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公开(公告)号：US10439592B2
公开(公告)日：2019-10-08
申请号：US16048034
申请日：2018-07-27
Applicant: TDK CORPORATION
Inventor： Naomichi Degawa , Takekazu Yamane
Abstract: A magnetoresistance effect device includes a magnetoresistance effect element including a magnetization fixed layer, a magnetization free layer of which a direction of magnetization is changeable relative to a direction of magnetization of the fixed layer, and a spacer layer sandwiched between the fixed and free layers, a first signal line configured to generate a high frequency magnetic field when a high frequency current flows and apply the field to the magnetization free layer, and a DC application terminal configured to be capable of connecting a power supply for applying a DC current or voltage in a stacking direction of the element, and the element is disposed with respect to the terminal so the DC current flows from the fixed layer to the free layer in the element or so the DC voltage at which the magnetization fixed layer is higher in potential than the magnetization free layer is applied.
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公开(公告)号：US10756257B2
公开(公告)日：2020-08-25
申请号：US16364865
申请日：2019-03-26
Applicant: TDK CORPORATION
Inventor： Naomichi Degawa
Abstract: Provided is a magnetoresistance effect device comprising a magnetoresistance effect element including a first ferromagnetic layer, a second ferromagnetic layer and a spacer layer and a high-frequency signal line. The high-frequency signal line includes an overlapping part disposed at a position overlapping the magnetoresistance effect element and a non-overlapping part disposed at a position not overlapping the magnetoresistance effect element in a plan view from a stacking direction. At least a part of the non-overlapping part is formed to be thicker than at least a part of the overlapping part. A distance in the stacking direction between a virtual plane including a surface on the side of the overlapping part of the first ferromagnetic layer and a center line in the high-frequency signal line in the stacking direction is shorter in at least a part of the overlapping part than in at least a part of the non-overlapping part.
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公开(公告)号：US10885934B2
公开(公告)日：2021-01-05
申请号：US16364534
申请日：2019-03-26
Applicant: TDK CORPORATION
Inventor： Naomichi Degawa , Tsuyoshi Suzuki
IPC: G11B5/39 , G01R33/09 , H01L43/08 , H01L43/10 , H03H9/22 , H01F10/32 , H01L43/02 , G11B5/31 , B82Y25/00
Abstract: Provided is a magnetoresistance effect device comprising a magnetoresistance effect element including a first ferromagnetic layer, a second ferromagnetic layer and a spacer layer, and a high-frequency signal line. The high-frequency signal line includes an overlapping part disposed at a position overlapping the magnetoresistance effect element and a non-overlapping part disposed at a position not overlapping the magnetoresistance effect element in a plan view from a stacking direction. At least a part of the non-overlapping part is disposed below the overlapping part in the stacking direction, assuming that the overlapping part is above the magnetoresistance effect element in the stacking direction.
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公开(公告)号：US09129622B2
公开(公告)日：2015-09-08
申请号：US13842948
申请日：2013-03-15
Applicant: TDK Corporation
Inventor： Takahiko Machita , Naomichi Degawa , Takekazu Yamane , Takumi Yanagisawa , Satoshi Miura , Kenta Hamamoto , Minoru Ota , Kenzo Makino , Shohei Kawasaki
CPC classification number: G11B5/3912 , G01R33/093 , G01R33/098 , G11B5/3906 , G11B5/3932 , G11B5/398 , H01L43/08
Abstract: A magnetoresistive effect element that prevents a recording medium from deteriorating by effectively inhibiting erroneous writing to a medium or the like includes a magnetoresistive effect part, and an upper shield layer and a lower shield layer that are laminated and formed in a manner sandwiching the magnetoresistive effect part from above and below, and is in a current perpendicular to plane (CPP) structure in which a sense current is applied in a lamination direction. The magnetoresistive effect part includes a nonmagnetic intermediate layer, and a first ferromagnetic layer and a second ferromagnetic layer that sandwich the nonmagnetic intermediate layer from above and below, the upper shield layer and the lower shield layer have inclined magnetization structures in which magnetizations of them are respectively inclined with respect to a track width direction, the magnetizations of the upper shield layer and the lower shield layer are mutually substantially orthogonal, the first ferromagnetic layer is indirectly magnetically coupled with the upper shield layer via a first exchange coupling function gap layer that is positioned between the first ferromagnetic layer and the upper shield layer, and the second ferromagnetic layer is indirectly magnetically coupled with the lower shield layer via a second exchange coupling function gap layer that is positioned between the second ferromagnetic layer and the lower shield layer.
Abstract translation: 通过有效地抑制对介质等的错误写入来防止记录介质劣化的磁阻效应元件包括以夹着磁阻效应的方式层叠形成的磁阻效应部分，上屏蔽层和下屏蔽层 部分来自上方和下方，并且处于与层叠方向施加感测电流的垂直于平面（CPP）结构的电流。 磁阻效应部分包括非磁性中间层，并且从上下屏蔽层和下屏蔽层上下夹着非磁性中间层的第一铁磁层和第二铁磁层具有倾斜的磁化结构，其中它们的磁化为 分别相对于轨道宽度方向倾斜，上屏蔽层和下屏蔽层的磁化相互大致正交，第一铁磁层经由第一交换耦合功能间隙层与上屏蔽层间接地磁耦合， 位于所述第一铁磁层和所述上屏蔽层之间，并且所述第二铁磁层经由位于所述第二铁磁层和所述下屏蔽层之间的第二交换耦合功能间隙层与所述下屏蔽层间接地磁耦合。
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公开(公告)号：US11703381B2
公开(公告)日：2023-07-18
申请号：US17584859
申请日：2022-01-26
Applicant: TDK CORPORATION
Inventor： Naomichi Degawa
CPC classification number: G01J1/42 , G01J1/0488
Abstract: Provided are a light detection element, a receiving device, and a light sensor device. The light detection element includes a magnetic element that includes a first ferromagnetic layer, a second ferromagnetic layer, and a spacer layer interposed between the first ferromagnetic layer and the second ferromagnetic layer, wherein the first ferromagnetic layer is irradiated with light in a direction intersecting a stacking direction of the magnetic element.
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Patent Agency Ranking
公开(公告)号：US11165128B1
公开(公告)日：2021-11-02
申请号：US16930775
申请日：2020-07-16
Applicant: TDK CORPORATION
Inventor： Naomichi Degawa , Shinji Hara , Akimasa Kaizu
Abstract: A high-frequency device includes a magnetoresistance effect element which includes a first ferromagnetic layer, a second ferromagnetic layer, and a spacer layer positioned between the first and second ferromagnetic layers, a soft magnetic material body which covers at least a part of a periphery of the magnetoresistance effect element from outside in a plan view in a lamination direction of the magnetoresistance effect element, a non-magnetic material body which is positioned between the soft magnetic material body and the first ferromagnetic layer in the plan view in the lamination direction, and a high-frequency line which is connected to or spaced apart from the magnetoresistance effect element. The high-frequency line is configured to input or output a high-frequency current to or from the magnetoresistance effect element, or is configured to apply a high-frequency magnetic field caused by a high-frequency current flowing through the inside to the magnetoresistance effect element.
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公开(公告)号：US10109302B1
公开(公告)日：2018-10-23
申请号：US15652684
申请日：2017-07-18
Applicant: TDK Corporation
Inventor： Tetsuhito Shinohara , Tetsuya Roppongi , Naomichi Degawa
Abstract: A magnetic recording head is provided with a main magnetic pole that generates a recording magnetic field to be applied to a magnetic recording medium from an end surface which makes a portion of an air bearing surface, a trailing shield that is placed by interposing a write gap at a trailing side of the main magnetic pole, a spin torque oscillator that is placed within the write gap to be between the main magnetic pole and the trailing shield, and two side shields that are placed at both sides of the main magnetic pole in the cross track direction, and when viewed from the air bearing surface side, at least a portion of the trailing-side end surfaces of the side shields are offset toward a leading-side of the main magnetic pole from the leading-side end surface of the spin torque oscillator.
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公开(公告)号：US09747933B1
公开(公告)日：2017-08-29
申请号：US15044559
申请日：2016-02-16
Applicant: TDK Corporation
Inventor： Hisayoshi Watanabe , Naomichi Degawa , Satoshi Miura , Masachika Hashino , Tetsuya Hiraki , Hidekazu Kojima
IPC: G11B5/39
CPC classification number: G11B5/3912 , G11B2005/3996
Abstract: A magneto-resistive effect element (MR element) has an upper shield that is magnetized in a cross track direction, a lower shield that is positioned at an interval relative to the upper shield in a down track direction, and a multilayer film that is positioned between the upper shield and the lower shield and that faces an air bearing surface (ABS). The multilayer film has a free layer where its magnetization direction fluctuates relative to an external magnetic field, a pinned layer where its magnetization direction is pinned against the external magnetic field, a nonmagnetic spacer layer that is positioned between the free layer and the pinned layer, and an insulating layer that is positioned at a back side of the free layer viewed from the ABS. The MR element further has a pair of side shields that are positioned at both sides of the free layer and the insulating layer in a cross track direction. The side shields contact the upper shield on the sides of the free layer and the insulating layer in the cross track direction.
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公开(公告)号：US10680165B2
公开(公告)日：2020-06-09
申请号：US16208191
申请日：2018-12-03
Applicant: TDK CORPORATION
Inventor： Naomichi Degawa
IPC: H01L43/08 , H01P1/203 , H01F10/32 , H01L43/02 , G11C11/18 , G11C11/19 , G11C11/16 , H01L43/10 , H01P1/218
Abstract: A magnetoresistance effect device includes: a magnetoresistance effect element formed by performing lamination such that a spacer layer is disposed between a first ferromagnetic layer and a second ferromagnetic layer; a high frequency signal line arranged on one side of the magnetoresistance effect element in a direction parallel to a lamination direction; and a magnetic member arranged at a position further away from the one side than the high frequency signal line when viewed from the magnetoresistance effect element, wherein the magnetic member has a concave portion which is recessed in a direction away from the high frequency signal line in a surface facing the high frequency signal line.
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公开(公告)号：US10559412B2
公开(公告)日：2020-02-11
申请号：US16204502
申请日：2018-11-29
Applicant: TDK CORPORATION
Inventor： Akimasa Kaizu , Naomichi Degawa , Tetsuya Roppongi
IPC: H01F10/32 , H01L43/02 , H03H11/04 , H03B15/00 , H03H11/16 , H03F15/00 , H01L27/22 , H03H2/00 , G01R33/09 , H01L43/10
Abstract: At least one magnetoresistance effect element and a magnetic field applying unit to apply a magnetic field to the magnetoresistance effect element, the magnetic field applying unit includes a first ferromagnetic material having a portion protruding to the magnetoresistance effect element side in a stacking direction of the magnetoresistance effect element, a second ferromagnetic material sandwiching the magnetoresistance effect element with the first ferromagnetic material, and a coil wound around the first ferromagnetic material, a first magnetization free layer of the magnetoresistance effect element has a portion free of overlapping with at least one of a second surface of the protruding portion on the magnetoresistance effect element side and a third surface of the second ferromagnetic material on the magnetoresistance effect when viewed in the stacking direction, and a center of gravity of the first magnetization free layer, positioned in a region connecting the second surface and the third surface.
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