Invention Application
US20150298965A1 ALUMINUM NITRIDE (AlN) DEVICES WITH INFRARED ABSORPTION STRUCTURAL LAYER
有权
带有红外吸收结构层的氮化铝(AlN)器件
- Patent Title: ALUMINUM NITRIDE (AlN) DEVICES WITH INFRARED ABSORPTION STRUCTURAL LAYER
- Patent Title (中): 带有红外吸收结构层的氮化铝(AlN)器件
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Application No.: US14480051Application Date: 2014-09-08
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Publication No.: US20150298965A1Publication Date: 2015-10-22
- Inventor: Julius Ming-Lin Tsai , Michael J. Daneman
- Applicant: INVENSENSE, INC.
- Main IPC: B81B7/00
- IPC: B81B7/00 ; B81B3/00 ; B81C1/00

Abstract:
A micro-electro-mechanical system device is disclosed. The micro-mechanical system device comprises a first silicon substrate comprising: a handle layer comprising a first surface and a second surface, the second surface comprises a cavity; an insulating layer deposited over the second surface of the handle layer; a device layer having a third surface bonded to the insulating layer and a fourth surface; a piezoelectric layer deposited over the fourth surface of the device layer; a metal conductivity layer disposed over the piezoelectric layer; a bond layer disposed over a portion of the metal conductivity layer; and a stand-off formed on the first silicon substrate; wherein the first silicon substrate is bonded to a second silicon substrate, comprising: a metal electrode configured to form an electrical connection between the metal conductivity layer formed on the first silicon substrate and the second silicon substrate.
Public/Granted literature
- US09511994B2 Aluminum nitride (AlN) devices with infrared absorption structural layer Public/Granted day:2016-12-06
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