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    Multilayer graphene using chemical vapor deposition and method of manufacturing same
    12.
    发明授权
    Multilayer graphene using chemical vapor deposition and method of manufacturing same 有权

    公开(公告)号：US10755939B2

    公开(公告)日：2020-08-25

    申请号：US16567262

    申请日：2019-09-11

    Applicant: CENTER FOR ADVANCED SOFT ELECTRONICS ,  POSTECH ACADEMY-INDUSTRY FOUNDATION

    Inventor： Kilwon Cho ,  Min Seok Yoo ,  Hyo Chan Lee

    IPC: H01L21/28 ,  H01L21/285 ,  H01L21/02 ,  H01L21/263 ,  H01L23/532 ,  H01L29/16

    Abstract: Disclosed is a method of manufacturing multilayer graphene, including (a) contacting of a metal substrate with a nonmetal element, (b) reduction through heat treatment, and (c) chemical vapor deposition of a graphene precursor on the metal substrate containing the nonmetal element dissolved therein, thereby manufacturing multilayer graphene that is doped with the nonmetal element on the metal substrate. In the multilayer graphene thus manufactured, the number of graphene layers and the work function are simultaneously adjusted by controlling the concentration of doped nonmetal element in a thickness direction of graphene through interactions related to the reduction of the nonmetal element dissolved in a copper catalyst and the growth of graphene, and moreover, the stacking structure of graphene is maintained and the optoelectronic properties of multilayer graphene can be controlled by simultaneously regulating graphene growth and doping during the synthesis procedure without additional processing.

    THIN-FILM TRANSISTOR-BASED PRESSURE SENSOR AND METHOD OF MANUFACTURING SAME
    13.
    发明申请
    THIN-FILM TRANSISTOR-BASED PRESSURE SENSOR AND METHOD OF MANUFACTURING SAME 审中-公开

    公开(公告)号：US20190305139A1

    公开(公告)日：2019-10-03

    申请号：US16364566

    申请日：2019-03-26

    Applicant: CENTER FOR ADVANCED SOFT ELECTRONICS

    Inventor： Sanghoon BAEK ,  Sungjune JUNG ,  Jimin KWON ,  GEUNYEOL BAE ,  Kilwon CHO

    IPC: H01L29/84 ,  H01L51/05 ,  H01L51/00 ,  H01L29/786

    Abstract: Disclosed is a thin-film transistor-based pressure sensor including a gate electrode; a gate dielectric layer provided on the gate electrode; a semiconductor layer provided on the gate dielectric layer; and a source electrode and a drain electrode provided on the semiconductor layer, wherein each of the source and drain electrodes has an elastic body that includes: an elastic part having a protrusion; and a conductive part provided on a surface of the elastic part and having a conductive material. According to the pressure sensor and a method of manufacturing the same of the present invention, the elastic body coated with the conductive material is patterned to serve as the source electrode and the drain electrode of the pressure sensor whereby it is possible to drive an active matrix, drive the pressure sensor with low power, and manufacture the pressure sensor through a simple process.

    3D STATIC RAM CORE CELL HAVING VERTICALLY STACKED STRUCTURE, AND STATIC RAM CORE CELL ASSEMBLY COMPRISING SAME
    15.
    发明申请
    3D STATIC RAM CORE CELL HAVING VERTICALLY STACKED STRUCTURE, AND STATIC RAM CORE CELL ASSEMBLY COMPRISING SAME 审中-公开

    公开(公告)号：US20190006424A1

    公开(公告)日：2019-01-03

    申请号：US16066862

    申请日：2016-12-28

    Applicant: CENTER FOR ADVANCED SOFT ELECTRONICS

    Inventor： Jimin KWON ,  Sungjune JUNG ,  Jae Joon KIM ,  Kilwon CHO ,  Sujeong KYUNG

    IPC: H01L27/28 ,  H01L23/528 ,  H01L23/522 ,  H01L51/10 ,  H01L51/05 ,  H01L51/00

    Abstract: Disclosed is a 3D static RAM core cell having a vertically stacked structure, including six thin-film transistors each having a gate electrode, a source electrode and a drain electrode, the static RAM core cell including two switching thin-film transistors, each connected to a bit line and a word line to select recording and reading of data, and four data-storage thin-film transistors connected to a power supply voltage (Vdd) or a ground voltage (Vss) to record and read data, the static RAM core cell including a first transistor layer including two thin-film transistors selected from among the six thin-film transistors, a second transistor layer disposed on the first transistor layer and including two thin-film transistors selected from among the remaining four thin-film transistors, and a third transistor layer disposed on the second transistor layer and including the remaining two thin-film transistors, at least one electrode of the first transistor layer and at least one electrode of the second transistor layer being electrically connected to each other, and at least one electrode of the second transistor layer and at least one electrode of the third transistor layer being electrically connected to each other. Thereby, the static RAM core cell is configured such that organic transistors of the same type are arranged in the same plane and are vertically stacked, thus omitting a complicated patterning process for forming organic transistors of different types upon fabrication of a memory element, and also reducing the area occupied by the memory element to thereby increase the degree of integration of semiconductor circuits.

    LAMINATE HAVING POROUS ORGANIC SEMICODUCTOR THIN FILM AND CHEMICAL SENSOR COMPRISING SAME
    18.
    发明申请
    LAMINATE HAVING POROUS ORGANIC SEMICODUCTOR THIN FILM AND CHEMICAL SENSOR COMPRISING SAME 有权
    具有多孔有机半导体薄膜和包含其的化学传感器的层压板

    公开(公告)号：US20160254463A1

    公开(公告)日：2016-09-01

    申请号：US14826883

    申请日：2015-08-14

    Applicant: CENTER FOR ADVANCED SOFT ELECTRONICS

    Inventor： Kilwon CHO ,  Joon Hak OH ,  Boseok KANG ,  Moonjeong JANG ,  Yoonyoung CHUNG ,  Haena Kim ,  Sang Kyu Kwak

    IPC: H01L51/00 ,  G01N27/414

    CPC classification number: B32B3/26 ,  B32B5/16 ,  B32B27/14 ,  B32B2264/0214 ,  B32B2307/202 ,  C09D5/00 ,  H01L51/0055 ,  H01L51/0558

    Abstract: Disclosed herein is a laminate comprising: a substrate; an organic surface modifying layer disposed on the substrate; and a porous organic semiconductor layer disposed on the surface modifying layer. Onto the substrate, introduction of the organic surface modifying layer having a low surface energy, and optionally the organic intermediate layer having a low glass transition temperature controls the self assembly of the organic semiconductor layer, allowing the porous organic semiconductor layer to have high crystallinity and large crystal grains. Also, provided is a highly efficient chemical sensor comprising the laminate.

    Abstract translation: 本文公开了一种层压体，其包含：基材; 设置在所述基板上的有机表面改性层; 以及设置在表面改性层上的多孔有机半导体层。 在基板上，引入具有低表面能的有机表面改性层和任选地具有低玻璃化转变温度的有机中间层控制有机半导体层的自组装，允许多孔有机半导体层具有高结晶度， 大晶粒。 此外，提供了包括层压体的高效化学传感器。

    THERMOELECTRIC DEVICE AND METHOD OF MANUFACTURING THE SAME
    20.
    发明申请
    THERMOELECTRIC DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开

    公开(公告)号：US20180261747A1

    公开(公告)日：2018-09-13

    申请号：US15865862

    申请日：2018-01-09

    Applicant: CENTER FOR ADVANCED SOFT ELECTRONICS

    Inventor： Kil Won Cho ,  Dae Gun Kim ,  Duck Hyun Ju

    IPC: H01L35/30 ,  H01L35/34

    CPC classification number: H01L35/30 ,  H01L27/16 ,  H01L35/16 ,  H01L35/18 ,  H01L35/24 ,  H01L35/32 ,  H01L35/34

    Abstract: Disclosed is a thermoelectric device, including a flexible substrate having a zigzag configuration in which a vertical cross-section in a longitudinal direction of one surface thereof includes peaks and valleys and a thermoelectric material line positioned on the flexible substrate and configured to include a p-type thermoelectric material and any one of an n-type thermoelectric material and an electrode material, which are alternately continuously disposed, wherein any one of the n-type thermoelectric material and the electrode material is in contact with the p-type thermoelectric material at the peaks and the valleys. The thermoelectric device, having a zigzag configuration, is highly flexible and lightweight, and a thermoelectric material in film form can be utilized to realize a vertical temperature difference, and thus the thickness of the device can be freely adjusted regardless of the film thickness, thereby easily maintaining a large temperature difference even without a heat sink.

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