GOA CIRCUIT, DISPLAY PANEL AND DISPLAY DEVICE

    公开(公告)号:US20220189429A1

    公开(公告)日:2022-06-16

    申请号:US17261014

    申请日:2020-06-30

    Inventor: Chao TIAN

    Abstract: A gate driver on array (GOA) circuit, a display panel and a display device are provided. The GOA circuit includes m cascaded GOA units. An nth-stage GOA unit includes a second feedback module. The second feedback module, electrically connected to the second node of the nth-stage GOA unit, a first node of the (n−1)th-stage GOA unit, the clock signal of the (n+1)th-stage GOA unit, a gate driving signal of the nth-stage GOA unit and the constant low voltage signal, to pull down voltage applied on a second node of the nth-stage GOA unit. The one-way feedback could achieve the linear design more easily, raise the circuit stability, and thus the GOA circuit could be integrated in the display panel more easily to achieve the design of placing the GOA circuit in the active area.

    DISPLAY PANEL, GATE ELECTRODE DRIVING CIRCUIT, AND ELECTRONIC DEVICE

    公开(公告)号:US20210408072A1

    公开(公告)日:2021-12-30

    申请号:US16769254

    申请日:2020-02-28

    Abstract: A display panel, a gate electrode driving circuit, and an electronic device are provided. The display panel includes a first metal layer including a first gate electrode; a second metal layer including a first source electrode, a first drain electrode, and a second gate electrode; two ends of a polycrystalline silicon semiconductor layer electrically connected to the first source electrode and the first drain electrode respectively; a third metal layer including a second source electrode and a second drain electrode; and two ends of a metal oxide semiconductor layer electrically connected to the second source electrode and the second drain electrode respectively.

    LTPS TYPE TFT AND METHOD FOR MANUFACTURING SAME

    公开(公告)号:US20190333944A1

    公开(公告)日:2019-10-31

    申请号:US16086019

    申请日:2018-08-07

    Abstract: The present disclosure provides an LTPS type TFT and a method for manufacturing the same. The TFT includes a first contact hole and a second contact hole, where the first contact hole and the second contact hole pass through the third insulating layer, the second insulating layer, and a portion of the first insulating layer, such that a portion of the heavily doped area is exposed. In addition, a transparent electrode is electrically connected to the source/drain electrode or the second gate electrode and a portion of the heavily doped area.

    DISPLAY PANEL
    7.
    发明申请

    公开(公告)号:US20250087124A1

    公开(公告)日:2025-03-13

    申请号:US18249250

    申请日:2023-02-28

    Abstract: The present application discloses a display panel, the display panel includes an active area and a irregular-shaped area, the active area includes a first active area disposed at at least one side of the irregular-shaped area and a second active area connected with the first active area. The first signal line is disposed in the second active area, the second signal line is disposed in the first active area, the first signal line and the second signal line extend in a same direction, and the length of the first signal line is larger than the length of the second signal line, and at least one of a plurality of the compensation units is connected with the second signal line.

    THIN FILM TRANSISTOR AND DISPLAY PANEL
    9.
    发明公开

    公开(公告)号:US20240055535A1

    公开(公告)日:2024-02-15

    申请号:US17598275

    申请日:2021-08-06

    CPC classification number: H01L29/78696 H01L29/42384 G02F1/1368

    Abstract: A thin film transistor and a display panel are provided. A first dimension of a first transmission portion electrically connected to a source heavily-doped portion is different from a second dimension of a second transmission portion electrically connected to a drain heavily-doped portion, so that an intensity of an electric field of carriers transmitted by the transmission portion corresponding to the larger one of the first dimension or the second dimension is smaller when the thin film transistor is turned on, thereby reducing the bombardment effect of the carriers on a source or a drain and improving the stability of thin film transistor.

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