摘要:
A memory device with multiple clock domains. Separate clocks to different portions of the control circuitry create different clock domains. The different domains are sequentially turned on as needed to limit the power consumed. The turn on time of the domains is overlapped with the latency for the memory access to make the power control transparent to the user accessing the memory core. The memory device can dynamically switch between a fast and a slow clock depending upon the needed data bandwidth. The data bandwidth across the memory interface can be monitored by the memory controller, and when it drops below a certain threshold, a slower clock can be used. The clock speed can be dynamically increased as the bandwidth demand increases.
摘要:
An electronic device with device timing constraints includes a set of connections coupled to an interconnect structure that carries row and column commands. A memory core stores data. A memory interface is connect to the set of connections and the memory core. The memory interface includes circuitry for generating memory core timing signals in accordance with the row commands and the column commands. The memory core timing signals have timing constraints to insure correct memory core operation. The memory interface circuitry includes individual delay components for adjusting the timing of selected timing signals of the memory core timing signals.
摘要:
A memory system configured to provide thermal regulation of a plurality of memory devices is disclosed. The memory system comprises a memory device coupled to a bus. Additionally, the memory system also comprises a controller coupled to the bus. The controller determines an operating temperature of the memory device. Based on the operating temperature of the memory device, the controller is further operable to manipulate the operation of the memory system.
摘要:
Additional modes are provided to enhance the functionality and performance of a memory system. In one embodiment, a unique bit mask is supplied with the write data used in each column access. In an alternate embodiment, a bit mask register and byte mask register are provided to support bit level and byte level masking. The bit mask and write data registers are realized as a single register to provide the functionality while minimizing component space and cost. In another embodiment, a separate bit mask and byte mask are provided. The byte mask is loaded with mask data in one cycle and is used during the next "q" column write accesses. This structure provides for operating modes with no bit masking, with bit masks supplied for every row access, and with bit masks supplied with every column access. In order to enhance the functionality of a system, such as a two-dimensional graphics system, in an alternate embodiment, the memory system is provided with two registers and a select control line to select data from one of two registers. In a computer graphics system, this is used to select between foreground and background colors. The embodiment can be utilized in conjunction with the other embodiments described to provide enhanced functionality and performance.
摘要:
A bus system is described that minimizes clock-data skew. The bus system includes a data bus, a clockline and synchronization circuitry. The clockline has two clockline segments. Each clockline segment extends the entire length of the data bus and is joined to the other clockline segment by a turnaround at one end of the data bus. The clockline ensures that clock and data signals travel in the same direction. Synchronization circuitry within transmitting devices synchronizes data signals to be coupled onto the data bus with the clock signal used by other devices to receive the data.
摘要:
As interfaces to DRAMs become more advanced and higher performance, the interfaces and signal lines required to support the interface become more expensive to implement. Therefore, it is desirable to minimize the number of signal lines and maximize the bandwidth of the signal lines interfacing to the DRAM in order to take advantage of the high performance of the signal lines in the interface. In the DRAM memory system of the present invention, the address and control lines and are combined and the information multiplexed such that the DRAM pins have roughly equal information rate at all times.
摘要:
A power control circuit to minimize power consumption of CMOS circuits by disabling/enabling the clock input to the CMOS circuit. A phase locked loop (PLL) or delay locked loop (DLL) drives a capacitive load of the component and a dummy load comparable to the component load. A standby latch is provided to control the clock input to the component. In a standby state, the clock signal is not provided to the component but the PLL/DLL continues to operate, driving the dummy load. Thus, when it is desirable to power on the circuit, the standby latch is reset and the clock signal is provided to the component, thereby turning on the component with little latency.
摘要:
A receiver for a direct sequence spread-spectrum communication system of the type in which a transmitter mixes a clocked pseudo-random sequence with a modulated carrier for spreading the carrier energy across a wide band of frequencies, comprises a resident clock-driven pseudo-random code generator for locally generating an essentially identical, spectrum despreading code sequence; means for clocking the resident code generator at a nominal frequency which is offset in a predetermined sense from the clock frequency of the transmitted code sequence such that the phase of the locally generated code sequence tends to slide in one direction with respect to the phase of the transmitted code sequence; detection means for determining whether the locally generated and the transmitted code sequence are phase aligned or misaligned and for sensing their actual, incipient and/or predicted departures from a phase aligned state, and phase control means for adjusting the clock frequency for the resident code generator whenever such a departure is sensed, thereby shifting the phase of the locally generated code sequence in the opposite direction with respect to the transmitted code sequence by an amount which tends to restore the two code sequences to a phase aligned state.
摘要:
Methods of operation of a memory device and system are provided in embodiments. Initialization operations are conducted at a first frequency of operation during an initialization sequence. Memory access operations are then performed at a second frequency of operation. The second frequency of operation is higher than the first frequency of operation. Also, the memory access operations include a read operation and a write operation. In an embodiment, information that represents the first frequency of operation and the second frequency of operation is read from a serial presence detect device.
摘要:
A semiconductor memory device includes a memory core, a first interface to receive write data from a first set of interconnect resources, and a second interface, separate from the first interface, to receive from a second set of interconnect resources a column address and a first code. The column address is associated with the write data and identifies a column of the memory core in which to store the write data. The first code indicates whether the write data is selectively masked by data mask information. If the first code indicates that the write data is selectively masked, the second interface is to receive data mask information specifying whether to selectively write portions of the write data to the memory core.