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    THROUGH-SEMICONDUCTOR-VIA CAPPING LAYER AS ETCH STOP LAYER
    173.
    发明申请
    THROUGH-SEMICONDUCTOR-VIA CAPPING LAYER AS ETCH STOP LAYER 有权

    公开(公告)号：US20170221951A1

    公开(公告)日：2017-08-03

    申请号：US15014787

    申请日：2016-02-03

    Applicant: OmniVision Technologies, Inc.

    Inventor： Yuanwei Zheng ,  Gang Chen ,  Duli Mao ,  Dyson Tai

    IPC: H01L27/146

    CPC classification number: H01L27/14636 ,  H01L27/14621 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/14689 ,  H01L27/1469

    Abstract: A method of image sensor fabrication includes providing a semiconductor material, an insulation layer, and a logic layer, where the semiconductor material includes a plurality of photodiodes. A through-semiconductor-via is formed which extends from the semiconductor material, through the insulation layer, and into the logic layer. The through-semiconductor-via is capped with a capping layer. A metal pad is disposed in a first trench in the semiconductor material. Insulating material is deposited on the capping layer, and in the first trench in the semiconductor material. A resist is deposited in a second trench in the insulating material, and the second trench in the insulating material is aligned with the metal pad. The insulating material is removed to expose the capping layer, and a portion of the capping layer disposed proximate to the plurality of photodiodes is also removed. A metal grid is formed proximate to the plurality of photodiodes.

    Image sensor with enhanced quantum efficiency
    175.
    发明授权
    Image sensor with enhanced quantum efficiency 有权
    具有增强量子效率的图像传感器

    公开(公告)号：US09565405B2

    公开(公告)日：2017-02-07

    申请号：US14612961

    申请日：2015-02-03

    Applicant: OMNIVISION TECHNOLOGIES, INC.

    Inventor： Gang Chen ,  Dominic Massetti ,  Chih-Wei Hsiung ,  Arvind Kumar ,  Yuanwei Zheng ,  Duli Mao ,  Dyson H. Tai

    IPC: H04N9/04 ,  H01L27/146 ,  H04N5/3745

    CPC classification number: H04N9/045 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14647 ,  H04N5/37457

    Abstract: A back side illuminated image sensor includes a pixel array including semiconductor material, and image sensor circuitry disposed on a front side of the semiconductor material to control operation of the pixel array. A first pixel includes a first doped region disposed proximate to a back side of the semiconductor material and extends into the semiconductor material a first depth to reach the image sensor circuitry. A second pixel with a second doped region is disposed proximate to the back side of the semiconductor material and extends into the semiconductor material a second depth which is less than the first depth. A third doped region is disposed between the second doped region and the image sensor circuitry on the front side of the semiconductor material. The third doped region is electrically isolated from the first doped region and the second doped region.

    Abstract translation: 背面照明图像传感器包括包括半导体材料的像素阵列和设置在半导体材料的前侧上以控制像素阵列的操作的图像传感器电路。 第一像素包括靠近半导体材料的背面设置的第一掺杂区域，并延伸到半导体材料中以到达图像传感器电路的第一深度。 具有第二掺杂区域的第二像素设置在半导体材料的背面附近并且延伸到半导体材料中的比第一深度小的第二深度。 第三掺杂区域设置在半导体材料的前侧上的第二掺杂区域和图像传感器电路之间。 第三掺杂区域与第一掺杂区域和第二掺杂区域电隔离。

    Conductive trench isolation
    176.
    发明授权
    Conductive trench isolation 有权

    公开(公告)号：US09240431B1

    公开(公告)日：2016-01-19

    申请号：US14790330

    申请日：2015-07-02

    Applicant: OMNIVISION TECHNOLOGIES, INC.

    Inventor： Yuanwei Zheng ,  Gang Chen ,  Duli Mao ,  Dyson H. Tai ,  Chih-Wei Hsiung ,  Arvind Kumar

    IPC: H01L21/00 ,  H01L27/146

    CPC classification number: H01L27/14687 ,  H01L21/76224 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14643 ,  H01L27/14685 ,  H01L27/14689

    Abstract: An image sensor including a plurality of photodiodes disposed in a semiconductor layer and a plurality of deep trench isolation regions disposed in the semiconductor layer. The plurality of deep trench isolation regions include: (1) an oxide layer disposed on an inner surface of the plurality of deep trench isolation regions and (2) a conductive fill disposed in the plurality of deep trench isolation regions where the oxide layer is disposed between the semiconductor layer and the conductive fill. A plurality of pinning wells is also disposed in the semiconductor layer, and the plurality of pinning wells in combination with the plurality of deep trench isolation regions separate individual photodiodes in the plurality of photodiodes. A fixed charge layer is disposed on the semiconductor layer, and the plurality of deep trench isolation regions are disposed between the plurality of pinning wells and the fixed charge layer.

    Backside-illuminated photosensor array with white, yellow and red-sensitive elements
    177.
    发明授权
    Backside-illuminated photosensor array with white, yellow and red-sensitive elements 有权
    具有白色，黄色和红色敏感元件的背面照明光电传感器阵列

    公开(公告)号：US09231015B2

    公开(公告)日：2016-01-05

    申请号：US13625458

    申请日：2012-09-24

    Applicant: OmniVision Technologies, Inc.

    Inventor： Gang Chen ,  Duli Mao ,  Dyson Hsinchih Tai

    IPC: H04N5/222 ,  H01L27/146 ,  H04N5/225 ,  H04N5/376 ,  H04N5/247 ,  H01L31/101 ,  H01L31/09

    CPC classification number: H01L27/14645 ,  H01L27/1464 ,  H01L31/09 ,  H01L31/1013 ,  H04N5/222 ,  H04N5/2251 ,  H04N5/247 ,  H04N5/376

    Abstract: A monolithic backside-sensor-illumination (BSI) image sensor has a sensor array is tiled with a multiple-pixel cells having a first pixel sensor primarily sensitive to red light, a second pixel sensor primarily sensitive to red and green light, and a third pixel sensor having panchromatic sensitivity, the pixel sensors laterally adjacent each other. The image sensor determines a red, a green, and a blue signal comprising by reading the red-sensitive pixel sensor of each multiple-pixel cell to determine the red signal, reading the sensor primarily sensitive to red and green light to determine a yellow signal and subtracting the red signal to determine a green signal. The image sensor reads the panchromatic-sensitive pixel sensor to determine a white signal and subtracts the yellow signal to provide the blue signal.

    Abstract translation: 单片背面传感器照明（BSI）图像传感器具有传感器阵列，其具有具有主要对红光敏感的第一像素传感器的多像素单元，对红色和绿色光敏感的第二像素传感器，以及第三像素传感器 像素传感器具有全色灵敏度，像素传感器横向相邻。 图像传感器确定红色，绿色和蓝色信号，其包括通过读取每个多像素单元的红色敏感像素传感器来确定红色信号，读取对红色和绿色光敏感的传感器以确定黄色信号 并减去红色信号以确定绿色信号。 图像传感器读取全色敏感像素传感器以确定白色信号，并减去黄色信号以提供蓝色信号。

    Lateral light shield in backside illuminated imaging sensors
    178.
    发明授权
    Lateral light shield in backside illuminated imaging sensors 有权
    背面照明成像传感器的侧面防护罩

    公开(公告)号：US09177982B2

    公开(公告)日：2015-11-03

    申请号：US14319807

    申请日：2014-06-30

    Applicant: OMNIVISION TECHNOLOGIES, INC.

    Inventor： Duli Mao ,  Dyson H. Tai ,  Vincent Venezia ,  Yin Qian ,  Gang Chen ,  Howard E. Rhodes

    IPC: H01L27/146

    CPC classification number: H01L27/1462 ,  H01L27/14623 ,  H01L27/1464 ,  H01L27/14685

    Abstract: A backside illuminated image sensor includes a semiconductor layer and a trench disposed in the semiconductor layer. The semiconductor layer has a frontside surface and a backside surface. The semiconductor layer includes a light sensing element of a pixel array disposed in a sensor array region of the semiconductor layer. The pixel array is positioned to receive external incoming light through the backside surface of the semiconductor layer. The semiconductor layer also includes a light emitting element disposed in a periphery circuit region of the semiconductor layer external to the sensor array region. The trench is disposed in the semiconductor layer between the light sensing element and the light emitting element.

    Abstract translation: 背面照明图像传感器包括设置在半导体层中的半导体层和沟槽。 半导体层具有前表面和背面。 半导体层包括设置在半导体层的传感器阵列区域中的像素阵列的光感测元件。 像素阵列被定位成接收穿过半导体层的背面的外部入射光。 半导体层还包括设置在传感器阵列区域外部的半导体层的外围电路区域中的发光元件。 沟槽设置在光感测元件和发光元件之间的半导体层中。

    IMAGE SENSOR PIXEL CELL WITH SWITCHED DEEP TRENCH ISOLATION STRUCTURE
    179.
    发明申请
    IMAGE SENSOR PIXEL CELL WITH SWITCHED DEEP TRENCH ISOLATION STRUCTURE 有权
    具有开关深度分离隔离结构的图像传感器像素单元

    公开(公告)号：US20150236058A1

    公开(公告)日：2015-08-20

    申请号：US14704493

    申请日：2015-05-05

    Applicant: OMNIVISION TECHNOLOGIES, INC.

    Inventor： Sing-Chung Hu ,  Rongsheng Yang ,  Gang Chen ,  Howard E. Rhodes ,  Sohei Manabe ,  Dyson H. Tai

    IPC: H01L27/146 ,  H04N5/378

    CPC classification number: H01L27/1463 ,  H01L27/14601 ,  H01L27/14607 ,  H01L27/14612 ,  H01L27/1464 ,  H01L27/14643 ,  H04N5/378

    Abstract: A pixel cell includes a photodiode disposed in an epitaxial layer in a first region of semiconductor material to accumulate image charge. A floating diffusion is disposed in a well region disposed in the epitaxial layer in the first region. A transfer transistor is coupled to selectively transfer the image charge from the photodiode to the floating diffusion. A deep trench isolation (DTI) structure disposed in the semiconductor material. The DTI structure isolates the first region of the semiconductor material on one side of the DTI structure from a second region of the semiconductor material on an other side of the DTI structure. The DTI structure includes a doped semiconductor material disposed inside the DTI structure that is selectively coupled to a readout pulse voltage in response to the transfer transistor selectively transferring the image charge from the photodiode to the floating diffusion.

    Abstract translation: 像素单元包括设置在半导体材料的第一区域中的外延层中以累积图像电荷的光电二极管。 浮置扩散部设置在设置在第一区域的外延层中的阱区域中。 耦合转移晶体管以选择性地将图像电荷从光电二极管转移到浮动扩散。 设置在半导体材料中的深沟槽隔离（DTI）结构。 DTI结构将DTI结构的一侧上的半导体材料的第一区域与DTI结构的另一侧上的半导体材料的第二区域隔离。 DTI结构包括设置在DTI结构内部的掺杂半导体材料，其被选择性地耦合到读出脉冲电压，响应于传输晶体管选择性地将图像电荷从光电二极管传输到浮动扩散。

    Conductive trench isolation
    180.
    发明授权
    Conductive trench isolation 有权
    导电沟隔离

    公开(公告)号：US09111993B1

    公开(公告)日：2015-08-18

    申请号：US14465054

    申请日：2014-08-21

    Applicant: OMNIVISION TECHNOLOGIES, INC.

    Inventor： Yuanwei Zheng ,  Gang Chen ,  Duli Mao ,  Dyson H. Tai ,  Chih-Wei Hsiung ,  Arvind Kumar

    IPC: H01L21/76 ,  H01L21/762

    CPC classification number: H01L27/14687 ,  H01L21/76224 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14643 ,  H01L27/14685 ,  H01L27/14689

    Abstract: An image sensor including a plurality of photodiodes disposed in a semiconductor layer and a plurality of deep trench isolation regions disposed in the semiconductor layer. The plurality of deep trench isolation regions include: (1) an oxide layer disposed on an inner surface of the plurality of deep trench isolation regions and (2) a conductive fill disposed in the plurality of deep trench isolation regions where the oxide layer is disposed between the semiconductor layer and the conductive fill. A plurality of pinning wells is also disposed in the semiconductor layer, and the plurality of pinning wells in combination with the plurality of deep trench isolation regions separate individual photodiodes in the plurality of photodiodes. A fixed charge layer is disposed on the semiconductor layer, and the plurality of deep trench isolation regions are disposed between the plurality of pinning wells and the fixed charge layer.

    Abstract translation: 包括设置在半导体层中的多个光电二极管和设置在半导体层中的多个深沟槽隔离区域的图像传感器。 多个深沟槽隔离区域包括：（1）设置在多个深沟槽隔离区域的内表面上的氧化物层和（2）设置在多个深沟槽隔离区域中的导电填料，其中设置氧化物层 在半导体层和导电填料之间。 多个钉扎阱也设置在半导体层中，并且多个钉扎阱与多个深沟槽隔离区域组合分离多个光电二极管中的各个光电二极管。 固定电荷层设置在半导体层上，多个深沟槽隔离区设置在多个钉扎阱和固定电荷层之间。

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