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公开(公告)号：US20160244323A1
公开(公告)日：2016-08-25
申请号：US15144896
申请日：2016-05-03
Applicant: Asia Pacific Microsystems, Inc.
Inventor： Jerwei Hsieh
IPC: B81B7/00
CPC classification number: B81B7/0038 , B81B7/0058 , B81B2201/032 , B81C1/00238 , B81C1/00817 , B81C1/00825 , B81C2201/053 , B81C2201/056 , B81C2203/0785
Abstract: An integrated MEMS device is provided. The integrated MEMS device comprises a circuit chip and a device chip. The circuit chip has a patterned first bonding layer disposed thereon, the bonding layer being composed of a conductive material/materials. The device chip has a first structural layer and a second structural layer, the first structural layer being connected to the second structural layer and the first bonding layer of the circuit chip, and being sandwiched between the second structural layer and the circuit chip. A plurality of hermetic spaces are enclosed by the first structural layer, the second structural layer, the first bonding layer and the circuit chip.
Abstract translation: 提供集成的MEMS器件。 集成MEMS器件包括电路芯片和器件芯片。 电路芯片具有设置在其上的图案化第一接合层，接合层由导电材料/材料构成。 器件芯片具有第一结构层和第二结构层，第一结构层连接到电路芯片的第二结构层和第一结合层，并夹在第二结构层和电路芯片之间。 第一结构层，第二结构层，第一结合层和电路芯片包围多个封闭空间。
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公开(公告)号：US20160173001A1
公开(公告)日：2016-06-16
申请号：US14968635
申请日：2015-12-14
Inventor： Sergiu Langa , Holger Conrad , Harald Schenk , Michael Stolz
CPC classification number: H02N1/006 , B81B3/0021 , B81B2201/032 , B81B2203/0118 , B81B2203/0127
Abstract: A micromechanical device with electrostatically caused deflection by a plate capacitor extending along and spaced apart from the neutral fiber of the deflectable element is improved with regard to its manufacturing complexity and/or with regard to its operating characteristics, such as, for example, maximum voltage applicable or deflectability, by using a continuous insulation layer between the distal and proximal electrodes of the plate capacitor, or else the proximal electrode is structured so as to have gaps at the segment boundaries where the distal electrode is mechanically fixed so as to be laterally spaced apart from the distal electrode. Both procedures avoid the problems of generating a roughness of the surface of the proximal electrode facing the distal electrode, as would otherwise be necessitated by etching an insulation layer for providing spacers between the distal and proximal electrodes at the segment boundaries.
Abstract translation: 关于其制造复杂性和/或关于其工作特性（例如最大电压），改进了静电引起由可偏转元件的中性纤维延伸并间隔开的平板电容器偏转的微机械装置 通过在平板电容器的远端和近端电极之间使用连续的绝缘层，或者近端电极被构造成在末端电极被机械地固定以便横向隔开的段边界处具有间隙 远离远端电极。 两种方法避免了产生面向远端电极的近侧电极表面的粗糙度的问题，如通过在分段边界处的远端和近端电极之间蚀刻用于提供间隔物的绝缘层所必需的。
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公开(公告)号：US09359193B2
公开(公告)日：2016-06-07
申请号：US14165752
申请日：2014-01-28
Applicant: Asia Pacific Microsystems, Inc.
Inventor： Jerwei Hsieh
IPC: H01L21/4763 , B81C1/00 , B81B7/00
CPC classification number: B81B7/0038 , B81B7/0058 , B81B2201/032 , B81C1/00238 , B81C1/00817 , B81C1/00825 , B81C2201/053 , B81C2201/056 , B81C2203/0785
Abstract: An integrated MEMS device and its manufacturing method are provided. In the manufacturing method, the sacrificial layer is used to integrate the MEMS wafer and the circuit wafer. The advantage of the present invention comprises preventing films on the circuit wafer from being damaged during process. By the manufacturing method, a mechanically and thermally stable structure material, for example: monocrystalline silicon and polysilicon, can be used. The integrated MEMS device manufactured can also possess the merit of planar top-surface topography with high fill factor. The manufacturing method is especially suitable for manufacturing MEMS array device.
Abstract translation: 提供集成的MEMS器件及其制造方法。 在制造方法中，牺牲层用于集成MEMS晶片和电路晶片。 本发明的优点包括防止电路晶片上的膜在加工过程中被损坏。 通过制造方法，可以使用机械和热稳定的结构材料，例如：单晶硅和多晶硅。 制造的集成MEMS器件也可以具有高填充因子的平面顶表面形貌的优点。 该制造方法特别适用于制造MEMS阵列器件。
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公开(公告)号：US09193580B1
公开(公告)日：2015-11-24
申请号：US14531843
申请日：2014-11-03
Inventor： Henry A. Sodano , Aneesh K. Venkata
CPC classification number: B81B3/0021 , B81B2201/032 , B81C1/0019 , B81C3/005 , G01P15/0922 , H01L41/1136 , H01L41/31 , H02N2/18
Abstract: A nano-electromechanical system comprises piezoelectric vertically aligned BaTiO3 nanowire arrays for energy-harvesting applications, sensors, and other applications. The aligned piezoelectric nanowire arrays provide highly accurate nano-electromechanical system-based dynamic sensor with a wide operating bandwidth and unity coherence and energy harvesters at low frequencies. The growth of vertically aligned (B45-mm long) barium titanate nanowire arrays is realized through a hydrothermal synthesis.
Abstract translation: 纳米机电系统包括用于能量收集应用，传感器和其它应用的压电垂直排列的BaTiO3纳米线阵列。 对准的压电纳米线阵列提供高精度的基于纳米机电系统的动态传感器，具有宽的工作带宽和低频的单位相干和能量收集器。 通过水热合成实现垂直取向（B45-mm）钛酸钡纳米线阵列的生长。
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125.发明申请公开(公告)号：US20150298965A1
公开(公告)日：2015-10-22
申请号：US14480051
申请日：2014-09-08
Applicant: INVENSENSE, INC.
Inventor： Julius Ming-Lin Tsai , Michael J. Daneman
CPC classification number: B81B7/007 , B81B3/0029 , B81B2201/032 , B81B2207/012 , B81B2207/07 , B81C1/00182 , B81C1/00269 , B81C1/00301 , B81C2201/013 , B81C2201/019 , B81C2203/0109 , B81C2203/0792
Abstract: A micro-electro-mechanical system device is disclosed. The micro-mechanical system device comprises a first silicon substrate comprising: a handle layer comprising a first surface and a second surface, the second surface comprises a cavity; an insulating layer deposited over the second surface of the handle layer; a device layer having a third surface bonded to the insulating layer and a fourth surface; a piezoelectric layer deposited over the fourth surface of the device layer; a metal conductivity layer disposed over the piezoelectric layer; a bond layer disposed over a portion of the metal conductivity layer; and a stand-off formed on the first silicon substrate; wherein the first silicon substrate is bonded to a second silicon substrate, comprising: a metal electrode configured to form an electrical connection between the metal conductivity layer formed on the first silicon substrate and the second silicon substrate.
Abstract translation: 公开了一种微机电系统装置。 微机械系统装置包括第一硅衬底，其包括：手柄层，包括第一表面和第二表面，所述第二表面包括空腔; 沉积在手柄层的第二表面上的绝缘层; 具有结合到绝缘层的第三表面和第四表面的器件层; 沉积在器件层的第四表面上的压电层; 设置在所述压电层上的金属导电层; 设置在所述金属导电层的一部分上的接合层; 以及在所述第一硅衬底上形成的间隔件; 其中所述第一硅衬底接合到第二硅衬底，包括：金属电极，被配置为在所述第一硅衬底上形成的所述金属传导层与所述第二硅衬底之间形成电连接。
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Patent Agency Ranking
公开(公告)号：US20150274514A1
公开(公告)日：2015-10-01
申请号：US14165752
申请日：2014-01-28
Applicant: Asia Pacific Microsystems, Inc.
Inventor： Jerwei Hsieh
CPC classification number: B81B7/0038 , B81B7/0058 , B81B2201/032 , B81C1/00238 , B81C1/00817 , B81C1/00825 , B81C2201/053 , B81C2201/056 , B81C2203/0785
Abstract: An integrated MEMS device and its manufacturing method are provided. In the manufacturing method, the sacrificial layer is used to integrate the MEMS wafer and the circuit wafer. The advantage of the present invention comprises preventing films on the circuit wafer from being damaged during process. By the manufacturing method, a mechanically and thermally stable structure material, for example: monocrystalline silicon and polysilicon, can be used. The integrated MEMS device manufactured can also possess the merit of planar top-surface topography with high fill factor. The manufacturing method is especially suitable for manufacturing MEMS array device.
Abstract translation: 提供集成的MEMS器件及其制造方法。 在制造方法中，牺牲层用于集成MEMS晶片和电路晶片。 本发明的优点包括防止电路晶片上的膜在加工过程中被损坏。 通过制造方法，可以使用机械和热稳定的结构材料，例如：单晶硅和多晶硅。 制造的集成MEMS器件也可以具有高填充因子的平面顶表面形貌的优点。 该制造方法特别适用于制造MEMS阵列器件。
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127.发明授权Tunable and switchable resonator and filter structures in single crystal piezoelectric MEMS devices using bimorphs 有权使用双压电晶片的单晶压电MEMS器件中的可调谐和可切换谐振器和滤波器结构公开(公告)号：US09117593B2
公开(公告)日：2015-08-25
申请号：US14071173
申请日：2013-11-04
Applicant: RF Micro Devices, Inc.
Inventor： Kushal Bhattacharjee
CPC classification number: H01G5/18 , B81B3/0086 , B81B2201/018 , B81B2201/0271 , B81B2201/032 , H03H9/02275 , H03H9/02409 , H03H9/2405 , H03H9/2463 , H03H9/462 , H03H9/467 , H03H2009/241
Abstract: A MEMS device includes a substrate, one or more anchors formed on a first surface of the substrate, and a piezoelectric layer suspended over the first surface of the substrate by the one or more anchors. Notably, the piezoelectric layer is a bimorph including a first bimorph layer and a second bimorph layer. A first electrode may be provided on a first surface of the piezoelectric layer facing the first surface of the substrate, such that the first electrode is in contact with the first bimorph layer of the piezoelectric layer. A second electrode may be provided on a second surface of the piezoelectric layer opposite the substrate, such that the second electrode is in contact with the second bimorph layer of the piezoelectric layer. The second electrode may include a first conducting section and a second conducting section, which are inter-digitally dispersed on the second surface.
Abstract translation: MEMS器件包括衬底，形成在衬底的第一表面上的一个或多个锚固体和通过一个或多个锚固件悬挂在衬底的第一表面上的压电层。 值得注意的是，压电层是包括第一双晶片层和第二双晶片层的双晶片。 第一电极可以设置在面对基板的第一表面的压电层的第一表面上，使得第一电极与压电层的第一双压电晶片层接触。 第二电极可以设置在与衬底相对的压电层的第二表面上，使得第二电极与压电层的第二双压电晶片层接触。 第二电极可以包括第一导电部分和第二导电部分，其在数字上分散在第二表面上。
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128.发明授权Microactuators based on insulator-to-metal transition materials and method of using the same 有权基于绝缘体 - 金属过渡材料的微型制动器及其使用方法公开(公告)号：US08835861B1
公开(公告)日：2014-09-16
申请号：US13070506
申请日：2011-03-24
Applicant: Rafmag Cabrera , Felix E. Fernandez , Armando Rua , Nelson Sepulveda
Inventor： Rafmag Cabrera , Felix E. Fernandez , Armando Rua , Nelson Sepulveda
CPC classification number: B81B3/0024 , B81B2201/032 , G01J5/40 , G01J2005/0077
Abstract: The invention utilizes the changes in physical properties of materials during a solid-solid phase transition in order to actuate microactuators. The substantial changes in properties during insulator-to-metal transitions (IMTs) of some materials are useful for controlling purposes. Methods of using the microactuators are also explained.
Abstract translation: 本发明在固 - 固相转变期间利用材料的物理性质的变化，以便致动微致动器。 在某些材料的绝缘体 - 金属转变（IMT）期间，性质的实质变化对于控制目的是有用的。 还说明了使用微致动器的方法。
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129.发明授权Electrothermal microactuator for large vertical displacement without tilt or lateral shift 有权电热微致动器用于垂直位移大，无倾斜或侧向偏移公开(公告)号：US08776514B2
公开(公告)日：2014-07-15
申请号：US12743499
申请日：2008-12-15
Applicant: Lei Wu , Huikai Xie
Inventor： Lei Wu , Huikai Xie
CPC classification number: B81B3/0024 , B81B2201/032 , B81B2201/047 , B81B2203/053
Abstract: A microactuator for displacing a platform vertically with respect to a substrate includes a first rigid frame, a first flexible bimorph beam connecting the first frame to the substrate, a second rigid frame, a second flexible bimorph beam connecting the second frame to the first frame, and a third flexible bimorph beam connecting a platform to the second frame. Activation of the first, second, and third flexible bimorph beams allows vertical displacement of the platform with respect to the substrate, with negligible lateral shift. A microactuator assembly includes a substrate, a plurality of first rigid frames, a plurality of first flexible bimorph beams, a plurality of second rigid frames, a plurality of second flexible bimorph beams, a platform, and a plurality of third flexible bimorph beams. Activation of the first, second, and third bimorph beams allows vertical displacement of the platform with respect to the substrate, with negligible lateral shift. A further embodiment with four identical such microactuators oriented at four sides of the platform, can achieve 1D or 2D angular scanning of the mirror plate by the activation of 1 or 2 adjacent microactuators.
Abstract translation: 用于使平台相对于衬底垂直移位的微致动器包括第一刚性框架，将第一框架连接到衬底的第一柔性双压电晶片梁，第二刚性框架，将第二框架连接到第一框架的第二柔性双压电晶片梁， 以及将平台连接到第二框架的第三柔性双压电晶片。 第一，第二和第三柔性双晶片束的激活允许平台相对于衬底的垂直位移，具有可忽略的横向偏移。 微致动器组件包括基板，多个第一刚性框架，多个第一柔性双压电晶片梁，多个第二刚性框架，多个第二柔性双压电晶片梁，平台和多个第三柔性双压电晶片。 第一，第二和第三双晶片束的激活允许平台相对于衬底的垂直位移，具有可忽略的横向偏移。 具有四个相同的这样的微致动器的另一实施例在平台的四个侧面定向，可以通过激活1或2个相邻微致动器来实现镜板的1D或2D角扫描。
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公开(公告)号：US20140185116A1
公开(公告)日：2014-07-03
申请号：US14046264
申请日：2013-10-04
Applicant: Funai Electric Co., Ltd.
Inventor： Kouichi Kugo
IPC: G02B26/10
CPC classification number: G02B26/101 , B81B3/007 , B81B2201/032 , B81B2201/042 , B81B2203/058 , G02B26/0841
Abstract: A scanning mirror device includes a mirror, a first supporting body that supports the mirror, a plurality of securing materials that has higher rigidity than the first supporting body and supports the first supporting body, a reinforcing material that has higher rigidity than the first supporting body and is attached to the plurality of securing materials on a surface different from a surface on which the mirror is disposed, and a first driving portion that deforms the first supporting body so as to cause the mirror to be displaced around a first axis.
Abstract translation: 扫描镜装置包括反射镜，支撑反射镜的第一支撑体，具有比第一支撑体高的刚性并支撑第一支撑体的多个固定材料，具有比第一支撑体高的刚性的增强材料 并且在与设置有反射镜的表面不同的表面上附接到多个固定材料;以及第一驱动部，其使第一支撑体变形，使得反射镜绕第一轴线移位。
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