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151.发明申请INCREASED RELIABILITY FOR A CONTACT STRUCTURE TO CONNECT AN ACTIVE REGION WITH A POLYSILICON LINE 有权连接活动区域与多晶硅线的接触结构的可靠性提高公开(公告)号：US20090085030A1
公开(公告)日：2009-04-02
申请号：US12056362
申请日：2008-03-27
申请人： Carsten Peters , Ralf Richter , Kai Frohberg
发明人： Carsten Peters , Ralf Richter , Kai Frohberg
CPC分类号： H01L23/485 , H01L21/28518 , H01L21/76889 , H01L21/76895 , H01L21/76897 , H01L22/34 , H01L2924/0002 , H01L2924/00
摘要： By forming a direct contact structure connecting, for instance, a polysilicon line with an active region on the basis of an increased amount of metal silicide by removing the sidewall spacers prior to the silicidation process, a significantly increased etch selectivity may be achieved during the contact etch stop layer opening. Hence, undue etching of the highly doped silicon material of the active region would be suppressed. Additionally or alternatively, an appropriately designed test structure is disclosed, which may enable the detection of electrical characteristics of contact structures formed in accordance with a specified manufacturing sequence and on the basis of specific design criteria.
摘要翻译： 通过形成直接接触结构，例如通过在硅化处理之前去除侧壁间隔物，在增加量的金属硅化物的基础上连接有源区域，可以在接触期间实现显着增加的蚀刻选择性 蚀刻停止层开口。 因此，有效区域的高掺杂硅材料的过度蚀刻将被抑制。 附加地或替代地，公开了适当设计的测试结构，其可以检测根据特定制造顺序形成的接触结构的电特性，并且可以基于特定的设计标准。
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152.发明申请ENHANCED TRANSISTOR PERFORMANCE OF N-CHANNEL TRANSISTORS BY USING AN ADDITIONAL LAYER ABOVE A DUAL STRESS LINER IN A SEMICONDUCTOR DEVICE 有权通过在半导体器件中使用双应力衬垫上的附加层来增强N沟道晶体管的晶体管性能公开(公告)号：US20080296693A1
公开(公告)日：2008-12-04
申请号：US12017175
申请日：2008-01-21
申请人： Ralf Richter , Andy Wei , Roman Boschke
发明人： Ralf Richter , Andy Wei , Roman Boschke
IPC分类号： H01L27/088 , H01L21/469
CPC分类号： H01L21/823807 , H01L29/7843
摘要： By forming an additional dielectric material, such as silicon nitride, after patterning dielectric liners of different intrinsic stress, a significant increase of performance of N-channel transistors may be obtained while substantially not contributing to a performance loss of the P-channel transistor.
摘要翻译： 通过在构成不同固有应力的介电衬垫的图案之后形成诸如氮化硅的附加电介质材料，可以获得N沟道晶体管的性能的显着提高，同时基本上不会导致P沟道晶体管的性能损失。
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153.发明申请METHOD OF FORMING A METAL LAYER OVER A PATTERNED DIELECTRIC BY ELECTROLESS DEPOSITION USING A SELECTIVELY PROVIDED ACTIVATION LAYER 审中-公开使用选择性激活层通过电沉积形成图形电介质的金属层的方法公开(公告)号：US20080182409A1
公开(公告)日：2008-07-31
申请号：US11782987
申请日：2007-07-25
申请人： Robert Seidel , Axel Preusse , Ralf Richter
发明人： Robert Seidel , Axel Preusse , Ralf Richter
IPC分类号： H01L21/445
CPC分类号： H01L21/76879 , H01L21/76843 , H01L21/76844 , H01L21/76849 , H01L21/76859 , H01L21/76865 , H01L21/76867 , H01L21/76874
摘要： By forming an activation/nucleation layer selectively at a bottom of an opening, efficient electroless deposition techniques may be used for forming contacts, vias and trenches of advanced semiconductor devices. By selectively providing the activation material, a self-aligned bottom-to-top fill behavior may be obtained.
摘要翻译： 通过在开口的底部选择性地形成活化/成核层，可以使用有效的无电沉积技术来形成先进的半导体器件的触点，通路和沟槽。 通过选择性地提供活化材料，可以获得自对准的底对顶填充行为。
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154.发明申请METHOD FOR REDUCING RESIST POISONING DURING PATTERNING OF STRESSED NITROGEN-CONTAINING LAYERS IN A SEMICONDUCTOR DEVICE 有权用于在半导体器件中压制含氮化物层的方式减少耐药性的方法公开(公告)号：US20080081481A1
公开(公告)日：2008-04-03
申请号：US11743502
申请日：2007-05-02
申请人： Kai Frohberg , Ralf Richter , Thomas Werner
发明人： Kai Frohberg , Ralf Richter , Thomas Werner
IPC分类号： H01L21/311
CPC分类号： H01L21/823807 , H01L21/0223 , H01L21/02238 , H01L21/02252 , H01L21/31662 , H01L29/665 , H01L29/6659 , H01L29/7843 , Y02P80/30
摘要： By providing a silicon cap layer on a compressive silicon nitride layer, the diffusion of nitrogen into sensitive resist material may be efficiently reduced, while the silicon may be converted into a highly compressive silicon dioxide in a later manufacturing stage. Consequently, yield loss due to contact failures during the formation of semiconductor devices requiring differently stressed silicon nitride layers may be reduced.
摘要翻译： 通过在压缩氮化硅层上设置硅覆盖层，可以有效地降低氮气到敏感抗蚀剂材料中的扩散，同时可以在随后的制造阶段将硅转化为高度压缩的二氧化硅。 因此，可能会降低在形成需要不同应力的氮化硅层的半导体器件期间由于接触故障导致的屈服损失。
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公开(公告)号：US20080006197A1
公开(公告)日：2008-01-10
申请号：US11667478
申请日：2005-12-02
摘要： In a device and a method for tracking an underwater vehicle (11), a platform (13) having a tracking apparatus (15) for determining instantaneous positions of the underwater vehicle (11) is inserted into the water and its submerged position is spatially stabilized. To this end, the platform (13) has maneuver drives (18, 19) which act horizontally and vertically and are arranged in control loops.
摘要翻译： 在用于跟踪水下航行器（11）的装置和方法中，具有用于确定水下航行器（11）的瞬时位置的跟踪装置（15）的平台（13）被插入到水中，并且其淹没位置被空间稳定 。 为此，平台（13）具有水平和垂直运动并且被布置在控制回路中的操纵驱动器（18,19）。
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156.发明申请TECHNIQUE FOR NON-DESTRUCTIVE METAL DELAMINATION MONITORING IN SEMICONDUCTOR DEVICES 有权半导体器件非破坏性金属分层监测技术公开(公告)号：US20070178691A1
公开(公告)日：2007-08-02
申请号：US11536730
申请日：2006-09-29
申请人： Ralf Richter , Carsten Peters , Holger Schuehrer
发明人： Ralf Richter , Carsten Peters , Holger Schuehrer
IPC分类号： H01L21/4763
CPC分类号： H01L23/544 , H01L21/7684 , H01L2223/54453 , H01L2924/0002 , H01L2924/00
摘要： By providing large area metal plates in combination with respective peripheral areas of increased adhesion characteristics, delamination events may be effectively monitored substantially without negatively affecting the overall performance of the semiconductor device during processing and operation. In some illustrative embodiments, dummy vias may be provided at the periphery of a large area metal plate, thereby allowing delamination in the central area while substantially avoiding a complete delamination of the metal plate. Consequently, valuable information with respect to mechanical characteristics of the metallization layer as well as process flow parameters may be efficiently monitored.
摘要翻译： 通过提供大面积金属板与相应的周边区域结合增加的粘合特性，可以有效地监测分层事件，而不会在加工和操作过程中不影响半导体器件的整体性能。 在一些示例性实施例中，可以在大面积金属板的周边设置虚拟通孔，从而允许中心区域分层，同时基本避免金属板的完全分层。 因此，可以有效地监测关于金属化层的机械特性以及工艺流程参数的有价值的信息。
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157.发明申请公开(公告)号：US20070161225A1
公开(公告)日：2007-07-12
申请号：US11533793
申请日：2006-09-21
申请人： Carsten Peters , Kai Frohberg , Ralf Richter
发明人： Carsten Peters , Kai Frohberg , Ralf Richter
IPC分类号： H01L21/76 , H01L21/4763 , H01L21/44
CPC分类号： H01L21/823481 , H01L21/76897 , H01L21/823475
摘要： By forming an additional doped region with increased junction depth at areas in which contact regions may connect to drain and source regions, any contact irregularities may be embedded into the additional doped region, thereby reducing the risk for leakage currents or short circuits between the drain and source region and the well region that may be conventionally caused by the contact irregularity. Moreover, additionally or alternatively, the surface topography of the semiconductor region and the adjacent isolation trench may be modified prior to the formation of metal silicide regions and contact plugs to enhance the lithography procedure for forming respective contact openings in an interlayer dielectric material. For this purpose, the isolation trench may be brought to an equal or higher level compared to the adjacent semiconductor region.
摘要翻译： 通过在接触区域可以连接到漏极和源极区域的区域处形成具有增加的结深度的附加掺杂区域，可以将任何接触不规则物嵌入到附加掺杂区域中，从而降低漏极和漏极之间的漏电流或短路的风险 源极区域和通常由接触不规则引起的阱区域。 此外，附加地或替代地，可以在形成金属硅化物区域和接触插塞之前修改半导体区域和相邻隔离沟槽的表面形貌，以增强在层间电介质材料中形成相应接触开口的光刻过程。 为此，与相邻的半导体区域相比，隔离沟槽可以达到相同或更高的水平。
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158.发明授权Method for fabricating a semiconductor memory having charge trapping memory cells and semiconductor substrate 失效一种制造具有电荷捕获存储单元和半导体衬底的半导体存储器的方法公开(公告)号：US07015095B2
公开(公告)日：2006-03-21
申请号：US10856414
申请日：2004-05-27
申请人： Mathias Krause , Christoph Ludwig , Jens-Uwe Sachse , Joachim Deppe , Ralf Richter , Christoph Kleint , Ricardo Mikalo
发明人： Mathias Krause , Christoph Ludwig , Jens-Uwe Sachse , Joachim Deppe , Ralf Richter , Christoph Kleint , Ricardo Mikalo
IPC分类号： H01L21/336
CPC分类号： H01L27/11568 , H01L27/115
摘要： Electrically conductive material is introduced into interspaces between the word lines (2) and is partially removed using a mask (6) in such a way that residual portions (7) of the conductive material in each case fill a section of the relevant interspace and produce an electrical contact with source/drain regions (15). With further portions of the conductive material, it is possible to form alignment marks for the fabrication process.
摘要翻译： 导电材料被引入到字线（2）之间的间隙中，并且使用掩模（6）部分地移除，使得导电材料的残留部分（7）在每种情况下填充相关间隙的一部分并产生 与源/漏区（15）的电接触。 对于导电材料的另外部分，可以形成用于制造工艺的对准标记。
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公开(公告)号：US06885164B2
公开(公告)日：2005-04-26
申请号：US10938606
申请日：2004-09-13
CPC分类号： B60H1/00835 , B60L1/02 , H02K23/66 , Y02T10/641
摘要： A motor actuator of a climate control system includes an specialized electric motor with a motor housing enclosing an encoder ring on a motor shaft having a plurality of opposite encoder-segment sets with encoder brushes on the housing wiping the encoder ring and thereby forming an encoder circuit through opposite segments of the encoder-segment sets. The electric motor further includes power and encoder terminals positioned externally of the motor housing with at least one power terminal being electrically coupled to one of the power brushes and at least one encoder terminal being electrically coupled to one of the encoder brushes. A control head of the system includes a continuity pulse counter coupled to the at least one encoder terminal for creating pulses representative of impedance in the encoder circuit and, therefore, movement of the motor shaft and a damper linked thereto.
摘要翻译： 气候控制系统的电动机执行器包括专用电动机，其具有电动机壳体，该电动机壳体在电动机轴上包围编码器环，该电动机轴具有多个相对的编码器段组，其中编码器电刷在壳体上擦拭编码器环，从而形成编码器电路 通过编码器段组的相反段。 电动机还包括位于电动机壳体外部的动力和编码器端子，其中至少一个电力端子电耦合到电力电刷中的一个，并且至少一个编码器端子电耦合到编码器电刷之一。 该系统的控制头包括连接到至少一个编码器端子的连续脉冲计数器，用于产生代表编码器电路中的阻抗的脉冲，并因此产生与电动机轴和与之相连的阻尼器的运动。
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