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    LAYER FOR THIN FILM PHOTOVOLTAICS AND A SOLAR CELL MADE THEREFROM
    14.
    发明申请
    LAYER FOR THIN FILM PHOTOVOLTAICS AND A SOLAR CELL MADE THEREFROM 审中-公开
    薄膜太阳能电池和太阳能电池的薄膜

    公开(公告)号：US20100243056A1

    公开(公告)日：2010-09-30

    申请号：US12415275

    申请日：2009-03-31

    申请人： Bastiaan Arie Korevaar ,  James Neil Johnson ,  Dalong Zhong ,  Yangang Andrew Xi ,  Faisal Razi Ahmad

    发明人： Bastiaan Arie Korevaar ,  James Neil Johnson ,  Dalong Zhong ,  Yangang Andrew Xi ,  Faisal Razi Ahmad

    IPC分类号： H01L31/04 ,  B05D1/36 ,  C23C16/448 ,  C23C14/35 ,  C25D5/00

    CPC分类号： H01L31/1828 ,  H01L31/02963 ,  H01L31/03529 ,  H01L31/0368 ,  Y02E10/543

    摘要： A photovoltaic device is provided comprising an absorber layer, wherein the absorber layer comprises a plurality of grains separated by grain boundaries. At least one layer is disposed over the absorber layer. The absorber layer comprises grain boundaries that are substantially perpendicular to the at least one layer disposed over the absorber layer. The plurality of grains has a median grain diameter of less than 1 micrometer. Further, the grains are either p-type or n-type. The grain boundaries comprise an active dopant. The active dopant concentration in the grain boundaries is higher than the effective dopant concentration in the grains. The grains and grain boundaries may be of the same type or opposite type. Further, when the grain boundaries are n-type the bottom of the grain boundaries may be p-type. A method of making the absorber layer is also disclosed.

    摘要翻译： 提供了包括吸收层的光伏器件，其中吸收层包括由晶界分开的多个晶粒。 至少一层设置在吸收层之上。 吸收层包括基本上垂直于设置在吸收层上方的至少一层的晶界。 多个晶粒的中值粒径小于1微米。 此外，晶粒是p型或n型。 晶界包含有源掺杂剂。 晶界中的有效掺杂剂浓度高于晶粒中的有效掺杂剂浓度。 晶粒和晶界可以是相同类型或相反的类型。 此外，当晶界为n型时，晶界的底部可以是p型。 还公开了制造吸收层的方法。

    MONOLITHICALLY INTEGRATED SOLAR MODULES AND METHODS OF MANUFACTURE
    15.
    发明申请
    MONOLITHICALLY INTEGRATED SOLAR MODULES AND METHODS OF MANUFACTURE 审中-公开
    单片集成太阳能模块及其制造方法

    公开(公告)号：US20100236607A1

    公开(公告)日：2010-09-23

    申请号：US12790698

    申请日：2010-05-28

    申请人： Bastiaan Arie Korevaar ,  James Neil Johnson ,  Holly Ann Blaydes ,  James Edward Pickett ,  Thomas Miebach

    发明人： Bastiaan Arie Korevaar ,  James Neil Johnson ,  Holly Ann Blaydes ,  James Edward Pickett ,  Thomas Miebach

    IPC分类号： H01L31/06 ,  H01L31/18

    CPC分类号： H01L31/0516 ,  H01L31/02 ,  H01L31/0322 ,  H01L31/03925 ,  H01L31/03926 ,  H01L31/046 ,  H01L31/0749 ,  H01L31/1828 ,  Y02E10/541 ,  Y02E10/543 ,  Y02P70/521

    摘要： A monolithically integrated cadmium telluride (CdTe) photovoltaic (PV) module includes a first electrically conductive layer and an insulating layer. The first electrically conductive layer is disposed below the insulating layer. The PV module further includes a back contact metal layer and a CdTe absorber layer. The back contact metal layer is disposed between the insulating layer and the CdTe absorber layer. The PV module further includes a window layer and a second electrically conductive layer. The window layer is disposed between the CdTe absorber layer and the second electrically conductive layer. At least one first trench extends through the back contact metal layer, at least one second trench extends through the absorber and window layers, and at least one third trench extends through the second electrically conductive layer. A method for monolithically integrating CdTe PV cells is also provided.

    摘要翻译： 单片集成碲化镉（CdTe）光伏（PV）模块包括第一导电层和绝缘层。 第一导电层设置在绝缘层的下方。 PV模块还包括背接触金属层和CdTe吸收层。 背接触金属层设置在绝缘层和CdTe吸收层之间。 PV模块还包括窗口层和第二导电层。 窗口层设置在CdTe吸收层和第二导电层之间。 至少一个第一沟槽延伸穿过背接触金属层，至少一个第二沟槽延伸穿过吸收体和窗口层，并且至少一个第三沟槽延伸穿过第二导电层。 还提供了一种用于单片集成CdTe PV电池的方法。

    Graded hybrid amorphous silicon nanowire solar cells
    18.
    发明申请
    Graded hybrid amorphous silicon nanowire solar cells 审中-公开
    分级混合非晶硅纳米线太阳能电池

    公开(公告)号：US20080135089A1

    公开(公告)日：2008-06-12

    申请号：US11599722

    申请日：2006-11-15

    申请人： Loucas Tsakalakos ,  James Neil Johnson ,  Venkatesan Manivannan

    发明人： Loucas Tsakalakos ,  James Neil Johnson ,  Venkatesan Manivannan

    IPC分类号： H01L31/042 ,  H01L21/00 ,  B05D5/12 ,  H05H1/24 ,  C25D5/00

    CPC分类号： H01L31/0352 ,  H01L31/065 ,  H01L31/074 ,  Y02E10/50

    摘要： In some embodiments, the present invention is directed to compositionally-graded hybrid nanostructure-based photovoltaic devices comprising elongated semiconductor nanostructures and an amorphous semiconductor single layer with continuous gradation of doping concentration across its thickness from substantially intrinsic to substantially conductive. In other embodiments, the present invention is directed to methods of making such photovoltaic devices, as well as to applications which utilize such devices (e.g., solar cell modules).

    摘要翻译： 在一些实施方案中，本发明涉及包含细长半导体纳米结构和非晶半导体单层的基于组成分级的杂化纳米结构的光伏器件，其非晶半导体单层具有从其基本上固有的基本上导电的整个厚度的掺杂浓度的连续灰度。 在其他实施例中，本发明涉及制造这种光伏器件的方法，以及利用这种器件（例如，太阳能电池模块）的应用。

    Low-temperature plasma deposited hydrogenated amorphous germanium carbon abrasion-resistant coatings
    19.
    发明授权
    Low-temperature plasma deposited hydrogenated amorphous germanium carbon abrasion-resistant coatings 有权
    低温等离子体沉积氢化无定形锗碳耐磨涂层

    公开(公告)号：US07214406B2

    公开(公告)日：2007-05-08

    申请号：US10991985

    申请日：2004-11-18

    申请人： James Neil Johnson ,  Kevin Warner Flanagan ,  George Theodore Dalakos

    发明人： James Neil Johnson ,  Kevin Warner Flanagan ,  George Theodore Dalakos

    IPC分类号： B05D5/06

    CPC分类号： C23C16/32 ,  C23C16/30 ,  G02B1/105 ,  G02B1/14 ,  Y10T428/265 ,  Y10T428/30

    摘要： A method of forming a hydrogenated amorphous germanium carbon (α-GeCx:H) film on a surface of an infrared (IR) transmissive material such as a chalcogenide is provided. The method includes positioning an IR transmissive material in a reactor chamber of a parallel plate plasma reactor and thereafter depositing a hydrogenated amorphous germanium carbon (α-GeCx:H) film on a surface of the IR transmissive material. The depositing is performed at a substrate temperature of about 130° C. or less and in the presence of a plasma which is derived from a gas mixture including a source of germanium, an inert gas, and optionally hydrogen. Optical transmissive components, such as IR sensors and windows, that have improved abrasion-resistance are also provided.

    摘要翻译： 提供了在红外（IR）透射材料如硫族化物的表面上形成氢化无定形锗碳（α-GeC x H x：H）膜的方法。 该方法包括将IR透射材料定位在平行板等离子体反应器的反应室中，然后在IR透射材料的表面上沉积氢化的无定形锗碳（α-GeC x H x H：H）膜 。 在约130℃或更低的衬底温度下和在源自包含锗源，惰性气体和任选的氢的气体混合物的等离子体存在下进行沉积。 还提供了具有改善的耐磨性的光学透射组件，例如IR传感器和窗户。

    Surface passivated photovoltaic devices
    20.
    发明申请
    Surface passivated photovoltaic devices 失效
    表面钝化光伏器件

    公开(公告)号：US20060255340A1

    公开(公告)日：2006-11-16

    申请号：US11127648

    申请日：2005-05-12

    申请人： Venkatesan Manivannan ,  Abasifreke Udo Ebong ,  Jiunn-Ru Jeffrey Huang ,  Thomas Paul Feist ,  James Neil Johnson

    发明人： Venkatesan Manivannan ,  Abasifreke Udo Ebong ,  Jiunn-Ru Jeffrey Huang ,  Thomas Paul Feist ,  James Neil Johnson

    IPC分类号： H01L33/00

    CPC分类号： H01L31/078 ,  H01L31/02168 ,  H01L31/056 ,  H01L31/068 ,  H01L31/0745 ,  H01L31/0747 ,  Y02E10/52 ,  Y02E10/547

    摘要： A photovoltaic device comprising a photovoltaic cell is provided. The photovoltaic cell includes an emitter layer comprising a crystalline semiconductor material and a lightly doped crystalline substrate disposed adjacent the emitter layer. The lightly doped crystalline substrate and the emitter layer are oppositely doped. Further, the photovoltaic device includes a back surface passivated structure coupled to the photovoltaic cell. The structure includes a highly doped back surface field layer disposed adjacent the lightly doped crystalline substrate. The highly doped back surface field layer includes an amorphous or a microcrystalline semiconductor material, wherein the highly doped back surface field layer and the lightly doped crystalline substrate are similarly doped, and wherein a doping level of the highly doped back surface field layer is higher than a doping level of the lightly doped crystalline substrate. Additionally, the structure may also include an intrinsic back surface passivated layer disposed adjacent the lightly doped crystalline substrate, where the intrinsic back surface passivated layer includes an amorphous or a microcrystalline semiconductor material.

    摘要翻译： 提供了包括光伏电池的光伏器件。 光伏电池包括包含晶体半导体材料的发射极层和邻近发射极层设置的轻掺杂晶体衬底。 轻掺杂的晶体衬底和发射极层是相反掺杂的。 此外，光伏器件包括耦合到光伏电池的背面钝化结构。 该结构包括邻近轻掺杂晶体衬底设置的高掺杂背表面场层。 高度掺杂的背表面场层包括非晶或微晶半导体材料，其中高度掺杂的背表面场层和轻掺杂的晶体衬底被类似地掺杂，并且其中高掺杂背表面场层的掺杂水平高于 掺杂水平的轻掺杂晶体衬底。 此外，该结构还可以包括邻近轻掺杂晶体衬底设置的本征背表面钝化层，其中本征背表面钝化层包括非晶或微晶半导体材料。