公开(公告)号：US06225801B1

公开(公告)日：2001-05-01

申请号：US09231566

申请日：1999-01-14

Applicant: Sungho Jin ,  Hareesh Mavoori

Inventor： Sungho Jin ,  Hareesh Mavoori

IPC: G01R3302

CPC classification number: H03H1/02 ,  H01F1/407 ,  H01L43/10 ,  H03F3/45475 ,  H03F2203/45591 ,  Y10T428/26 ,  Y10T428/32

Abstract: In accordance with the invention, an electrical or electronic circuit is provided with one or more components of magnetoresistive material and disposed within the gap of a programmable and latchable magnet. This provides the circuit with programmable and latchable resistivity, particularly useful in transformers, amplifiers and frequency tuners.

Abstract translation: 根据本发明，电气或电子电路设置有磁阻材料的一个或多个部件并且设置在可编程和可锁定磁体的间隙内。 这为电路提供了可编程和可锁定的电阻率，特别适用于变压器，放大器和调频器。

公开(公告)号：US06205264B1

公开(公告)日：2001-03-20

申请号：US09059858

申请日：1998-04-14

Applicant: Sungho Jin ,  Hareesh Mavoori

Inventor： Sungho Jin ,  Hareesh Mavoori

IPC: G02B612

CPC classification number: G02B6/0218 ,  B23K35/0233 ,  B23K35/0244 ,  B23K35/26 ,  B23K35/327 ,  G02B6/4238 ,  G02B6/4239 ,  G02B6/424 ,  G02B6/4245 ,  G02B6/4266 ,  H01L2224/32014 ,  H01L2224/73253 ,  H01L2224/73257 ,  Y10T428/12486

Abstract: Aligned Optoelectronic assembly with improved dimensional stability is disclosed. The assembly is carried out with a bonding material, either a solder or an adhesive, which contain insoluble, non-coarsening dispersoid particles. New solder compositions having enhanced mechanical properties are described. Relatively inert particles having a diameter of 5000 nm or less are dispersed in a solder material having an average grain size of approximately 10,000 nm or less to produce such solder compositions. The dispersed particles act as physical barriers in solders substantially impeding the motion of grain boundaries and inhibiting grain growth during thermal and stress cycling which substantially inhibits coarsening. As a consequence, the optoelectronic device assembly according to the invention exhibit substantially improved dimensional stability, with the rate of creep deformation at the joint reduced by a factor of at least two.

Abstract translation: 公开了具有改进尺寸稳定性的对准光电组件。 该组件用粘合材料（焊料或粘合剂）进行，其包含不溶性，非粗化的分散质颗粒。 描述了具有增强的机械性能的新的焊料组合物。 将具有5000nm以下直径的相对惰性的粒子分散在平均粒径为约10000nm以下的焊料中，制作这样的焊料组合物。 分散的颗粒在焊料中作为物理屏障，其基本上阻碍晶界的运动并且抑制热和应力循环期间的晶粒生长，其基本上抑制粗化。 因此，根据本发明的光电子器件组件显示出显着改善的尺寸稳定性，而在接头处的蠕变变形速率降低至少两倍。

公开(公告)号：US06147407A

公开(公告)日：2000-11-14

申请号：US49256

申请日：1998-03-27

Applicant: Sungho Jin ,  Ruichen Liu ,  Chien-Shing Pai ,  Wei Zhu

Inventor： Sungho Jin ,  Ruichen Liu ,  Chien-Shing Pai ,  Wei Zhu

IPC: C23C14/06 ,  C23C14/22 ,  C23C14/34 ,  H01L21/312 ,  H01L23/532 ,  H01L23/48

CPC classification number: C23C14/225 ,  C23C14/0605 ,  C23C14/3464 ,  H01L21/3127 ,  H01L23/5329 ,  H01L2924/0002

Abstract: The invention provides a device containing a low .kappa., hydrogen-free a-C:F layer with good adhesion and thermal stability. It was found that the combination of desirable properties was attainable by a relatively easy process, as compared to processes that utilize gaseous sources, such as CVD. Specifically, the a-C:F layer is formed by sputter deposition, using only solid sources for the fluorine and carbon, and in the absence of any intentionally-added hydrogen-containing source. The sputtering is performed such that the layer contains 20 to 60 at. % fluorine, and also, advantageously, such that the a-C:F exhibits a bandgap of about 2.0 eV or greater. The a-C:F layer formed by the process of the invention exhibits a dielectric constant, at 1 MHz and room temperature, of 3.0 or less, advantageously 2.5 or less, and more advantageously 2.1 or less, along with being thermally stable up to at least 350.degree. C., advantageously 450.degree. C., and exhibiting a stress of about 100 MPa or less, in absolute value.

Abstract translation: 本发明提供含有低κ，无氢a-C：F层的装置，其具有良好的粘附性和热稳定性。 已经发现，与使用气体源（例如CVD）的方法相比，期望性质的组合可通过相对容易的方法获得。 具体地，通过溅射沉积形成a-C：F层，仅使用固体源作为氟和碳，并且在没有任何有意添加的含氢源的情况下。 进行溅射使得该层含有20至60at。 ％氟，并且还有利地使得a-C：F表现出约2.0eV或更大的带隙。 通过本发明的方法形成的aC：F层在1MHz和室温下表现出3.0或更小，有利地为2.5或更小，更优选为2.1或更小的介电常数，并且至少热稳定 350℃，有利地450℃，绝对值为约100MPa以下。

公开(公告)号：US6102582A

公开(公告)日：2000-08-15

申请号：US157967

申请日：1998-09-21

Applicant: Rolando Patricio Espindola ,  Sungho Jin ,  Hareesh Mavoori

Inventor： Rolando Patricio Espindola ,  Sungho Jin ,  Hareesh Mavoori

IPC: G02B6/26 ,  G02B6/35 ,  G02B6/38 ,  G02B6/42

CPC classification number: G02B6/3506 ,  G02B6/266 ,  G02B6/3886 ,  G02B6/4225 ,  G02B6/3558 ,  G02B6/3572 ,  G02B6/3594

Abstract: In accordance with the invention, a device for controlling alignment between two optical devices comprises a mobile magnet attached to a mobile optical device and a plurality of programmable magnets for moving the mobile magnet (and attached optical device) in relation to a second optical device. In preferred embodiments, the programmable magnets are latchable.

Abstract translation: 根据本发明，用于控制两个光学装置之间的对准的装置包括附接到移动光学装置的移动磁体和用于相对于第二光学装置移动可移动磁体（和附接的光学装置）的多个可编程磁体。 在优选实施例中，可编程磁体是可锁定的。

公开(公告)号：US5999546A

公开(公告)日：1999-12-07

申请号：US158672

申请日：1998-09-22

Applicant: Rolando Patricio Espindola ,  Sungho Jin ,  Hareesh Mavoori

Inventor： Rolando Patricio Espindola ,  Sungho Jin ,  Hareesh Mavoori

IPC: H01S3/063 ,  H01S3/067 ,  H01S3/1055 ,  H01S5/06 ,  H01S5/14 ,  H01S3/10

CPC classification number: H01S3/1055 ,  G02B6/022 ,  H01S3/0675 ,  H01S3/063 ,  H01S5/0607 ,  H01S5/146

Abstract: In accordance with the invention, a tunable laser uses magnets to apply mechanical strain on fiber Bragg grating reflectors or laser cavities in order to induce a change in lasing wavelength. The strain can be tensile or compressive. The tunable laser comprises a laser cavity including a laser material for emitting light in response to stimulating light and two end reflectors one or more of which can be a Bragg grating. In preferred embodiments, latchable programmable magnets vary the grating periodicity and/or cavity length in a controlled, accurate manner so as to achieve desired tuning of the laser over a broad range of wavelengths. The latchable magnets hold the wavelength in the shifted position without the need for sustained power.

Abstract translation: 根据本发明，可调激光器使用磁体在光纤布拉格光栅反射器或激光腔上施加机械应变，以引起激光波长的变化。 该应变可以是拉伸或压缩。 可调谐激光器包括激光腔，其包括用于响应于刺激光发射光的激光材料和两个端部反射器，其中一个或多个可以是布拉格光栅。 在优选实施例中，可锁定可编程磁体以受控的，精确的方式改变光栅周期和/或腔长度，以便在宽的波长范围内实现对激光器的期望的调谐。 可锁定磁体将波长保持在移动位置，而不需要持续的功率。

公开(公告)号：US5987200A

公开(公告)日：1999-11-16

申请号：US957953

申请日：1997-10-27

Applicant: Debra Anne Fleming ,  Sungho Jin ,  David Wilfred Johnson, Jr. ,  Paul Joseph Lemaire ,  Thomas H. Tiefel, deceased

Inventor： Debra Anne Fleming ,  Sungho Jin ,  David Wilfred Johnson, Jr. ,  Paul Joseph Lemaire ,  Thomas H. Tiefel, deceased

IPC: G02B6/34 ,  G02F1/01 ,  H04J14/00

CPC classification number: G02B6/2932 ,  G02B6/02204 ,  G02B6/29322 ,  G02B6/29383 ,  G02B6/29395 ,  G02F1/0147 ,  G02F2201/307

Abstract: A tunable fiber grating comprises a temperature-sensitive body secured to a fiber having a fiber grating region for transmitting thermally-induced strain to the grating. The amount of strain and hence the degree of wavelength tuning are controlled by adjusting the temperature of the temperature-sensitive body, wherein the extent of adjustment is preferably pre-determined according to feedback from a wavelength detector. Large thermal strains obtainable with the present invention allow a wide range of wavelength tuning with a relatively small and convenient temperature change near ambient temperature. In a preferred embodiment, the temperature-sensitive body is cylindrical and comprised of a nickel-titanium alloy bonded to the grating. In alternative arrangements, the thermal strain effect can be amplified. An add/drop multiplexer employing the tunable gratings is also described.

Abstract translation: 可调光纤光栅包括固定到具有用于将热致应变传递到光栅的光纤光栅区域的光纤的感温体。 通过调节温度敏感体的温度来控制应变量和因此的波长调谐程度，其中调节范围优选根据来自波长检测器的反馈来预先确定。 通过本发明可获得的大的热应变允许在环境温度附近具有相对较小且方便的温度变化的宽范围的波长调谐。 在优选实施例中，感温体是圆柱形的并且由结合到光栅的镍 - 钛合金构成。 在替代布置中，可以放大热应变效应。 还描述了采用可调谐光栅的分插复用器。

公开(公告)号：US5977697A

公开(公告)日：1999-11-02

申请号：US6347

申请日：1998-01-13

Applicant: Sungho Jin ,  Gregory Peter Kochanski ,  Wei Zhu

Inventor： Sungho Jin ,  Gregory Peter Kochanski ,  Wei Zhu

IPC: H01J31/12 ,  H01J1/304 ,  H01J9/02 ,  H01J23/06 ,  H01J29/04 ,  H01J1/30

CPC classification number: H01J23/06 ,  H01J1/3042 ,  H01J9/025 ,  H01J2201/30403 ,  H01J2201/30457 ,  H01J61/0677 ,  H01J61/0737

Abstract: Improved diamond particle emitters, useful for flat panel displays, are fabricated by suspending nanometer-sized ultra-fine particles in a solution, applying the suspension as a coating onto a conducting substrate such as n-type Si or metal, subjecting the coated substrate to a plasma of hydrogen, and applying a thin, conformal diamond overcoating layer onto the particles. The resulting emitters show excellent emission properties, such as extremely low turn-on voltage, good uniformity and high current densities. In particular, the electron emitters are capable of producing electron emission current densities of at least 0.1 mA/,mm.sup.2 at extremely low vacuum electric fields of 0.2-3.0 V/.mu.m V/.mu.m. These field values are about an order of magnitude lower than exhibited by the best defective CVD diamond and almost two orders of magnitude lower than p-type semiconducting diamond. It is further found that the emission characteristics remain the same even after the plasma treated diamond surface is exposed to air for several months.

Abstract translation: 用于平板显示器的改进的金刚石颗粒发射器通过将纳米尺寸的超细颗粒悬浮在溶液中来制造，将悬浮液作为涂层施涂到诸如n型Si或金属的导电基材上，使经涂覆的基材 氢的等离子体，并将薄的保形金刚石外涂层施加到颗粒上。 所得到的发射体显示出优异的发射特性，例如极低的导通电压，良好的均匀性和高的电流密度。 特别地，电子发射体在0.2-3.0V / m V /μm的极低真空电场下能够产生至少0.1mA / mm2的电子发射电流密度。 这些场值比由最好的有缺陷的CVD金刚石显示的低一个数量级，比p型半导体金刚石低两个数量级。 进一步发现即使在等离子体处理的金刚石表面暴露于空气几个月之后，发射特性也保持不变。

公开(公告)号：US5975922A

公开(公告)日：1999-11-02

申请号：US36902

申请日：1998-03-09

Applicant: Sungho Jin

Inventor： Sungho Jin

IPC: H01L23/492 ,  H01R13/24 ,  H05K3/32 ,  H01R4/58

CPC classification number: H01R13/2414 ,  H01L23/4922 ,  H05K3/325 ,  H01L2924/0002 ,  H01L2924/09701

Abstract: A device having a composite interconnection medium that reduces or avoids long-term reliability problems exhibited by current media, containing a first component and a second component, e.g., circuit boards, and an intermediate area between the first component and the second component. The intermediate area contains electrically conductive particles in a non-conductive matrix and compression-limiting bodies that are either located within the matrix or separately attached to one of the components. The conductive particles are arranged in chains of two or more particles across the thickness of the matrix to provide electrical connection between the first component and second component. The compression-limiting bodies substantially reduce the likelihood that dimensional changes in the components, e.g., due to warping or servicing, will stress or deform the matrix to an extent that unacceptably affects the electrical conductivity through the intermediate area.

Abstract translation: 一种具有复合互连介质的装置，其减少或避免了包含第一部件和第二部件（例如电路板）的当前介质所呈现的长期可靠性问题，以及第一部件和第二部件之间的中间区域。 中间区域包含非导电基质中的导电颗粒和位于基质内或单独附着于组分之一的压缩限制体。 导电颗粒在矩阵的厚度上布置成两个或更多个颗粒的链，以提供第一部件和第二部件之间的电连接。 压缩限制体基本上减少了组件中的尺寸变化（例如由于翘曲或维修）将使基体发生应力或变形到不可接受地影响通过中间区域的电导率的程度的可能性。

公开(公告)号：US5965197A

公开(公告)日：1999-10-12

申请号：US187885

申请日：1998-11-06

Applicant: Sungho Jin ,  Thomas Henry Tiefel

Inventor： Sungho Jin ,  Thomas Henry Tiefel

IPC: B23K35/02 ,  B23K35/14 ,  B23K35/26 ,  B23K35/32 ,  C22C11/06 ,  C22C13/00 ,  H01L21/60 ,  H05K3/34 ,  B05D1/12

CPC classification number: H05K3/3484 ,  B23K35/0244 ,  B23K35/26 ,  B23K2201/36 ,  B23K35/262 ,  B23K35/268 ,  B23K35/327 ,  H01L2224/114 ,  H01L2224/116 ,  H01L2924/01322 ,  H01L2924/10253 ,  H05K2201/0209 ,  H05K2203/033 ,  H05K2203/0405 ,  H05K2203/043 ,  H05K3/3478

Abstract: New solder compositions having enhanced mechanical properties are disclosed. Relatively inert particles having a diameter of 2000 nm or less are dispersed in a solder material having an average grain size of 500 nm or less to produce such solder compositions. The dispersed particles act as physical barriers substantially impeding the motion of grain boundaries and inhibiting grain growth during thermal and stress cycling which substantially inhibits coarsening. As a consequence, the solder composition exhibits an advantageous level of superplasticity that is substantially resistant to joint failure. Methods for forming articles using such solder compositions is also disclosed.

Abstract translation: 公开了具有增强的机械性能的新的焊料组合物。 将具有2000nm以下直径的相对惰性的粒子分散在平均粒径为500nm以下的焊料中，制成这样的焊料组合物。 分散的颗粒充当实质上阻碍晶界运动并抑制热和应力循环期间的晶粒生长的物理屏障，其基本上抑制粗化。 因此，焊料组合物显示出优异的超塑性水平，其基本上抵抗接合失效。 还公开了使用这种焊料组合物形成制品的方法。

公开(公告)号：US5744195A

公开(公告)日：1998-04-28

申请号：US752234

申请日：1996-11-19

Applicant: Sungho Jin ,  Gregory Peter Kochanski ,  Lawrence Seibles ,  Wei Zhu

Inventor： Sungho Jin ,  Gregory Peter Kochanski ,  Lawrence Seibles ,  Wei Zhu

IPC: C30B29/04 ,  C30B30/02 ,  C30B31/20 ,  H01J1/304 ,  H01J9/02 ,  H01J29/04 ,  H01J31/12 ,  H01L21/205 ,  C23C16/26 ,  B05D3/06

CPC classification number: H01J1/3042 ,  H01J2201/30403 ,  H01J2201/30457 ,  H01J2329/00

Abstract: Applicants have discovered methods for making, treating and using diamonds which substantially enhance their capability for low voltage emission. Specifically, applicants have discovered that defect-rich diamonds--diamonds grown or treated to increase the concentration of defects--have enhanced properties of low voltage emission. Defect-rich diamonds are characterized in Raman spectroscopy by a diamond peak at 1332 cm.sup.-1 broadened by a full width at half maximum .DELTA.K in the range 5-15 cm.sup.-1 (and preferably 7-11 cm.sup.-1). Such defect-rich diamonds can emit electron current densities of 0.1 mA/mm.sup.2 or more at a low applied field of 25 V/.mu.m or less. Particularly advantageous structures use such diamonds in an array of islands or particles each less than 10 .mu.m in diameter at fields of 15 V/.mu.m or less.

Abstract translation: 申请人已经发现了用于制造，处理和使用金刚石的方法，其大大增强了它们的低电压发射能力。 具体来说，申请人已经发现，生长或处理以增加缺陷浓度的富含缺陷的钻石 - 金刚石具有增强的低电压发射性能。 富含缺陷的金刚石的特征在于在1332cm-1处的金刚石峰，在5-15cm -1（优选7-11cm -1）的范围内以最大DELTA K的全宽度加宽的拉曼光谱。 这样的富含缺陷的金刚石可以在25V /μm以下的低施加电场下发射0.1mA / mm 2以上的电子密度。 特别有利的结构在15V /μm或更小的场中使用直径小于10μm的岛或颗粒阵列中的这种金刚石。