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11.发明授权Method of forming a relief pattern by e-beam lithography using chemical amplification, and derived articles 失效通过使用化学扩增的电子束光刻形成浮雕图案的方法和衍生制品公开(公告)号：US08470516B2
公开(公告)日：2013-06-25
申请号：US12542821
申请日：2009-08-18
申请人： Robert D. Allen , Luisa Bozano , Phillip Brock , Qinghuang Lin , Alshakim Nelson , Ratnam Sooriyakumaran
发明人： Robert D. Allen , Luisa Bozano , Phillip Brock , Qinghuang Lin , Alshakim Nelson , Ratnam Sooriyakumaran
CPC分类号： G03F7/038 , G03F7/0757 , G03F7/2059 , G03F7/40
摘要： A method of generating a relief pattern comprises disposing a resist composition on a substrate to form a film, the resist composition comprising a first silsesquioxane polymer of the formula (1): a second silsesquioxane polymer of the formula (2): and a photosensitive acid generator; patternwise exposing the film by e-beam lithography; heating the exposed film to effect crosslinking of the first polymer and second polymer in the exposed area; and developing the exposed film to form a negative relief pattern.
摘要翻译： 产生浮雕图案的方法包括将抗蚀剂组合物设置在基底上以形成膜，抗蚀剂组合物包含式（1）的第一倍半硅氧烷聚合物：式（2）的第二倍半硅氧烷聚合物：和光敏酸 发电机; 通过电子束光刻对图案进行图案曝光; 加热暴露的膜以在暴露的区域中实现第一聚合物和第二聚合物的交联; 并将曝光的胶片显影形成负浮雕图案。
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12.发明申请SURFACE MODIFIED NANOPARTICLES, METHODS OF THEIR PREPARATION, AND USES THEREOF FOR GENE AND DRUG DELIVERY 有权表面改性纳米颗粒，其制备方法及其用于基因和药物递送的用途公开(公告)号：US20120245218A1
公开(公告)日：2012-09-27
申请号：US13488940
申请日：2012-06-05
CPC分类号： C08G71/02 , A61K47/6923 , A61K47/6929 , C08G71/04
摘要： A composition comprises a surface modified nanoparticle comprising a core comprising a material selected from the group consisting of organic materials, organometallic materials, inorganic materials, metals, metal oxides, and combinations thereof; and a surface branch covalently linked to the core having the general formula (3):
摘要翻译： 组合物包含表面改性的纳米颗粒，其包含芯，其包含选自有机材料，有机金属材料，无机材料，金属，金属氧化物及其组合的材料; 和共价连接到具有通式（3）的芯的表面支链：
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公开(公告)号：US20120178925A1
公开(公告)日：2012-07-12
申请号：US13414837
申请日：2012-03-08
IPC分类号： C07D319/06 , C07D265/10
CPC分类号： C08G64/1633 , C07D319/06 , C08G63/08 , C08G63/64 , C08G64/0233 , C08G64/0241 , C08G64/025 , C08G64/38 , C08G64/42 , C08G2261/126 , Y02P20/582
摘要： A one pot method of preparing cyclic carbonyl compounds comprising an active pendant pentafluorophenyl ester group is disclosed. The cyclic carbonyl compounds can be polymerized by ring opening methods to form ROP polymers comprising repeat units comprising a side chain pentafluorophenyl ester group. Using a suitable nucleophile, the pendant pentafluorophenyl ester group can be selectively transformed into a variety of other functional groups before or after the ring opening polymerization.
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公开(公告)号：US20120172602A1
公开(公告)日：2012-07-05
申请号：US13414859
申请日：2012-03-08
IPC分类号： C07D319/06 , C07D405/12
CPC分类号： C08G64/1633 , C07D319/06 , C08G63/08 , C08G63/64 , C08G64/0233 , C08G64/0241 , C08G64/025 , C08G64/38 , C08G64/42 , C08G2261/126 , Y02P20/582
摘要： A one pot method of preparing cyclic carbonyl compounds comprising an active pendant pentafluorophenyl ester group is disclosed. The cyclic carbonyl compounds can be polymerized by ring opening methods to form ROP polymers comprising repeat units comprising a side chain pentafluorophenyl ester group. Using a suitable nucleophile, the pendant pentafluorophenyl ester group can be selectively transformed into a variety of other functional groups before or after the ring opening polymerization.
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15.发明申请公开(公告)号：US20120172559A1
公开(公告)日：2012-07-05
申请号：US13414895
申请日：2012-03-08
IPC分类号： C08G64/30
CPC分类号： C08G64/1633 , C07D319/06 , C08G63/08 , C08G63/64 , C08G64/0233 , C08G64/0241 , C08G64/025 , C08G64/38 , C08G64/42 , C08G2261/126 , Y02P20/582
摘要： A one pot method of preparing cyclic carbonyl compounds comprising an active pendant pentafluorophenyl ester group is disclosed. The cyclic carbonyl compounds can be polymerized by ring opening methods to form ROP polymers comprising repeat units comprising a side chain pentafluorophenyl ester group. Using a suitable nucleophile, the pendant pentafluorophenyl ester group can be selectively transformed into a variety of other functional groups before or after the ring opening polymerization.
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16.发明授权Photopatternable dielectric materials for BEOL applications and methods for use 有权用于BEOL应用的光图案介电材料和使用方法公开(公告)号：US08029971B2
公开(公告)日：2011-10-04
申请号：US12047435
申请日：2008-03-13
申请人： Robert D. Allen , Phillip Joe Brock , Blake W. Davis , Qinghuang Lin , Robert D. Miller , Alshakim Nelson , Ratnam Sooriyakumaran
发明人： Robert D. Allen , Phillip Joe Brock , Blake W. Davis , Qinghuang Lin , Robert D. Miller , Alshakim Nelson , Ratnam Sooriyakumaran
CPC分类号： G03F7/0757 , G03F7/0045 , G03F7/0046 , G03F7/40 , Y10S430/106 , Y10S430/115 , Y10S430/12 , Y10S430/122 , Y10S430/126
摘要： Compositions, a method, and a photopatternable blend. The compositions include a blend of a first and a second polymer. The first polymer is a substituted silsesquioxane copolymer. The second polymer is a substituted silsesquioxane polymer. The second polymer is configured to undergo chemical crosslinking with the first polymer, the second polymer, or a combination thereof, upon exposure to light, thermal energy, or a combination thereof. The compositions include a photosensitive acid generator. The method includes forming a film. The film is patternwise imaged, and at least one region is exposed to radiation. After the imaging, the film is baked, wherein at least one exposed region is rendered substantially soluble. After the baking, the film is developed, wherein a relief pattern remains. The relief pattern is exposed to radiation. The relief pattern is baked. The relief pattern is cured. A chemically amplified positive-tone photopatternable blend is also described.
摘要翻译： 组合，一种方法和一种光图案化混合物。 组合物包括第一和第二聚合物的共混物。 第一聚合物是取代的倍半硅氧烷共聚物。 第二聚合物是取代的倍半硅氧烷聚合物。 第二聚合物被配置为在暴露于光，热能或其组合时与第一聚合物，第二聚合物或其组合进行化学交联。 组合物包括光敏酸产生剂。 该方法包括形成膜。 膜被图案化成像，并且至少一个区域暴露于辐射。 在成像之后，烘烤该膜，其中至少一个曝光区域呈现基本上可溶的。 烘烤后，显影膜，其中保留有浮雕图案。 浮雕图案暴露于辐射。 浮雕图案被烘烤。 浮雕图案被修复。 还描述了化学放大的正色调可光图案化混合物。
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17.发明申请SURFACE MODIFIED NANOPARTICLES, METHODS OF THEIR PREPARATION, AND USES THEREOF FOR GENE AND DRUG DELIVERY 有权表面改性纳米颗粒，其制备方法及其用于基因和药物递送的用途公开(公告)号：US20110182996A1
公开(公告)日：2011-07-28
申请号：US12695991
申请日：2010-01-28
IPC分类号： A61K47/34 , C08F283/02 , C08G63/91 , C08G71/02 , C08G69/48 , C08G75/00 , A61K31/7088 , C08G69/08 , C08F291/00 , A61K9/50 , C12N5/00
CPC分类号： C08G71/02 , A61K47/6923 , A61K47/6929 , C08G71/04
摘要： A composition comprises a surface modified nanoparticle comprising a core comprising a material selected from the group consisting of organic materials, organometallic materials, inorganic materials, metals, metal oxides, and combinations thereof; and a surface branch covalently linked to the core having the general formula (3):
摘要翻译： 组合物包含表面改性的纳米颗粒，其包含芯，其包含选自有机材料，有机金属材料，无机材料，金属，金属氧化物及其组合的材料; 和共价连接到具有通式（3）的芯的表面支链：
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18.发明申请METHOD OF USE FOR PHOTOPATTERNABLE DIELECTRIC MATERIALS FOR BEOL APPLICATIONS 有权用于BEOL应用的光电介质材料的使用方法公开(公告)号：US20080286467A1
公开(公告)日：2008-11-20
申请号：US11750356
申请日：2007-05-18
申请人： Robert D. Allen , Phillip Brock , Blake W. Davis , Qinghuang Lin , Robert D. Miller , Alshakim Nelson , Ratnam Sooriyakumaran
发明人： Robert D. Allen , Phillip Brock , Blake W. Davis , Qinghuang Lin , Robert D. Miller , Alshakim Nelson , Ratnam Sooriyakumaran
CPC分类号： H01L21/3122 , G03F7/0382 , G03F7/0757 , G03F7/40 , H01L21/02137 , H01L21/02282 , H01L21/02348 , H01L21/76802 , H01L21/76814 , H01L21/76825 , H01L21/76826 , H01L21/76828 , Y10S430/106 , Y10S430/108 , Y10S430/12 , Y10S430/121 , Y10S430/122 , Y10S430/126
摘要： A method. The method includes dip coating a film of a composition on a silicon wafer substrate. The composition includes a polymer blend of a first polymer and a second polymer. The first polymer is a substituted silsesquioxane copolymer. The second polymer is a polysilsesquioxane having silanol end groups. The composition includes a photosensitive acid generator, an organic base, and an organic crosslinking agent. The film is patternwise imaged and at least one region is exposed to radiation having a wavelength of about 248 nanometers. The film is baked, resulting in inducing crosslinking in the film. The film is developed resulting in removal of base-soluble unexposed regions of the film, wherein a relief pattern from the film remains. The relief pattern is cured at a temperature between about 300° C. and about 450° C., and the curing utilizes a combination of thermal treatment with UV radiation.
摘要翻译： 一个方法。 该方法包括在硅晶片衬底上浸涂组合物的膜。 该组合物包括第一聚合物和第二聚合物的聚合物共混物。 第一聚合物是取代的倍半硅氧烷共聚物。 第二聚合物是具有硅烷醇端基的聚倍半硅氧烷。 该组合物包括光敏酸产生剂，有机碱和有机交联剂。 膜被图案化成像，并且至少一个区域暴露于波长为约248纳米的辐射。 该膜被烘烤，导致膜中引起交联。 显影该膜，导致去除基底溶解的膜的未曝光区域，其中残留有膜的浮雕图案。 浮雕图案在约300℃和约450℃之间的温度下固化，并且固化利用与UV辐射的热处理的组合。
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19.发明授权Interconnect structure and method for fabricating on-chip interconnect structures by image reversal 有权通过图像反转制造片上互连结构的互连结构和方法公开(公告)号：US09054160B2
公开(公告)日：2015-06-09
申请号：US13088054
申请日：2011-04-15
申请人： Robert L. Bruce , Qinghuang Lin , Alshakim Nelson , Satyanarayana V. Nitta , Dirk Pfeiffer , Jitendra S. Rathore
发明人： Robert L. Bruce , Qinghuang Lin , Alshakim Nelson , Satyanarayana V. Nitta , Dirk Pfeiffer , Jitendra S. Rathore
IPC分类号： H01L21/4763 , H01L21/768 , H01L23/522 , H01L23/532
CPC分类号： H01L23/5283 , H01L21/76801 , H01L21/76804 , H01L21/76808 , H01L21/7682 , H01L21/76825 , H01L21/76826 , H01L21/76828 , H01L21/76832 , H01L21/76835 , H01L23/5222 , H01L23/5329 , H01L23/53295 , H01L29/0649 , H01L2221/1031 , H01L2924/0002 , H01L2924/00
摘要： An interconnect structure includes a patterned and cured dielectric layer located directly on a surface of a patterned permanent antireflective coating. The patterned and cured dielectric layer and the permanent antireflective coating form shaped openings. The shaped openings include an inverse profile which narrows towards a top of the shaped openings. A conductive structure fills the shaped openings wherein the patterned and cured dielectric layer and the permanent antireflective coating each have a conductively filled region.
摘要翻译： 互连结构包括直接位于图案化的永久抗反射涂层的表面上的图案化和固化的电介质层。 图案化和固化的介电层和永久性抗反射涂层形成成形的开口。 成形的开口包括朝向成形开口的顶部变窄的反向轮廓。 导电结构填充成形开口，其中图案化和固化的介电层和永久性抗反射涂层各自具有导电填充区域。
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公开(公告)号：US20130281515A1
公开(公告)日：2013-10-24
申请号：US13449643
申请日：2012-04-18
申请人： Daniel Joseph Coady , Amanda Catherine Engler , Kazuki Fukushima , James Lupton Hedrick , Shaoqiong Liu , Hareem Tariq Maune , Alshakim Nelson , Jed Walter Pitera , Yi Yan Yang
发明人： Daniel Joseph Coady , Amanda Catherine Engler , Kazuki Fukushima , James Lupton Hedrick , Shaoqiong Liu , Hareem Tariq Maune , Alshakim Nelson , Jed Walter Pitera , Yi Yan Yang
IPC分类号： A61K48/00 , C12N5/07 , C07C69/96 , A61P31/04 , A61P31/10 , C07C275/42 , A61K31/17 , B82Y5/00 , B82Y30/00
摘要： A cationic bis-urea compound is disclosed of formula (1): wherein: each m is independently an integer of 0 to 4, each k is independently 0 or 1, each Z′ is a monovalent radical independently selected from the group consisting of hydroxyl (*—OH), carboxyl (*—COOH), cyano (*—CN), nitro (*—NO2), sulfonate (*—SO3−), trifluoromethyl (*—CF3), halides, amine groups, ketone groups, alkyl groups comprising 1 to 6 carbons, alkoxy groups comprising 1 to 6 carbons, thioether groups comprising 1 to 6 carbons, and combinations thereof, each L′ is independently a divalent alkylene group comprising 1 to 6 carbons, wherein a *-[-L′-]k- is a single bond when k is 0, each Y′ is independently a monovalent non-polymeric radical comprising a positive charged amine, and each X′ is independently a negative charged counterion.
摘要翻译： 公开了式（1）的阳离子双脲化合物：其中：每个m独立地为0至4的整数，每个k独立地为0或1，每个Z'是独立地选自羟基的一价基团 （* -OH），羧基（* -COOH），氰基（* -CN），硝基（* -NO 2），磺酸酯（* -SO 3 - ），三氟甲基 包含1至6个碳的烷基，包含1至6个碳原子的烷氧基，含1至6个碳的硫醚基及其组合，每个L'独立地为包含1至6个碳的二价亚烷基，其中a * - [ - L ' - ] k-当k为0时为单键，每个Y'独立地为包含带正电胺的单价非聚合基团，并且每个X'独立地为负电荷的抗衡离子。
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