PASSIVE WAVELENGTH DIVISION MULTIPLEXING DEVICE FOR AUTOMATIC WAVELENGTH LOCKING AND SYSTEM THEREOF
    91.
    发明申请
    PASSIVE WAVELENGTH DIVISION MULTIPLEXING DEVICE FOR AUTOMATIC WAVELENGTH LOCKING AND SYSTEM THEREOF 有权
    用于自动波长锁定的被动波段多路复用器件及其系统

    公开(公告)号:US20130315585A1

    公开(公告)日:2013-11-28

    申请号:US13988837

    申请日:2010-11-30

    IPC分类号: H04J14/02

    摘要: The present invention relates to a passive wavelength division multiplexing device for automatic wavelength locking and a system thereof including an optical multiplexer, an optical filter, an integrated optical receiver monitor, and a tunable optical transmitter.Through wavelength locking that adjusts a wavelength of an optical signal, which changes according to an external environment such as a temperature change, into a wavelength of an optical signal having the maximum optical intensity, communication quality may be maximized by securing a stable communication channel, a locking time and a communication channel setting time may be reduced, and more robust locking may be guaranteed.

    摘要翻译: 本发明涉及一种用于自动波长锁定的被动波分复用装置及其系统,包括光复用器,滤光器,集成光接收器监视器和可调光发射器。 通过波长锁定,其将根据诸如温度变化的外部环境变化的光信号的波长调整为具有最大光强度的光信号的波长,通过确保稳定的通信信道可以使通信质量最大化, 可以减少锁定时间和通信信道设置时间,并且可以保证更加鲁棒的锁定。

    TOUCH PANEL
    92.
    发明申请
    TOUCH PANEL 审中-公开
    触控面板

    公开(公告)号:US20130063371A1

    公开(公告)日:2013-03-14

    申请号:US13312545

    申请日:2011-12-06

    IPC分类号: G06F3/041

    CPC分类号: G06F3/044

    摘要: Disclosed herein is a structure of a touch panel capable of solving a depletion problem of resources used for a transparent conductive layer, in particular, improving a moiré phenomenon occurring during a image projection process when a metal electrode in a mesh shape is formed on both surfaces of the transparent substrate, by replacing ITO and forming electrodes using a metal thin film on which fine patterns are formed. Exemplary embodiments of the present invention can improve the moiré phenomenon occurring due to overlapping lines between the top and bottom metal electrodes on the transparent substrate during the image projection process and can improve the visibility by minimizing overlapping lines between the metal electrode formed on the transparent substrate and the pixel grid or the black matrix formed on the color filter.

    摘要翻译: 这里公开了一种能够解决用于透明导电层的资源的耗尽问题的触摸面板的结构,特别是改善当在两个表面上形成网状的金属电极时在图像投影处理期间发生的莫尔现象 通过用形成精细图案的金属薄膜代替ITO和形成电极。 本发明的示例性实施例可以改善在图像投影处理期间由于透明基板上的顶部和底部金属电极之间的重叠线而发生的莫尔现象,并且可以通过最小化形成在透明基板上的金属电极之间的重叠线来提高可视性 以及形成在滤色器上的像素网格或黑矩阵。

    SMOKING METHOD OF DUCK MEAT WITH WINE
    93.
    发明申请
    SMOKING METHOD OF DUCK MEAT WITH WINE 审中-公开
    杜鹃肉与烟酒的吸烟方法

    公开(公告)号:US20130034637A1

    公开(公告)日:2013-02-07

    申请号:US13204628

    申请日:2011-08-05

    申请人: Woo Jin LEE

    发明人: Woo Jin LEE

    IPC分类号: A23L1/318 A23L1/315

    摘要: A smoking method of duck meat with wine includes making salt water by blending water, wine and curing agent in a massage tumbler. A container made up of a double jacket includes a partition inside making it available to hold inside temperature −10° C.-10° C. Wine sauce is placed into the tumbler with mixing ingredients for about 15-30 min at temperature of −2-25° C. Duck meat (the weight range of meat which is without neck, tail, foot, bone and organs is 2.2-3.8 kg) and interfusing salt water containing wine are placed into the meat by 4-15 rpm spinning massage and soakage for 100-210 min. The massage tumbler is cooled down by injecting refrigerant into the jacket. The salted duck meat is roasted at a temperature of 80-250° C. for 70-180 min in a kiln with charcoal or an oak.

    摘要翻译: 鸭肉与葡萄酒的吸烟方法包括通过在按摩锅中混合水,葡萄酒和固化剂来制造盐水。 由双层夹克组成的容器包括一个隔板,使其可以保持在-10°C-10°C的温度范围内。将葡萄酒调味料放入搅拌器中,混合成分约为15-30分钟,温度为-2 -25℃鸭肉(不含脖子,尾巴,脚,骨骼和器官的肉的重量范围为2.2-3.8kg),并将含盐酒的盐混合物通过4-15rpm旋转按摩放入肉中, 浸泡100-210分钟。 通过将制冷剂注入夹套来冷却按摩滚筒。 将咸鸭肉在80-250℃的温度下在具有木炭或橡木的窑中焙烧70-180分钟。

    Method of depositing dielectric film having Si-N bonds by modified peald method

    公开(公告)号:US08129291B2

    公开(公告)日:2012-03-06

    申请号:US12901323

    申请日:2010-10-08

    IPC分类号: H01L21/31 H01L21/469

    摘要: A method of forming dielectric film having Si—N bonds on a semiconductor substrate by plasma enhanced atomic layer deposition (PEALD), includes: introducing a nitrogen- and hydrogen-containing reactive gas and a rare gas into a reaction space inside which the semiconductor substrate is placed; introducing a hydrogen-containing silicon precursor in pulses of less than 1.0-second duration into the reaction space wherein the reactive gas and the rare gas are introduced; exiting a plasma in pulses of less than 1.0-second duration immediately after the silicon precursor is shut off; and maintaining the reactive gas and the rare gas as a purge of less than 2.0-second duration.

    METHOD OF TAILORING CONFORMALITY OF Si-CONTAINING FILM
    95.
    发明申请
    METHOD OF TAILORING CONFORMALITY OF Si-CONTAINING FILM 有权
    定制含Si膜的一致性的方法

    公开(公告)号:US20120028469A1

    公开(公告)日:2012-02-02

    申请号:US12847848

    申请日:2010-07-30

    IPC分类号: H01L21/311

    摘要: A method of tailoring conformality of a film deposited on a patterned surface includes: (I) depositing a film by PEALD or pulsed PECVD on the patterned surface; (II) etching the film, wherein the etching is conducted in a pulse or pulses, wherein a ratio of an etching rate of the film on a top surface and that of the film on side walls of the patterns is controlled as a function of the etching pulse duration and the number of etching pulses to increase a conformality of the film; and (III) repeating (I) and (II) to satisfy a target film thickness.

    摘要翻译: 定制沉积在图案化表面上的膜的共形性的方法包括:(I)通过PEALD或脉冲PECVD在图案化表面上沉积膜; (II)蚀刻所述膜,其中所述蚀刻以脉冲或脉冲进行,其中所述图案的所述膜上的所述膜的蚀刻速率与所述图案的侧壁上的膜的蚀刻速率的比率被控制为 蚀刻脉冲持续时间和蚀刻脉冲数以增加膜的共形度; 和(III)重复(I)和(II)以满足目标膜厚度。

    LOW TEMPERATURE PROCESS FOR PRODUCING NANO-SIZED TITANIUM DIOXIDE PARTICLES
    96.
    发明申请
    LOW TEMPERATURE PROCESS FOR PRODUCING NANO-SIZED TITANIUM DIOXIDE PARTICLES 有权
    生产纳米尺寸二氧化钛颗粒的低温工艺

    公开(公告)号:US20100226851A1

    公开(公告)日:2010-09-09

    申请号:US12310615

    申请日:2007-09-11

    IPC分类号: C01G23/047

    摘要: A process for synthesizing nano-sized rutile, anatase, or a mixture of rutile and anatase TiO2 powder. The process includes the steps of: 1) forming a Ti-peroxo complex by mixing H2O2 with a Ti compound, and 2) heating the Ti-peroxo complex at a temperature of above 50° C. A primary particle size of TiO2 particles, synthesized by the method, is below 50 nm, and an agglomerated particle size thereof after a washing/dry process is below about 10 μm. The major characteristics of the present invention are that it is a low temperature process, a highly concentrated synthesis, and high production yield of above 90%.

    摘要翻译: 合成纳米尺寸金红石,锐钛矿或金红石和锐钛矿TiO 2粉末的混合物的方法。 该方法包括以下步骤:1)通过将H 2 O 2与Ti化合物混合形成Ti-过氧配合物,和2)在高于50℃的温度下加热Ti-过氧配合物。合成的TiO 2颗粒的一次粒径 通过该方法低于50nm,洗涤/干燥处理后的附聚粒径低于约10μm。 本发明的主要特征是低温工艺,高浓缩合成,高产率高于90%。

    METHOD OF FORMING CONFORMAL DIELECTRIC FILM HAVING Si-N BONDS BY PECVD
    97.
    发明申请
    METHOD OF FORMING CONFORMAL DIELECTRIC FILM HAVING Si-N BONDS BY PECVD 有权
    通过PECVD形成具有Si-N键的合适电介质膜的方法

    公开(公告)号:US20100221925A1

    公开(公告)日:2010-09-02

    申请号:US12778808

    申请日:2010-05-12

    IPC分类号: H01L21/318

    摘要: A method of forming a conformal dielectric film having Si—N bonds on a semiconductor substrate by plasma enhanced chemical vapor deposition (PECVD) includes: introducing a nitrogen- and hydrogen-containing reactive gas and a rare gas into a reaction space inside which a semiconductor substrate is placed; applying RF power to the reaction space; and introducing a hydrogen-containing silicon precursor as a first precursor and a hydrocarbon gas as a second precursor in pulses into the reaction space wherein a plasma is excited, thereby forming a conformal dielectric film doped with carbon and having Si—N bonds on the substrate.

    摘要翻译: 通过等离子体增强化学气相沉积(PECVD)在半导体衬底上形成具有Si-N键的保形电介质膜的方法包括:将含氮和氢的反应气体和稀有气体引入反应空间内, 底物放置; 向反应空间施加RF功率; 并将作为第一前体的含氢硅前体和作为第二前体的烃气体以脉冲方式引入反应空间中,其中等离子体被激发,由此形成掺杂有碳并在衬底上具有Si-N键的保形电介质膜 。

    Method of Forming Conformal Dielectric Film Having Si-N Bonds by PECVD
    98.
    发明申请
    Method of Forming Conformal Dielectric Film Having Si-N Bonds by PECVD 有权
    通过PECVD形成具有Si-N键的保形介质膜的方法

    公开(公告)号:US20100184302A1

    公开(公告)日:2010-07-22

    申请号:US12357174

    申请日:2009-01-21

    IPC分类号: H01L21/469

    摘要: A method of forming a conformal dielectric film having Si—N bonds on a semiconductor substrate by plasma enhanced chemical vapor deposition (PECVD) includes: introducing a nitrogen- and hydrogen-containing reactive gas and an additive gas into a reaction space inside which a semiconductor substrate is placed; applying RF power to the reaction space; and introducing a hydrogen-containing silicon precursor in pulses into the reaction space wherein a plasma is excited, thereby forming a conformal dielectric film having Si—N bonds on the substrate.

    摘要翻译: 通过等离子体增强化学气相沉积(PECVD)在半导体衬底上形成具有Si-N键的共形电介质膜的方法包括:将含氮和氢的反应气体和添加气体引入反应空间内, 底物放置; 向反应空间施加RF功率; 并将含氢的硅前体以脉冲方式引入到等离子体被激发的反应空间中,从而在衬底上形成具有Si-N键的保形电介质膜。