公开(公告)号：US20180004082A1

公开(公告)日：2018-01-04

申请号：US15403446

申请日：2017-01-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyunjae SONG ,  Hyeonjin SHIN

IPC: G03F1/62 ,  G03F1/48 ,  G03F1/64 ,  G03F7/20

CPC classification number: G03F1/62 ,  G03F1/22 ,  G03F1/48 ,  G03F1/64 ,  G03F7/70058

Abstract: Provided are a pellicle for a photomask, which protects the photomask from external contamination and an exposure apparatus including the pellicle for the photomask. The pellicle for the photomask includes a pellicle membrane provided spaced apart from the photomask. The pellicle membrane includes a semiconductor having a two-dimensional (2D) crystalline structure.

公开(公告)号：US20170331396A1

公开(公告)日：2017-11-16

申请号：US15589091

申请日：2017-05-08

Applicant: Samsung Electronics Co., Ltd. ,  UNIST (ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)

Inventor： Kyungeun BYUN ,  Jaeyoung KIM ,  Minsu SEOL ,  Hyeonjin SHIN ,  Jeongmin BAIK ,  Woojung YANG ,  Byeonguk YE ,  Jaewon LEE ,  Jinpyo LEE ,  Kyeongnam KIM

IPC: H02N1/04

CPC classification number: H02N1/04

Abstract: A triboelectric generator includes a first electrode and a second electrode spaced apart from each other, a first charging part on the first electrode, a second charging part on the second electrode, and a grounding unit. The first charging part and the second charging part may be configured to contact each other through a sliding motion. The grounding unit may be configured to intermittently connect a charge reservoir to the second charging part. The grounding unit may be configured to vary the electric potential of the second charging part so as to amplify current flowing between electrodes of the triboelectric generator.

公开(公告)号：US20170098749A1

公开(公告)日：2017-04-06

申请号：US15280241

申请日：2016-09-29

Applicant: Samsung Electronics Co., Ltd. ,  Research & Business Foundation Sungkyunkwan University

Inventor： Seongjun PARK ,  Hyeonjin SHIN ,  Sungwng KIM ,  Eunsung KIM ,  Jaeyeol HWANG

IPC: H01L35/16 ,  H01L35/34 ,  H01L35/10 ,  H01L35/18

CPC classification number: H01L35/16 ,  H01L21/02488 ,  H01L21/02502 ,  H01L35/10 ,  H01L35/18 ,  H01L35/34

Abstract: A thermoelectric structure that may be included in a thermoelectric device may include a thin-film structure that may include a plurality of thin-film layers. The thin-film structure may include Tellurium. The thin-film structure may be on a substrate. The substrate may include an oxide, and a buffer layer may be between the substrate and the thin-film structure. The thermoelectric structure may be manufactured via depositing material ablated from a target onto the substrate. Some material may react with the substrate to form the buffer layer, and thin film layers may be formed on the buffer layer. The thin film layers may be removed from the substrate and provided on a separate substrate. Removing the thin-film layers from the substrate may include removing the thin-film layers from the buffer layer.

公开(公告)号：US20160359429A1

公开(公告)日：2016-12-08

申请号：US14843020

申请日：2015-09-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyung-Eun BYUN ,  Minsu SEOL ,  Hyeonjin SHIN ,  Seongjun PARK

IPC: H02N1/04

CPC classification number: H02N1/04

Abstract: Example embodiments relate to triboelectric generators that include a first electrode and a triboelectric material layer facing first electrode, and a self-assembled monolayer that is combined with a surface of the first electrode or a surface of the triboelectric material layer between the first electrode and the triboelectric material layer. The self-assembled monolayer is formed of or include a material that includes a silane group, a silanol group, or a thiol group according to a material to be combined.

Abstract translation: 示例性实施例涉及摩擦电发生器，其包括面向第一电极的第一电极和摩擦电材料层，以及自组装单层，其与第一电极的表面或摩擦电材料层的表面在第一电极和 摩擦材料层。 根据待组合的材料，自组装单层由或包括包含硅烷基，硅烷醇基或硫醇基的材料形成或包括。

公开(公告)号：US20160322628A1

公开(公告)日：2016-11-03

申请号：US15131649

申请日：2016-04-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： DONGWOOK LEE ,  Hyeonjin SHIN ,  Seongjun PARK

IPC: H01M4/134 ,  H01M10/0525 ,  H01M4/1395 ,  H01M4/04 ,  H01M4/38 ,  H01M4/62

CPC classification number: H01M4/134 ,  H01M4/0471 ,  H01M4/1395 ,  H01M4/386 ,  H01M4/625 ,  H01M4/661 ,  H01M4/663 ,  H01M4/667 ,  H01M4/80 ,  H01M10/052 ,  H01M2004/021 ,  H01M2004/028

Abstract: Example embodiments relate to a cathode layer of a lithium secondary battery. The cathode layer includes a three-dimensional carbon structure and a plurality of silicon particles. The three-dimensional carbon structure includes a plurality of cavities without a binder, and the plurality of silicon particles are disposed in the plurality of cavities.

Abstract translation: 实施例涉及锂二次电池的阴极层。 阴极层包括三维碳结构和多个硅颗粒。 三维碳结构包括多个没有粘合剂的空腔，并且多个硅颗粒设置在多个空腔中。

公开(公告)号：US20160291472A1

公开(公告)日：2016-10-06

申请号：US14843003

申请日：2015-09-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyeonjin SHIN ,  Sangwon KIM ,  Minsu SEOL ,  Seongjun PARK ,  Yeonchoo CHO

IPC: G03F7/11 ,  G03F7/36 ,  G03F7/16

Abstract: A hardmask composition may include graphene nanoparticles having a size in a range of about 5 nm to about 100 nm and a solvent.

Abstract translation: 硬掩模组合物可以包括尺寸在约5nm至约100nm范围内的石墨烯纳米颗粒和溶剂。

公开(公告)号：US20160282721A1

公开(公告)日：2016-09-29

申请号：US14825792

申请日：2015-08-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minsu SEOL ,  Sangwon KIM ,  Hyeonjin SHIN ,  Seongjun PARK ,  Yeonchoo CHO

IPC: G03F7/11

CPC classification number: G03F7/094

Abstract: A hardmask composition includes a plurality of graphene nanosheets doped with boron (B) and/or nitrogen (N) and a solvent. A size of the graphene nanosheet may be in a range of about 5 nm to about 1000 nm. The hardmask composition may include an aromatic ring-containing material.

Abstract translation: 硬掩模组合物包括掺杂有硼（B）和/或氮（N）和溶剂的多个石墨烯纳米片。 石墨烯纳米片的尺寸可以在约5nm至约1000nm的范围内。 硬掩模组合物可以包括含芳环的材料。

公开(公告)号：US20160240482A1

公开(公告)日：2016-08-18

申请号：US14814938

申请日：2015-07-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyunjae SONG ,  Seunggeol NAM ,  Yeonchoo CHO ,  Seongjun PARK ,  Hyeonjin SHIN ,  Jaeho LEE

IPC: H01L23/532 ,  H01L21/768

CPC classification number: H01L23/53209 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76852 ,  H01L23/5226

Abstract: Example embodiments relate to a layer structure having a diffusion barrier layer, and a method of manufacturing the same. The layer structure includes first and second material layers and a diffusion barrier layer therebetween. The diffusion barrier layer includes a nanocrystalline graphene (nc-G) layer. In the layer structure, the diffusion barrier layer may further include a non-graphene metal compound layer or a graphene layer together with the nc-G layer. One of the first and second material layers is an insulating layer, a metal layer, or a semiconductor layer, and the remaining layer may be a metal layer.

Abstract translation: 示例实施例涉及具有扩散阻挡层的层结构及其制造方法。 层结构包括第一和第二材料层以及它们之间的扩散阻挡层。 扩散阻挡层包括纳米晶石墨烯（nc-G）层。 在层结构中，扩散阻挡层还可以与nc-G层一起包括非石墨烯金属化合物层或石墨烯层。 第一和第二材料层之一是绝缘层，金属层或半导体层，其余层可以是金属层。

公开(公告)号：US20160027645A1

公开(公告)日：2016-01-28

申请号：US14697150

申请日：2015-04-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyeonjin SHIN ,  Sangwon KIM ,  Seongjun PARK

IPC: H01L21/033 ,  G03F7/11 ,  C08K3/22 ,  C09D7/12 ,  C08K3/30 ,  C08K5/56 ,  H01L21/02 ,  C08K3/38

CPC classification number: H01L21/0332 ,  C08K3/22 ,  C08K3/30 ,  C08K3/38 ,  C08K5/56 ,  C08K2003/2255 ,  C08K2003/3009 ,  C08K2003/385 ,  C09D7/61 ,  C09D7/63 ,  G03F7/094 ,  H01L21/02112 ,  H01L21/02282 ,  H01L21/0254 ,  H01L21/02565 ,  H01L21/02568 ,  H01L21/02584 ,  H01L21/02628 ,  H01L21/31122 ,  H01L21/31144

Abstract: Example embodiments relate to a hardmask composition and/or a method of forming a fine pattern by using the hardmask composition, wherein the hardmask composition includes at least one of a two-dimensional layered nanostructure and a precursor thereof, and a solvent, and an amount of the at least one of a two-dimensional layered nanostructure and the precursor is about 0.01 part to about 40 parts by weight based on 100 parts by weight of the hardmask composition.

Abstract translation: 实施例涉及硬掩模组合物和/或通过使用硬掩模组合物形成精细图案的方法，其中所述硬掩模组合物包括二维层状纳米结构及其前体中的至少一种和溶剂，以及量 的二维层状纳米结构和前体中的至少一种为基于100重量份的硬掩模组合物为约0.01重量份至约40重量份。

公开(公告)号：US20150333196A1

公开(公告)日：2015-11-19

申请号：US14558384

申请日：2014-12-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyeonjin SHIN ,  Sangwoo KIM ,  Kyungsik SHIN ,  Hye-Jung PARK ,  Eunbi CHO

IPC: H01L31/0224 ,  H01L31/032

CPC classification number: H01L31/032 ,  H01L31/022408 ,  H01L31/0324 ,  H01L31/04 ,  H01L31/08 ,  Y02E10/50

Abstract: Example embodiments relate to optoelectronic devices. An optoelectronic device may include a photoactive layer between first and second electrodes, and a ferroelectric layer corresponding to at least one of the first and second electrodes. At least one of the first and second electrodes may include graphene. The photoactive layer may include a two-dimensional (2D) semiconductor. The optoelectronic device may further include a third electrode, and in this case, the ferroelectric layer may be between the second electrode and the third electrode. The second electrode, the ferroelectric layer, and the third electrode may constitute a nanogenerator.

Abstract translation: 示例实施例涉及光电器件。 光电子器件可以包括在第一和第二电极之间的光敏层，以及对应于第一和第二电极中的至少一个的铁电层。 第一和第二电极中的至少一个可以包括石墨烯。 光活性层可以包括二维（2D）半导体。 光电子器件还可以包括第三电极，并且在这种情况下，铁电层可以在第二电极和第三电极之间。 第二电极，铁电体层和第三电极可以构成纳米发生器。