公开(公告)号：US20070241638A1

公开(公告)日：2007-10-18

申请号：US11812367

申请日：2007-06-18

申请人： Noritaka Nakaso ,  Kazushi Yamanaka

发明人： Noritaka Nakaso ,  Kazushi Yamanaka

IPC分类号： H03H9/145

CPC分类号： H03H9/02614 ,  G01N29/022 ,  G01N29/2462 ,  H03H9/02535 ,  H03H9/02543 ,  H03H9/25

摘要： A surface acoustic wave device includes a three-dimensional substrate having an annular curved surface enabling to propagate a surface acoustic wave, and an electro-acoustic transducing element, which excites and propagates the surface wave along the surface, and receives the propagated surface wave. The substrate is made of a Li2B4O7, Bi12SiO20, LiNbO3, LiTaO3, or quartz crystal, and the element propagates the surface wave along a line of intersection between a crystal face of the crystal and the surface, and the line of intersection is defined as an outermost circumferential line of the surface. An environmental difference detecting apparatus uses the device having a plurality of propagating surface zones and compares surface acoustic wave reception signals of electro-acoustic transducing elements in the propagating surface zones of the device with each other, and detects an environmental difference in space portions with which the propagating surface zones come into contact.

公开(公告)号：US06856218B2

公开(公告)日：2005-02-15

申请号：US10329445

申请日：2002-12-27

申请人： Takashi Yamazaki ,  Keigo Iizawa ,  Shigeo Kanna

发明人： Takashi Yamazaki ,  Keigo Iizawa ,  Shigeo Kanna

IPC分类号： H03H9/02 ,  H03H9/25 ,  H03H9/64

CPC分类号： H03H9/25 ,  H03H9/02543

摘要： The invention provides an in-plane rotational ST-cut SAW resonator that is formed of an in-plane rotational ST-cut crystal plate having Eulerian angles of (0°, 113° to 135°, and ±(40° to 49°)). The in-plane rotational ST-cut SAW resonator can include an interdigital transducer (IDT) electrode for exciting a Rayleigh wave on the main surface. The ratio Lt/Pt of the electrode width Lt and the interelectrode pitch Pt of the IDT electrode is 0.5 or more and 0.65 or less. Accordingly, a reduction in the fluctuation in resonance frequency relative to the variations in an IDT electrode of a surface acoustic wave device by using the in-plane rotated ST-cut crystal plate around the Z′-axis can be achieved.

摘要翻译： 本发明提供一种面内旋转ST切割SAW谐振器，其由具有（0°，113°至135°和±（40°至49°））的欧拉角的平面内旋转ST切割晶体板形成， ）。 平面内旋转ST切割SAW谐振器可以包括用于激励主表面上的瑞利波的叉指式换能器（IDT）电极。 电极宽度Lt的比率Lt / Pt和IDT电极的电极间间距Pt为0.5以上且0.65以下。 因此，通过使用围绕Z'轴的平面内旋转的ST切割晶体板，可以实现相对于声表面波器件的IDT电极的变化的共振频率的波动的减小。

公开(公告)号：US20030164657A1

公开(公告)日：2003-09-04

申请号：US09968820

申请日：2001-10-02

发明人： Kenji Inoue ,  Katsuo Sato ,  Hiroki Morikoshi ,  Katsumi Kawasaki ,  Jun Sato

IPC分类号： H01L041/04

CPC分类号： H03H9/02543

摘要： A compact and wide band surface acoustic wave device for intermediate-frequency is disclosed. A piezoelectric substrate for use in a surface acoustic wave device having high electromechanical coupling factor and low SAW velocity is also disclosed. The surface acoustic wave device is constituted of a piezoelectric substrate 1 and inter-digital electrodes 2, 2 formed on the piezoelectric substrate 1. The piezoelectric substrate 1 has a crystal structure of Ca3Ga2Ge4O14 and is represented by the chemical formula, Ca3TaGa3Si2O14. A cut angle of the piezoelectric substrate 1 cut out of the single crystal and a direction of propagation of surface acoustic waves on the piezoelectric substrate represented in terms of Euler's angles (null, null, null) are found in an area represented by null2.5nullnullnullnull2.5null, 30nullnullnullnull90null, and null65nullnullnullnull65null.

摘要翻译： 公开了一种用于中频的紧凑且宽带声表面波装置。 还公开了一种用于具有高机电耦合系数和低SAW速度的表面声波装置中的压电基片。 表面声波装置由压电基片1和形成在压电基片1上的数字间电极2,2构成。压电基片1具有Ca 3 Ga 2 Ge 4 O 14的晶体结构，由化学式Ca 3 Ta Ga 3 Si 2 O 14表示。 从欧姆角（phi，θ，psi）表示的压电基板上切出的压电基板1的切割角和压电基板上的表面声波的传播方向在-2.5° <= phi <= 2.5°，30°<=θ<= 90°，-65°<= psi <= 65°。

公开(公告)号：US20030146810A1

公开(公告)日：2003-08-07

申请号：US10329445

申请日：2002-12-27

申请人： SEIKO EPSON CORPORATION

发明人： Takashi Yamazaki ,  Keigo Iizawa ,  Shigeo Kanna

IPC分类号： H03H009/64

CPC分类号： H03H9/25 ,  H03H9/02543

摘要： The invention provides an in-plane rotational ST-cut SAW resonator that is formed of an in-plane rotational ST-cut crystal plate having Eulerian angles of (0null, 113null to 135null, and null(40null to 49null)). The in-plane rotational ST-cut SAW resonator can include an interdigital transducer (IDT) electrode for exciting a Rayleigh wave on the main surface. The ratio Lt/Pt of the electrode width Lt and the interelectrode pitch Pt of the IDT electrode is 0.5 or more and 0.65 or less. Accordingly, a reduction in the fluctuation in resonance frequency relative to the variations in an IDT electrode of a surface acoustic wave device by using the in-plane rotated ST-cut crystal plate around the Znull-axis can be achieved.

摘要翻译： 本发明提供一种面内旋转ST切割SAW谐振器，其由具有（0°，113°至135°和±（40°至49°））的欧拉角的平面内旋转ST切割晶体板形成， ）。 平面内旋转ST切割SAW谐振器可以包括用于激励主表面上的瑞利波的叉指式换能器（IDT）电极。 电极宽度Lt的比率Lt / Pt和IDT电极的电极间间距Pt为0.5以上且0.65以下。 因此，通过使用围绕Z'轴的平面内旋转的ST切割晶体板，可以实现相对于声表面波器件的IDT电极的变化的共振频率的波动的减小。

公开(公告)号：US20030146481A1

公开(公告)日：2003-08-07

申请号：US10332958

申请日：2003-01-14

发明人： Kenji Inoue ,  Katsuo Sato ,  Hiroki Morikoshi ,  Jun Sato

IPC分类号： H01L029/82

CPC分类号： H03H9/02543

摘要： An object of the invention is to achieve a wider passband and reduction in size of a surface acoustic wave device. The surface acoustic wave device comprises a piezoelectric substrate (1) and a pair of interdigitated electrodes (2) provided on one main surface of the piezoelectric substrate (1). As the material of the piezoelectric substrate (1), a single crystal belonging to the point group 32, having a crystal structure of Ca3Ga2Ge4O14 type, containing Ca, Nb, Ga, Si and O as main components, and being represented by the chemical formula Ca3NbGa3Si2O14 is used. The cut angle of the substrate (1) and the propagation direction can be selected as appropriate to thereby realize the substrate (1) which has a large electromechanical coupling coefficient that is effective to achieve a wider passband and a low SAW velocity that is effective to reduce the size of a surface acoustic wave device.

摘要翻译： 本发明的一个目的是实现更大的通带和减小声表面波装置的尺寸。 表面声波装置包括压电基片（1）和设置在压电基片（1）的一个主表面上的一对叉指电极（2）。 作为压电基板（1）的材料，属于具有Ca 3 Ga 2 Ge 4 O 14型晶体结构的点组32的单晶，含有Ca，Nb，Ga，Si和O作为主要成分，并且由化学式 使用Ca3NbGa3Si2O14。 可以适当选择基板（1）的切割角度和传播方向，从而实现具有大的机电耦合系数的基板（1），其有效地实现更宽的通带和低的SAW速度， 减小声表面波器件的尺寸。

公开(公告)号：US06342748B1

公开(公告)日：2002-01-29

申请号：US09431398

申请日：1999-11-01

申请人： Yukinori Nakamura ,  Tomohiko Shibata

发明人： Yukinori Nakamura ,  Tomohiko Shibata

IPC分类号： H01L4108

CPC分类号： H03H9/02543

摘要： A sapphire single crystal wafer 11 having a diameter not less than two inches and having an off-angled surface which is obtained by rotating an R (1-102) surface about an axis in a negative direction by a given off-angle not less than 2° is introduced in a CVD apparatus. While the sapphire substrate is kept at a temperature of about 950° C., a buffer layer made of gallium nitride or aluminum-gallium nitride is first deposited with an average thickness of 0.1-0.2 &mgr;m, and then an aluminum nitride single crystal layer is deposited with an average thickness not less than 2 &mgr;m. The thus obtained aluminum nitride single crystal layer does not have a significant amount of cracks, has an excellent piezoelectric property, and has a high propagating velocity.

摘要翻译： 具有直径不小于2英寸并且具有偏斜表面的蓝宝石单晶晶片11，其通过使R（1-102）表面围绕轴线在负方向上旋转不小于 在CVD装置中引入2°。 当蓝宝石衬底保持在约950℃的温度下时，首先沉积由氮化镓或氮化镓 - 氮化镓制成的缓冲层，平均厚度为0.1-0.2μm，然后将氮化铝单晶层 沉积的平均厚度不小于2μm。 由此获得的氮化铝单晶层不具有显着的裂纹，具有优异的压电性能，并且具有高的传播速度。

公开(公告)号：US06259186B1

公开(公告)日：2001-07-10

申请号：US09453832

申请日：1999-12-02

申请人： Yoshihiko Shibata ,  Naohiro Kuze

发明人： Yoshihiko Shibata ,  Naohiro Kuze

IPC分类号： H01L4104

CPC分类号： H03H9/02559 ,  H03H9/02543

摘要： A surface acoustic wave element includes a LiNbxTa1−xO3 (‘x’ is 0 or more and 1 or less) film on a (012) sapphire substrate, in which a Love wave is propagated as a surface acoustic wave in a specific direction of the LiNbxTa1−xO3 film. Preferably, a crystal axis of the sapphire substrate and a crystal axis of a (012) LiNbxTa1−xO3 film (‘x’ is 0 or more and 1 or less) are parallel to each other; a surface acoustic wave propagation direction is within a range of ±20 degrees around an axis vertical to a C-axis projection line direction of a crystal axis of the sapphire substrate or the (012) LiNbxTa1−xO3 film. Alternatively, a C-axis projection line direction of a crystal axis of the sapphire substrate and a C-axis direction of a crystal axis of a (100) LiNbxTa1−xO3 film (‘x’ is 0 or more and 1 or less) are parallel to each other, and the surface acoustic wave propagation direction is within a range of ±35 degrees around an axis vertical to a C-axis projection line direction of a crystal axis of the sapphire substrate. A piezoelectric substrate preferably has an intermediate layer including of a metal or a metal oxide between the sapphire substrate and the (100) LiNbxTa1−xO3 (‘x’ is 0 or more and 1 or less).

摘要翻译： 表面声波元件包括在（012）蓝宝石衬底上的LiNb x Ta 1-x O 3（“x”为0以上且1以下）的膜，其中，爱波作为表面声波在特定方向上传播 LiNb x Ta 1-x O 3膜优选蓝宝石衬底的晶轴和（012）LiNb x Ta 1-x O 3膜的晶轴（“x”为0以上且1以下）彼此平行; 表面声波传播方向在与蓝宝石衬底或（012）LiNb x Ta 1-x O 3膜的晶轴的C轴投影线方向垂直的轴的±20度的范围内。 或者，蓝宝石基板的晶轴的C轴投影线方向和（100）LiNb x Ta 1-x O 3膜（“x”为0以上且1以下）的晶轴的C轴方向为 彼此平行，弹性表面波传播方向在与蓝宝石基板的晶轴的C轴投影线方向垂直的轴的±35度的范围内，压电基板优选具有中间层， 的蓝宝石衬底和（100）LiNb x Ta 1-x O 3之间的金属或金属氧化物（“x”为0以上且1以下）。

公开(公告)号：US5936329A

公开(公告)日：1999-08-10

申请号：US936614

申请日：1997-09-24

申请人： Tomohiko Shibata ,  Yukinori Nakamura

发明人： Tomohiko Shibata ,  Yukinori Nakamura

IPC分类号： C30B29/38 ,  H01L41/09 ,  H01L41/39 ,  H03H3/08 ,  H03H9/02 ,  H03H9/25 ,  H01L41/08

CPC分类号： H03H3/08 ,  H03H9/02543

摘要： A sapphire single crystal wafer 11 having a diameter not less than two inches and having an off-angled surface which is obtained by rotating an R (1-102) surface about a �11-20! axis by a given off-angle is introduced in a CVD apparatus, and a double-layer structure of first and second aluminum single crystal layers 12 and 13 is deposited on the off-angled surface of the sapphire single crystal wafer by MOCVD. The thus deposited aluminum single crystal layer 13 has (1-210) surface. The first aluminum nitride single crystal layer 12 serves as a buffer layer and has a thickness of 5-50 nm, and the second aluminum nitride single crystal layer 13 has a thickness not less than 1 .mu.m. The off-angle is preferably set to a value not less than .+-.1.degree., much preferably a value .+-.2.degree., more preferably a value not less than -3.degree., and particularly preferable to a value within a range from -2.degree.-+10.degree.. The thus obtained aluminum nitride single crystal layer 12, 13 has no clack formed therein, has an excellent piezo-electric property, and has a high propagating velocity for surface acoustic wave.

摘要翻译： 引入直径不小于2英寸并且具有通过以[11-20]轴旋转给定偏角将R（1-102）表面旋转获得的偏斜表面的蓝宝石单晶晶片11 在CVD装置中，通过MOCVD将第一和第二铝单晶层12和13的双层结构沉积在蓝宝石单晶晶片的偏斜表面上。 这样沉积的铝单晶层13具有（1-210）表面。 第一氮化铝单晶层12用作缓冲层，厚度为5-50nm，第二氮化铝单晶层13的厚度不小于1μm。 偏角优选设定为不小于+/- 1°，更优选为+/- 2°的值，更优选为不小于-3°的值，特别优选为 -2° - + 10°。 由此获得的氮化铝单晶层12,13没有形成其中的爪，具有优异的压电特性，并且具有高的表面声波传播速度。

公开(公告)号：US5302877A

公开(公告)日：1994-04-12

申请号：US29514

申请日：1993-03-11

申请人： Takahiro Sato ,  Hidenori Abe

发明人： Takahiro Sato ,  Hidenori Abe

IPC分类号： H03H9/25 ,  H03H9/02 ,  H03H9/64 ,  H01L41/08

CPC分类号： H03H9/02543

摘要： A surface acoustic wave device comprises lithium tetraborate single crystal substrate to make use of surface acoustic waves with higher propagation velocities and smaller propagation losses, whereby frequencies to be signal-processed can be as high as above 1 GHz. The surface acoustic wave device comprises a metal film formed on a surface of a lithium tetraborate single crystal substrate, the metal film being for exciting, receiving, reflecting and/or propagating surface acoustic waves, the metal film being so formed that a cut angle of the substrate, and a propagation direction of the surface acoustic waves are in an Eulerian angle representation of (39.degree.-51.degree., 66.degree.-114.degree., -20.degree.-20.degree.) and directions equivalent thereto. In this propagation direction few Rayleigh waves exit, and only surface acoustic waves of high propagation velocity are generated. Propagation losses can be eliminated.

摘要翻译： 表面声波装置包括四硼酸锂单晶基板，以利用具有较高传播速度和较小传播损耗的表面声波，由此待信号处理的频率可高达1GHz以上。 表面声波装置包括形成在四硼酸锂单晶基板的表面上的金属膜，金属膜用于激发，接收，反射和/或传播表面声波，金属膜被形成为使得金属膜的切割角度 衬底和表面声波的传播方向处于（39度-51度，66度-114度，-20度-20度）和与此相当的方向的欧拉角度表示。 在这个传播方向上，很少的瑞利波出射，只有高传播速度的表面声波才产生。 传播损失可以消除。

公开(公告)号：US4672255A

公开(公告)日：1987-06-09

申请号：US896327

申请日：1986-08-14

申请人： Hitoshi Suzuki ,  Yasuo Ebata ,  Sadao Matsumura ,  Jisaburo Ushizawa

发明人： Hitoshi Suzuki ,  Yasuo Ebata ,  Sadao Matsumura ,  Jisaburo Ushizawa

IPC分类号： H03H9/02 ,  H03H9/42 ,  H01L41/08

CPC分类号： H03H9/42 ,  H03H9/02543 ,  H03H9/02834

摘要： A surface acoustic wave device has been developed, such as a surface acoustic wave filter in which a plurality of electroacoustic interdigital electrodes are formed, as thin films made principally of aluminum, on the surface of a Li.sub.2 B.sub.4 O.sub.7 single crystal substrate and a surface acoustic wave resonator, in which a plurality of electroacoustic interdigital electrodes and grating reflectors for reflecting the surface acoustic wave are formed, as thin films made principally of aluminum, on the surface of a Li.sub.2 B.sub.4 O.sub.7 single crystal substrate. Here, a cut angle, at which the substrate is cut from the Li.sub.2 B.sub.4 O.sub.7 single crystal, and the propagation direction of the surface acoustic wave are so set that, when the Eulerian angle representation is (90.degree..+-..lambda., 90.degree..+-..mu., 90.degree..+-..theta.), .lambda.=38.degree. to 52.degree., .mu.=0.degree. to 5.degree. and .theta.=0.degree. to 10.degree., whereby the TCD of the surface acoustic wave device is below .+-.5 ppm/.degree.C. and coupling coefficient K.sup.2 is about 1.0%, and the propagation speed suffers almost no angular dependence.

摘要翻译： 已经开发了表面声波装置，例如在Li2B4O7单晶基板的表面上形成多个电声交叉指状电极的表面声波滤波器，主要由铝制成的薄膜和表面声波谐振器 其中，在Li2B4O7单晶衬底的表面上形成多个用于反射表面声波的电声交指电极和光栅反射器，作为主要由铝制成的薄膜。 这里，从Li2B4O7单晶切割基板的切割角度和声表面波的传播方向设定为：当欧拉角度表示为（90°+/-λ，90°±/ - + 82,90°+/-θ），λ= 38°至52°，μ= 0°至5°，θ= 0°至10°，由此表面声波器件的TCD低于+/- 5ppm /℃，耦合系数K2约为1.0％，传播速度几乎没有角度依赖性。