-06

申请人： Ching-Chun Hwang ,  Sheng-Hsiung Yang

发明人： Ching-Chun Hwang ,  Sheng-Hsiung Yang

IPC分类号： H01L218238

CPC分类号： H01L21/761 ,  H01L21/823878 ,  H01L21/823892 ,  H01L27/0922

摘要： The present invention provides a method for integrating the fabrication of a sensor and a high voltage devices. The N conductive type sensor has a P conductive type doped region in the substrate of the sensor active region to effectively reduce the leakage at edges of the field oxide. Furthermore, there are the P conductive type field and the P conductive type well used as isolations for the sensor and these isolations can prevent blooming. Between these isolations, high voltage devices can be simultaneously formed thereon.

摘要翻译： 本发明提供了一种用于集成传感器和高电压装置的制造的方法。 N导电型传感器在传感器有源区的衬底中具有P导电型掺杂区域，以有效地减少场氧化物边缘的泄漏。 此外，有P导电型场和P导电类型良好地用作传感器的隔离，并且这些隔离可以防止起霜。 在这些隔离之间，可以在其上同时形成高电压装置。

公开(公告)号：US08242921B2

公开(公告)日：2012-08-14

申请号：US12555054

申请日：2009-09-08

申请人： Sheng-Hsiung Yang

发明人： Sheng-Hsiung Yang

IPC分类号： G08B17/10

CPC分类号： G08B17/10 ,  G08B17/125 ,  G08B25/08

摘要： A portable electronic device includes an image capturing unit, a processor unit connected to the image capturing unit, and an alarm unit connected to the processor unit. The image capturing unit captures outside images, the processor unit detects if there is any smoke near the portable electronic device according to the images and measuring relative parameters of detected smoke, and the alarm unit alarms when at least one parameter of detected smoke is out of predetermined acceptable ranges.

摘要翻译： 便携式电子设备包括图像捕获单元，连接到图像捕获单元的处理器单元和连接到处理器单元的报警单元。 图像捕获单元捕获外部图像，处理器单元根据图像检测便携式电子设备附近是否有烟雾，并测量检测到的烟雾的相对参数，并且当检测到的烟雾的至少一个参数超出 预定的可接受范围。

公开(公告)号：US20070057850A1

公开(公告)日：2007-03-15

申请号：US11513306

申请日：2006-08-31

申请人： Sheng-Hsiung Yang

发明人： Sheng-Hsiung Yang

IPC分类号： H01Q1/38

CPC分类号： H01Q21/065

摘要： A directional antenna structure is provided, which includes a patch antenna, a reflection plate, a cable connector, and a frame for the patch antenna, the reflection plate, and the cable connector to be fixed and assembled thereon. Through such a modular design, the antenna structure is manufactured and assembled through a simplified process, and besides this advantage, the antenna structure is further selectively integrated with a housing having the same assembly interface, and thus becoming a modular antenna structure integrated with various housings.

摘要翻译： 提供一种定向天线结构，其包括贴片天线，反射板，电缆连接器和用于贴片天线的框架，反射板和电缆连接器，以固定和组装在其上。 通过这样的模块化设计，通过简化的工艺制造和组装天线结构，除此之外，天线结构进一步选择性地与具有相同组装接口的壳体集成，从而成为与各种壳体集成的模块化天线结构 。

公开(公告)号：US07446725B2

公开(公告)日：2008-11-04

申请号：US11600883

申请日：2006-11-17

申请人： Jia-Jiu Song ,  Sheng-Hsiung Yang ,  Jr-Ren Jeng ,  Mu-Kun Hsueh

发明人： Jia-Jiu Song ,  Sheng-Hsiung Yang ,  Jr-Ren Jeng ,  Mu-Kun Hsueh

IPC分类号： H01Q1/42

CPC分类号： H01Q9/28 ,  H01Q9/40

摘要： An antenna structure including a ground plate, a hollow bolt, and a conductive conical dome is provided. The hollow bolt passes through the ground plate, and a signal wire is laid in the hollow bolt. An insulator is disposed between the signal wire and the hollow bolt for providing electrical isolation therebetween. The conductive conical dome is connected with one end of the signal wire. The hollow bolt and a nut are provided to fix the antenna on a wall or a ceiling. Since the signal wire is laid in the hollow bolt, the signal wire can be connected to a signal source only by connecting a signal cable to the hollow bolt.

摘要翻译： 提供了包括接地板，中空螺栓和导电圆锥形的天线结构。 中空螺栓穿过接地板，信号线铺设在中空螺栓中。 绝缘体设置在信号线和中空螺栓之间，用于在它们之间提供电隔离。 导电锥形圆顶与信号线的一端连接。 提供中空螺栓和螺母以将天线固定在墙壁或天花板上。 由于信号线铺设在中空螺栓中，信号线只能通过将信号线连接到中空螺栓而连接到信号源。

公开(公告)号：US20070287502A1

公开(公告)日：2007-12-13

申请号：US11808328

申请日：2007-06-08

申请人： Sheng-Hsiung Yang ,  Teng-Chao Chiang

发明人： Sheng-Hsiung Yang ,  Teng-Chao Chiang

IPC分类号： H04B7/185 ,  H04M1/00

CPC分类号： H01Q21/061 ,  H01Q1/1207 ,  H01Q23/00

摘要： An antenna assembly includes a plurality of wireless signal transceivers and at least one positioning plate. Each of the wireless signal transceivers includes a base fixed on the positioning plate. The positioning plate has an expansion capability for a plurality of bases being fixed thereon, such that a user can add or reduce the number of the wireless signal transceiver independently.

摘要翻译： 天线组件包括多个无线信号收发器和至少一个定位板。 每个无线信号收发机包括固定在定位板上的基座。 定位板具有用于固定在其上的多个基座的扩展能力，使得用户可以独立地添加或减少无线信号收发器的数量。

公开(公告)号：US20070059979A1

公开(公告)日：2007-03-15

申请号：US11513141

申请日：2006-08-31

申请人： Sheng-Hsiung Yang

发明人： Sheng-Hsiung Yang

IPC分类号： H01R13/60

CPC分类号： H01R13/5202 ,  H05K5/063

摘要： A waterproof housing is provided, which includes a first housing cover and a second housing cover that are snapped with each other to form an inner chamber, wherein the first housing cover has a closed annular-shaped outer retaining wall on one side and an inner retaining wall; a channel is naturally formed there-between; and the second housing cover has a closed annular-shaped embedding wall on one side that is correspondingly embedded into the channel. The housing formed by combining the outer retaining wall with the inner retaining wall takes the two retaining walls as two defenses to prevent the rain or foreign matters from entering into the chamber. Even if the rain penetrates into the channel via a gap by accident, the rain flows to the bottom part along the channel and is discharged from the drain holes disposed at the bottom, without being retained in the housing.

摘要翻译： 提供一种防水壳体，其包括彼此咬合以形成内腔的第一壳体盖和第二壳体盖，其中第一壳体盖在一侧具有封闭的环形外挡土墙和内保持件 壁; 一个通道自然形成在那里; 并且第二壳体盖在一侧上具有相应地嵌入通道中的封闭的环形嵌入壁。 通过将外挡土墙与内挡土板结合而形成的外壳将两个挡土墙作为两个防护装置，以防止雨水或异物进入舱室。 即使雨水意外地通过间隙渗透到通道中，雨也沿着通道流到底部，并且从设置在底部的排水孔排出，而不被保持在壳体中。

公开(公告)号：US06238984B1

公开(公告)日：2001-05-29

申请号：US09565783

申请日：2000-05-05

申请人： Sheng-Hsiung Yang

发明人： Sheng-Hsiung Yang

IPC分类号： H01L218234

CPC分类号： H01L21/823443 ,  H01L21/823418

摘要： A method for forming a high voltage and low voltage device is disclosed. According to the process, by the protection of the photoresist, the cap oxide layer on a high voltage device will not be removed in the dry etching process, and with the isolaton of cap oxide layer, the metal layer will not react on high voltage device to produce metal silicide. Accordingly, the high voltage device will not be spoiled by the silicide. The method tolerates normal silicide process, and high current feature of low voltage logic device. In addition, the prior cell library is still suitable for this process.

摘要翻译： 公开了一种用于形成高压和低压装置的方法。 根据该方法，通过保护光致抗蚀剂，在干蚀刻工艺中，高电压器件上的帽氧化物层将不会被去除，并且通过帽氧化物层的隔离，金属层将不会在高压器件上反应 以生产金属硅化物。 因此，高电压装置不会被硅化物破坏。 该方法容忍正常的硅化物工艺，以及低电压逻辑器件的高电流特性。 此外，先前的细胞库仍然适用于该过程。

公开(公告)号：US09577338B2

公开(公告)日：2017-02-21

申请号：US13656753

申请日：2012-10-22

申请人： Chun-Jui Pan ,  Sheng-Hsiung Yang ,  Wen-Chieh Tsai

发明人： Chun-Jui Pan ,  Sheng-Hsiung Yang ,  Wen-Chieh Tsai

IPC分类号： H01Q9/42 ,  H01Q1/50 ,  H01Q5/378 ,  H01Q5/35 ,  H01Q1/38

CPC分类号： H01Q9/42 ,  H01Q1/38 ,  H01Q1/50 ,  H01Q5/35 ,  H01Q5/378

摘要： An antenna disposed on a substrate includes a radiating portion, a first coupling and feeding portion, and a second coupling and feeding portion. A length of the radiating portion is substantially equal to a half wavelength of electromagnetic signals radiated by the radiating portion. Each coupling and feeding portion includes a feeding part and a coupling part. The feeding part feeds the electromagnetic signals to the radiating portion via the coupling part so as to achieve effects of a multiple-input multiple-output (MIMO) antenna. A gap is defined between the coupling part and the radiating portion to improve an isolation of the MIMO antenna.

摘要翻译： 设置在基板上的天线包括辐射部分，第一联接和馈送部分以及第二联接和馈送部分。 辐射部分的长度基本上等于由辐射部分辐射的电磁信号的半波长。 每个联接和进给部分包括进给部分和联接部分。 馈电部分经由耦合部分将电磁信号馈送到辐射部分，以实现多输入多输出（MIMO）天线的效果。 在耦合部分和辐射部分之间限定间隙以改善MIMO天线的隔离。

公开(公告)号：US07256092B2

公开(公告)日：2007-08-14

申请号：US10710616

申请日：2004-07-25

申请人： Jung-Ching Chen ,  Jy-Hwang Lin ,  Sheng-Hsiung Yang ,  Jim Su

发明人： Jung-Ching Chen ,  Jy-Hwang Lin ,  Sheng-Hsiung Yang ,  Jim Su

IPC分类号： H01L21/8232

CPC分类号： H01L29/1083 ,  H01L21/2652 ,  H01L21/823814 ,  H01L21/823857 ,  H01L21/823878 ,  H01L21/823892 ,  H01L29/7833

摘要： A high-voltage semiconductor MOS process that is fully compatible with low-voltage MOS process is provided. The high-voltage N/P well are implanted into the substrate prior to the definition of active areas. The channel stop doping regions are formed after the formation of field oxide layers, thus avoiding lateral diffusion of the channel stop doping regions. In addition, the grade drive-in process used to activate the grade doping regions in the high-voltage device area and the gate oxide growth of the high-voltage devices are performed simultaneously.

摘要翻译： 提供了与低压MOS工艺完全兼容的高压半导体MOS工艺。 在定义有源区之前，将高压N / P阱注入到衬底中。 在形成场氧化物层之后形成通道停止掺杂区域，从而避免沟道停止掺杂区域的横向扩散。 此外，用于激活高压器件区域中的等级掺杂区域和高压器件的栅极氧化物生长的等级驱入工艺同时进行。