公开(公告)号：US09041072B2

公开(公告)日：2015-05-26

申请号：US14333767

申请日：2014-07-17

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Gang Chen ,  Duli Mao ,  Hsin-Chih Tai

IPC: H01L27/148 ,  H01L31/18 ,  H01L27/146

CPC classification number: H01L27/14812 ,  H01L27/14614 ,  H01L27/14689 ,  H01L27/14806 ,  H01L31/18

Abstract: A pixel cell includes a photodiode, a storage transistor, a transfer transistor and an output transistor disposed in a semiconductor substrate. The transfer transistor selectively transfers image charge accumulated in the photodiode from the photodiode to the storage transistor. The output transistor selectively transfers the image charge from the storage transistor to a readout node. A first isolation fence is disposed over the semiconductor substrate separating a transfer gate of the transfer transistor from a storage gate of the storage transistor. A second isolation fence is disposed over the semiconductor substrate separating the storage gate from an output gate of the output transistor. Thicknesses of the first and second isolation fences are substantially equal to spacing distances between the transfer gate and the storage gate, and between the storage gate and the output gate, respectively.

Abstract translation: 像素单元包括设置在半导体衬底中的光电二极管，存储晶体管，传输晶体管和输出晶体管。 转移晶体管将从光电二极管累积的图像电荷选择性地转移到存储晶体管。 输出晶体管将图像电荷从存储晶体管选择性地传输到读出节点。 第一隔离栅栏设置在半导体衬底上，用于将转移晶体管的转移栅极与存储晶体管的存储栅极分开。 第二隔离栅栏设置在半导体衬底上，以将存储栅极与输出晶体管的输出栅极分离。 第一和第二隔离栅栏的厚度分别基本上等于传输栅极和存储栅极之间以及存储栅极和输出栅极之间的间隔距离。

公开(公告)号：US08981512B1

公开(公告)日：2015-03-17

申请号：US14030395

申请日：2013-09-18

Applicant: OmniVision Technologies, Inc.

Inventor： Gang Chen ,  Jin Li ,  Duli Mao ,  Dyson H. Tai

IPC: H01L31/0232 ,  H01L21/00 ,  H01L31/18

CPC classification number: H01L27/14623 ,  H01L27/14621 ,  H01L27/14627

Abstract: A pixel array includes a plurality of photodiodes disposed in a semiconductor layer and arranged in the pixel array. A color filter layer is disposed proximate to the semiconductor layer. Light is to be directed to at least a first one of the plurality of photodiodes through the color filter layer. An optical shield layer is disposed proximate to the color filter layer. The color filter layer is disposed between the optical shield layer and the semiconductor layer. The optical shield layer shields at least a second one of the plurality of photodiodes from the light.

Abstract translation: 像素阵列包括设置在半导体层中并布置在像素阵列中的多个光电二极管。 滤色器层靠近半导体层设置。 光通过滤色器层被引导到多个光电二极管中的至少第一个。 光屏蔽层靠近滤色器层设置。 滤色器层设置在光学屏蔽层和半导体层之间。 光屏蔽层屏蔽来自光的多个光电二极管中的至少一个。

公开(公告)号：US20150048427A1

公开(公告)日：2015-02-19

申请号：US13968210

申请日：2013-08-15

Applicant: Omnivision Technologies, Inc.

Inventor： Sing-Chung Hu ,  Rongsheng Yang ,  Gang Chen ,  Howard E. Rhodes ,  Sohei Manabe ,  Hsin-Chih Tai

IPC: H01L27/146

CPC classification number: H01L27/14643 ,  H01L27/0928 ,  H01L27/14601 ,  H01L27/1463 ,  H01L27/1464

Abstract: A pixel cell includes a photodiode disposed in an epitaxial layer in a first region of semiconductor material. A floating diffusion is disposed in a well region disposed in the epitaxial layer in the first region. A transfer transistor is disposed in the first region and coupled between the photodiode and the floating diffusion to selectively transfer image charge from the photodiode to the floating diffusion. A deep trench isolation (DTI) structure lined with a dielectric layer inside the DTI structure is disposed in the semiconductor material isolates the first region on one side of the DTI structure from a second region of the semiconductor material on an other side of the DTI structure. Doped semiconductor material inside the DTI structure is selectively coupled to a readout pulse voltage in response to the transfer transistor selectively transferring the image charge from the photodiode to the floating diffusion.

Abstract translation: 像素单元包括设置在半导体材料的第一区域中的外延层中的光电二极管。 浮置扩散部设置在设置在第一区域的外延层中的阱区域中。 传输晶体管设置在第一区域中并且耦合在光电二极管和浮动扩散之间以选择性地将图像电荷从光电二极管转移到浮动扩散。 在DTI结构内部布置有介电层的深沟槽隔离（DTI）结构设置在半导体材料中，将DTI结构的一侧上的第一区域与DTI结构的另一侧上的半导体材料的第二区域隔离开 。 响应于传输晶体管选择性地将图像电荷从光电二极管转移到浮动扩散，DTI结构内部的掺杂半导体材料选择性地耦合到读出脉冲电压。

公开(公告)号：US20140319639A1

公开(公告)日：2014-10-30

申请号：US14331646

申请日：2014-07-15

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Howard E. Rhodes ,  Dajiang Yang ,  Gang Chen ,  Duli Mao ,  Vincent Venezia

IPC: H01L27/146

CPC classification number: H01L31/0224 ,  H01L27/14609 ,  H01L27/1462 ,  H01L27/14643 ,  H01L31/103

Abstract: An image sensor pixel includes a photodiode region having a first polarity doping type disposed in a semiconductor layer. A pinning surface layer having a second polarity doping type is disposed over the photodiode region in the semiconductor layer. The second polarity is opposite from the first polarity. A first polarity charge layer is disposed proximate to the pinning surface layer over the photodiode region. A contact etch stop layer is disposed over the photodiode region proximate to the first polarity charge layer. The first polarity charge layer is disposed between the pinning surface layer and the contact etch stop layer such that first polarity charge layer cancels out charge having a second polarity that is induced in the contact etch stop layer. A passivation layer is also disposed over the photodiode region between the pinning surface layer and the first polarity charge layer.

Abstract translation: 图像传感器像素包括设置在半导体层中的具有第一极性掺杂型的光电二极管区域。 具有第二极性掺杂型的钉扎表面层设置在半导体层中的光电二极管区域的上方。 第二极性与第一极性相反。 第一极性电荷层设置在光电二极管区域附近的钉扎表面层附近。 接触蚀刻停止层设置在靠近第一极性电荷层的光电二极管区域的上方。 第一极性电荷层设置在钉扎表面层和接触蚀刻停止层之间，使得第一极性电荷层抵消在接触蚀刻停止层中感应的具有第二极性的电荷。 钝化层也设置在钉扎表面层和第一极性电荷层之间的光电二极管区域之上。

公开(公告)号：US20140312447A1

公开(公告)日：2014-10-23

申请号：US14319807

申请日：2014-06-30

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Duli Mao ,  Dyson H. Tai ,  Vincent Venezia ,  Yin Qian ,  Gang Chen ,  Howard E. Rhodes

IPC: H01L27/146

CPC classification number: H01L27/1462 ,  H01L27/14623 ,  H01L27/1464 ,  H01L27/14685

Abstract: A backside illuminated image sensor includes a semiconductor layer and a trench disposed in the semiconductor layer. The semiconductor layer has a frontside surface and a backside surface. The semiconductor layer includes a light sensing element of a pixel array disposed in a sensor array region of the semiconductor layer. The pixel array is positioned to receive external incoming light through the backside surface of the semiconductor layer. The semiconductor layer also includes a light emitting element disposed in a periphery circuit region of the semiconductor layer external to the sensor array region. The trench is disposed in the semiconductor layer between the light sensing element and the light emitting element.

Abstract translation: 背面照明图像传感器包括设置在半导体层中的半导体层和沟槽。 半导体层具有前表面和背面。 半导体层包括设置在半导体层的传感器阵列区域中的像素阵列的光感测元件。 像素阵列被定位成接收穿过半导体层的背面的外部入射光。 半导体层还包括设置在传感器阵列区域外部的半导体层的外围电路区域中的发光元件。 沟槽设置在光感测元件和发光元件之间的半导体层中。

公开(公告)号：US20140306360A1

公开(公告)日：2014-10-16

申请号：US13860859

申请日：2013-04-11

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Jin Li ,  Gang Chen ,  Yin Qian ,  Hsin-Chih Tai

IPC: G02B3/00 ,  B05D1/00 ,  B29D11/00

CPC classification number: G02B3/0018 ,  B05D1/005 ,  B29D11/00365 ,  B29D11/00384 ,  B29D11/00451 ,  G02B3/0043

Abstract: A method of forming microlenses for an image sensor having at least one large-area pixel and at least one small-area pixel is disclosed. The method includes forming a uniform layer of microlens material on a light incident side of the image sensor over the large-area pixel and over the small-area pixel. The method also includes forming the layer of microlens material into a first block disposed over the large-area pixel and into a second block disposed over the small-area pixel. A void is also formed in the second block to reduce a volume of microlens material included in the second block. The first and second blocks are then reflowed to form a respective first microlens and second microlens. The first microlens has substantially the same effective focal length as the second microlens.

Abstract translation: 公开了一种形成具有至少一个大面积像素和至少一个小面积像素的图像传感器的微透镜的方法。 该方法包括在大面积像素上和小区域像素上的图像传感器的光入射侧上形成均匀的微透镜材料层。 该方法还包括将微透镜材料层形成为设置在大面积像素上的第一块和设置在小面积像素上的第二块。 在第二块中还形成空隙，以减少包含在第二块中的微透镜材料的体积。 然后将第一和第二块回流以形成相应的第一微透镜和第二微透镜。 第一微透镜具有与第二微透镜基本上相同的有效焦距。

公开(公告)号：US20140210028A1

公开(公告)日：2014-07-31

申请号：US13754465

申请日：2013-01-30

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Gang Chen ,  Duli Mao ,  Hsin-Chih Tai ,  Howard E. Rhodes

IPC: H01L27/146 ,  G02B5/20

CPC classification number: G02B5/201 ,  G02B1/105 ,  G02B1/14 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14685

Abstract: Embodiments of an apparatus including a color filter arrangement formed on a substrate having a pixel array formed therein. The color filter arrangement includes a clear filter having a first clear hard mask layer and a second clear hard mask layer formed thereon, a first color filter having the first clear hard mask layer and the second hard mask layer formed thereon, a second color filter having the first clear hard mask layer formed thereon, and a third color filter having no clear hard mask layer formed thereon. Other embodiments are disclosed and claimed.

Abstract translation: 包括形成在其上形成有像素阵列的基板上的滤色器装置的装置的实施例。 滤色器装置包括具有形成在其上的第一透明硬掩模层和第二透明硬掩模层的透明滤光器，具有形成在其上的第一透明硬掩模层和第二硬掩模层的第一滤色器，具有第二透明硬掩模层的第二滤色器， 形成在其上的第一透明硬掩模层和形成有透明硬掩模层的第三滤色器。 公开和要求保护其他实施例。

公开(公告)号：US20230314681A1

公开(公告)日：2023-10-05

申请号：US17713593

申请日：2022-04-05

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Qin Wang ,  Chin Poh Pang ,  Gang Chen

IPC: G02B5/30 ,  H01L27/146

CPC classification number: G02B5/3058 ,  H01L27/14627 ,  H01L27/14643 ,  H01L27/14621

Abstract: Image sensors and devices for phase-detection auto focus processes are provided. A symmetric polarization filter includes a first polarizer defining a first plurality of apertures and a second polarizer adjacent with the first polarizer defining a second plurality of apertures. The first plurality of apertures can be mirror symmetrical with the second plurality of apertures about a lateral axis of the symmetric polarization filter between the first polarizer and the second polarizer. The lateral axis can be defined as an axis of symmetry of the symmetric polarization filter in plane with the first polarizer and the second polarizer.

公开(公告)号：US11658199B2

公开(公告)日：2023-05-23

申请号：US16998815

申请日：2020-08-20

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Qin Wang ,  Gang Chen

IPC: H01L27/146

CPC classification number: H01L27/14643 ,  H01L27/14603 ,  H01L27/14609

Abstract: A device includes a photodiode, a floating diffusion region, a transfer gate, and a channel region. The photodiode is disposed in a semiconductor material. The photodiode is coupled to generate charges in response to incident light. The photodiode has a substantially uniform doping profile throughout a depth of the photodiode in the semiconductor material. The floating diffusion region is disposed in the semiconductor material. The transfer gate is disposed between the photodiode and the floating diffusion region, wherein the transfer gate includes a plurality of fin structures. The channel region associated with the transfer gate is in the semiconductor material proximate to the transfer gate. The transfer gate is coupled to transfer the charge from the photodiode to the floating diffusion region through the channel region in response to a transfer signal coupled to be received by the transfer gate.

公开(公告)号：US11417701B2

公开(公告)日：2022-08-16

申请号：US16995609

申请日：2020-08-17

Applicant: OmniVision Technologies, Inc.

Inventor： Hui Zang ,  Gang Chen

IPC: H01L27/146 ,  H04N5/353 ,  H04N5/374 ,  H04N5/378

Abstract: A CMOS image sensor has an array of photodiode cells, the photodiode cells each include four buried photodiodes coupled by vertical transfer gate transistors to a single floating node diffusion. Each cell also has a reset transistor coupled to the floating node diffusion, a source follower transistor having gate coupled to the floating node diffusion, and a read select transistor coupled to the source follower transistor. The reset transistor, source follower transistor, and read select transistor have predominately gate and shape edges oriented at an angle greater than 30-degrees and less than 60-degrees from a line extending along an entire horizontal row of photodiodes of a photodiode array of the image sensor and are formed vertically above, and in the same integrated circuit as, the photodiodes of the photodiode array.