摘要:
Disclosed is a dielectric ceramic having crystal grains mainly composed of barium titanate and an intergranular phase formed among the crystal grains. The dielectric ceramic contains certain amounts of manganese and at least one rare earth element (RE) selected from magnesium, gadolinium, terbium, dysprosium, holmium and erbium, in terms of oxides, per 1 mole of barium constituting the barium titanate. The dielectric ceramic also contains a certain amount of yttrium in terms of oxides, per 100 parts by mass of the barium titanate. The crystal grains have an average grain size of 0.05-0.2 μm. By using the dielectric ceramic as a dielectric layer, there can be obtained a capacitor having high capacity and stable capacitance temperature characteristics.
摘要:
A pyroelectric ceramic composition contains a compound represented by (Pb1−xCax)(1+a){(Ni1/3Nb2/3)yTi(1−y)}O3 (wherein x, y, and a satisfy 0.20≦x≦0.27, 0.01≦y≦0.06, and 0.001≦a≦0.02, respectively) as a main component and 0.3 to 2.5 mol of Mn per 100 mol of the main component. The amount of segregates containing Ni, Ti, and Mn is 1.0 vol % or less (including 0 vol %) of a fired sinter. A pyroelectric ceramic composition that has an adequately low insulation resistance and a high Curie temperature while achieving satisfactory pyroelectric properties is realized. Since the composition has a high Curie temperature, a thin, small pyroelectric element that withstands a reflow process can be obtained. Since the composition has a low insulation resistance, an infrared detector incorporating a pyroelectric element composed of the composition does not require a load resistance to be provided in parallel to the pyroelectric element and size reduction is possible.
摘要:
A low-loss Mn—Zn ferrite comprising Fe, Mn and Zn as main components, Co, Ca and Si as first sub-components, and at least one Va-group metal as a second sub-component: Fe and Zn being 53-56% by mol (calculated as Fe2O3) and 1-9% by mol (calculated as ZnO), respectively, and Mn being the balance, based on the total amount (100% by mol) of the main components; Co and Ca being 500-5000 ppm (calculated as Co3O4) and 3000 ppm or less (calculated as CaCO3), respectively, by mass based on the total amount of the main components, a mass ratio of Ca (calculated as CaCO3) to Si (calculated as SiO2) being 2 or more; Ta being 250 ppm or more (calculated as Ta2O5) among the Va-group metals; the ferrite having an average crystal grain size of less than 3.2 μm and volume resistivity ρ of 1 Ω·m or more, and a power loss Pcv of 350 kW/m3 or less in a range of 0° C.-120° C. at a frequency of 2 MHz and a magnetic flux density of 25 mT.
摘要翻译:作为主要成分的以Fe,Mn,Zn为主成分的低损耗Mn-Zn铁氧体,作为第一子成分的Co,Ca,Si以及作为第二副成分的至少一种Va族金属:Fe,Zn为53〜 56摩尔%(以Fe 2 O 3计)和1-9摩尔%(以ZnO计),Mn为主要成分的总量(100摩尔%),余量为Mn。 Co和Ca分别以质量计为主要成分的总量为500-5000ppm(以Co 3 O 4计算)和3000ppm以下(以CaCO 3计算),Ca(CaCO 3计)与Si (以SiO 2计算)为2以上; 在Va族金属中,Ta为250ppm以上(以Ta 2 O 5计) 平均晶粒尺寸小于3.2μm的铁素体和体积电阻率rgr; 在2MHz的频率和25mT的磁通密度下,在0℃-120℃的范围内的功率损耗Pcv为350kW / m 3以下。
摘要:
In a varistor element, Ca exists in the grain interior of grains consisting primarily of ZnO in a varistor element body and Ca also exists in a grain boundary. In this crystal structure Ca replaces oxygen defects in the grain interior of grains consisting primarily of ZnO, in the varistor element body to make the ceramic structure denser Such crystal structure also decreases a ratio of an element tending to degrade the stability of the temperature characteristic of the varistor element, e.g., Si as a firing aid, in the grain boundary between grains. As a result, the varistor element has a stable temperature characteristic, which can decrease change in capacitance and tan δ (thermal conversion factor of resistance) against change in temperature.
摘要:
Sialon materials suited for machining metal materials, having HFO2 present in a maximum of 1 mass-% as a sintering additive, methods of producing them and methods of using them.
摘要:
An aluminum nitride ceramic including aluminum nitride grains and grain boundary phases comprises a grain boundary phase-rich layer including more amount of the grain boundary phases in a surface layer of the aluminum nitride ceramic than in an inside of the aluminum nitride ceramic. The grain boundary phases in the grain boundary phase-rich layer include at least one of rare earth element and alkali earth element.
摘要:
A sliding member includes a silicon nitride sintered compact containing a rare earth element of 7 to 18 mass % in terms of oxide and at least one element M selected from Ti, Zr, Hf, V, Nb, Ta, Cr, Mo and W of 0.1 to 3 mass % in terms of oxide, and having a total content of impurity positive ion elements of 0.3 mass % or less and a thermal conductivity of 60 W/m·K or higher. The silicon nitride sintered compact includes silicon nitride crystal grains and a grain boundary phase, and has a ratio of crystalline compound phases in the grain boundary phase of 20% or more in area ratio, and an average grain size of the crystalline compound phases of 0.5 μm or less. The sliding member is used, for example, as a bearing ball 2.
摘要:
An electrostatic chuck that is a member for a semiconductor-manufacturing apparatus contains an yttrium oxide material containing first inorganic particles and second inorganic particles. The first inorganic particles form solid solutions in yttrium oxide, can be precipitated from yttrium oxide, and are present in grains of yttrium oxide. The second inorganic particles can form solid solutions in the first inorganic particles, are unlikely to form any solid solution in yttrium oxide, and are present at boundaries between the yttrium oxide grains. The first inorganic particles contain at least one of ZrO2 and HfO2. The second inorganic particles contain at least one selected from the group consisting of MgO, CaO, SrO, and BaO. The yttrium oxide material is produced in such a manner that solid solution particles are prepared by mixing and firing the first and second inorganic particles and are mixed with yttrium oxide and the mixture is fired.
摘要:
A monolithic semiconductor ceramic capacitor includes semiconductor ceramic layers made of a semiconductor ceramic having a Sr site and a Ti site. The semiconductor ceramic satisfies the inequality 1.000
摘要:
A piezoelectric ceramic which has a large value of coercive electric field and, in addition, which can be fired at low temperatures of 950° C. or lower, is provided. It has a composition represented by Pbx-a-dBiaM3d{M1b(M21/3Nb2/3)yZr1-b-y-zTiz}O3 where M1 and M2 represent, independently, at least one of Ni and Zn, and M3 represents at least one of Ba and Sr, 0.05≦a≦0.15, 0