公开(公告)号：US11886124B2

公开(公告)日：2024-01-30

申请号：US17971361

申请日：2022-10-21

Applicant: ASML NETHERLANDS B.V.

Inventor： Duan-Fu Stephen Hsu

IPC: G03F7/00 ,  G03F1/24

CPC classification number: G03F7/705 ,  G03F1/24 ,  G03F7/70125 ,  G03F7/70441

Abstract: A method to improve a lithographic process for imaging a portion of a patterning device pattern onto a substrate using a lithographic projection having an illumination system and projection optics, the method including: (1) obtaining a simulation model that models projection of radiation by the projection optics, wherein the simulation model models an effect of an obscuration in the projection optics, and configuring, based on the model, the portion of the patterning device pattern, and/or (2) obtaining a simulation model that models projection of radiation by the projection optics, wherein the simulation model models an anamorphic demagnification of radiation by the projection optics, and configuring, based on the model, the portion of the patterning device pattern taking into account an anamorphic manufacturing rule or anamorphic manufacturing rule ratio.

公开(公告)号：US20240027915A1

公开(公告)日：2024-01-25

申请号：US18453594

申请日：2023-08-22

Applicant: ASML NETHERLANDS B.V.

Inventor： Raymond Wilhelmus Louis LAFARRE ,  Sjoerd Nicolaas Lambertus Donders ,  Nicolaas TEN KATE ,  Nina Vladimirovna DZIOMKINA ,  Yogesh Pramod KARADE ,  Elisabeth Corinne RODENBURG

IPC: G03F7/00 ,  B23K26/354 ,  B23K26/342 ,  B22F10/00 ,  B22F10/20 ,  B23Q3/18 ,  G03F7/20 ,  B05D3/06 ,  B05D5/00 ,  B33Y10/00 ,  B33Y80/00 ,  B22F7/06

CPC classification number: G03F7/70341 ,  B23K26/354 ,  B23K26/342 ,  G03F7/70416 ,  G03F7/707 ,  G03F7/70708 ,  B22F10/00 ,  B22F10/20 ,  B23Q3/18 ,  G03F7/20 ,  G03F7/70716 ,  B05D3/06 ,  B05D5/00 ,  G03F7/70733 ,  B33Y10/00 ,  B33Y80/00 ,  B22F7/062 ,  G03F7/708 ,  B22F10/25

Abstract: An object holder for a lithographic apparatus has a main body having a surface. A plurality of burls to support an object are formed on the surface or in apertures of a thin-film stack. At least one of the burls is formed by laser-sintering. At least one of the burls formed by laser-sintering may be a repair of a damaged burl previously formed by laser-sintering or another method.

公开(公告)号：US20240027913A1

公开(公告)日：2024-01-25

申请号：US18255261

申请日：2021-12-02

Applicant: ASML Netherlands B.V. ,  ASML Holding N.V.

Inventor： Sergei SOKOLOV ,  Simon Reinald HUISMAN ,  Jin LIAN ,  Sebastianus Adrianus GOORDEN ,  Muhsin ERALP ,  Henricus Petrus Maria PELLEMANS ,  Justin Lloyd KREUZER

IPC: G03F7/00

CPC classification number: G03F7/70091 ,  G03F7/70625 ,  G03F7/70633

Abstract: A metrology system (400) includes a multi-source radiation system. The multi-source radiation system includes a waveguide device (502) and the multi-source radiation system is configured to generate one or more beams of radiation. The metrology system (400) further includes a coherence adjuster (500) including a multimode waveguide device (504). The multimode waveguide device (504) includes an input configured to receive the one or more beams of radiation from the multi-source radiation system (514) and an output (518) configured to output a coherence adjusted beam of radiation for irradiating a target (418). The metrology system (400) further includes an actuator (506) coupled to the waveguide device (502) and configured to actuate the waveguide device (502) so as to change an impingement characteristic of the one or more beams of radiation at the input of the multimode waveguide device (504).

公开(公告)号：US11880971B2

公开(公告)日：2024-01-23

申请号：US17671522

申请日：2022-02-14

Applicant: ASML Netherlands B.V.

Inventor： Wei Fang ,  Zhao-Li Zhang ,  Jack Jau

IPC: G06K9/00 ,  G06T7/00 ,  G06V10/44 ,  G06V10/50 ,  G06V10/46

CPC classification number: G06T7/001 ,  G06T7/0004 ,  G06V10/44 ,  G06V10/50 ,  G06T2207/10004 ,  G06T2207/10061 ,  G06T2207/30148 ,  G06V10/467 ,  G06V2201/06

Abstract: An inspection method includes the following steps: identifying a plurality of patterns within an image; and comparing the plurality of patterns with each other for measurement values thereof. The above-mentioned inspection method uses the pattern within the image as a basis for comparison; therefore, measurement values of the plurality of pixels constructing the pattern can be processed with statistical methods and then compared, and the false rate caused by variation of a few pixels is decreased significantly. An inspection system implementing the above-mentioned method is also disclosed.

公开(公告)号：US11880640B2

公开(公告)日：2024-01-23

申请号：US18118657

申请日：2023-03-07

Applicant: ASML NETHERLANDS B.V.

Inventor： Chrysostomos Batistakis ,  Scott Anderson Middlebrooks ,  Sander Frederik Wuister

IPC: G06F7/50 ,  G06F30/28 ,  G03F7/00 ,  G06F119/14

CPC classification number: G06F30/28 ,  G03F7/705 ,  G06F2119/14

Abstract: A method involving obtaining a resist deformation model for simulating a deformation process of a pattern in resist, the resist deformation model being a fluid dynamics model configured to simulate an intrafluid force acting on the resist, performing, using the resist deformation model, a computer simulation of the deformation process to obtain a deformation of the developed resist pattern for an input pattern to the resist deformation model, and producing electronic data representing the deformation of the developed resist pattern for the input pattern.

公开(公告)号：US11880144B2

公开(公告)日：2024-01-23

申请号：US17603812

申请日：2020-03-25

Applicant: ASML NETHERLANDS B.V.

Inventor： Sander Jeroen Hermanussen ,  Johannes Petrus Martinus Bernardus Vermeulen ,  Hans Butler ,  Bas Jansen ,  Michael Marinus Anna Steur

IPC: G03F7/00 ,  H01L21/687

CPC classification number: G03F7/70725 ,  G03F7/70708 ,  G03F7/70783 ,  H01L21/6875 ,  H01L21/68735 ,  H01L21/68785

Abstract: An object table configured to hold an object on a holding surface, the object table including: a main body; a plurality of burls extending from the main body, end surfaces of the burls defining the holding surface; an actuator assembly; and a further actuator assembly, wherein the actuator assembly is configured to deform the main body to generate a long stroke out-of-plane deformation of the holding surface based on shape information of the object that is to be held and the further actuator assembly is configured to generate a short stroke out-of-plane deformation of the holding surface.

公开(公告)号：US11875101B2

公开(公告)日：2024-01-16

申请号：US17616368

申请日：2020-05-25

Applicant: ASML NETHERLANDS B.V.

Inventor： Jen-Shiang Wang ,  Feng Chen ,  Matteo Alessandro Francavilla ,  Jan Wouter Bijlsma

IPC: G06F30/30 ,  G06F30/398 ,  G03F7/00 ,  G06F30/392 ,  G06F30/27 ,  G06F119/18

CPC classification number: G06F30/398 ,  G03F7/705 ,  G06F30/27 ,  G06F30/392 ,  G06F2119/18

Abstract: A patterning process modeling method includes determining, with a front end of a process model, a function associated with process physics and/or chemistry of an operation within a patterning process flow; and determining, with a back end of the process model, a predicted wafer geometry. The back end includes a volumetric representation of a target area on the wafer. The predicted wafer geometry is determined by applying the function from the front end to manipulate the volumetric representation of the wafer. The volumetric representation of the wafer may be generated using volumetric dynamic B-trees. The volumetric representation of the wafer may be manipulated using a level set method. The function associated with the process physics and/or chemistry of the operation within the patterning process flow may be a velocity/speed function. Incoming flux on a modeled surface of the wafer may be determined using ray tracing.

公开(公告)号：US11874103B2

公开(公告)日：2024-01-16

申请号：US17412525

申请日：2021-08-26

Applicant: ASML NETHERLANDS B.V.

Inventor： Franciscus Godefridus Casper Bijnen ,  Junichi Kanehara ,  Stefan Carolus Jacobus Antonius Keij ,  Thomas Augustus Mattaar ,  Petrus Franciscus Van Gils

IPC: G01B11/27

CPC classification number: G01B11/272

Abstract: In order to improve the throughput performance and/or economy of a measurement apparatus, the present disclosure provides a metrology apparatus including: a first measuring apparatus; a second measuring apparatus; a first substrate stage configured to hold a first substrate and/or a second substrate; a second substrate stage configured to hold the first substrate and/or the second substrate; a first substrate handler configured to handle the first substrate and/or the second substrate; and a second substrate handler configured to handle the first substrate and/or the second substrate, wherein the first substrate is loaded from a first, second or third FOUP, wherein the second substrate is loaded from the first, second or third FOUP, wherein the first measuring apparatus is an alignment measuring apparatus, and wherein the second measuring apparatus is a level sensor, a film thickness measuring apparatus or a spectral reflectance measuring apparatus.

公开(公告)号：US20240012341A1

公开(公告)日：2024-01-11

申请号：US18252294

申请日：2021-10-14

Applicant: ASML Netherlands B.V.

Inventor： Gustaaf Galein VAN EDEN ,  Cung Vuong NGUYEN ,  Ksenia Sergeevna MAKARENKO

IPC: G03F7/00 ,  H01L21/683

CPC classification number: G03F7/70708 ,  H01L21/6833

Abstract: An electrostatic clamp for holding an object by electrostatic force is disclosed. The electrostatic clamp comprises a dielectric member having a plurality of conductive burls extending from a surface to define a plane in which the object is held, and a conductive element extending between and connecting the plurality of burls. The conductive element is disposed within one or more trenches formed on the surface of the dielectric member. Also disclosed is a method of manufacturing the electrostatic clamp.

公开(公告)号：US20240012339A1

公开(公告)日：2024-01-11

申请号：US18255310

申请日：2021-12-08

Applicant: ASML Netherlands B.V.

Inventor： Simon Gijsbert Josephus MATHIJSSEN ,  Arie Jeffrey DEN BOEF

IPC: G03F7/00

CPC classification number: G03F7/70625 ,  G03F7/70633 ,  G03F7/70683

Abstract: Disclosed is method of determining at least one homogeneity metric describing homogeneity of an etched trench on a substrate formed by a lithographic manufacturing process. The method comprises obtaining one or more images of the etched trench, wherein each of said one or more images comprises a spatial representation of one or more parameters of scattered radiation as detected by a detector or camera following scattering and/or diffraction from the etched trench; and measuring homogeneity along the length of the etched trench on said one or more images to determine said at least one homogeneity metric.