公开(公告)号：US08368231B2

公开(公告)日：2013-02-05

申请号：US13154165

申请日：2011-06-06

Applicant: Kang-Wook Lee ,  Gu-Sung Kim ,  Dong-Hyeon Jang ,  Seung-Duk Baek ,  Jae-Sik Chung

Inventor： Kang-Wook Lee ,  Gu-Sung Kim ,  Dong-Hyeon Jang ,  Seung-Duk Baek ,  Jae-Sik Chung

IPC: H01L23/48

CPC classification number: H01L25/50 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/5389 ,  H01L24/24 ,  H01L24/48 ,  H01L24/82 ,  H01L24/97 ,  H01L25/0657 ,  H01L2224/05001 ,  H01L2224/05008 ,  H01L2224/05022 ,  H01L2224/05024 ,  H01L2224/05124 ,  H01L2224/05166 ,  H01L2224/05548 ,  H01L2224/05556 ,  H01L2224/05569 ,  H01L2224/13025 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/24226 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48095 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2225/06586 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/18162 ,  Y02P80/30 ,  Y10S438/977 ,  Y10T436/104998 ,  Y10T436/108331 ,  Y10T436/17 ,  Y10T436/175383 ,  H01L2224/81 ,  H01L2224/82 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: A method for manufacturing chip stack packages may include: providing at least two wafers, each wafer having a plurality of chips, and scribe lanes formed between and separating adjacent chips; forming a plurality of via holes in peripheral portions of the scribe lanes; forming connection vias by filling the via holes; establishing electrical connections between the chip pads and corresponding connection vias; removing material from the back sides of the wafers to form thinned wafers; separating the thinned wafers into individual chips by removing a central portion of each scribe lane; attaching a first plurality of individual chips to a test wafer; attaching a second plurality of individual chips to the first plurality of individual chips to form a plurality of chip stack structures; encapsulating the plurality of chip stack structures; and separating the plurality of chip stack structures to form individual chip stack packages.

公开(公告)号：US20120217289A1

公开(公告)日：2012-08-30

申请号：US13034932

申请日：2011-02-25

Applicant: Kang-Wook Lee ,  Jae-Woong Nah ,  Nathalie Normand ,  Valerie Oberson

Inventor： Kang-Wook Lee ,  Jae-Woong Nah ,  Nathalie Normand ,  Valerie Oberson

IPC: B23K35/363 ,  B23K1/20

CPC classification number: B23K1/0016 ,  B23K35/3601 ,  B23K35/362

Abstract: The present invention is directed to flux compositions and uses thereof. One composition comprises an activator, a medium-viscosity solvent being a polymer, and a high-viscosity solvent being a copolymer containing first monomers and second monomers. Another composition comprises an activator, and a high-viscosity solvent comprising a copolymer containing first monomers and second monomers. Another composition comprises an activator of 6-12 percent by weight of glutaric acid, pimelic acid, tartaric acid, or mixtures thereof, and a medium-viscosity solvent of 88-94 percent by weight comprising a polymer with hydroxyl end groups. Another composition comprises an activator in a liquid state comprising poly(ethylene glycol)-diacid, and a medium-viscosity solvent comprising a polymer with hydroxyl end groups. A soldering method for joining objects is also provided, comprising the steps of applying a flux composition to at least a portion of one or more of the objects, and joining the objects.

Abstract translation: 本发明涉及助焊剂组合物及其用途。 一种组合物包含活化剂，中等粘度溶剂为聚合物，高粘度溶剂为包含第一单体和第二单体的共聚物。 另一组合物包含活化剂和包含含有第一单体和第二单体的共聚物的高粘度溶剂。 另一组合物包含6-12重量％的戊二酸，庚二酸，酒石酸或其混合物的活化剂和88-94重量％的中等粘度溶剂，其包含具有羟基端基的聚合物。 另一种组合物包含液态的活化剂，其包含聚（乙二醇） - 二酸，以及包含具有羟基端基的聚合物的中等粘度溶剂。 还提供了一种用于接合物体的焊接方法，包括以下步骤：将焊剂组合物施加到一个或多个物体的至少一部分，并且连接物体。

公开(公告)号：US20110237004A1

公开(公告)日：2011-09-29

申请号：US13154165

申请日：2011-06-06

Applicant: Kang-Wook Lee ,  Gu-Sung Kim ,  Dong-Hyeon Jang ,  Seung-Duk Baek ,  Jae-Sik Chung

Inventor： Kang-Wook Lee ,  Gu-Sung Kim ,  Dong-Hyeon Jang ,  Seung-Duk Baek ,  Jae-Sik Chung

IPC: H01L21/66

CPC classification number: H01L25/50 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/5389 ,  H01L24/24 ,  H01L24/48 ,  H01L24/82 ,  H01L24/97 ,  H01L25/0657 ,  H01L2224/05001 ,  H01L2224/05008 ,  H01L2224/05022 ,  H01L2224/05024 ,  H01L2224/05124 ,  H01L2224/05166 ,  H01L2224/05548 ,  H01L2224/05556 ,  H01L2224/05569 ,  H01L2224/13025 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/24226 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48095 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2225/06586 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/18162 ,  Y02P80/30 ,  Y10S438/977 ,  Y10T436/104998 ,  Y10T436/108331 ,  Y10T436/17 ,  Y10T436/175383 ,  H01L2224/81 ,  H01L2224/82 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: A method for manufacturing chip stack packages may include: providing at least two wafers, each wafer having a plurality of chips, and scribe lanes formed between and separating adjacent chips; forming a plurality of via holes in peripheral portions of the scribe lanes; forming connection vias by filling the via holes; establishing electrical connections between the chip pads and corresponding connection vias; removing material from the back sides of the wafers to form thinned wafers; separating the thinned wafers into individual chips by removing a central portion of each scribe lane; attaching a first plurality of individual chips to a test wafer; attaching a second plurality of individual chips to the first plurality of individual chips to form a plurality of chip stack structures; encapsulating the plurality of chip stack structures; and separating the plurality of chip stack structures to form individual chip stack packages.

Abstract translation: 用于制造芯片堆叠封装的方法可以包括：提供至少两个晶片，每个晶片具有多个芯片，以及在相邻芯片之间形成并分隔相邻芯片的划线; 在划线的周边部分形成多个通孔; 通过填充通孔形成连接通孔; 建立芯片焊盘和相应的连接通孔之间的电连接; 从晶片的背面去除材料以形成薄的晶片; 通过去除每个划线的中心部分将薄的晶片分离成单独的芯片; 将第一多个独立芯片附接到测试晶片; 将第二多个独立芯片附接到所述第一多个独立芯片以形成多个芯片堆叠结构; 封装所述多个芯片堆叠结构; 以及分离所述多个芯片堆叠结构以形成单独的芯片堆叠封装。

公开(公告)号：US07977156B2

公开(公告)日：2011-07-12

申请号：US12385855

申请日：2009-04-22

Applicant: Kang-Wook Lee ,  Gu-Sung Kim ,  Dong-Hyeon Jang ,  Seung-Duk Baek ,  Jae-Sik Chung

Inventor： Kang-Wook Lee ,  Gu-Sung Kim ,  Dong-Hyeon Jang ,  Seung-Duk Baek ,  Jae-Sik Chung

IPC: H01L21/00 ,  H01L21/26 ,  H01L21/44 ,  H01L29/40

CPC classification number: H01L25/50 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/5389 ,  H01L24/24 ,  H01L24/48 ,  H01L24/82 ,  H01L24/97 ,  H01L25/0657 ,  H01L2224/05001 ,  H01L2224/05008 ,  H01L2224/05022 ,  H01L2224/05024 ,  H01L2224/05124 ,  H01L2224/05166 ,  H01L2224/05548 ,  H01L2224/05556 ,  H01L2224/05569 ,  H01L2224/13025 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/24226 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48095 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2225/06586 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/18162 ,  Y02P80/30 ,  Y10S438/977 ,  Y10T436/104998 ,  Y10T436/108331 ,  Y10T436/17 ,  Y10T436/175383 ,  H01L2224/81 ,  H01L2224/82 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: A method for manufacturing chip stack packages may include: providing at least two wafers, each wafer having a plurality of chips, and scribe lanes formed between and separating adjacent chips; forming a plurality of via holes in peripheral portions of the scribe lanes; forming connection vias by filling the via holes; establishing electrical connections between the chip pads and corresponding connection vias; removing material from the back sides of the wafers to form thinned wafers; separating the thinned wafers into individual chips by removing a central portion of each scribe lane; attaching a first plurality of individual chips to a test wafer; attaching a second plurality of individual chips to the first plurality of individual chips to form a plurality of chip stack structures; encapsulating the plurality of chip stack structures; and separating the plurality of chip stack structures to form individual chip stack packages.

Abstract translation: 用于制造芯片堆叠封装的方法可以包括：提供至少两个晶片，每个晶片具有多个芯片，以及在相邻芯片之间形成并分隔相邻芯片的划线; 在划线的周边部分形成多个通孔; 通过填充通孔形成连接通孔; 建立芯片焊盘和相应的连接通孔之间的电连接; 从晶片的背面去除材料以形成薄的晶片; 通过去除每个划线的中心部分将薄的晶片分离成单独的芯片; 将第一多个独立芯片附接到测试晶片; 将第二多个独立芯片附接到所述第一多个独立芯片以形成多个芯片堆叠结构; 封装所述多个芯片堆叠结构; 以及分离所述多个芯片堆叠结构以形成单独的芯片堆叠封装。

公开(公告)号：US07875552B2

公开(公告)日：2011-01-25

申请号：US12476793

申请日：2009-06-02

Applicant: Ho-Jin Lee ,  Kang-Wook Lee ,  Myeong-Soon Park ,  Ju-il Choi ,  Son-Kwan Hwang

Inventor： Ho-Jin Lee ,  Kang-Wook Lee ,  Myeong-Soon Park ,  Ju-il Choi ,  Son-Kwan Hwang

IPC: H01L23/48

CPC classification number: H01L23/528 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/5226 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/06181 ,  H01L2224/13009 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/48145 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/15311 ,  H01L2924/00012

Abstract: Methods of forming an integrated circuit device include forming an interlayer dielectric layer on a first surface of a semiconductor substrate and then forming an interconnect hole that extends through the interlayer dielectric layer and into the semiconductor substrate. A first sidewall spacer layer is formed on a sidewall of the interconnect hole. The semiconductor substrate at a bottom of the interconnect hole is isotropically etched to define an undercut recess in the semiconductor substrate. This etching step is performed using the first sidewall spacer layer as an etching mask. The interconnect hole and the uncut recess are then filled with a through-via electrode. A second surface of the semiconductor substrate is removed for a sufficient duration to expose the uncut recess containing the through-via electrode.

Abstract translation: 形成集成电路器件的方法包括在半导体衬底的第一表面上形成层间电介质层，然后形成延伸穿过层间电介质层并进入半导体衬底的互连孔。 第一侧壁间隔层形成在互连孔的侧壁上。 在互连孔的底部的半导体衬底被各向同性蚀刻以在半导体衬底中限定底切凹部。 该蚀刻步骤使用第一侧壁间隔层作为蚀刻掩模进行。 然后用通孔电极填充互连孔和未切割凹部。 去除半导体衬底的第二表面足够的持续时间以露出包含通孔电极的未切割凹部。

公开(公告)号：US20100320597A1

公开(公告)日：2010-12-23

申请号：US12805321

申请日：2010-07-26

Applicant: Kang-Wook Lee ,  Se-Yong Oh ,  Young-Hee Song ,  Gu-Sung Kim

Inventor： Kang-Wook Lee ,  Se-Yong Oh ,  Young-Hee Song ,  Gu-Sung Kim

IPC: H01L23/48

CPC classification number: H01L25/50 ,  H01L23/3128 ,  H01L23/481 ,  H01L23/5389 ,  H01L24/05 ,  H01L24/06 ,  H01L24/16 ,  H01L24/48 ,  H01L24/49 ,  H01L24/94 ,  H01L25/0657 ,  H01L2224/02372 ,  H01L2224/02379 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05009 ,  H01L2224/06181 ,  H01L2224/13025 ,  H01L2224/13099 ,  H01L2224/14181 ,  H01L2224/16145 ,  H01L2224/16146 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/32014 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48095 ,  H01L2224/48227 ,  H01L2224/49171 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2224/94 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06524 ,  H01L2225/06527 ,  H01L2225/06541 ,  H01L2225/06582 ,  H01L2225/06589 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01033 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/30107 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: A system-in-package, comprising a wafer level stack structure, including at least one first device chip including a first device region having a plurality of input/output(I/O) pads, and at least one second device chip including a second device region having a plurality of input/output(I/O) pads and a second peripheral region surrounding the second device region, wherein the size of the second device region is different from the size of the first device region, wherein the at least one first device chip and the at least one second device chip have approximately equal size; and a common circuit board to which the wafer level stack structure is connected.

Abstract translation: 一种系统级封装，包括晶片级堆叠结构，其包括至少一个包括具有多个输入/输出（I / O）焊盘的第一器件区域的第一器件芯片，以及包括第二器件芯片的至少一个第二器件芯片 器件区域具有多个输入/输出（I / O）焊盘和围绕第二器件区域的第二外围区域，其中第二器件区域的尺寸不同于第一器件区域的尺寸，其中至少一个 第一器件芯片和至少一个第二器件芯片具有大致相等的尺寸; 以及连接晶片级堆叠结构的公共电路板。

公开(公告)号：US20100218894A1

公开(公告)日：2010-09-02

申请号：US12780339

申请日：2010-05-14

Applicant: Claude Blais ,  Eric Duchesne ,  Kang-Wook Lee ,  Sylvain Ouimet ,  Gerald J. Scilla

Inventor： Claude Blais ,  Eric Duchesne ,  Kang-Wook Lee ,  Sylvain Ouimet ,  Gerald J. Scilla

IPC: C23F1/08 ,  H01L21/306

CPC classification number: H01L21/02057 ,  H01L23/3128 ,  H01L2224/16225 ,  H01L2224/73204 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/15311 ,  H01L2224/0401

Abstract: A method of removing and/or reducing undesirable contaminants removes residues including graphitic layers, fluorinate layers, calcium sulfate (CaSO4) particles, tin oxides and organotin, from a chip passivation layer surface. The method uses a plasma process with an argon and oxygen mixture with optimized plasma parameters to remove both the graphitic and fluorinated layers and to reduce the level of the inorganic/tin oxides/organotin residue from an integrated circuit wafer while keeping the re-deposition of metallic compounds is negligible. This invention discloses the plasma processes that organics are not re-deposited from polymers to solder ball surfaces and tin oxide thickness does not increase on solder balls. The ratio of argon/oxygen is from about 50% to about 99% Ar and about 1% to about 50% O2 by volume. Incoming wafers, after treatment, are then diced to form individual chips that are employed to produce flip chip plastic ball grid array packages.

Abstract translation: 去除和/或减少不需要的污染物的方法从芯片钝化层表面去除残留物，包括石墨层，氟化物层，硫酸钙（CaSO 4）颗粒，氧化锡和有机锡。 该方法使用具有优化的等离子体参数的具有氩和氧混合物的等离子体处理以除去石墨和氟化层，并且从集成电路晶片中降低无机/锡氧化物/有机锡残余物的水平，同时保持重新沉积 金属化合物可忽略不计。 本发明公开了等离子体方法，有机物不会从聚合物重新沉积到焊球表面，氧化锡厚度在焊球上不增加。 氩/氧的比例为约50％至约99％Ar和约1％至约50％体积的O 2。 接下来的处理后的晶片被切割成用于制造倒装芯片塑料球栅阵列封装的单个芯片。

公开(公告)号：US07780801B2

公开(公告)日：2010-08-24

申请号：US11493724

申请日：2006-07-26

Applicant: Eric Duchesne ,  Kang-Wook Lee ,  Valerie Oberson

Inventor： Eric Duchesne ,  Kang-Wook Lee ,  Valerie Oberson

IPC: B23K35/28

CPC classification number: B23K35/362 ,  Y10T428/12493

Abstract: The invention relates to a composition of matter comprising a soldering flux, wherein the flux consists essentially of a combination of a fluxing agent and a solvent, and wherein the fluxing agent comprises a keto acid such as levulinic acid or acetylbutyric acid. The flux may also comprises an ester acid, or comprises a mixture of the keto acid with the ester acid. The solvent comprises a mixture of a tacky solvent with a non-tacky solvent. The invention also relates to a process comprising soldering at least two surfaces together, each of which comprises a metal area to which solder can adhere by employing the following steps in any order: applying solder to at least one of the metal areas, aligning the metal areas so that they are superimposed over one another, heating at least one of the areas to a temperature that comprises at least the melting temperature of the solder. The last step comprises joining the superimposed areas to one another. The process employs the flux composition operatively associated with the solder, and in one embodiment the invention comprises a mixture of the flux composition with powdered solder. In another embodiment, the process comprises IMS, C4 and C4NP processes and the solder comprises a lead free solder. The invention also comprises a product produced by the foregoing process or processes.

Abstract translation: 本发明涉及包含助焊剂的物质组合物，其中助熔剂基本上由助熔剂和溶剂的组合组成，并且其中助熔剂包括酮酸，例如乙酰丙酸或乙酰基丁酸。 助熔剂还可以包含酯酸，或包含酮酸与酯酸的混合物。 溶剂包括粘性溶剂与非粘性溶剂的混合物。 本发明还涉及一种方法，其包括将至少两个表面焊接在一起，每个表面包括金属区域，焊料可以以任何顺序通过以下步骤粘附到该金属区域：将焊料施加到至少一个金属区域，使金属对准 区域，使得它们彼此叠加，将至少一个区域加热至至少包括焊料的熔化温度的温度。 最后一步包括将叠加的区域相互连接。 该方法使用与焊料可操作地相关联的助熔剂组合物，并且在一个实施方案中，本发明包括焊剂组合物与粉末焊料的混合物。 在另一个实施方案中，该方法包括IMS，C4和C4NP方法，焊料包括无铅焊料。 本发明还包括通过前述方法或方法生产的产品。

公开(公告)号：US07740713B2

公开(公告)日：2010-06-22

申请号：US10834293

申请日：2004-04-28

Applicant: Eric Duchesne ,  Michael Gaynes ,  Timothy A. Gosselin ,  Kang-Wook Lee ,  Valerie Oberson

Inventor： Eric Duchesne ,  Michael Gaynes ,  Timothy A. Gosselin ,  Kang-Wook Lee ,  Valerie Oberson

IPC: B23K35/34

CPC classification number: B23K35/3618 ,  B23K35/3615 ,  B23K35/3616 ,  H05K3/3484 ,  H05K3/3489

Abstract: The present invention is directed to soldering techniques and compositions for use therein. In one aspect, a flux composition is provided. The flux composition comprises a fluxing agent comprising organic acid, an organic tacking agent and an organic wetting agent. In another aspect, a soldering method for joining objects is provided comprising the following steps. A flux composition and a solder compound are applied to at least a portion of one or more of the objects. The flux composition comprises a fluxing agent comprising organic acid, an organic tacking agent and an organic wetting agent. The objects are then joined.

Abstract translation: 本发明涉及用于其中的焊接技术和组合物。 一方面，提供助焊剂组合物。 助熔剂组合物包含助熔剂，其包含有机酸，有机粘合剂和有机润湿剂。 另一方面，提供了一种用于连接物体的焊接方法，包括以下步骤。 将助焊剂组合物和焊料化合物施加到一个或多个物体的至少一部分上。 助熔剂组合物包含助熔剂，其包含有机酸，有机粘合剂和有机润湿剂。 然后连接对象。

公开(公告)号：US07534656B2

公开(公告)日：2009-05-19

申请号：US11878220

申请日：2007-07-23

Applicant: Yong-Chai Kwon ,  Kang-Wook Lee ,  Gu-Sung Kim ,  Seong-Il Han ,  Keum-Hee Ma ,  Suk-Chae Kang ,  Dong-Hyeon Jang

Inventor： Yong-Chai Kwon ,  Kang-Wook Lee ,  Gu-Sung Kim ,  Seong-Il Han ,  Keum-Hee Ma ,  Suk-Chae Kang ,  Dong-Hyeon Jang

IPC: H01L21/00 ,  H01L21/44 ,  H01L21/48 ,  H01L21/50 ,  H01L21/46 ,  H01L21/78 ,  H01L21/301

CPC classification number: H01L27/14618 ,  H01L27/1464 ,  H01L27/14685 ,  H01L2224/48091 ,  H04N5/2257 ,  H01L2924/00014

Abstract: An image sensor device including a protective plate may be manufactured from an image sensor chip having an active surface and a back surface opposite to the active surface. The image sensor chip may include chip pads formed in a peripheral region of the active surface, a microlens formed in a central region of the active surface and an intermediate region between the peripheral and central regions. A protective plate may be attached to the intermediate region of the active surface of the image sensor chip using an adhesive pattern that is sized and configured to maintain a separation distance between the protective plate and the microlens formed on the image sensor chip. Conductive plugs, formed before, during or after the manufacture of the image sensor chip circuitry may provide electrical connection between the chip pads and external connectors.

Abstract translation: 包括保护板的图像传感器装置可以由具有与活性表面相对的活性表面和背面的图像传感器芯片制造。 图像传感器芯片可以包括形成在有源表面的周边区域中的芯片焊盘，形成在有源表面的中心区域中的微透镜和在周边区域和中心区域之间的中间区域。 可以使用粘合剂图案将保护板附接到图像传感器芯片的有效表面的中间区域，该粘合剂图案的尺寸和构造用于保持保护板和形成在图像传感器芯片上的微透镜之间的间隔距离。 在图像传感器芯片电路制造之前，期间或之后形成的导电插塞可以提供芯片焊盘和外部连接器之间的电连接。