Abstract:
The present invention is a method of producing an ultraviolet light emitting phosphor material. This method includes a step of heat-treating a composition containing zinc and oxygen as main components and at least one selected from the group consisting of aluminum, gallium and indium as a sub-component, in the presence of at least two coexisting substances selected from the group consisting of zinc oxide, gallium oxide and phosphorus oxide under a non-oxidizing atmosphere.
Abstract:
The embodiment of the present invention is a preliminary construction method of an in-plant trench of a nuclear power plant, the method. The method includes: constructing a plurality of buildings for generating an atomic energy; constructing a trench between the buildings via a platform configured to adjust a level of the trench with an installation level of the trench; and backfilling an area between a ground and the trench, after the construction of the trench.
Abstract:
An object of the present invention is to provide an image processing apparatus that quickly and precisely measures or evaluates a distortion in a field of view and a charged particle beam apparatus. To attain the object, an image processing apparatus or the like is proposed which acquires a first image of a first area of an imaging target and a second image of a second area that is located at a different position than the first area and partially overlaps with the first area and determines the distance between a measurement point in the second image and a second part of the second image that corresponds to a particular area for a plurality of sites in the overlapping area of the first image and the second image.
Abstract:
A semiconductor package includes a semiconductor chip, a first insulating layer formed to cover the semiconductor chip, a wiring structure formed on the first insulating layer. The wiring structure has an alternately layered configuration including wiring layers electrically connected to the semiconductor chip and interlayer insulating layers each located between one of the wiring layers and another. The interlayer insulating layers include an outermost interlayer insulating layer located farthest from a surface of the first insulating layer. A groove formed in the outermost interlayer insulating layer passes through the outermost interlayer insulating layer in a thickness direction.
Abstract:
The present invention aims to provide a plasma display panel that can be driven at low voltage and can offer favorable image display performance. In order to achieve the aim, on a surface of the front panel 1 on which the display electrode 5 is formed, the protective layer 7 made by using a crystalline oxide material that contains a crystalline oxide selected from the group consisting of (i) at least one of SrCeO3 and BaCeO3 and (ii) a solid solution of SrCeO3 and BaCeO3 is disposed so as to face the discharge space 14. By using the crystalline oxide material that contains the crystalline oxide selected from the group consisting of (i) at least one of SrCeO3 and BaCeO3 and (ii) a solid solution of SrCeO3 and BaCeO3, chemical stability can be improved without reducing secondary electron emission efficiency. A PDP capable of lowering drive voltage compared with a case where MgO is used can be obtained by using the crystalline oxide material.
Abstract:
A plasma display panel of the present invention includes display electrodes and address electrodes that cross each other. The electrode to be covered with the first dielectric layer contains at least one selected from silver and copper. The first glass contains Bi2O3. The first glass further contains 0 to 4 wt % of MoO3 and 0 to 4 wt % of WO3, and the total of the contents of MoO3 and WO3 that are contained in the first glass is in a range of 0.1 to 8 wt %. The first glass may contain, as components thereof: 0 to 15 wt % SiO2; 10 to 50 wt % B2O3; 15 to 50 wt % ZnO; 0 to 10 wt % Al2O3; 2 to 40 wt % Bi2O3; 0 to 5 wt % MgO; 5 to 38 wt % CaO+SrO+BaO; 0 to 4 wt % MoO3; and 0 to 4 wt % WO3, and the total of the contents of MoO3 and WO3 that are contained in the first glass is in the range of 0.1 to 8 wt %.
Abstract:
A glass composition of the present invention is an oxide glass, in which the percentages of elements except for oxygen (O) contained therein are as follows, in terms of atom %: the amount of boron (B) exceeds 72% but does not exceed 86%, the total amount of lithium (Li), sodium (Na), and potassium (K) is 8% to 20%, the total amount of magnesium (Mg), calcium (Ca), strontium (Sr), and barium (Ba) is 1% to 8%, the amount of silicon (Si) is from 0% to less than 15%, and the amount of zinc (Zn) is from 0% to less than 2%. This glass composition further may contain molybdenum (Mo) and/or tungsten (W) in the range of more than 0% but not more than 3%.
Abstract:
A plasma display panel of the present invention includes a display electrode (5) and an address electrode (10) that cross each other. At least one selected from the display electrode (5) and the address electrode (10) is covered with a first dielectric layer (6) containing first glass. The first glass contains Bi2O3, and the electrode that is covered with the first dielectric layer (6) contains at least one selected from the group consisting of silver and copper. The first glass further contains 0 to 4 wt % of MoO3 and 0 to 4 wt % of WO3, and the total of the contents of MoO3 and WO3 in the first glass is in a range of 0.1 to 8 wt %.
Abstract:
A glass composition for covering electrodes of the present invention contains: 0 to 15 wt % SiO2; 10 to 50 wt % B2O3; 15 to 50 wt % ZnO; 0 to 10 wt % Al2O3; 2 to 40 wt % Bi2O3; 0 to 5 wt % MgO; 5 to 38 wt % CaO+SrO+BaO; 0 to 0.1 wt % Li2O+Na2O+K2O; 0 to 4 wt % MoO3; and 0 to 4 wt % WO3, and the total of the contents of MoO3 and WO3 is in the range of 0.1 to 8 wt %. The glass composition for covering electrodes of the present invention may contain: 0 to 2 wt % SiO2; 10 to 50 wt % B2O3; 15 to 50 wt % ZnO; 0 to 10 wt % Al2O3; 2 to 40 wt % Bi2O3; 0 to 5 wt % MgO; 5 to 38 wt % CaO+SrO+BaO; 0 to 4 wt % MoO3; and 0 to 4 wt % WO3, and the total of the contents of MoO3 and WO3 may be in the range of 0.1 to 8 wt %.
Abstract translation:本发明的覆盖电极用玻璃组合物含有:0〜15重量%的SiO 2; 10至50重量%B 2 O 3 3; 15〜50wt%的ZnO; 0至10重量%的Al 2 O 3 3; 2至40重量%的Bi 2 O 3 3; 0〜5重量%的MgO; 5〜38重量%CaO + SrO + BaO; 0〜0.1重量%Li 2 O + Na 2 O + K 2 O; 0至4wt%MoO 3 3; 和0至4重量%的WO 3,MoO 3 3和WO 3 3的含量的总和在0.1至8的范围内 重量%。 本发明的覆盖电极用玻璃组合物可以含有0〜2重量%的SiO 2, 10至50重量%B 2 O 3 3; 15〜50wt%的ZnO; 0至10重量%的Al 2 O 3 3; 2至40重量%的Bi 2 O 3 3; 0〜5重量%的MgO; 5〜38重量%CaO + SrO + BaO; 0至4wt%MoO 3 3; 和0〜4重量%的WO 3,MoO 3 3和WO 3的含量的总和可以在0.1〜 8重量%。
Abstract:
A plasma display panel of the present invention includes display electrodes and address electrodes that cross each other. The electrode to be covered with the first dielectric layer contains at least one selected from silver and copper. The first glass contains Bi2O3. The first glass further contains 0 to 4 wt % of MoO3 and 0 to 4 wt % of WO3, and the total of the contents of MoO3 and WO3 that are contained in the first glass is in a range of 0.1 to 8 wt %. The first glass may contain, as components thereof: 0 to 15 wt % SiO2; 10 to 50 wt % B2O3; 15 to 50 wt % ZnO; 0 to 10 wt % Al2O3; 2 to 40 wt % Bi2O3; 0 to 5 wt % MgO; 5 to 38 wt % CaO+SrO+BaO; 0 to 4 wt % MoO3; and 0 to 4 wt % WO3, and the total of the contents of MoO3 and WO3 that are contained in the first glass is in the range of 0.1 to 8 wt %.