公开(公告)号：US06931937B1

公开(公告)日：2005-08-23

申请号：US11019286

申请日：2004-12-23

申请人： Hiroaki Tanaka ,  Inao Toyoda ,  Yasutoshi Suzuki

发明人： Hiroaki Tanaka ,  Inao Toyoda ,  Yasutoshi Suzuki

IPC分类号： G01L1/16 ,  G01L1/18 ,  G01L9/00 ,  G01L9/04 ,  G01L9/06 ,  G01L9/08 ,  G01L19/04 ,  G01L23/18 ,  G01L23/22

CPC分类号： G01L1/18 ,  G01L9/0042 ,  G01L9/0058 ,  G01L23/18 ,  G01L23/22

摘要： A pressure sensor includes: a casing; a sensor chip with a gauge resistor; a boss disposed on the gauge resistor; a metallic diaphragm capable of distorting in accordance with a pressure; and a load transmission member disposed between the metallic diaphragm and the boss. The casing accommodates the sensor chip, the boss and the load transmission member. The casing is covered with the metallic diaphragm. The pressure applied to the diaphragm is detected such that the load corresponding to the pressure is applied to the gauge resistor through the metallic diaphragm, the load transmission member and the boss so that the pressure is measured on the basis of a resistance change of the gauge resistor. The gauge resistor is larger than the boss.

摘要翻译： 压力传感器包括：壳体; 具有量规电阻器的传感器芯片; 设在量规电阻上的一个老板; 能够根据压力变形的金属隔膜; 以及设置在所述金属膜和所述凸台之间的载荷传递部件。 壳体容纳传感器芯片，凸台和负载传递构件。 外壳被金属隔膜覆盖。 检测施加到隔膜的压力，使得通过金属隔膜，负载传递构件和凸台将对应于压力的负载施加到量规电阻器，使得基于量规的电阻变化来测量压力 电阻。 量规电阻大于凸台。

公开(公告)号：US06578426B2

公开(公告)日：2003-06-17

申请号：US09987349

申请日：2001-11-14

申请人： Masahito Imai ,  Takeshi Shinoda ,  Yasutoshi Suzuki ,  Hiroaki Tanaka

发明人： Masahito Imai ,  Takeshi Shinoda ,  Yasutoshi Suzuki ,  Hiroaki Tanaka

IPC分类号： G01L904

CPC分类号： G01L19/0084 ,  G01L9/0042 ,  G01L9/04 ,  G01L19/147

摘要： A semiconductor sensor chip mounted on a thin diaphragm of a cylindrical metallic stem via an insulation layer is hermetically contained in a housing of a pressure sensor. The sensor chip includes a strain gage for outputting an electrical signal according to distortion of the diaphragm caused by pressure to be measured. A shield layer is interposed between the insulation layer and the sensor chip, and the shield layer is grounded. Influence of outside noises on the sensor outputs is eliminated or suppressed by the grounded shield layer even if the outside noises are in a high frequency region.

公开(公告)号：US06184561B2

公开(公告)日：2001-02-06

申请号：US09322033

申请日：1999-05-28

申请人： Hiroaki Tanaka ,  Inao Toyoda ,  Yasutoshi Suzuki

发明人： Hiroaki Tanaka ,  Inao Toyoda ,  Yasutoshi Suzuki

IPC分类号： H01L2982

CPC分类号： G01L9/0042 ,  G01L9/0054 ,  G01L9/065 ,  H01L29/84

摘要： In a semiconductor pressure sensor having a diaphragm portion and strain gauges on the diaphragm portion, Al stress balance films are provided around the diaphragm portion to balance changes in stress of the strain gauges, which are produced by a change in temperature. As a result, sensor output is prevented from varying due to the change in temperature.

摘要翻译： 在隔膜部分具有隔膜部分和应变计的半导体压力传感器中，在隔膜部分周围设置有Al应力平衡膜，以平衡由温度变化产生的应变仪的应力变化。 结果，由于温度的变化，防止传感器输出变化。

公开(公告)号：US06595065B2

公开(公告)日：2003-07-22

申请号：US09492605

申请日：2000-01-27

申请人： Yukihiko Tanizawa ,  Kazuaki Hamamoto ,  Inao Toyoda ,  Hiroaki Tanaka ,  Yasutoshi Suzuki

发明人： Yukihiko Tanizawa ,  Kazuaki Hamamoto ,  Inao Toyoda ,  Hiroaki Tanaka ,  Yasutoshi Suzuki

IPC分类号： G01L904

CPC分类号： G01L9/0055

摘要： A pressure detecting apparatus has a single-crystal semiconductor sensor chip disposed on a metallic diaphragm through a low melting point glass. The sensor chip has a planar shape selected from a circular shape, a first polygonal shape having more than five sides and having interior angles all less than 180°, and a second polygonal shape having a ratio of a circumscribed circle diameter relative to an inscribed circle diameter being less than 1.2. Four strain gauge resistors are disposed on X, Y axes passing through a center point O of the sensor chip in parallel with directions. Accordingly, thermal stress is reduced not to adversely affect a detection error and simultaneously high sensitivity is provided.

摘要翻译： 压力检测装置具有通过低熔点玻璃设置在金属隔膜上的单晶半导体传感器芯片。 传感器芯片具有选自圆形，多于五边的第一多边形和内角全部小于180°的平面形状，以及具有相对于内切圆的外接圆直径的比率的第二多边形 直径小于1.2。 四个应变计电阻器设置在X，Y轴上，与<110>方向平行地穿过传感器芯片的中心点O。 因此，热应力降低，不会不利地影响检测误差，同时提供高灵敏度。

公开(公告)号：US5986316A

公开(公告)日：1999-11-16

申请号：US979705

申请日：1997-11-26

申请人： Inao Toyoda ,  Yasutoshi Suzuki ,  Nobukazu Oba ,  Hiroaki Tanaka

发明人： Inao Toyoda ,  Yasutoshi Suzuki ,  Nobukazu Oba ,  Hiroaki Tanaka

IPC分类号： G01L9/00 ,  H01L29/06 ,  G01L9/06 ,  H01L41/00

CPC分类号： G01L19/141 ,  G01L19/0084 ,  G01L19/146 ,  G01L19/147

摘要： A diffusion gauge is formed in a surface of a silicon substrate which has a plane orientation of (110). The diffusion gauge is disposed so that a main current thereof flows along a direction perpendicular to a direction in which large stress biased in one direction generates in the surface of the silicon substrate due to distortion of a base for fixing the silicon substrate. Therefore, even when the large biased stress generates in the surface of the silicon substrate, because the direction in which the main current of the diffusion gauge flows is perpendicular to the direction in which the biased stress generates, there is a little change in a resistance value of the diffusion gauge. As a result, a detection error caused by the distortion of the base can be reduced.

摘要翻译： 在硅衬底的具有平面取向为（110）的表面中形成扩散计。 扩散计量器被设置为使得其主电流沿着与硅衬底的表面中由于基底的变形而在一个方向上产生大的应力的方向垂直的<110>方向流动。 因此，即使在硅衬底的表面产生大的偏压应力的情况下，由于扩散计的主电流流动的<110>方向与偏压应力的方向垂直，所以有一点变化 在扩散计的电阻值中。 结果，可以减少由基座的失真引起的检测误差。

公开(公告)号：US20050166682A1

公开(公告)日：2005-08-04

申请号：US11019286

申请日：2004-12-23

申请人： Hiroaki Tanaka ,  Inao Toyoda ,  Yasutoshi Suzuki

发明人： Hiroaki Tanaka ,  Inao Toyoda ,  Yasutoshi Suzuki

IPC分类号： G01L1/16 ,  G01L1/18 ,  G01L9/00 ,  G01L9/04 ,  G01L9/06 ,  G01L9/08 ,  G01L19/04 ,  G01L23/18 ,  G01L23/22

CPC分类号： G01L1/18 ,  G01L9/0042 ,  G01L9/0058 ,  G01L23/18 ,  G01L23/22

摘要： A pressure sensor includes: a casing; a sensor chip with a gauge resistor; a boss disposed on the gauge resistor; a metallic diaphragm capable of distorting in accordance with a pressure; and a load transmission member disposed between the metallic diaphragm and the boss. The casing accommodates the sensor chip, the boss and the load transmission member. The casing is covered with the metallic diaphragm. The pressure applied to the diaphragm is detected such that the load corresponding to the pressure is applied to the gauge resistor through the metallic diaphragm, the load transmission member and the boss so that the pressure is measured on the basis of a resistance change of the gauge resistor. The gauge resistor is larger than the boss.

摘要翻译： 压力传感器包括：壳体; 具有量规电阻器的传感器芯片; 设在量规电阻上的一个老板; 能够根据压力变形的金属隔膜; 以及设置在所述金属膜和所述凸台之间的载荷传递部件。 壳体容纳传感器芯片，凸台和负载传递构件。 外壳被金属隔膜覆盖。 检测施加到隔膜的压力，使得通过金属隔膜，负载传递构件和凸台将对应于压力的负载施加到量规电阻器，使得基于量规的电阻变化来测量压力 电阻。 量规电阻大于凸台。

公开(公告)号：US06595067B2

公开(公告)日：2003-07-22

申请号：US10091476

申请日：2002-03-07

申请人： Yasutoshi Suzuki ,  Hiroaki Tanaka

发明人： Yasutoshi Suzuki ,  Hiroaki Tanaka

IPC分类号： G01L916

CPC分类号： G01L19/147 ,  G01L9/0042 ,  G01L9/0055

摘要： In a pressure sensor made by bonding a sensor chip and a metal stem together with a resin adhesive, fluctuation of the sensor output caused by temperature changes are maximally reduced. The resin adhesive for bonding together the sensor element and the metal stem has a creep characteristic defined as CR=A×&sgr;B between its creep rate CR and stress &sgr; upon it with A and B being constants. The resin adhesive is selected to satisfy that the constant B is not greater than 3.5.

公开(公告)号：US06422088B1

公开(公告)日：2002-07-23

申请号：US09666085

申请日：2000-09-21

申请人： Nobukazu Oba ,  Yoshifumi Murakami ,  Yukihiko Tanizawa ,  Hiroaki Tanaka ,  Seiichiro Ishio ,  Inao Toyoda ,  Yasutoshi Suzuki

发明人： Nobukazu Oba ,  Yoshifumi Murakami ,  Yukihiko Tanizawa ,  Hiroaki Tanaka ,  Seiichiro Ishio ,  Inao Toyoda ,  Yasutoshi Suzuki

IPC分类号： G01L900

CPC分类号： G01L27/007 ,  G01D3/08 ,  G01L9/0054 ,  G01L9/02 ,  G01R17/10

摘要： A reference voltage generating circuit is constituted by resistors RE and RF each having a resistance not influenced by an application of pressure. The reference voltage generating circuit is connected between one and the other ends of a bridge circuit. A failure judgement of the bridge circuit is performed based on a comparison of a voltage difference VBC between two midpoints B and C of the bridge circuit and voltage differences VCE and VBE between a reference voltage level of the reference voltage generating circuit and the voltage levels of two midpoints B and C.

摘要翻译： 参考电压发生电路由电阻器RE和RF构成，每个电阻器不受施加压力的影响。 参考电压产生电路连接在桥接电路的一端和另一端之间。 基于桥电路的两个中点B和C之间的电压差VBC与参考电压产生电路的参考电压电平之间的电压差VCE和VBE的比较，执行桥电路的故障判断， 两个中点B和C.

公开(公告)号：US07197939B2

公开(公告)日：2007-04-03

申请号：US11046792

申请日：2005-02-01

申请人： Minekazu Sakai ,  Yasutoshi Suzuki

发明人： Minekazu Sakai ,  Yasutoshi Suzuki

IPC分类号： G01L21/12 ,  G01L9/00

CPC分类号： G01L9/0054 ,  G01L19/0627 ,  G01L19/0636

摘要： A pressure sensor includes a semiconductor substrate and a pedestal member such as a glass pedestal. The semiconductor substrate has a diaphragm for detecting a pressure and a thick portion positioned around the diaphragm. The pedestal member has one surface bonded to the thick portion of the semiconductor substrate and the other surface opposite to the one surface. In the pressure sensor, the pedestal member has a through hole through which pressure is introduced to the diaphragm. The through hole penetrates through the pedestal member from an opening of the other surface to the one surface of the pedestal member, and the through hole has a hole diameter that becomes smaller from the one surface toward the other surface of the pedestal member. Accordingly, it can effectively restrict foreign materials such as dusts from being introduced into the through hole of the pressure sensor.

摘要翻译： 压力传感器包括半导体基板和诸如玻璃基座的基座构件。 半导体衬底具有用于检测压力的膜片和位于膜片周围的厚壁部分。 基座构件具有一个表面，其结合到半导体衬底的厚部分，另一个表面与该表面相对。 在压力传感器中，基座构件具有通向该隔膜的压力的通孔。 通孔从另一个表面的开口穿过基座构件到基座构件的一个表面，并且通孔具有从基座构件的一个表面朝向另一个表面变小的孔直径。 因此，能够有效地将诸如灰尘的异物引入压力传感器的通孔中。

公开(公告)号：US06995466B2

公开(公告)日：2006-02-07

申请号：US10732377

申请日：2003-12-11

申请人： Shinji Yoshihara ,  Yasutoshi Suzuki

发明人： Shinji Yoshihara ,  Yasutoshi Suzuki

IPC分类号： H01L23/12

CPC分类号： H01L21/6835 ,  B23K26/146 ,  B23K26/40 ,  B23K2103/50 ,  H01L21/78 ,  H01L2924/30105

摘要： A semiconductor device includes a semiconductor wafer having a weak portion and a removable passivation cap disposed on the wafer for covering the weak portion. The passivation cap has an absorption coefficient of a laser beam, which is smaller than that of the wafer. The cap has a capability of passing water therethrough. In a case where the device is diced and cut into a plurality of chips, the passivation cap can be removed easily without bonding the cap again. That is because the passivation cap remains one body after dicing.

摘要翻译： 半导体器件包括具有弱部分的半导体晶片和设置在晶片上以覆盖弱部分的可移除钝化帽。 钝化帽具有比晶片小的激光束的吸收系数。 盖子具有通过水的能力。 在将设备切割并切割成多个芯片的情况下，可以容易地移除钝化盖而不再次接合盖。 这是因为钝化帽在切割后保持一体。