Thin film transistor type optical sensor
    11.
    发明授权
    Thin film transistor type optical sensor 有权
    薄膜晶体管型光学传感器

    公开(公告)号:US06953978B2

    公开(公告)日:2005-10-11

    申请号:US10867823

    申请日:2004-06-16

    摘要: A image detector comprises a light source for radiating light in accordance with a predetermined signal; a window for transmitting the light from the light source; a thin film phototransistor for generating an optical current in accordance with the intensity of external light; a storage capacitor for storing charge information transmitted from the thin film phototransistor; a thin film switching transistor for outputting the information stored in the storage capacitor in accordance with an external control signal; an insulating layer for covering the window, the thin film phototransistor, the storage capacitor, and the thin film switching transistor; a protecting layer formed on the insulating layer; and a conductive object detection pattern formed on the protecting layer to apply an electrical power supply signal to the light source when a conductive living object contacts the conductive objecting detecting pattern.

    摘要翻译: 图像检测器包括用于根据预定信号照射光的光源; 用于从光源透射光的窗口; 用于根据外部光的强度产生光电流的薄膜光电晶体管; 用于存储从薄膜光电晶体管传送的电荷信息的存储电容器; 薄膜开关晶体管,用于根据外部控制信号输出存储在存储电容器中的信息; 用于覆盖窗户的绝缘层,薄膜光电晶体管,存储电容器和薄膜开关晶体管; 形成在绝缘层上的保护层; 以及形成在所述保护层上的导电物体检测图案,以在导电性物体接触所述导电性物体检测图案时向所述光源施加电力供应信号。

    Thin film transistor type photo sensor
    12.
    发明授权
    Thin film transistor type photo sensor 有权
    薄膜晶体管型光电传感器

    公开(公告)号:US06242769B1

    公开(公告)日:2001-06-05

    申请号:US09453299

    申请日:1999-12-03

    IPC分类号: H01L31062

    CPC分类号: H01L27/14678 H01L29/78633

    摘要: A TFT type optical detecting sensor includes a sensor TFT for generating optical current by detecting light reflected from an object, a storage capacitor for storing charges of the optical current, and a switching TFT for controlling releasing of the charges stored in the storage capacitor. The storage capacitor is made of a transparent conductive material, such that light is transmitted from a light source through the storage capacitor to the object.

    摘要翻译: TFT型光检测传感器包括用于通过检测从物体反射的光产生光电流的传感器TFT,用于存储光电流的电荷的存储电容器,以及用于控制存储在存储电容器中的电荷释放的开关TFT。 存储电容器由透明导电材料制成,使得光从光源通过存储电容器传输到物体。

    OLED MICRO-CAVITY STRUCTURE AND METHOD OF MAKING
    13.
    发明申请
    OLED MICRO-CAVITY STRUCTURE AND METHOD OF MAKING 有权
    OLED微孔结构及其制备方法

    公开(公告)号:US20140191202A1

    公开(公告)日:2014-07-10

    申请号:US13860282

    申请日:2013-04-10

    IPC分类号: H01L51/52 H01L51/56

    摘要: An organic light emitting diode, including: a substrate; a first cavity electrode in a first micro-cavity region of the substrate; a first transparent electrode of a first thickness in the first micro-cavity region, the first transparent electrode overlaps beyond a first side of the first cavity electrode; a first emissive layer in electrical connection with the first transparent electrode; and a cathode layer on the first emissive layer.

    摘要翻译: 一种有机发光二极管,包括:基板; 在所述基板的第一微腔区域中的第一空腔电极; 在所述第一微腔区域中具有第一厚度的第一透明电极,所述第一透明电极与所述第一空腔电极的第一侧重叠; 与所述第一透明电极电连接的第一发射层; 和第一发射层上的阴极层。

    Transflective liquid crystal display device having color filter-on-thin film transistor (COT) structure and method of fabricating the same
    14.
    发明授权
    Transflective liquid crystal display device having color filter-on-thin film transistor (COT) structure and method of fabricating the same 有权
    具有彩色滤光片薄膜晶体管(COT)结构的透反射液晶显示装置及其制造方法

    公开(公告)号:US07495728B2

    公开(公告)日:2009-02-24

    申请号:US11541699

    申请日:2006-10-03

    IPC分类号: G02F1/1335

    摘要: A transflective liquid crystal display device includes a thin film transistor disposed at a corner of a pixel region, the thin film transistor including a gate electrode, a semiconductor layer, a source electrode, and a drain electrode, a reflector disposed in the pixel region and spaced apart from the thin film transistor, the reflector formed of the same material as one of the gate, source, and drain electrodes, a color filter disposed within the pixel region, the color filter having one of red, green, and blue colors, a black matrix over the thin film transistor along color filter borders of adjacent pixel regions, and a pixel electrode formed of a transparent conductive material adjacent to the color filter, the pixel electrode having a first end portion contacting the drain electrode of the thin film transistor, wherein the pixel region is divided into a reflective portion including the reflector and a transmissive portion absent of the reflector.

    摘要翻译: 半透射型液晶显示装置包括:设置在像素区域的角部的薄膜晶体管,所述薄膜晶体管包括栅电极,半导体层,源电极和漏电极,设置在所述像素区域中的反射器, 与薄膜晶体管隔开,反射器由与栅极,源极和漏极之一相同的材料形成,滤色器设置在像素区域内,滤色器具有红色,绿色和蓝色之一, 沿着相邻像素区域的滤色器边界的薄膜晶体管上的黑矩阵,以及由与滤色片相邻的透明导电材料形成的像素电极,所述像素电极具有接触薄膜晶体管的漏电极的第一端部 ,其中所述像素区域被分成包括所述反射器的反射部分和不存在所述反射器的透射部分。

    Array substrate of liquid crystal display and fabricating method thereof
    15.
    发明授权
    Array substrate of liquid crystal display and fabricating method thereof 有权
    液晶显示阵列基板及其制造方法

    公开(公告)号:US07256842B2

    公开(公告)日:2007-08-14

    申请号:US10183683

    申请日:2002-06-28

    IPC分类号: G02F1/1343

    摘要: An array substrate of a liquid crystal display being capable of increasing the electrostatic capacitance of a storage capacitor without decreasing the aperture ratio of the LCD. In the array substrate, the gate line is formed a disposed material of a first and a second metal layer. The first metal layer of the gate line is extended on the pixel area.

    摘要翻译: 液晶显示器的阵列基板能够在不降低LCD的开口率的情况下增加存储电容器的静电电容。 在阵列基板中,栅极线形成第一和第二金属层的设置材料。 栅极线的第一金属层在像素区域上延伸。

    Substrate for a liquid crystal display device and fabricating method thereof
    16.
    发明申请
    Substrate for a liquid crystal display device and fabricating method thereof 有权
    液晶显示装置用基板及其制造方法

    公开(公告)号:US20050140842A1

    公开(公告)日:2005-06-30

    申请号:US11023621

    申请日:2004-12-29

    摘要: A substrate for a liquid crystal display (LCD) device includes: gate and data lines crossing each other to define a pixel region on a substrate; a thin film transistor adjacent to where the gate and data lines cross, the thin film transistor including a gate electrode, a semiconductor pattern, a source electrode and a drain electrode; a black matrix corresponding to the gate and data lines and the thin film transistor; a first insulating layer disposed on the black matrix and including first and second portions, the first portion corresponding to the pixel region and having a first thickness, and the second portion having a second thickness smaller than the first thickness; a color filter pattern disposed on the first insulating layer and corresponding to the first portion; a first insulating layer disposed on the color filter pattern including first and second portions, the first portion corresponding to the color filter pattern and has a first thickness, and the second portion having a second thickness smaller than the first thickness; and a pixel electrode disposed over the color filter pattern and being connected with the thin film transistor.

    摘要翻译: 液晶显示器(LCD)器件的衬底包括:栅极和数据线彼此交叉以限定衬底上的像素区域; 与栅极和数据线交叉的位置相邻的薄膜晶体管,所述薄膜晶体管包括栅电极,半导体图案,源电极和漏电极; 对应于栅极和数据线的黑矩阵和薄膜晶体管; 第一绝缘层,设置在黑矩阵上并且包括第一和第二部分,第一部分对应于像素区域并具有第一厚度,第二部分具有小于第一厚度的第二厚度; 滤色器图案,设置在所述第一绝缘层上并对应于所述第一部分; 布置在包括第一和第二部分的滤色器图案上的第一绝缘层,第一部分对应于滤色器图案并且具有第一厚度,并且第二部分具有小于第一厚度的第二厚度; 以及设置在滤色器图案上并与薄膜晶体管连接的像素电极。

    Thin film transistor type optical sensor
    17.
    发明授权
    Thin film transistor type optical sensor 有权
    薄膜晶体管型光学传感器

    公开(公告)号:US06774396B1

    公开(公告)日:2004-08-10

    申请号:US09487173

    申请日:2000-01-19

    IPC分类号: H01L2904

    摘要: A image detector comprises a light source for radiating light in accordance with a predetermined signal; a window for transmitting the light from the light source; a thin film phototransistor for generating an optical current in accordance with the intensity of external light; a storage capacitor for storing charge information transmitted from the thin film phototransistor; a thin film switching transistor for outputting the information stored in the storage capacitor in accordance with an external control signal; an insulating layer for covering the window, the thin film phototransistor, the storage capacitor, and the thin film switching transistor, a protecting layer formed on the insulating layer; and a conductive object detection pattern formed on the protecting layer to apply an electrical power supply signal to the light source when a conductive living object contacts the conductive objecting detecting pattern.

    摘要翻译: 图像检测器包括用于根据预定信号照射光的光源; 用于从光源透射光的窗口; 用于根据外部光的强度产生光电流的薄膜光电晶体管; 用于存储从薄膜光电晶体管传送的电荷信息的存储电容器; 薄膜开关晶体管,用于根据外部控制信号输出存储在存储电容器中的信息; 用于覆盖窗口的绝缘层,薄膜光电晶体管,存储电容器和薄膜开关晶体管,形成在绝缘层上的保护层; 以及形成在所述保护层上的导电物体检测图案,以在导电性物体接触所述导电性物体检测图案时向所述光源施加电力供应信号。

    Array substrate of liquid crystal display device having color filter on thin film transistor structure and method of fabricating the same
    19.
    发明授权
    Array substrate of liquid crystal display device having color filter on thin film transistor structure and method of fabricating the same 有权
    具有薄膜晶体管结构的滤色器的液晶显示装置的阵列基板及其制造方法

    公开(公告)号:US07046315B2

    公开(公告)日:2006-05-16

    申请号:US10629741

    申请日:2003-07-30

    IPC分类号: G02F1/136

    摘要: An array substrate of a liquid crystal display device having a color filter on a thin film transistor structure and a method of fabricating the same are disclosed in the present invention. The liquid crystal display device having a COT structure array substrate includes a top gate type thin film transistor formed on a substrate and having an active layer, a gate electrode, a source electrode, and a drain electrode, a storage capacitor adjacent to the top gate type thin film transistor and having a first storage electrode and a second storage electrode, a black matrix on the top gate type thin film transistor, a first pixel electrode at a pixel region and contacting a drain electrode, a color filter on the first pixel electrode at the pixel region, and a second pixel electrode on the color filter and contacting the first pixel electrode at the portion over the black matrix.

    摘要翻译: 在本发明中公开了具有薄膜晶体管结构上的滤色器的液晶显示装置的阵列基板及其制造方法。 具有COT结构阵列基板的液晶显示装置包括形成在基板上的顶栅型薄膜晶体管,具有有源层,栅电极,源电极和漏电极,与顶栅相邻的存储电容器 具有第一存储电极和第二存储电极,顶栅型薄膜晶体管上的黑矩阵,像素区域处的第一像素电极和漏电极接触,第一像素电极上的滤色器 以及滤色器上的第二像素电极,并且与黑矩阵上的部分接触第一像素电极。

    Liquid crystal display device and manufacturing method thereof
    20.
    发明授权
    Liquid crystal display device and manufacturing method thereof 有权
    液晶显示装置及其制造方法

    公开(公告)号:US06900856B2

    公开(公告)日:2005-05-31

    申请号:US10653908

    申请日:2003-09-04

    摘要: A manufacturing method of a liquid crystal display device includes steps of forming liquid crystal display by patterning the passivation layer and the gate insulating layer by using the black matrix as an etching mask to expose the portion of the drain electrode, the gate pad, and the data pad, forming a first transparent conductive layer on the black matrix, wherein the first transparent conductive layer contacts the portion of the drain electrode, the gate pad, and the data pad, forming a color filter layer on the first transparent conductive layer in the opening, forming a second transparent conductive layer on the color filter layer, the second transparent conductive layer contacting the first transparent conductive layer, and forming a pixel electrode, a gate pad terminal and a data pad terminal by patterning the first and second transparent conductive layers, wherein the pixel electrode is disposed in the pixel area, the gate pad terminal is disposed on the gate pad, and the data pad terminal is disposed on the data pad.

    摘要翻译: 液晶显示装置的制造方法包括以下步骤:通过使用黑色矩阵作为蚀刻掩模来图案化钝化层和栅极绝缘层来形成液晶显示器,以暴露出漏电极,栅极焊盘和 数据焊盘,在黑矩阵上形成第一透明导电层,其中第一透明导电层接触漏电极,栅极焊盘和数据焊盘的部分,在第一透明导电层上形成滤色器层, 在所述滤色器层上形成第二透明导电层,所述第二透明导电层与所述第一透明导电层接触,以及通过对所述第一和第二透明导电层进行构图来形成像素电极,栅极焊盘端子和数据焊盘端子 其中像素电极设置在像素区域中,栅极焊盘端子设置在栅极焊盘上和数据上 焊盘端子设置在数据焊盘上。