摘要:
There is disclosed a composition comprising a mixture of endo- and exo-2-(bicyclo[2.2.1]hept-5-en-2-yl)-2,2-fluoroalkyl-ethan-2-ol which is rich in the exo isomer, preferably the endo/exo concentration ratio is no greater than 5/95. The composition is useful for forming a repeat unit of a polymer which polymer may further comprise additional repeat units derived from tert-butyl acrylate, hydroxyadamantyl acrylate, protected or unprotected fluorinated olefins, 2-methyl-2-adamantyl acrylate, 2-propenoic acid, 2-hydroxy-1,1,2-trimethylpropyl ester. Polymers of this invention are useful as the binder component of a photoresist composition for microlithography.
摘要:
Fluorinated copolymers useful in photoresist compositions and associated processes for microlithography are described. These copolymers are comprised of a fluoroalcohol or protected fluoroalcohol functional group which simultaneously imparts high ultraviolet (UV) transparency and developability in basic media to these materials and a repeat unit derived from an acrylate monomer containing a fluoroalkyl group or a hydroxyl substituted alkyl group. The materials of this invention have high UV transparency, particularly at 193 and 157 nm, which makes them highly useful for lithography at these short wavelengths.
摘要:
The present invention relates to novel unsaturated polycyclic compounds containing two fluoroalcohol substitutents. This invention also relates to homopolymers and copolymers derived from such unsaturated polycyclic compounds. The copolymers are useful for photoimaging compositions and, in particular, photoresist compositions (positive-working and/or negative-working) for imaging in the production of semiconductor devices. The polymers are especially useful in photoresist compositions having high UV transparency (particularly at short wavelengths, e.g., 157 nm) which are useful as base resins in resists and potentially in many other applications.
摘要:
The invention pertains to low polydispersity copolymers useful for photoimaging and photoresist compositions, and to the photoimaging processes which use these compositions. The low polydispersity copolymers of this invention are prepared using controlled radical polymerization (CRP) techniques, such as RAFT (reversible addition fragmentation chain transfer) polymerization.
摘要:
The present invention relates to novel photoresist compositions and processes for preparing the same utilizing polymers having a low polydispersity via the use of certain chain transfer agents (CTA) with certain monomers to provide said polymers. The polymers incorporating the chain transfer agents can be homopolymers, or made with additional monomers to provide copolymers. These polymers/copolymers are then converted into photoresist compositions for use as such.
摘要:
This invention provides a fluorine-containing copolymer having a repeat unit derived from at least one fluorinated olefin and a repeat unit derived from at least one polycyclic ethylenically unsaturated monomer having pendant hydroxyl or esterified hydroxyl groups, and optionally other repeat units, typically derived from an acrylate. These polymers have high transparency at short wavelengths such as 193 nm and 157 nm, and provide good plasma etch resistance and adhesive properties. Also provided are photoresist compositions and substrates coated therewith.
摘要:
This invention provides novel fluorine containing polymers which comprise at least one fluorinated olefin, at least one polycyclic ethylenically unsaturated monomer with a fused 4-membered carbocyclic ring and, optionally, other components. The polymers are useful for photoimaging compositions and, in particular, photoresist compositions (positive-working and/or negative-working) for imaging in the production of semiconductor devices. The polymers are especially useful in photoresist compositions having high UV transparency (particularly at short wavelengths, e.g., 157 nm) which are useful as base resins in resists and potentially in many other applications.
摘要:
Fluorinated polymers useful in photoresist compositions and associated processes for microlithography are described. These polymers and photoresists have a fluoroalcohol functional group that simultaneously imparts high ultraviolet (UV) transparency and developability in basic media. The polymers also have a repeat unit derived from a C1-C25 alkyl hydroxymethylacrylate comonomer, e.g., tert-butyl hydroxymethylacrylate, or a C5-C50 polycyclic alkyl acrylate in which the polycyclic group contains a hydroxy group, e.g., hydroxyadamantyl acrylate. The materials of this invention have high UV tansparency, particularly at short wavelengths, e.g., 193 nm and 157 nm, which makes them highly useful for lithography at these short wavelengths.