公开(公告)号：US20190103439A1

公开(公告)日：2019-04-04

申请号：US16194176

申请日：2018-11-16

Applicant: Applied Materials, Inc.

Inventor： Manivannan Thothadri ,  Robert Jan Visser

IPC: H01L27/15 ,  H05K13/00 ,  H01L33/00 ,  H01L25/075 ,  H01L33/60 ,  H01L21/683 ,  H01L21/67 ,  H05K3/30 ,  H05K3/00 ,  H05K13/04 ,  H01L33/48 ,  H01L33/20

Abstract: A method of surface mounting micro-devices includes adhering a first plurality of micro-devices on a donor substrate to a transfer surface with an adhesive layer, removing the first plurality of micro-devices from donor substrate while the first plurality of micro-devices remain adhered to the transfer surface, positioning the transfer surface relative to a destination substrate so that a subset of the plurality of micro-devices on the transfer surface abut a plurality of receiving positions on the destination substrate, the subset including one or more micro-devices but less than all of micro-devices of the plurality of micro-devices, selectively neutralizing one or more of regions of the adhesive layer on the transfer surface corresponding to the subset of micro-device to light to detach the subset of micro-devices from the adhesive layer, and separating the transfer surface from the destination substrate such that the subset of micro-devices remain on the destination substrate.

公开(公告)号：US10233528B2

公开(公告)日：2019-03-19

申请号：US14733913

申请日：2015-06-08

Applicant: Applied Materials, Inc.

Inventor： John Macneill White ,  Robert Jan Visser

IPC: C23C14/04 ,  C23C14/54 ,  C23C14/56 ,  H01L51/00

Abstract: Embodiments of the disclosure provide methods and apparatus for monitoring film properties on a substrate in-situ. In one embodiment, a deposition system is provided. The deposition system includes at least two deposition chambers, and a patterned mask designed specifically for each of the deposition chambers, wherein a first mask of the patterned masks has a first opening formed therethrough outside of a pattern formed thereon, and a second mask of the patterned masks has a first opening formed therethrough outside of a pattern formed thereon, the first opening of the second mask having a position on the second mask that is different than a position of the first opening on the first mask.

公开(公告)号：US20180298492A1

公开(公告)日：2018-10-18

申请号：US15978930

申请日：2018-05-14

Applicant: APPLIED MATERIALS, INC.

Inventor： Ranga Rao Arnepalli ,  Darshan Thakare ,  Abhijit Basu Mallick ,  Pramit Manna ,  Robert Jan Visser ,  Prerna Sonthalia Goradia ,  Nilesh Chimanrao Bagul

IPC: C23C16/448 ,  C23C16/40 ,  C23C16/34 ,  H01L21/02

CPC classification number: C23C16/4486 ,  B05D1/02 ,  C23C16/045 ,  C23C16/345 ,  C23C16/401 ,  C23C16/403 ,  C23C16/405 ,  H01L21/02153 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02183 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/02271

Abstract: Systems and methods for forming films on the surface of a substrate are described. The systems possess aerosol generators which form droplets from a liquid solution made from a solvent and a deposition precursor. A carrier gas may be flowed through the liquid solution and push the droplets toward a substrate placed in a substrate processing region. The droplets pass into the substrate processing region and chemically react with the substrate to form films. The temperature of the substrate may be maintained below the boiling temperature of the solvent during film formation. The solvent imparts a flowability to the forming film and enable the depositing film to flow along the surface of a patterned substrate during formation prior to solidifying. The flowable film results in bottom-up gapfill inside narrow high-aspect ratio gaps in the patterned substrate.

公开(公告)号：US09991129B1

公开(公告)日：2018-06-05

申请号：US15603076

申请日：2017-05-23

Applicant: Applied Materials, Inc.

Inventor： Geetika Bajaj ,  Prerna Sonthalia Goradia ,  Robert Jan Visser

IPC: H01L21/302 ,  H01L21/3065 ,  H01L29/165 ,  H01L21/02 ,  H01L21/3213 ,  H01L23/29 ,  H01L21/67

CPC classification number: H01L23/298 ,  H01L21/02068 ,  H01L21/32132 ,  H01L21/32137 ,  H01L21/67069 ,  H01L21/67167 ,  H01L29/165

Abstract: Systems and methods of etching a semiconductor substrate may include concurrent exposure of the semiconductor substrate to a chlorine-containing precursor and ultraviolet (UV) light. The semiconductor substrate may include exposed amorphous silicon. The semiconductor substrate may further include exposed crystalline silicon or underlying crystalline silicon. The methods may further include removing amorphous silicon faster than crystalline silicon.

公开(公告)号：US09859128B2

公开(公告)日：2018-01-02

申请号：US15337781

申请日：2016-10-28

Applicant: APPLIED MATERIALS, INC.

Inventor： Fei Wang ,  Mikhail Korolik ,  Nitin K. Ingle ,  Anchuan Wang ,  Robert Jan Visser

IPC: H01L21/311 ,  H01L21/461 ,  H01L21/02

CPC classification number: H01L21/31144 ,  C09D183/08 ,  H01J37/3244 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/0337 ,  H01L21/3105 ,  H01L21/31116

Abstract: Methods of etching silicon nitride faster than silicon or silicon oxide are described. Methods of selectively depositing additional material onto the silicon nitride are also described. Exposed portions of silicon nitride and silicon oxide may both be present on a patterned substrate. A self-assembled monolayer (SAM) is selectively deposited over the silicon oxide but not on the exposed silicon nitride. Molecules of the self-assembled monolayer include a head moiety and a tail moiety, the head moiety forming a bond with the OH group on the exposed silicon oxide portion and the tail moiety extending away from the patterned substrate. A subsequent exposure to an etchant or a deposition precursor may then be used to selectively remove silicon nitride or to selectively deposit additional material on the silicon nitride.

公开(公告)号：US09576815B2

公开(公告)日：2017-02-21

申请号：US14690165

申请日：2015-04-17

Applicant: Applied Materials, Inc.

Inventor： Jingjing Xu ,  Fei Wang ,  Anchuan Wang ,  Nitin K. Ingle ,  Robert Jan Visser

IPC: H01L21/302 ,  H01L21/311

CPC classification number: H01L21/31116

Abstract: A method of etching silicon nitride on patterned heterogeneous structures is described and includes a gas phase etch using anhydrous vapor-phase HF. The HF may be combined with one or more of several precursors in the substrate processing region and near the substrate to increase the silicon nitride etch rate and/or the silicon nitride selectivity. The silicon nitride etch selectivity is increased most notably when compared with silicon of various forms. No precursors are excited in any plasma either outside or inside the substrate processing region according to embodiments. The HF may be flowed through one set of channels in a dual-channel showerhead while the other precursor is flowed through a second set of channels in the dual-channel showerhead.

Abstract translation: 描述了在图案化异质结构上蚀刻氮化硅的方法，并且包括使用无水气相HF的气相蚀刻。 HF可以与衬底处理区域和衬底附近的几种前体中的一种或多种组合以增加氮化硅蚀刻速率和/或氮化硅选择性。 当与各种形式的硅相比时，氮化硅蚀刻选择性最显着地增加。 根据实施例，在衬底处理区域的外部或内部，在任何等离子体中都不会激发前体。 HF可以在双通道喷头中流过一组通道，而另一个前体流经双通道喷头中的第二组通道。

公开(公告)号：US12191139B2

公开(公告)日：2025-01-07

申请号：US17563024

申请日：2021-12-27

Applicant: Applied Materials, Inc.

Inventor： Tapash Chakraborty ,  Robert Jan Visser ,  Prerna Goradia

IPC: H01L21/02 ,  C23C16/455 ,  H01L21/3105 ,  B05D1/00 ,  B05D1/36

Abstract: Embodiments of the disclosure relate to methods of selectively depositing organic and hybrid organic/inorganic layers. More particularly, embodiments of the disclosure are directed to methods of modifying hydroxyl terminated surfaces for selective deposition of molecular layer organic and hybrid organic/inorganic films. Additional embodiments of the disclosure relate to cyclic compounds for use in molecular layer deposition processes.

公开(公告)号：US20240287678A1

公开(公告)日：2024-08-29

申请号：US18642134

申请日：2024-04-22

Applicant: Applied Materials, Inc.

Inventor： Geetika Bajaj ,  Darshan Thakare ,  Prerna Goradia ,  Robert Jan Visser ,  Yixiong Yang ,  Jacqueline S. Wrench ,  Srinivas Gandikota

IPC: C23C16/455 ,  C08G77/26 ,  C08G77/50 ,  C23C16/32 ,  C23C16/34 ,  C23C16/46 ,  H01L21/28

CPC classification number: C23C16/45553 ,  C08G77/26 ,  C08G77/50 ,  C23C16/32 ,  C23C16/34 ,  C23C16/45502 ,  C23C16/466 ,  H01L21/28088

Abstract: Methods of depositing a metal film by exposing a substrate surface to a halide precursor and an organosilane reactant are described. The halide precursor comprises a compound of general formula (I): MQzRm, wherein M is a metal, Q is a halogen selected from Cl, Br, F or I, z is from 1 to 6, R is selected from alkyl, CO, and cyclopentadienyl, and m is from 0 to 6. The aluminum reactant comprises a compound of general formula (II) or general formula (III):




wherein R1, R2, R3, R4, R5, R6, R7, R8, Ra, Rb, Rc, Rd, Re, and Rf are independently selected from hydrogen (H), substituted alkyl or unsubstituted alkyl; and X, Y, X′, and Y′ are independently selected from nitrogen (N) and carbon (C).

公开(公告)号：US11974457B2

公开(公告)日：2024-04-30

申请号：US18132173

申请日：2023-04-07

Applicant: Applied Materials, Inc.

Inventor： Gang Yu ,  Chung-Chia Chen ,  Wan-Yu Lin ,  Hyunsung Bang ,  Lisong Xu ,  Byung Sung Kwak ,  Robert Jan Visser

IPC: H10K50/856 ,  H10K59/122 ,  H10K71/00 ,  H10K102/00

CPC classification number: H10K50/856 ,  H10K59/122 ,  H10K71/00 ,  H10K2102/3026

Abstract: An organic light-emitting diode (OLED) device includes a substrate, a well structure on the substrate with the well structure having a recess with side walls and a floor, a lower metal layer covering the floor and side-walls of the well, an upper conductive layer on the lower metal layer covering the floor of the well and contacting the lower metal layer, the upper conductive layer having outer edges at about an intersection of the side walls and the floor, a dielectric layer formed of an oxide of the lower metal layer covering the side walls of the well without covering the upper conductive layer, a stack of OLED layers covering at least the floor of the well, the upper conductive layer providing an electrode for the stack of OLED layers, and a light extraction layer (LEL) in the well over the stack of OLED layers and the dielectric layer.

公开(公告)号：US11963377B2

公开(公告)日：2024-04-16

申请号：US17710939

申请日：2022-03-31

Applicant: Applied Materials, Inc.

Inventor： Gang Yu ,  Chung-Chia Chen ,  Wan-Yu Lin ,  Hyunsung Bang ,  Lisong Xu ,  Byung Sung Kwak ,  Robert Jan Visser

IPC: H01L51/00 ,  H10K30/35 ,  H10K50/11 ,  H10K50/13 ,  H10K50/856 ,  H10K50/858 ,  H10K71/00 ,  H10K71/15

CPC classification number: H10K50/13 ,  H10K30/35 ,  H10K50/11 ,  H10K50/856 ,  H10K50/858 ,  H10K71/00 ,  H10K71/15 ,  H10K71/311

Abstract: A light-emitting diode display including a substrate having a driving circuitry and a plurality of light emitting diode structures disposed on the substrate. Each light-emitting diode structure has a light emitting diode with a light emission zone having a planar portion, and a pigmentless light extraction layer of a UV-cured ink disposed over the light-emitting diode. The light extraction layer has a gradient in index of refraction along an axis normal to the planar portion, and the index of refraction of the light extraction layer decreases with distance from the planar portion.