公开(公告)号：US20170291915A1

公开(公告)日：2017-10-12

申请号：US15512968

申请日：2015-09-23

Applicant: Claudia FAFARD ,  Venkateswara R. PALLEM ,  Jean-Marc GIRARD ,  American Air Liquide, Inc.

Inventor： Claudia FAFARD ,  Venkateswara R. PALLEM ,  Jean-Marc GIRARD

IPC: C07F7/10 ,  H01L21/02 ,  C23C16/455 ,  C07F7/08 ,  C23C16/24

CPC classification number: C07F7/10 ,  C07F7/02 ,  C07F7/08 ,  C23C16/24 ,  C23C16/30 ,  C23C16/325 ,  C23C16/345 ,  C23C16/36 ,  C23C16/401 ,  C23C16/402 ,  C23C16/45553 ,  H01L21/02123 ,  H01L21/0228 ,  H01L21/02532

Abstract: Disclosed are Si-containing film forming compositions comprising carbosilane substituted amine precursors. The carbosilane substituted amine precursors have the formula (R1)aN(—SiHR2—CH2—SiH2R3)3-a, wherein a=0 or 1; R1 is H, a C1 to C6 alkyl group, or a halogen; R2 and R3 is each independently H; a halogen; an alkoxy group having the formula OR′, wherein R′ is an alkyl group (C1 to C6); or an alkylamino group having the formula NR″2, wherein each R″ is independently H, a C1-C6 alkyl group, a C1-C6 alkenyl group, or a C3-C10 aryl or heterocycle group. Also disclosed are methods of synthesizing the carbosilane substituted amine precursors and their use for deposition processes.

公开(公告)号：US20190256532A1

公开(公告)日：2019-08-22

申请号：US16398679

申请日：2019-04-30

Applicant: American Air Liquide, Inc. ,  L'Air Liquide, Société Anonyme pour I'Exploitation des Procédés GeorgesClaude

Inventor： Claudia FAFARD ,  Glenn KUCHENBEISER ,  Venkateswara R. PALLEM ,  Jean-Marc GIRARD

IPC: C07F7/10 ,  C23C16/455 ,  C09D1/00 ,  C23C16/24

Abstract: Disclosed are Si-containing film forming compositions comprising alkylamino-substituted carbosilane precursors, methods of synthesizing the same, and their use for vapor deposition processes.

公开(公告)号：US20160293409A1

公开(公告)日：2016-10-06

申请号：US15177446

申请日：2016-06-09

Applicant: American Air Liquide, Inc.

Inventor： Venkateswara R. PALLEM ,  Christian Dussarrat ,  Wontae Noh

IPC: H01L21/02 ,  C23C16/40 ,  C23C16/455 ,  C07F5/00

CPC classification number: H01L21/02192 ,  C07C257/12 ,  C07C257/14 ,  C07F5/00 ,  C07F17/00 ,  C23C16/18 ,  C23C16/40 ,  C23C16/409 ,  C23C16/4482 ,  C23C16/45527 ,  C23C16/45531 ,  C23C16/45553 ,  H01L21/02205 ,  H01L21/02271 ,  H01L21/0228 ,  H01L28/40 ,  H01L29/517

Abstract: Methods and compositions for depositing rare earth metal-containing layers are described herein. In general, the disclosed methods deposit the precursor compounds comprising rare earth-containing compounds using deposition methods such as chemical vapor deposition or atomic layer deposition. The disclosed precursor compounds include a cyclopentadienyl ligand having at least one aliphatic group as a substituent and an amidine ligand.

公开(公告)号：US20150270140A1

公开(公告)日：2015-09-24

申请号：US14730917

申请日：2015-06-04

Applicant: American Air Liquide, Inc.

Inventor： Rahul GUPTA ,  Venkateswara R. PALLEM ,  Benjamin J. JURCIK, JR.

IPC: H01L21/311 ,  H01L21/3065 ,  H01L21/3213

CPC classification number: H01L21/32136 ,  C23F4/00 ,  H01J37/32 ,  H01J2237/334 ,  H01L43/12

Abstract: Atomic layer or cyclic plasma etching chemistries and processes to etch films are disclosed. Films include Si, Ti, Ta, W, Al, Pd, Ir, Co, Fe, B, Cu, Ni, Pt, Ru, Mn, Mg, Cr, Au, alloys thereof, oxides thereof, nitrides thereof, and combinations thereof.

Abstract translation: 公开了原子层或循环等离子体蚀刻化学和蚀刻薄膜的方法。 膜包括Si，Ti，Ta，W，Al，Pd，Ir，Co，Fe，B，Cu，Ni，Pt，Ru，Mn，Mg，Cr，Au，其合金，其氧化物，氮化物及其组合 。

公开(公告)号：US20140335702A1

公开(公告)日：2014-11-13

申请号：US14332720

申请日：2014-07-16

Applicant: American Air Liquide, Inc.

Inventor： Venkateswara R. PALLEM ,  Christian Dussarrat ,  Wontae Noh

IPC: H01L21/02

CPC classification number: H01L21/02192 ,  C07C257/12 ,  C07C257/14 ,  C07F5/00 ,  C07F17/00 ,  C23C16/18 ,  C23C16/40 ,  C23C16/409 ,  C23C16/4482 ,  C23C16/45527 ,  C23C16/45531 ,  C23C16/45553 ,  H01L21/02205 ,  H01L21/02271 ,  H01L21/0228 ,  H01L28/40 ,  H01L29/517

Abstract: Methods and compositions for depositing rare earth metal-containing layers are described herein. In general, the disclosed methods deposit the precursor compounds comprising rare earth-containing compounds using deposition methods such as chemical vapor deposition or atomic layer deposition. The disclosed precursor compounds include a cyclopentadienyl ligand having at least one aliphatic group as a substituent and an amidine ligand.

Abstract translation: 本文描述了用于沉积含稀土金属的层的方法和组合物。 通常，所公开的方法使用诸如化学气相沉积或原子层沉积的沉积方法沉积包含稀土含量化合物的前体化合物。 所公开的前体化合物包括具有至少一个脂族基团作为取代基的环戊二烯基配体和脒配体。

公开(公告)号：US20230253200A1

公开(公告)日：2023-08-10

申请号：US17666686

申请日：2022-02-08

Applicant: L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude ,  American Air Liquide, Inc.

Inventor： Daehyeon KIM ,  Junhyun SONG ,  Wontae NOH ,  Venkateswara R. PALLEM

IPC: H01L21/02 ,  C07F5/00 ,  C23C16/40

CPC classification number: H01L21/02192 ,  C07F5/00 ,  H01L21/0228 ,  C23C16/409 ,  H01L21/02205

Abstract: The disclosed lanthanide precursor compounds include a cyclopentadienyl ligand having at least one aliphatic group as a substituent and at least one bidentate ligand. These precursors are suitable for depositing lanthanide containing films.

公开(公告)号：US20230095074A1

公开(公告)日：2023-03-30

申请号：US17977619

申请日：2022-10-31

Applicant: L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude ,  American Air Liquide, Inc.

Inventor： Yumin LIU ,  Jean-Marc GIRARD ,  Peng ZHANG ,  Fan QIN ,  Gennadiy ITOV ,  Fabrizio MARCHEGIANI ,  Thomas J. LARRABEE ,  Venkateswara R. PALLEM

IPC: C09D183/14

Abstract: A method of forming a gap filling on a substrate, the substrate having gaps formed therein, comprises: producing a gap filling polycarbosilazane polymer or oligomer by a polymerization of a reaction mixture of carbosilanes with amines; forming a solution containing the gap filling polycarbosilazane polymer or oligomer; and contacting the solution with the substrate via a spin-on coating, spray coating, dip coating, or slit coating technique to fill the gaps in the substrate forming the silicon and carbon containing gap filling, wherein a concentration of the gap filling polycarbosilazane polymer or oligomer in the solution ranges from 1 to 60 wt %.

公开(公告)号：US20170298510A1

公开(公告)日：2017-10-19

申请号：US15515666

申请日：2015-10-02

Applicant: American Air Liquide, Inc.

Inventor： Guillaume HUSSON ,  Glenn KUCHENBEISER ,  Venkateswara R. PALLEM

IPC: C23C16/455 ,  C23C16/34 ,  C23C16/40 ,  C23C16/448

CPC classification number: C23C16/45553 ,  C23C16/325 ,  C23C16/347 ,  C23C16/401 ,  C23C16/402 ,  C23C16/4482

Abstract: Disclosed are Si-containing film forming composition comprising organodisilane precursors. The organodisilane precursors have the formula (E-(CR)n-E)SiH2—SiHx(E-(CR)n-E)3-x, wherein x is 2 or 3; each n is independently 1 or 3; each (E-(CR)n-E) group is a monoanionic bidentate ligand bonding to the Si through each E; each E is independently chosen from NR, O or S; and each R is independently selected from the group consisting of H, a C1 to C6 alkyl group, and a C3-C20 aryl or heterocycle group. Also disclosed are methods of synthesizing the Si-containing film forming compositions and methods of using the same to deposit silicon-containing films using vapor deposition processes for manufacturing semiconductors, photovoltaics, LCD-TFT, flat panel-type devices, refractory materials, or aeronautics.

公开(公告)号：US20160108064A1

公开(公告)日：2016-04-21

申请号：US14984908

申请日：2015-12-30

Applicant: American Air Liquide, Inc. ,  L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude

Inventor： Glenn KUCHENBEISER ,  Venkateswara R. PALLEM ,  Nicolas BLASCO ,  Jean-Marc GIRARD

IPC: C07F7/02

CPC classification number: C23C16/45553 ,  C23C16/18

Abstract: Disclosed are Si-containing film forming compositions, methods of synthesizing the same, and methods of using the same to deposit silicon-containing films using vapor deposition processes. The disclosed Si-containing film forming composition comprising an amino(bromo)silane precursor having the formula: SiHxBry(NR1R2)4-x-y wherein x=0, 1 or 2; y=1, 2 or 3; x+y

Abstract translation: 公开了含Si的成膜组合物及其合成方法，以及使用该方法使用气相沉积工艺沉积含硅膜的方法。 所公开的含Si成膜组合物包含具有下列通式的氨基（溴）硅烷前体：SiHxBry（NR1R2）4-x-y，其中x = 0,1或2; y = 1,2或3; x + y <4; 每个R 1和R 2独立地选自C 1 -C 6烷基，芳基或杂基; 并且R 1和R 2可以连接形成环状含氮杂环。 所公开的含Si成膜组合物包括选自SiH 2 Br（NEt 2），SiH 2 Br（N（iPr）2），SiH 2 Br（N（iBu）2）和SiBr（NMe 2）3 。

公开(公告)号：US20130303739A1

公开(公告)日：2013-11-14

申请号：US13940654

申请日：2013-07-12

Applicant: American Air Liquide, Inc.

Inventor： Venkateswara R. PALLEM ,  Christian DUSSARRAT

IPC: H01L21/02

CPC classification number: H01L21/02192 ,  C07C257/14 ,  C07F17/00 ,  C23C16/18 ,  C23C16/409 ,  C23C16/45531

Abstract: Methods and compositions for depositing rare earth metal-containing layers are described herein. In general, the disclosed methods deposit the precursor compounds comprising rare earth-containing compounds using deposition methods such as chemical vapor deposition or atomic layer deposition. The disclosed precursor compounds include a cyclopentadienyl ligand having at least one aliphatic group as a substituent and an amidine ligand.

Abstract translation: 本文描述了用于沉积含稀土金属的层的方法和组合物。 通常，所公开的方法使用诸如化学气相沉积或原子层沉积的沉积方法沉积包含稀土含量化合物的前体化合物。 所公开的前体化合物包括具有至少一个脂族基团作为取代基的环戊二烯基配体和脒配体。