公开(公告)号：US09490168B1

公开(公告)日：2016-11-08

申请号：US14710894

申请日：2015-05-13

Applicant: International Business Machines Corporation ,  GLOBALFOUNDRIES, INC. ,  STMicroelectronics, Inc.

Inventor： Shyng-Tsong Chen ,  Cheng Chi ,  Chi-Chun Liu ,  Sylvie M. Mignot ,  Yann A. Mignot ,  Hosadurga K. Shobha ,  Terry A. Spooner ,  Wenhui Wang ,  Yongan Xu

IPC: H01L21/28 ,  H01L21/768 ,  H01L23/535 ,  H01L23/528

CPC classification number: H01L21/76897 ,  H01L21/76802 ,  H01L21/76811 ,  H01L21/76816 ,  H01L21/76829 ,  H01L21/76834 ,  H01L21/76885 ,  H01L23/485 ,  H01L23/5226 ,  H01L23/5283 ,  H01L23/53238 ,  H01L23/53266 ,  H01L23/5329

Abstract: A method of forming a via to an underlying layer of a semiconductor device is provided. The method may include forming a pillar over the underlying layer using a sidewall image transfer process. A dielectric layer is formed over the pillar and the underlying layer; and a via mask patterned over the dielectric layer, the via mask having a mask opening at least partially overlapping the pillar. A via opening is etched in the dielectric layer using the via mask, the mask opening defining a first lateral dimension of the via opening in a first direction and the pillar defining a second lateral dimension of the via opening in a second direction different than the first direction. The via opening is filled with a conductor to form the via. A semiconductor device and via structure are also provided.

Abstract translation: 提供了形成通孔到半导体器件的下层的方法。 该方法可以包括使用侧壁图像转移过程在下层上形成柱。 介电层形成在柱和下层之上; 以及图案化在所述电介质层上的通孔掩模，所述通孔掩模具有至少部分地与所述支柱重叠的掩模开口。 使用通孔掩模在电介质层中蚀刻通孔开口，掩模开口在第一方向上限定通孔开口的第一横向尺寸，并且柱沿不同于第一方向的第二方向限定通孔开口的第二横向尺寸 方向。 通孔开口填充有导体以形成通孔。 还提供了半导体器件和通孔结构。

公开(公告)号：US09257334B2

公开(公告)日：2016-02-09

申请号：US14837865

申请日：2015-08-27

Applicant: International Business Machines Corporation ,  GLOBALFOUNDRIES Inc.

Inventor： Hsueh-Chung Chen ,  Yongan Xu ,  Yunpeng Yin ,  Ailian Zhao

IPC: H01L21/4763 ,  H01L21/768 ,  H01L21/033 ,  H01L21/311

CPC classification number: H01L21/76802 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/31144 ,  H01L21/76811 ,  H01L21/76816 ,  H01L21/76897 ,  H01L21/76898

Abstract: A method including forming a penta-layer hardmask above a substrate, the penta-layer hardmask comprising a first hardmask layer above a second hardmask layer; forming a trench pattern in the first hardmask layer; transferring a first via bar pattern from a first photo-resist layer above the penta-layer hardmask into the second hardmask layer resulting in a first via pattern, the first via pattern in the second hardmask layer overlapping the trench pattern and being self-aligned on two sides by the trench pattern in the first hardmask layer; and transferring the first via pattern from the second hardmask layer into the substrate resulting in a self-aligned via opening, the self-aligned via opening being self-aligned on all sides by the first via pattern in the second hardmask layer.

Abstract translation: 一种包括在衬底上形成五层硬掩模的方法，所述五层硬掩模包括在第二硬掩模层上方的第一硬掩模层; 在第一硬掩模层中形成沟槽图案; 将第一通孔条图案从五层硬掩模上方的第一光致抗蚀剂层转移到第二硬掩模层中，产生第一通孔图案，第二硬掩模层中的第一通孔图案与沟槽图案重叠并且在 双面通过第一个硬掩模层中的沟槽图案; 以及将所述第一通孔图案从所述第二硬掩模层转移到所述衬底中，从而产生自对准的通孔，所述自对准通孔开口通过所述第二硬掩模层中的所述第一通孔图案在所有侧面上自对准。

公开(公告)号：US20150364372A1

公开(公告)日：2015-12-17

申请号：US14837865

申请日：2015-08-27

Applicant: International Business Machines Corporation ,  GLOBAL FOUNDRIES Inc.

Inventor： Hsueh-Chung Chen ,  Yongan Xu ,  Yunpeng Yin ,  Ailian Zhao

IPC: H01L21/768 ,  H01L21/311 ,  H01L21/033

CPC classification number: H01L21/76802 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/31144 ,  H01L21/76811 ,  H01L21/76816 ,  H01L21/76897 ,  H01L21/76898

Abstract: A method including forming a penta-layer hardmask above a substrate, the penta-layer hardmask comprising a first hardmask layer above a second hardmask layer; forming a trench pattern in the first hardmask layer; transferring a first via bar pattern from a first photo-resist layer above the penta-layer hardmask into the second hardmask layer resulting in a first via pattern, the first via pattern in the second hardmask layer overlapping the trench pattern and being self-aligned on two sides by the trench pattern in the first hardmask layer; and transferring the first via pattern from the second hardmask layer into the substrate resulting in a self-aligned via opening, the self-aligned via opening being self-aligned on all sides by the first via pattern in the second hardmask layer.

Abstract translation: 一种包括在衬底上形成五层硬掩模的方法，所述五层硬掩模包括在第二硬掩模层上方的第一硬掩模层; 在第一硬掩模层中形成沟槽图案; 将第一通孔条图案从五层硬掩模上方的第一光致抗蚀剂层转移到第二硬掩模层中，产生第一通孔图案，第二硬掩模层中的第一通孔图案与沟槽图案重叠并且在 双面通过第一个硬掩模层中的沟槽图案; 以及将所述第一通孔图案从所述第二硬掩模层转移到所述衬底中，从而产生自对准的通孔，所述自对准通孔开口通过所述第二硬掩模层中的所述第一通孔图案在所有侧面上自对准。

公开(公告)号：US20150031201A1

公开(公告)日：2015-01-29

申请号：US14512718

申请日：2014-10-13

Applicant: International Business Machines Corporation

Inventor： Sivananda K. Kanakasabapathy ,  Chiahsun Tseng ,  Yongan Xu ,  Yunpeng Yin

IPC: H01L21/308 ,  H01L21/768

CPC classification number: H01L21/3083 ,  H01L21/0337 ,  H01L21/3081 ,  H01L21/31144 ,  H01L21/76801 ,  H01L21/76802 ,  H01L21/76816 ,  H01L23/544 ,  H01L2223/54426 ,  H01L2223/5446 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method including forming a tetra-layer hardmask above a substrate, the tetra-layer hardmask including a second hardmask layer above a first hardmask layer; removing a portion of the second hardmask layer of the tetra-layer hardmask within a pattern region of a structure comprising the substrate and the tetra-layer hardmask; forming a set of sidewall spacers above the tetra-layer hardmask to define a device pattern; and transferring a portion of the device pattern into the substrate and within the pattern region of the structure.

Abstract translation: 一种包括在衬底上形成四层硬掩模的方法，所述四层硬掩模包括在第一硬掩模层上方的第二硬掩模层; 在包括所述基底和所述四层硬掩模的结构的图案区域内去除所述四层硬掩模的所述第二硬掩模层的一部分; 在所述四层硬掩模之上形成一组侧壁间隔物以限定器件图案; 以及将所述器件图案的一部分转移到所述衬底中并且在所述结构的图案区域内。

公开(公告)号：US08927198B2

公开(公告)日：2015-01-06

申请号：US13741579

申请日：2013-01-15

Applicant: International Business Machines Corporation

Inventor： Martin Burkhardt ,  Yongan Xu

IPC: G03F1/44 ,  G03F1/00

CPC classification number: G03F1/144 ,  G03F1/36

Abstract: A two-dimensional dense array of contact holes can be printed on a negative photoresist employing a combination of a quadrupole illumination lens and a lithographic mask including a criss-cross pattern of opaque lines. The openings in the quadrupole illumination lens are aligned along the perpendicular directions of the opaque lines. Discrete contact holes can be printed on a negative photoresist employing a combination of a quadrupole illumination lens and a lithographic mask including a criss-cross pattern of opaque subresolution assist features and discrete opaque cross patterns. Alternately, a two-dimensional array of contact holes can be printed on a negative photoresist employing a quadrupole illumination lens and a checkerboard pattern of openings. The openings in the quadrupole illumination lens are in diagonal directions.

Abstract translation: 接触孔的二维密集阵列可以使用四极照明透镜和包括不透明线的十字交叉图案的光刻掩模的组合在印刷电路板上印刷。 四极照明透镜中的开口沿着不透明线的垂直方向排列。 分离接触孔可以使用四极照明透镜和包括不透明分解辅助特征和离散不透明交叉图案的十字交叉图案的光刻掩模的组合来印刷在负光致抗蚀剂上。 或者，二维阵列的接触孔可以使用四极照明透镜和棋盘图案的开口印刷在负光致抗蚀剂上。 四极照明透镜中的开口处于对角线方向。