公开(公告)号：US20240274435A1

公开(公告)日：2024-08-15

申请号：US18626472

申请日：2024-04-04

Applicant: Albert-Ludwigs-Universität Freiburg ,  Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.

Inventor： Stefano LEONE ,  Christian MANZ ,  Hanspeter MENNER ,  Joachim WIEGERT ,  Jana LIGL

IPC: H01L21/02 ,  C23C16/30 ,  C23C16/448 ,  H01L29/20 ,  H01L29/205

CPC classification number: H01L21/0254 ,  C23C16/303 ,  C23C16/4482 ,  H01L21/0262 ,  H01L29/2003 ,  H01L29/205

Abstract: A semiconductor layer and a method and an apparatus for its manufacturing are disclosed. The semiconductor layer includes at least one compound of the formula M1aM21-aN, where M1 is selected from group 13 of the periodic table and M2 is selected from the group including scandium, yttrium, erbium, and europium and where the parameter a is selected between 0.01 and 0.99. The method includes supplying a first precursor into a reaction chamber, the first precursor including at least M2 and being supplied to the reaction chamber at a molar flow rate of at least 1·10−6 mol/min by providing the first precursor by means of a first bubbler from which it is evaporated and supplied to the reaction chamber, the temperature of the first bubbler being more than 90° C.

公开(公告)号：US20240071750A1

公开(公告)日：2024-02-29

申请号：US18387673

申请日：2023-11-07

Applicant: KOKUSAI ELECTRIC CORPORATION

Inventor： Hiroshi ASHIHARA ,  Toshiyuki KIKUCHI

IPC: H01L21/02 ,  C23C16/40 ,  C23C16/448 ,  C23C16/46 ,  C23C16/50 ,  H01L21/67

CPC classification number: H01L21/0228 ,  C23C16/401 ,  C23C16/4482 ,  C23C16/46 ,  C23C16/50 ,  H01L21/02164 ,  H01L21/67017

Abstract: A method of processing a substrate includes: (a) providing a substrate; (b) supplying a processing gas comprising H2O-containing radicals to the substrate; (c) supplying a gas including at least one element of Si, Ti, Mo, Al, W, Hf or Zr and a halogen element to the substrate; (d) supplying a gas including one or both of an oxygen element and a nitrogen element to the substrate after (c); and (e) repeating (c) and (d).

公开(公告)号：US20230243030A1

公开(公告)日：2023-08-03

申请号：US18012412

申请日：2021-06-28

Applicant: Agency for Science, Technology and Research

Inventor： Henry Medina Silva ,  Dongzhi Chi ,  Shi Wun Tong ,  Jianwei Chai ,  Shijie Wang

IPC: C23C16/02 ,  C23C14/18 ,  C23C14/08 ,  C23C16/448 ,  C23C16/30 ,  C23C16/455 ,  C23C16/46 ,  C23C14/58 ,  C23C28/00 ,  H01L21/02

CPC classification number: C23C16/0281 ,  C23C14/083 ,  C23C14/185 ,  C23C14/5866 ,  C23C16/46 ,  C23C16/305 ,  C23C16/4482 ,  C23C16/45523 ,  C23C28/322 ,  C23C28/3455 ,  H01L21/0242 ,  H01L21/02568 ,  H01L21/02614

Abstract: A method for forming a transition metal dichalcogenide monolayer, which includes depositing a transition metal, a transition metal oxide, or a mixture thereof, on a substrate, introducing a chalcogen precursor to the transition metal, the transition metal oxide, or the mixture thereof, in the presence of an etching gas and a carrier gas at a first temperature, to form a transition metal dichalcogenide on the substrate from the transition metal, the transition metal oxide, or the mixture thereof, and subliming the transition metal dichalcogenide on the substrate in the presence of a pulsating supply of a vapor of the chalcogen precursor to form the transition metal dichalcogenide monolayer at a second temperature, wherein the vapor of the chalcogen precursor comprises a chalcogen vapor.

公开(公告)号：US20180334744A1

公开(公告)日：2018-11-22

申请号：US16049199

申请日：2018-07-30

Applicant: Ceres Technologies, Inc.

Inventor： Egbert WOELK ,  Ronald L. DICARLO

IPC: C23C16/455 ,  C23C16/448 ,  C23C14/24 ,  C23C14/54 ,  C30B25/14 ,  C30B23/00 ,  C23C14/06 ,  C23C16/30

CPC classification number: C23C16/455 ,  C23C14/0617 ,  C23C14/0629 ,  C23C14/243 ,  C23C14/54 ,  C23C16/301 ,  C23C16/306 ,  C23C16/4482 ,  C30B23/00 ,  C30B25/14

Abstract: Disclosed is a method of providing a constant concentration of a metal-containing precursor compound in the vapor phase in a carrier gas. Such method is particularly useful in supplying a constant concentration of a gaseous metal-containing compound to a plurality of vapor deposition reactors.

公开(公告)号：US20170306485A1

公开(公告)日：2017-10-26

申请号：US15138473

申请日：2016-04-26

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chung-Chieh Lee ,  Chi-Ming Yang ,  Lin-Jung Wu

IPC: C23C16/448 ,  C23C16/44 ,  C23C16/40

CPC classification number: C23C16/4482 ,  C23C16/405 ,  C23C16/4402

Abstract: A method of solid precursor delivery for a vapor deposition process is provided. In some embodiments, a precursor ampoule is provided including a solid precursor arranged in the precursor ampoule. A solvent is added to the precursor ampoule including one or more ionic liquids to dissolve chemical species of the solid precursor and to form a liquid precursor. A carrier gas is applied into the liquid precursor through an inlet of the precursor ampoule. A gas precursor is generated at an upper region of the precursor ampoule by vaporization of the liquid precursor. The chemical species of the solid precursor are delivered into a vapor deposition chamber by the carrier gas. The chemical species of the solid precursor is deposited onto a substrate within the vapor deposition chamber.

公开(公告)号：US09711347B2

公开(公告)日：2017-07-18

申请号：US15177446

申请日：2016-06-09

Applicant: American Air Liquide, Inc.

Inventor： Venkateswara R. Pallem ,  Christian Dussarrat ,  Wontae Noh

IPC: H01L21/31 ,  H01L21/02 ,  C07C257/12 ,  C07C257/14 ,  C07F17/00 ,  C23C16/18 ,  C23C16/40 ,  C23C16/455 ,  C07F5/00 ,  C23C16/448 ,  H01L49/02 ,  H01L29/51

CPC classification number: H01L21/02192 ,  C07C257/12 ,  C07C257/14 ,  C07F5/00 ,  C07F17/00 ,  C23C16/18 ,  C23C16/40 ,  C23C16/409 ,  C23C16/4482 ,  C23C16/45527 ,  C23C16/45531 ,  C23C16/45553 ,  H01L21/02205 ,  H01L21/02271 ,  H01L21/0228 ,  H01L28/40 ,  H01L29/517

Abstract: Methods and compositions for depositing rare earth metal-containing layers are described herein. In general, the disclosed methods deposit the precursor compounds comprising rare earth-containing compounds using deposition methods such as chemical vapor deposition or atomic layer deposition. The disclosed precursor compounds include a cyclopentadienyl ligand having at least one aliphatic group as a substituent and an amidine ligand.

公开(公告)号：US20160293409A1

公开(公告)日：2016-10-06

申请号：US15177446

申请日：2016-06-09

Applicant: American Air Liquide, Inc.

Inventor： Venkateswara R. PALLEM ,  Christian Dussarrat ,  Wontae Noh

IPC: H01L21/02 ,  C23C16/40 ,  C23C16/455 ,  C07F5/00

CPC classification number: H01L21/02192 ,  C07C257/12 ,  C07C257/14 ,  C07F5/00 ,  C07F17/00 ,  C23C16/18 ,  C23C16/40 ,  C23C16/409 ,  C23C16/4482 ,  C23C16/45527 ,  C23C16/45531 ,  C23C16/45553 ,  H01L21/02205 ,  H01L21/02271 ,  H01L21/0228 ,  H01L28/40 ,  H01L29/517

Abstract: Methods and compositions for depositing rare earth metal-containing layers are described herein. In general, the disclosed methods deposit the precursor compounds comprising rare earth-containing compounds using deposition methods such as chemical vapor deposition or atomic layer deposition. The disclosed precursor compounds include a cyclopentadienyl ligand having at least one aliphatic group as a substituent and an amidine ligand.

公开(公告)号：US09384963B2

公开(公告)日：2016-07-05

申请号：US14332720

申请日：2014-07-16

Applicant: American Air Liquide, Inc.

Inventor： Venkateswara R. Pallem ,  Christian Dussarrat ,  Wontae Noh

IPC: H01L35/24 ,  H01L21/02 ,  C07C257/12 ,  C07C257/14 ,  C07F17/00 ,  C23C16/18 ,  C23C16/40 ,  C23C16/455 ,  C07F5/00

CPC classification number: H01L21/02192 ,  C07C257/12 ,  C07C257/14 ,  C07F5/00 ,  C07F17/00 ,  C23C16/18 ,  C23C16/40 ,  C23C16/409 ,  C23C16/4482 ,  C23C16/45527 ,  C23C16/45531 ,  C23C16/45553 ,  H01L21/02205 ,  H01L21/02271 ,  H01L21/0228 ,  H01L28/40 ,  H01L29/517

Abstract: Methods and compositions for depositing rare earth metal-containing layers are described herein. In general, the disclosed methods deposit the precursor compounds comprising rare earth-containing compounds using deposition methods such as chemical vapor deposition or atomic layer deposition. The disclosed precursor compounds include a cyclopentadienyl ligand having at least one aliphatic group as a substituent and an amidine ligand.

Abstract translation: 本文描述了用于沉积含稀土金属的层的方法和组合物。 通常，所公开的方法使用诸如化学气相沉积或原子层沉积的沉积方法沉积包含稀土含量化合物的前体化合物。 所公开的前体化合物包括具有至少一个脂族基团作为取代基的环戊二烯基配体和脒配体。

公开(公告)号：US09347696B2

公开(公告)日：2016-05-24

申请号：US13902304

申请日：2013-05-24

Applicant: APPLIED MATERIALS, INC.

Inventor： David K. Carlson ,  Errol Antonio C. Sanchez ,  Kenric Choi ,  Marcel E. Josephson ,  Dennis Demars

IPC: F25B21/02 ,  C23C16/448

CPC classification number: F25B21/02 ,  C23C16/448 ,  C23C16/4482

Abstract: Apparatus for thermal management of a precursor for use in substrate processing are provided herein. In some embodiments, an apparatus for thermal management of a precursor for use in substrate processing may include a body having an opening sized to receive a storage container having a liquid or solid precursor disposed therein, the body fabricated from thermally conductive material; one or more thermoelectric devices coupled to the body proximate the opening; and a heat sink coupled to the one or more thermoelectric devices.

Abstract translation: 本文提供了用于基板处理中使用的前体的热管理装置。 在一些实施例中，用于对基板处理中使用的前体进行热管理的设备可以包括具有开口尺寸的开口的主体，该开口的尺寸适于容纳设置在其中的液体或固体前体的存储容器，所述主体由导热材料制成; 一个或多个耦合到靠近开口的本体的热电装置; 以及耦合到所述一个或多个热电装置的散热器。

公开(公告)号：US09194041B2

公开(公告)日：2015-11-24

申请号：US14355893

申请日：2012-11-01

Applicant: UBE INDUSTRIES, LTD.

Inventor： Masashi Shirai ,  Chihiro Hasegawa ,  Hiroshi Nihei

IPC: C07F5/06 ,  C23C16/20 ,  C23C16/40 ,  C23C16/448

CPC classification number: C23C16/20 ,  C07F5/069 ,  C23C16/403 ,  C23C16/4482

Abstract: The present invention relates to a tris(dialkylamide)aluminum compound, and a method for producing an aluminum-containing thin film using the aluminum compound, the tris(dialkylamide)aluminum compound being represented by the formula (1): wherein R represents a linear alkyl group having 1 to 6 carbon atoms; and R1, R2 and R3 may be the same as, or different from each other, and each independently represents hydrogen atom, or a linear or branched alkyl group having 1 to 6 carbon atoms, or R1, R2 and R3 may be joined together to form a ring, with the proviso that the compounds in which two or more of R1, R2 and R3 are hydrogen atoms are excluded, and three dialkylamide ligands may be the same as, or different from each other.

Abstract translation: 本发明涉及三（二烷基酰胺）铝化合物，以及使用铝化合物制备含铝薄膜的方法，由式（1）表示的三（二烷基酰胺）铝化合物：其中R表示直链 具有1至6个碳原子的烷基; 并且R 1，R 2和R 3可以彼此相同或不同，并且各自独立地表示氢原子，或具有1至6个碳原子的直链或支链烷基，或者R 1，R 2和R 3可以连接在一起至 形成环，条件是其中R1，R2和R3中的两个或更多个是氢原子的化合物被排除，并且三个二烷基酰胺配体可以彼此相同或不同。