公开(公告)号：US09802821B2

公开(公告)日：2017-10-31

申请号：US15209618

申请日：2016-07-13

Applicant: AGENCY FOR SCIENCE, TECHNOLOGY AND RESEARCH

Inventor： Shuang-Yuan Zhang ,  Si Yin Tee ,  Ming-Yong Han ,  Kwok Wei Shah ,  Chin Sheng Chua ,  Dongzhi Chi ,  Andy Hor

IPC: B01J27/14 ,  B01J27/185 ,  C01B25/08 ,  C25B1/04 ,  C25B11/04

CPC classification number: C01B25/08 ,  C25B1/04 ,  C25B11/04 ,  Y02E60/366

Abstract: There is provided a method of preparing transition metal phosphide comprising the step of mixing a solution of a transition metal precursor and a phosphorous precursor under conditions to form the transition metal phosphide. There is also provided a transition metal phosphide particle made according to the method as defined herein. There is additionally provided a method of preparing a transition metal phosphide-based electrode used for producing hydrogen in the electrolysis of water.

公开(公告)号：US11257663B2

公开(公告)日：2022-02-22

申请号：US16645512

申请日：2018-09-11

Applicant: AGENCY FOR SCIENCE, TECHNOLOGY AND RESEARCH

Inventor： Jianwei Chai ,  Shijie Wang ,  Dongzhi Chi ,  Ming Yang

IPC: H01J37/34 ,  C23C14/34 ,  C23C14/35 ,  H01J37/32

Abstract: A sputtering system and a sputtering method are provided. The sputtering system includes a first electrode, a magnet and a second electrode. The first electrode is an elongated tube having a first end and a second end downstream of the first end. The first end is configured to receive a gas flow and the second end is placed next to a substrate. The magnet surrounds at least a portion of the elongated tube and is configured to generate a magnetic field in a space within the elongated tube. The second electrode is disposed within the elongated tube. A voltage is configured to be applied between the first and second electrodes to generate an electric field between the first and second electrodes.

公开(公告)号：US20200279723A1

公开(公告)日：2020-09-03

申请号：US16645512

申请日：2018-09-11

Applicant: AGENCY FOR SCIENCE, TECHNOLOGY AND RESEARCH

Inventor： Jianwei Chai ,  Shijie Wang ,  Dongzhi Chi ,  Ming Yang

IPC: H01J37/34 ,  H01J37/32 ,  C23C14/34 ,  C23C14/35

Abstract: A sputtering system and a sputtering method are provided. The sputtering system includes a first electrode, a magnet and a second electrode. The first electrode is an elongated tube having a first end and a second end downstream of the first end. The first end is configured to receive a gas flow and the second end is placed next to a substrate. The magnet surrounds at least a portion of the elongated tube and is configured to generate a magnetic field in a space within the elongated tube. The second electrode is disposed within the elongated tube. A voltage is configured to be applied between the first and second electrodes to generate an electric field between the first and second electrodes.

公开(公告)号：US12006569B2

公开(公告)日：2024-06-11

申请号：US17437013

申请日：2020-03-11

Applicant: Agency for Science, Technology and Research

Inventor： Swee Liang Wong ,  Yee Fun Lim ,  Dongzhi Chi

IPC: C23C16/455 ,  C23C16/30 ,  C23C16/44 ,  C23C16/448

CPC classification number: C23C16/305 ,  C23C16/4401 ,  C23C16/4481 ,  C23C16/455

Abstract: A method of forming a transition metal dichalcogenide layer on a substrate is provided. The method may include providing a transition metal oxide, a chalcogen source, a non-gaseous chalcogen scavenger, and a substrate, wherein the substrate is disposed downstream of the transition metal oxide and the chalcogen source, and wherein the non-gaseous chalcogen scavenger is disposed in proximity to the transition metal oxide; generating vapors of the transition metal oxide and vapors of the chalcogen source, wherein the non-gaseous chalcogen scavenger reacts preferentially with the vapors of the chalcogen source; disposing the vapors generated from the transition metal oxide and the chalcogen source on the substrate; and reacting the vapors of the transition metal oxide and the chalcogen source on the substrate to obtain the transition metal dichalcogenide layer on the substrate. In one embodiment, the transition metal oxide is molybdenum trioxide (MoO3), the chalcogen source is sulfur, the non-gaseous chalcogen scavenger is nickel and the transition metal dichalcogenide is molybdenum disulfide (MoS2). An arrangement for forming a transition metal dichalcogenide layer on a substrate is also provided.

公开(公告)号：US20220178018A1

公开(公告)日：2022-06-09

申请号：US17437013

申请日：2020-03-11

Applicant: Agency for Science, Technology and Research

Inventor： Swee Liang Wong ,  Yee Fun Lim ,  Dongzhi Chi

IPC: C23C16/30 ,  C23C16/448 ,  C23C16/44 ,  C23C16/455

Abstract: A method of forming a transition metal dichalcogenide layer on a substrate is provided. The method may include providing a transition metal oxide, a chalcogen source, a non-gaseous chalcogen scavenger, and a substrate, wherein the substrate is disposed downstream of the transition metal oxide and the chalcogen source, and wherein the non-gaseous chalcogen scavenger is disposed in proximity to the transition metal oxide; generating vapors of the transition metal oxide and vapors of the chalcogen source, wherein the non-gaseous chalcogen scavenger reacts preferentially with the vapors of the chalcogen source; disposing the vapors generated from the transition metal oxide and the chalcogen source on the substrate; and reacting the vapors of the transition metal oxide and the chalcogen source on the substrate to obtain the transition metal dichalcogenide layer on the substrate. In one embodiment, the transition metal oxide is molybdenum trioxide (MoO3), the chalcogen source is sulfur, the non-gaseous chalcogen scavenger is nickel and the transition metal dichalcogenide is molybdenum disulfide (MoS2). An arrangement for forming a transition metal dichalcogenide layer on a substrate is also provided.

公开(公告)号：US20240301550A1

公开(公告)日：2024-09-12

申请号：US18657569

申请日：2024-05-07

Applicant: Agency for Science, Technology and Research

Inventor： Swee Liang Wong ,  Yee Fun Lim ,  Dongzhi Chi

IPC: C23C16/30 ,  C23C16/44 ,  C23C16/448 ,  C23C16/455

CPC classification number: C23C16/305 ,  C23C16/4401 ,  C23C16/4481 ,  C23C16/455

Abstract: A method of forming a transition metal dichalcogenide layer on a substrate is provided. The method may include providing a transition metal oxide, a chalcogen source, a non-gaseous chalcogen scavenger, and a substrate, wherein the substrate is disposed downstream of the transition metal oxide and the chalcogen source, and wherein the non-gaseous chalcogen scavenger is disposed in proximity to the transition metal oxide; generating vapors of the transition metal oxide and vapors of the chalcogen source, wherein the non-gaseous chalcogen scavenger reacts preferentially with the vapors of the chalcogen source; disposing the vapors generated from the transition metal oxide and the chalcogen source on the substrate; and reacting the vapors of the transition metal oxide and the chalcogen source on the substrate to obtain the transition metal dichalcogenide layer on the substrate. An arrangement for forming a transition metal dichalcogenide layer on a substrate is also provided.

公开(公告)号：US20230243030A1

公开(公告)日：2023-08-03

申请号：US18012412

申请日：2021-06-28

Applicant: Agency for Science, Technology and Research

Inventor： Henry Medina Silva ,  Dongzhi Chi ,  Shi Wun Tong ,  Jianwei Chai ,  Shijie Wang

IPC: C23C16/02 ,  C23C14/18 ,  C23C14/08 ,  C23C16/448 ,  C23C16/30 ,  C23C16/455 ,  C23C16/46 ,  C23C14/58 ,  C23C28/00 ,  H01L21/02

CPC classification number: C23C16/0281 ,  C23C14/083 ,  C23C14/185 ,  C23C14/5866 ,  C23C16/46 ,  C23C16/305 ,  C23C16/4482 ,  C23C16/45523 ,  C23C28/322 ,  C23C28/3455 ,  H01L21/0242 ,  H01L21/02568 ,  H01L21/02614

Abstract: A method for forming a transition metal dichalcogenide monolayer, which includes depositing a transition metal, a transition metal oxide, or a mixture thereof, on a substrate, introducing a chalcogen precursor to the transition metal, the transition metal oxide, or the mixture thereof, in the presence of an etching gas and a carrier gas at a first temperature, to form a transition metal dichalcogenide on the substrate from the transition metal, the transition metal oxide, or the mixture thereof, and subliming the transition metal dichalcogenide on the substrate in the presence of a pulsating supply of a vapor of the chalcogen precursor to form the transition metal dichalcogenide monolayer at a second temperature, wherein the vapor of the chalcogen precursor comprises a chalcogen vapor.